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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 40V6472 6 .4 — 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 4 0 V 6 4 7 2 is an internally impedance-matched GaAs power F E T especially designed fo r use in 6 . 4 - 7 . 2 GH z band amplifiers. The herm etically sealed metal-ceramic	OCR Scan	PDF	40V6472 27C102P, RV-15 T-46-13-25

Catalog Datasheet

MFG & Type

PDF

Document Tags

Untitled

Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 40V6472 6 .4 — 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 4 0 V 6 4 7 2 is an internally impedance-matched GaAs power F E T especially designed fo r use in 6 . 4 - 7 . 2 GH z band amplifiers. The herm etically sealed metal-ceramic

OCR Scan

PDF

40V6472 27C102P, RV-15 T-46-13-25