40V 12A N-CHANNEL MOS Search Results

252-4L

Contextual Info: Spec. No. : C449J4 Issued Date : 2009.03.11 Revised Date : Page No. : 1/11 CYStech Electronics Corp. N & P-Channel Enhancement Mode Power MOSFET MTC3504BJ4 N-CH P-CH BVDSS 40V -40V ID 12A -9A RDSON MAX 35mΩ 44mΩ Features • Low Gate Charge • Simple Drive Requirement

B35N04

Abstract: DM-48 MTB35N04J3 MTB35N04 DM-48, 4 pins DT100 B35n
Contextual Info: CYStech Electronics Corp. Spec. No. : C453J3 Issued Date : 2009.03.11 Revised Date : Page No. : 1/7 N -Channel Enhancement Mode Power MOSFET MTB35N04J3 BVDSS 40V ID 12A RDSON MAX 35mΩ Features • Low Gate Charge • Simple Drive Requirement • RoHS compliant & Halogen-free package

Contextual Info: Single N-channel MOSFET ELM32412LA-S •General description ■Features ELM32412LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=40V Id=12A Rds(on) < 25mΩ (Vgs=10V) Rds(on) < 45mΩ (Vgs=4.5V)

P2504BDG

Contextual Info: Single N-channel MOSFET ELM32412LA-S •General description ■Features ELM32412LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=40V Id=12A Rds(on) < 25mΩ (Vgs=10V) Rds(on) < 45mΩ (Vgs=4.5V)

9467GM

Abstract: AP9467GM 9467g
Contextual Info: AP9467GM RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance D D ▼ Simple Drive Requirement D D G S S 40V RDS ON 11mΩ ID ▼ Fast Switching Characteristic SO-8 BVDSS 12A S Description D

Contextual Info: AP9467GM RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-resistance BVDSS D D Simple Drive Requirement RDS ON D D G S S 11m ID Fast Switching Characteristic SO-8 40V 12A S Description D Advanced Power MOSFETs from APEC provide the

APM4472

Abstract: A102 APM4472K STD-020C
Contextual Info: APM4472K N-Channel Enhancement Mode MOSFET Features • Pin Description 40V/12A, RDS ON = 7.5mΩ(typ.) @ VGS= 10V • • • • RDS(ON)= 10.5mΩ(typ.) @ VGS= 4.5V Super High Dense Cell Design Avalanche Rated Reliable and Rugged Top View of SOP − 8 Lead Free Available (RoHS Compliant)

A102

Abstract: APM4472 APM4472K APM44
Contextual Info: APM4472K N-Channel Enhancement Mode MOSFET Features • Pin Description 40V/12A, D • • • • D D RDS ON = 7.5mΩ(typ.) @ VGS= 10V RDS(ON)= 10.5mΩ(typ.) @ VGS= 4.5V D S Super High Dense Cell Design S S Avalanche Rated Reliable and Rugged G Top View of SOP − 8

Contextual Info: STN454D N Channel Enhancement Mode MOSFET 10.0A DESCRIPTION STN454D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN454D has been designed specially to improve the overall efficiency of DC/DC converters using

STN454D

Abstract: 100A Mosfet Stanson Technology STN454 n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR uis test APD50 MOSFET 20V 100A MOSFET 20V 120A 5025W
Contextual Info: STN454D N Channel Enhancement Mode MOSFET 10.0A DESCRIPTION STN454D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN454D has been designed specially to improve the overall efficiency of DC/DC converters using

Contextual Info: STN4186D N Channel Enhancement Mode MOSFET 35.0A DESCRIPTION STN4186D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN454D has been designed specially to improve the overall efficiency of DC/DC converters using

AOD609

Abstract: AOD609L aod609 datasheet
Contextual Info: AOD609 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD609/L uses advanced trench technology MOSFETs to provide excellent R DS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

AOD609

Abstract: aod609 datasheet
Contextual Info: AOD609 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD609 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

Contextual Info: AOD609 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD609 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

12A 650V MOSFET

Abstract: 6A 650V MOSFET
Contextual Info: SSFP12N65 StarMOST Power MOSFET • Extremely high dv/dt capability ■ Low Gate Charge Qg results in VDSS = 650V Simple Drive Requirement ID25 = 12A ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability

SSFP12N60

Contextual Info: SSFP12N60 StarMOST Power MOSFET • Extremely high dv/dt capability ■ Low Gate Charge Qg results in VDSS = 600V Simple Drive Requirement ID25 = 12A ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability

Contextual Info: TOSHIBA 2SK2507 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-tt-MOSV 2SK2507 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS • • • •

2SK2507

Contextual Info: TOSHIBA 2SK2507 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2507 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10 ±0.3 r ^3.2 ± 0.2

2SK2507

Contextual Info: TOSHIBA 2SK2507 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2507 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10 ±0.3 r ^3.2 ± 0.2

Contextual Info: TOSHIBA 2SK2507 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-tt-M O SV 2SK2507 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 1 0 ± 0 .3

Contextual Info: E C ELECTRONICS INC 6427525 N E C "ta ELECTRONICS INC ßF|t,4a7sas □oiñ'íbb d | ~ 98D MOS F I E L D 18966 EFFECT Ü -f-'l'J-a TRANSISTOR ELECTHQN DEVICE 2 S K 8 1 1 FAST SWITCHING N - C H A N N E L S I L I C O N P OWE R MOS F E T Features PACKAGE DIMENSIONS

Contextual Info: SSFP20N20 StarMOST Power MOSFET • Extremely high dv/dt capability ■ Low Gate Charge Qg results in VDSS = 200V Simple Drive Requirement ID25 = 20A ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability

Infineon technology roadmap for mosfet

Abstract: LFPAK88 Acbel schematic diagram switching power supply BLDC TRW schematic diagram inverter air conditioner schematic diagram for split air conditioner TRIAC 20A 600V inverter schematic ims 1600 triac 4A, 600V, 5mA triac 0,8A, 600V, 5mA
Contextual Info: NXP PowerMOS, BIPOLAR and Motor Control Smaller, Faster, Cooler June 05, 2014 Nicolas Rescanieres Field Application Engineer South of France NXP PowerMOS 1 Agenda MosFET in automotive and industrial Bipolar Motor Control Agenda MosFET in automotive and industrial

MDD9754

Abstract: MDD-9754
Contextual Info: Preliminary – Subject to change without notice Dual Enhancement N-P Channel Trench MOSFET General Description Features The MDD9754 uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance, high switching performance and exellent reliability