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    40N60C2 Search Results

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    40N60C2 Price and Stock

    IXYS Corporation IXGH40N60C2

    IGBT PT 600V 75A TO-247AD
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    Chip 1 Exchange IXGH40N60C2 1,621
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    New Advantage Corporation IXGH40N60C2 1,047 1
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    IXYS Corporation IXGR40N60C2

    IGBT PT 600V 56A ISOPLUS247
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    IXYS Corporation IXGT40N60C2

    IGBT PT 600V 75A TO-268AA
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    IXYS Corporation IXGJ40N60C2D1

    IGBT PT 600V 75A TO-268
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    IXYS Corporation IXGR40N60C2D1

    IGBT PT 600V 56A ISOPLUS247
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    ComSIT USA IXGR40N60C2D1 2
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    40N60C2 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IXGR40N60C2D1

    Abstract: 40n60c2 ixgr 40n60c2d1 40n60c2d1 40n60c ixgr40n60c2 40n60 074K
    Text: HiPerFASTTM IGBT ISOPLUS247TM IXGR 40N60C2 IXGR 40N60C2D1 = = VCE SAT = tfi(typ = VCES IC25 C2-Class High Speed IGBTs (Electrically Isolated Back Surface) Preliminary Data Sheet IXGR_C2 IXGR_C2D1 ISOPLUS 247TM (IXGR) Symbol Test Conditions VCES TJ = 25°C to 150°C


    Original     		ISOPLUS247TM 40N60C2 40N60C2D1 247TM IC110 ID110 40N60C2D1) IXGR40N60C2D1 40n60c2 ixgr 40n60c2d1 40n60c2d1 40n60c ixgr40n60c2 40n60 074K PDF

    40n60c2

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT C2-Class High Speed IGBTs VCES IC25 VCE sat tfi typ IXGH 40N60C2 IXGT 40N60C2 = 600 V = 75 A = 2.7 V = 32 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V


    Original     		40N60C2 O-268 IC110 O-247 40n60c2 PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT C2-Class High Speed IGBTs IXGH 40N60C2 IXGT 40N60C2 VCES IC25 VCE sat tfi typ = 600 V = 75 A = 2.7 V = 32 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V


    Original     		40N60C2 O-268 IC110 O-247 PDF

    40n60c2d1

    Abstract: *40n60c2d1 IXGH40N60C2D1 transistor kf 508 40N60 diode fr 307 40N60C2D
    Text: Advance Technical Data HiPerFASTTM IGBT with Diode VCES IC25 IXGH 40N60C2D1 IXGT 40N60C2D1 IXGJ 40N60C2D1 = 600 V = 75 A = 2.5 V = 32 ns VCE SAT tfi(typ) C2-Class High Speed IGBTs TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		40N60C2D1 O-247 IC110 40n60c2d1 *40n60c2d1 IXGH40N60C2D1 transistor kf 508 40N60 diode fr 307 40N60C2D PDF

    IXGR40N60C2D1

    Abstract: 40N60C2 40N60c2d1 ixgr 40N60c2d1
    Text: Advance Technical Data IXGR 40N60C2 IXGR 40N60C2D1 HiPerFASTTM IGBT ISOPLUS247TM VCES IC25 = 600 V = 60 A = 2.7 V = 32 ns VCE SAT tfi(typ) Lightspeed 2TM Series (Electrically Isolated Back Surface) PLUS 247TM (IXFX) IXGR_C2 IXGR_C2D1 Symbol Test Conditions


    Original     		40N60C2 40N60C2D1 ISOPLUS247TM 247TM 728B1 123B1 728B1 065B1 IXGR40N60C2D1 40N60C2 40N60c2d1 ixgr 40N60c2d1 PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT ISOPLUS247TM IXGR 40N60C2 IXGR 40N60C2D1 C2-Class High Speed IGBTs Electrically Isolated Back Surface Preliminary Data Sheet IXGR_C2 IXGR_C2D1 VCES IC25 = = VCE(SAT) = tfi(typ = ISOPLUS 247TM (IXGR) Symbol Test Conditions VCES TJ = 25°C to 150°C


    Original     		ISOPLUS247TM 40N60C2 40N60C2D1 247TM IC110 ID110 40N60C2D1) PDF

    IXGR40N60C2D1

    Abstract: 037 G V 40N60c2d1 DS99052B
    Text: HiPerFASTTM IGBT ISOPLUS247TM IXGR 40N60C2 IXGR 40N60C2D1 VCES IC25 VCE SAT tfi(typ) C2-Class High Speed IGBTs (Electrically Isolated Back Surface) IXGR_C2 IXGR_C2D1 ISOPLUS 247TM (IXGR) Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		ISOPLUS247TM 40N60C2 40N60C2D1 247TM IC110 ID110 40N60C2D1) 728B1 123B1 IXGR40N60C2D1 037 G V 40N60c2d1 DS99052B PDF

    40N60C2D1

    Abstract: KF 520
    Text: HiPerFASTTM IGBT with Diode VCES IC25 = = VCE SAT = tfi(typ = IXGH 40N60C2D1 IXGT 40N60C2D1 IXGJ 40N60C2D1 C2-Class High Speed IGBTs 600 V 56 A 2.7 V 32 ns TO-247(IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		40N60C2D1 O-247 IC110 O-268 O-268 Leade00 40N60C2D1 KF 520 PDF

    IXGR40N60C2D1

    Abstract: IXGH40N60C2 40n60c2d1 ixgr 40N60c2d1 siemens servo motor 40N60C2 IXGH40N60C2D1 40n60
    Text: IXGR 40N60C2 IXGR 40N60C2D1 HiPerFASTTM IGBT ISOPLUS247TM VCES IC25 VCE SAT tfi(typ) C2-Class High Speed IGBTs (Electrically Isolated Back Surface) Preliminary Data Sheet IXGR_C2 IXGR_C2D1 ISOPLUS 247TM (IXGR) Symbol Test Conditions VCES TJ = 25°C to 150°C


    Original     		40N60C2 40N60C2D1 ISOPLUS247TM 247TM IC110 ID110 40N60C2D1) 728B1 123B1 728B1 IXGR40N60C2D1 IXGH40N60C2 40n60c2d1 ixgr 40N60c2d1 siemens servo motor 40N60C2 IXGH40N60C2D1 40n60 PDF

    40n60c2d1

    Abstract: IXGR40N60C2D1
    Text: Advance Technical Data IXGR 40N60C2 IXGR 40N60C2D1 HiPerFASTTM IGBT ISOPLUS247TM VCES IC25 VCE SAT tfi(typ) C2-Class High Speed IGBTs (Electrically Isolated Back Surface) IXGR_C2 IXGR_C2D1 ISOPLUS 247TM (IXGR) Symbol Test Conditions VCES TJ = 25°C to 150°C


    Original     		ISOPLUS247TM 40N60C2 40N60C2D1 247TM 728B1 123B1 065B1 40n60c2d1 IXGR40N60C2D1 PDF

    40n60

    Abstract: 40N60C2
    Text: Advance Technical Data HiPerFASTTM IGBT C2-Class High Speed IGBTs Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C limited by leads


    Original     		40N60C2 IC110 O-268 O-247 728B1 123B1 728B1 065B1 40n60 40N60C2 PDF

    7N60B equivalent

    Abstract: 60N60B2-7Y 7N60C-2X 7N60B-2X 10n60b ixgd 28N12 60N60C2-7Y 20N120 16N60C2
    Text: Chip-Shortform2004.pmd Insulated Gate Bipolar Transistors G-Series Type VCES VCE sat @ IC Chip type Chip size dimensions 6 TJM = 150°C V V A mm mils Source bond wire Equivalent device recommended data sheet 26.10.2004, 12:44 High Gain High Gain High Gain


    Original     		7N60B-2X 7N60C-2X 16N60B2-3X 16N60C2-3X 30N60B2-4X 30N60C2-4X 40N60B2-5Y 40N60C2-5Y 60N60B2-7Y 60N60C2-7Y 7N60B equivalent 10n60b ixgd 28N12 20N120 16N60C2 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF