Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    40L4502 Search Results

    SF Impression Pixel

    40L4502 Price and Stock

    ABB Low Voltage Products and Systems 5SGF 40L4502

    Thyristor: hockey-puck; 4.5kV; Ifmax: 1.85kA; 1.18kA; Igt: 4A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME 5SGF 40L4502 1
    • 1 $2942.07
    • 10 $2479.74
    • 100 $2479.74
    • 1000 $2479.74
    • 10000 $2479.74
    		Get Quote

    Hitachi Energy 5SGF40L4502

    GTO THYRISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Richardson RFPD 5SGF40L4502 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    40L4502 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GTO thyristor

    Abstract: ABB GTO ABB thyristor 5 THYRISTOR GTO gto peak reverse voltage test abb GTO thyristor ABB
    Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 4000 25 1.20 0.65 2800 V A kA V Gate turn-off Thyristor 5SGF 40L4502 mΩ V Doc. No. 5SYA 1209-03 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original     		PDF 40L4502 40L4502 CH-5600 GTO thyristor ABB GTO ABB thyristor 5 THYRISTOR GTO gto peak reverse voltage test abb GTO thyristor ABB

    GTO thyristor ABB

    Abstract: 40L4502
    Text: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 4000 25x103 1.2 0.65 2800 V A A V mΩ Ω V Asymmetric Gate turn-off Thyristor 5SGF 40L4502 Doc. No. 5SYA1209-04 Jan. 03 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original     		PDF 40L4502 5SYA1209-04 40L4502 CH-5600 GTO thyristor ABB

    Untitled

    Abstract: No abstract text available
    Text: Key Parameters VDRM = 4500 ITGQM = 4000 ITSM = 25 VT0 = 1.20 rT = 0.65 VDClink = 2800 V A kA V Gate turn-off Thyristor 5SGF 40L4502 mΩ V Doc. No. 5SYA 1209-04 April 98 Features The 5SGF 40L4502 is a 91 mm buffered layer GTO with exceptionally low dynamic and static


    Original     		PDF 40L4502 40L4502 CH-5600

    ABB thyristor 5

    Abstract: GTO thyristor ABB THYRISTOR GTO
    Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 4000 25 1.08 0.29 2800 V A kA V Gate turn-off Thyristor 5SGT 40L4502 mΩ V MARKETING INFORMATION Doc. No. 5SYA 1235-00 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses


    Original     		PDF 40L4502 40L4502 CH-5600 ABB thyristor 5 GTO thyristor ABB THYRISTOR GTO

    40L4502

    Abstract: 123500
    Text: Key Parameters VDRM = 4500 ITGQM = 4000 ITSM = 25 VT0 = 1.08 rT = 0.29 VDClink = 2800 V A kA V Gate turn-off Thyristor 5SGT 40L4502 Marketing Information mΩ V Doc. No. 5SYA 1235-00 Oct. 98 Features The 5SGT 40L4502 is an 91 mm buffered layer, Transparent Emitter non-shorted anode GTO


    Original     		PDF 40L4502 40L4502 CH-5600 123500

    5SGF40L4502

    Abstract: No abstract text available
    Text: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 4000 25x103 1.2 0.65 2800 V A A V mΩ V Asymmetric Gate turn-off Thyristor 5SGF 40L4502 Doc. No. 5SYA1209-04 Feb. 05 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original     		PDF 40L4502 5SYA1209-04 40L4502 CH-5600 5SGF40L4502

    reverse-conducting thyristor

    Abstract: gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor
    Text: I Power Electronic Devices 1 Power Electronics Kaushik Rajashekara, Sohail Anwar, Vrej Barkhordarian, Alex Q. Huang Overview • Diodes • Schottky Diodes • Thyristors • Power Bipolar Junction Transistors • MOSFETs • General Power Semiconductor Switch Requirements • Gate


    Original     		PDF MCT00, reverse-conducting thyristor gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor

    5SDF01R2501

    Abstract: 5SGA 5SGA30J2501 RTK 031
    Text: A S Y M M E T R I C _ G T Q T H Y R I S T O R S - ± X 0 GTO - Patentierter freier Druckkontakt. - Alle GTOs werden unter Ausschalt­ grenzwerten getestet. - Ausgezeichnete O ptimierung zwiscl Durchlass- und Schaltverlusten. - Spezifizierte Höhenstrahlungsfes­


    OCR Scan     		PDF 01R2501 05D2501 05D2501 15F2502 20H2501 25H2501 30J2501 20H4502 11F2501 03D4501 5SDF01R2501 5SGA 5SGA30J2501 RTK 031