40GHZ TRANSISTOR Search Results

Contextual Info: EC2612 RoHS COMPLIANT 40GHz Super Low Noise pHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm pHEMT technology. Gate width is 120µm and the 0.15µm

EC2612

Abstract: ec2612 pHEMT MAR 618 transistor
Contextual Info: EC2612 RoHS COMPLIANT 40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm

ec2612 phemt

Abstract: pHEMT transistor 30GHz EC2612 MAR 618 transistor LS 9814
Contextual Info: EC2612 RoHS COMPLIANT 40GHz Super Low Noise pHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm pHEMT technology. Gate width is 120µm and the 0.15µm

ec2612 pHEMT

Abstract: pHEMT transistor 30GHz EC2612 TRANSISTOR 30GHZ
Contextual Info: EC2612 40GHz Super Low Noise PHEMT Pseudomorphic High Electron mobility transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm T-shaped aluminium gate features low

pHEMT transistor 30GHz

Abstract: EC2612 ec2612 pHEMT 158467
Contextual Info: EC2612 40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm T-shaped aluminium gate features low

02VO

Abstract: CHA4094
Contextual Info: CHA4094 36-40GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA4094 is a high gain broadband threestage balanced monolithic power amplifier. It is designed for a wide range of applications, from military to commercial communication systems.

Contextual Info: CHA2097a RoHS COMPLIANT 20-40GHz Variable Gain Amplifier GaAs Monolithic Microwave IC Description Vd1 The CHA2097a is a variable gain broadband three-stage monolithic amplifier. It is designed for a wide range of applications, from military to commercial communication

HEMT 36 ghz transistor

Abstract: low noise x band hemt transistor BP 109 transistor KA transistor 26 to 40 GHZ 40Ghz transistor
Contextual Info: EC2827 40GHz Super Low Noise HEMT AlGaAs/GaAs Field Effect Transistor Description The EC2827 is a Ka/K band Schottky barrier High Electron Mobility Transistor. This device is based on a 0.25µm mushroom Aluminium gate associated with an HEMT active layer and passivated with

Contextual Info: CHA2097a 20-40GHz Variable Gain Amplifier GaAs Monolithic Microwave IC Description Vd1 The CHA2097a is a variable gain broadband three-stage monolithic amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The

Contextual Info: CHA2095a RoHS COMPLIANT 36-40GHz Low Noise Very High Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2095a is a four-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems.

CHA2395

Contextual Info: CHA2395 RoHS COMPLIANT 36-40GHz Low Noise Very High Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2395 is a four-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems.

c 4977 transistor

Abstract: transistor on 4436
Contextual Info: CHA2095a RoHS COMPLIANT 36-40GHz Low Noise Very High Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2095a is a four-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems.

CHA2395

Contextual Info: CHA2395 RoHS COMPLIANT 36-40GHz Low Noise Very High Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2395 is a four-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems.

CHA4094

Contextual Info: CHA4094 36-40GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA4094 is a high gain broadband threestage balanced monolithic power amplifier. It is designed for a wide range of applications, from military to commercial communication systems.

Contextual Info: CHA2095a RoHS COMPLIANT 36-40GHz Low Noise Very High Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2095a is a four-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems.

Contextual Info: CHA2097a RoHS COMPLIANT 20-40GHz Variable Gain Amplifier GaAs Monolithic Microwave IC Description Vd1 The CHA2097a is a variable gain broadband three-stage monolithic amplifier. It is designed for a wide range of applications, from military to commercial communication

ec2612 phemt

Abstract: EC2612
Contextual Info: EC2612 40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor ¦ Chip size : 0.63 x 0.37 x 0.1 mm Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm

CHA2097

Contextual Info: CHA2097a RoHS COMPLIANT 20-40GHz Variable Gain Amplifier GaAs Monolithic Microwave IC Description Vd1 The CHA2097a is a variable gain broadband threestage monolithic amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip

c 4977 transistor

Contextual Info: CHA2095a 36-40GHz Low Noise Very High Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2095a is a four-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a HEMT

CHA2395

Abstract: transistor BP 109
Contextual Info: CHA2395 36-40GHz Low Noise Very High Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2395 is a four-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a HEMT

transistor on 4436

Abstract: c 4977 transistor
Contextual Info: CHA2095a 36-40GHz Low Noise Very High Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2095a is a four-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a HEMT

Contextual Info: united monolithic semiconductors . a r*L i a A n n ;y a UrlA4Uy4 a « - 36-40GHz High Power Amplifier GaAs Monolithic Microwave 1C Vq Description Vd1,2 Vd3 The CHA4094 is a high gain broadband threestage balanced monolithic power amplifier. It is designed for a wide range of applications, from

super bonder 325

Abstract: ls40f
Contextual Info: EC1840 4 0 G H z LOW N O I SE FET G a A s F I E L D E F F E C T T R A N S I S T O R NOT FOR NEW DESIGNS. USE EC2827 REPLACEMENT. FEATURES • Low noise figure : N F min = 1.5dB typ. at 18GHz N F min. = 3dB (typ.) at 40GHz • High associated gain : G a = 11.5dB (typ.) at 18GHz

Contextual Info: GaAs, pHEMT, MMIC, High Gain Power Amplifier, 2 GHz to 50 GHz HMC1127 Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM VDD 2 HMC1127 3 RFIN RFOUT 1 5 VGG1 4 VGG2 13085-001 Output power for 1 dB compression P1dB : 12.5 dBm typical at 8 GHz to 30 GHz Saturated output power (PSAT): 17.5 dBm typical at 8 GHz to