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    40D VISHAY Search Results

    40D VISHAY Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    ISL28617VY100EV1Z Renesas Electronics Corporation 40V Precision In-Amp Evaluation Board With Vishay Bulk Metal® Foil Resistors Visit Renesas Electronics Corporation
    ISL28617VY10EV1Z Renesas Electronics Corporation 40V Precision In-Amp Evaluation Board With Vishay Bulk Metal® Foil Resistors Visit Renesas Electronics Corporation
    ISL28617VY25EV1Z Renesas Electronics Corporation 40V Precision In-Amp Evaluation Board With Vishay Bulk Metal® Foil Resistors Visit Renesas Electronics Corporation

    40D VISHAY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7139DP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.0055 at VGS = - 10 V - 40d 0.0090 at VGS = - 4.5 V - 40d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF Si7139DP 2002/95/EC Si7139DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    si7139

    Abstract: Si7139DP K1 40D
    Text: New Product Si7139DP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.0055 at VGS = - 10 V - 40d 0.0090 at VGS = - 4.5 V - 40d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF Si7139DP 2002/95/EC Si7139DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si7139 K1 40D

    si7139

    Abstract: 40D vishay
    Text: New Product Si7139DP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.0055 at VGS = - 10 V - 40d 0.0090 at VGS = - 4.5 V - 40d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF Si7139DP 2002/95/EC Si7139DP-T1-GE3 18-Jul-08 si7139 40D vishay

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7139DP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.0055 at VGS = - 10 V - 40d 0.0090 at VGS = - 4.5 V - 40d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF Si7139DP 2002/95/EC Si7139DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7139DP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.0055 at VGS = - 10 V - 40d 0.0090 at VGS = - 4.5 V - 40d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF Si7139DP 2002/95/EC Si7139DP-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7139DP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.0055 at VGS = - 10 V - 40d 0.0090 at VGS = - 4.5 V - 40d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF Si7139DP 2002/95/EC Si7139DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    MICREL

    Abstract: ss24 diode t1b DIODE diode ss24 SPRAGUE SEMICONDUCTOR GRM42-6 MIC4684BM SS24 SS24 DIODE schottky 594D156X0035D2T
    Text: Application Hint 40d Micrel Application Hint 40d ±3.3V/0.5A Split Power Supply by Jeff Dixon VIN 4.85V to 30V C1 15 F 35V U1 MIC4684BM 3 8 VIN EN BS 4 SW 1 FB 5 C3 0.33 F 50V 68 H R1 3.01k D1 2A/40V GND SOP-8 VOUT +3.3V @ 0.5A T1A 2, 6, 7 C2 330 F 6.3V R2


    Original
    PDF MIC4684BM A/40V 594D156X0035D2T 594D227X06R3CT2 MICREL ss24 diode t1b DIODE diode ss24 SPRAGUE SEMICONDUCTOR GRM42-6 MIC4684BM SS24 SS24 DIODE schottky 594D156X0035D2T

    SE40PB

    Abstract: No abstract text available
    Text: SE40PB, SE40PD, SE40PG, SE40PJ www.vishay.com Vishay General Semiconductor Surface Mount ESD Capability Rectifiers FEATURES eSMP Series • Very low profile - typical height of 1.1 mm Available • Ideal for automated placement K • Oxid planar chip junction


    Original
    PDF SE40PB, SE40PD, SE40PG, SE40PJ J-STD-020, AEC-Q101 O-277A 2002/95/EC. 2002/95/EC SE40PB

    SE40PB

    Abstract: No abstract text available
    Text: SE40PB, SE40PD, SE40PG, SE40PJ www.vishay.com Vishay General Semiconductor Surface Mount ESD Capability Rectifiers FEATURES eSMP Series • Very low profile - typical height of 1.1 mm Available • Ideal for automated placement K • Oxid planar chip junction


    Original
    PDF SE40PB, SE40PD, SE40PG, SE40PJ J-STD-020, AEC-Q101 O-277A 2002/95/EC. 2002/95/EC 2011/65/EU. SE40PB

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Bare Die Optoelectronics Bare Die Portfolio Infrared Emitters and Photo Detectors TABLE OF CONTENTS Introduction to Bare


    Original
    PDF VMN-SG2200-1502

    BA979

    Abstract: No abstract text available
    Text: BA979.BA979S VISHAV Vishay Telefunken Silicon PIN Diodes Features • Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators Absolute Maximum Ratings Tj = 25°C Parameter Reverse voltage Forward current


    OCR Scan
    PDF BA979 BA979S 50mmx50mmx1 01-Apr-99