40D VISHAY Search Results
40D VISHAY Datasheets Context Search
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Contextual Info: New Product Si7139DP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.0055 at VGS = - 10 V - 40d 0.0090 at VGS = - 4.5 V - 40d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si7139DP 2002/95/EC Si7139DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
si7139
Abstract: Si7139DP K1 40D
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Si7139DP 2002/95/EC Si7139DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si7139 K1 40D | |
si7139
Abstract: 40D vishay
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Si7139DP 2002/95/EC Si7139DP-T1-GE3 18-Jul-08 si7139 40D vishay | |
Contextual Info: New Product Si7139DP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.0055 at VGS = - 10 V - 40d 0.0090 at VGS = - 4.5 V - 40d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si7139DP 2002/95/EC Si7139DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: New Product Si7139DP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.0055 at VGS = - 10 V - 40d 0.0090 at VGS = - 4.5 V - 40d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si7139DP 2002/95/EC Si7139DP-T1-GE3 11-Mar-11 | |
Contextual Info: New Product Si7139DP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.0055 at VGS = - 10 V - 40d 0.0090 at VGS = - 4.5 V - 40d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si7139DP 2002/95/EC Si7139DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
MICREL
Abstract: ss24 diode t1b DIODE diode ss24 SPRAGUE SEMICONDUCTOR GRM42-6 MIC4684BM SS24 SS24 DIODE schottky 594D156X0035D2T
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MIC4684BM A/40V 594D156X0035D2T 594D227X06R3CT2 MICREL ss24 diode t1b DIODE diode ss24 SPRAGUE SEMICONDUCTOR GRM42-6 MIC4684BM SS24 SS24 DIODE schottky 594D156X0035D2T | |
BA979Contextual Info: BA979.BA979S VISHAV Vishay Telefunken Silicon PIN Diodes Features • Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators Absolute Maximum Ratings Tj = 25°C Parameter Reverse voltage Forward current |
OCR Scan |
BA979 BA979S 50mmx50mmx1 01-Apr-99 | |
SE40PBContextual Info: SE40PB, SE40PD, SE40PG, SE40PJ www.vishay.com Vishay General Semiconductor Surface Mount ESD Capability Rectifiers FEATURES eSMP Series • Very low profile - typical height of 1.1 mm Available • Ideal for automated placement K • Oxid planar chip junction |
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SE40PB, SE40PD, SE40PG, SE40PJ J-STD-020, AEC-Q101 O-277A 2002/95/EC. 2002/95/EC SE40PB | |
SE40PBContextual Info: SE40PB, SE40PD, SE40PG, SE40PJ www.vishay.com Vishay General Semiconductor Surface Mount ESD Capability Rectifiers FEATURES eSMP Series • Very low profile - typical height of 1.1 mm Available • Ideal for automated placement K • Oxid planar chip junction |
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SE40PB, SE40PD, SE40PG, SE40PJ J-STD-020, AEC-Q101 O-277A 2002/95/EC. 2002/95/EC 2011/65/EU. SE40PB | |
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Bare Die Optoelectronics Bare Die Portfolio Infrared Emitters and Photo Detectors TABLE OF CONTENTS Introduction to Bare |
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VMN-SG2200-1502 |