40CPQ035 Search Results

Contextual Info: Bulletin PD-20789 rev. A 11/06 40CPQ035PbF 40CPQ040PbF 40CPQ045PbF SCHOTTKY RECTIFIER 40 Amp IF AV = 40Amp VR = 35/ 45V Description/ Features Major Ratings and Characteristics Characteristics Values Units 40 A VRRM 35/ 45 V IFSM @ tp = 5 s sine 3500 A VF

40CPQ045PBF

Abstract: 40CPQ045 rectifier d 355 n 2000 40CPQ035PBF 40CPQ035 40CPQ040 40HF P035H P460
Contextual Info: Bulletin PD-20789 08/04 40CPQ035PbF 40CPQ040PbF 40CPQ045PbF SCHOTTKY RECTIFIER 40 Amp IF AV = 40Amp VR = 35 to 45V Description/ Features Major Ratings and Characteristics Characteristics The 40CPQ.PbF center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate

Contextual Info: BL GALAXY ELECTRICAL 40CPQ035 - 40CPQ045 VOLTAGE RANGE: 35 - 45 V CURRENT: 40 A DUAL SCHOTTKY RECTIFIERS FEATURES High s urge capacity. TO-220AB For us e in low voltage, high frequency inverters , free 111wheeling, and polarity protection applications .

Contextual Info: 40CPQ035 40CPQ040 40CPQ045 SANGDEST MICROELECTRONICS Technical Data Data Sheet N0695, Rev. - Green Products 40CPQ035 40CPQ040 40CPQ045 SCHOTTKY RECTIFIER Applications: • • • • Switching power supply Converters Free-Wheeling diodes Reverse battery protection

Contextual Info: Bulletin PD-20789 rev. A 11/06 40CPQ035PbF 40CPQ040PbF 40CPQ045PbF SCHOTTKY RECTIFIER 40 Amp IF AV = 40Amp VR = 35/ 45V Description/ Features Major Ratings and Characteristics Characteristics Values Units 40 A VRRM 35/ 45 V IFSM @ tp = 5 s sine 3500 A VF

Contextual Info: 40CPQ035PbF/40CPQ040PbF/40CPQ045PbF Vishay High Power Products Schottky Rectifier, 2 x 20 A FEATURES • 150 °C TJ operation Base common cathode 2 Pb-free • Center tap TO-247 package Available • Very low forward voltage drop RoHS* COMPLIANT • High frequency operation

Contextual Info: 40CPQ035 Diodes Center-Tapped Positive CC Schottky Rectifier Military/High-RelN I O Max.(A) Output Current40 @Temp (øC) (Test Condition)120# V(RRM)(V) Rep.Pk.Rev. Voltage35 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.3500 V(FM) Max.(V) Forward Voltage.56m @I(FM) (A) (Test Condition)40

40CPQ035

Abstract: 40CPQ040 40CPQ045 40HFL40S02 IRFP460 40CPQ045PBF
Contextual Info: 40CPQ035PbF/40CPQ040PbF/40CPQ045PbF Vishay High Power Products Schottky Rectifier, 2 x 20 A FEATURES • 150 °C TJ operation Base common cathode 2 Pb-free • Center tap TO-247 package Available • Very low forward voltage drop RoHS* COMPLIANT • High frequency operation

40CPQ035

Abstract: 40CPQ045 035H 40CPQ040 IRFP460 B1201
Contextual Info: Bulletin PD-2.307 rev. B 12/01 40CPQ035 40CPQ040 40CPQ045 SCHOTTKY RECTIFIER 40 Amp Major Ratings and Characteristics Characteristics Description/Features 40CPQ. Units 40 A 35/40/45 V IFSM @ tp = 5 µs sine 3500 A VF 0.43 V - 55 to 150 °C IF AV Rectangular

40CPQ035

Abstract: 40CPQ040 40CPQ045 40L40CW FST4035 FST4040 FST4045 MBR4035WT MBR4040WT CJ120
Contextual Info: 40 Amp Schottky Rectifier FST4035 - FST4045 Dim. Inches Minimum FST4035 FST4040 FST4045 Industry P art Number Repetitive Peak Reverse Voltage 40CPQ035 MBR4035WT 40CPQ040 40L40CW MBR4040WT 40CPQ045 40L45CW MBR4045WT Maximum Minimum .185 .087 .059 .040 .079

40CPQ045PBF

Contextual Info: 40CPQ035PbF/40CPQ040PbF/40CPQ045PbF Vishay High Power Products Schottky Rectifier, 2 x 20 A FEATURES • 150 °C TJ operation Base common cathode 2 Pb-free • Center tap TO-247 package Available • Very low forward voltage drop RoHS* COMPLIANT • High frequency operation

40CPQ035PBF

Abstract: 40CPQ035 40CPQ040 40CPQ045 40HFL40S02 IRFP460 40CPQ045PBF
Contextual Info: 40CPQ035PbF/40CPQ040PbF/40CPQ045PbF Vishay High Power Products Schottky Rectifier, 2 x 20 A FEATURES • 150 °C TJ operation Base common cathode 2 Pb-free • Center tap TO-247 package Available • Very low forward voltage drop RoHS* COMPLIANT • High frequency operation

40CPQ040

Abstract: 40CPQ035 40CPQ045 40HFL40S02 IRFP460
Contextual Info: 40CPQ035/40CPQ040/40CPQ045 Vishay High Power Products Schottky Rectifier, 2 x 20 A FEATURES Base common cathode 2 • 150 °C TJ operation • Center tap TO-247 package • Very low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for

40CPQ035

Abstract: 035H 40CPQ040 40CPQ045 40HF P460 PQ045
Contextual Info: Bulletin PD-2.307 rev. C 10/06 40CPQ035 40CPQ040 40CPQ045 SCHOTTKY RECTIFIER 40 Amp IF AV = 40Amp VR = 30/ 45V Description/ Features Major Ratings and Characteristics Characteristics IF(AV) Rectangular Values Units 40 A 35/ 45 V 3500 A 0.43 V - 55 to 150

40CPQ035

Abstract: 40CPQ040 40CPQ045 40CPQ045PBF
Contextual Info: 40CPQ035PbF/40CPQ040PbF/40CPQ045PbF Vishay High Power Products Schottky Rectifier, 2 x 20 A FEATURES • 150 °C TJ operation Base common cathode 2 Pb-free • Center tap TO-247 package Available • Very low forward voltage drop RoHS* COMPLIANT • High frequency operation

40CPQ045PBF

Abstract: 40CPQ035PBF 40CPQ035 40CPQ040 40CPQ045 40HF P035H P460
Contextual Info: Bulletin PD-20789 rev. A 11/06 40CPQ035PbF 40CPQ040PbF 40CPQ045PbF SCHOTTKY RECTIFIER 40 Amp IF AV = 40Amp VR = 35/ 45V Description/ Features Major Ratings and Characteristics Characteristics Values Units 40 A VRRM 35/ 45 V IFSM @ tp = 5 s sine 3500 A VF

40CPQ035

Abstract: 40CPQ045 035H 40CPQ040 40HF
Contextual Info: Bulletin PD-2.307 rev. C 10/06 40CPQ035 40CPQ040 40CPQ045 SCHOTTKY RECTIFIER 40 Amp IF AV = 40Amp VR = 30/ 45V Description/ Features Major Ratings and Characteristics Characteristics IF(AV) Rectangular Values Units 40 A 35/ 45 V 3500 A 0.43 V - 55 to 150

247AA

Abstract: 40CPQ035 40CPQ040 40CPQ045 40HFL40S02 IRFP460
Contextual Info: 2002-02-19 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-234-76 40CPQ035 sch diodTO-247AA 70-234-84 40CPQ040 sch diodTO-247AA 70-234-92 40CPQ045 sch diodTO-247AA PD-2.307 rev. A 12/97

40CPQ035

Abstract: 40CPQ045 40CPQ040 40HFL40S02 IRFP460 23-07
Contextual Info: PD-2.307 rev. A 12/97 40CPQ035 40CPQ040 40CPQ045 SCHOTTKY RECTIFIER 40 Amp Major Ratings and Characteristics Characteristics Description/Features 40CPQ. Units 40 A 35/40/45 V IFSM @ tp = 5 µs sine 3500 A VF 0.43 V - 55 to 150 °C IF AV Rectangular waveform

MBR4035WT

Abstract: 40CPQ035 40CPQ040 40CPQ045 40L40CW FST4035 FST4040 FST4045 MBR4040WT
Contextual Info: 40 Amp Scho ttky Rectifier FST4035 FST4045 Dim. Inches - Minimum c M illim eter Maximum Minimum Maximum Notes .185 .087 .059 .040 .079 .118 .016 .819 .627 .215 .790 .157 .139 .255 .170 .080 A B C D E F G H J K L M N P Q R .209 .102 .098 .055 .094 .133 .031

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced