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Swissbit SFEM4096B1EA1TO-I-GE-121-STD IC FLASH 32GBIT EMMC 153BGA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SFEM4096B1EA1TO-I-GE-121-STD	Tray	271		1	1 $15.37 10 $13.641 100 $12.24438 1000 $11.20375 10000 $11.20375	Buy Now
Mouser Electronics	SFEM4096B1EA1TO-I-GE-121-STD		26			1 $15.28 10 $13.63 100 $11.35 1000 $9.68 10000 $9.68	Buy Now
Newark	SFEM4096B1EA1TO-I-GE-121-STD	Bulk	5		1	1 $3.73 10 $3.73 100 $3.73 1000 $3.73 10000 $3.73	Buy Now
Neutron USA	SFEM4096B1EA1TO-I-GE-121-STD		50			1 $105.5 10 $105.5 100 $105.5 1000 $105.5 10000 $105.5	Buy Now
Brady Worldwide Inc 4096-B B915 STYLE B WHT/BLU MEDICAL AIR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	4096-B	Bulk			1	1 $9.14 10 $9.14 100 $9.14 1000 $9.14 10000 $9.14	Buy Now
Onlinecomponents.com	4096-B					1 $7.99 10 $7.67 100 $7.67 1000 $7.67 10000 $7.67	Buy Now
Rochester Electronics LLC CD4096BF3 CMOS GATED J-K MASTER-SLAVE FLIP
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DigiKey	CD4096BF3	Bulk			205	1 - 10 - 100 - 1000 $1.47 10000 $1.47	Buy Now
Alliance Memory Inc AS7C34096B-10BIN IC SRAM 4MBIT PARALLEL 36TFBGA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AS7C34096B-10BIN	Tray			480	1 - 10 - 100 - 1000 $4.65696 10000 $4.65696	Buy Now
Avnet Americas	AS7C34096B-10BIN	Tray		20 Weeks	480	1 - 10 - 100 - 1000 $4.08076 10000 $3.50748	Buy Now
Mouser Electronics	AS7C34096B-10BIN		79			1 $6.17 10 $5.63 100 $4.92 1000 $4.4 10000 $4.4	Buy Now
Newark	AS7C34096B-10BIN	Bulk			480	1 - 10 - 100 - 1000 $5.25 10000 $5.25	Buy Now
Alliance Memory Inc AS7C34096B-10TIN IC SRAM 4MBIT PARALLEL 48TSOP I
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AS7C34096B-10TIN	Tray			135	1 - 10 - 100 - 1000 $4.97467 10000 $4.97467	Buy Now
Avnet Americas	AS7C34096B-10TIN	Tray		12 Weeks	135	1 - 10 - 100 - 1000 $4.30394 10000 $3.72335	Buy Now
Mouser Electronics	AS7C34096B-10TIN					1 $6.18 10 $5.64 100 $4.92 1000 $4.8 10000 $4.75	Get Quote
Newark	AS7C34096B-10TIN	Bulk			135	1 - 10 - 100 $6.56 1000 $5.25 10000 $5.25	Buy Now
TME	AS7C34096B-10TIN				1	1 $5.56 10 $5.25 100 $4.94 1000 $4.64 10000 $4.64	Get Quote

Karl Kruse GmbH & Co KG	AS7C34096B-10TIN		9,981			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	AS7C34096B-10TIN			13 Weeks	135	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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4096B Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
4096-B		Brady Worldwide	B915 STYLE B WHT/BLU MEDICAL AIR		Original	PDF
4096B		Unknown	The CMOS Device Manual (Japanese) 1993		Scan	PDF

4096B Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: TH58BVG3S0HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 8 GBIT 1G x 8 BIT CMOS NAND E PROM DESCRIPTION The TH58BVG3S0HBAI6 is a single 3.3V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 4096blocks.	Original	PDF	TH58BVG3S0HBAI6 TH58BVG3S0HBAI6 4096blocks. 4224-byte 4224-bytes 2013-09-20C
Untitled Abstract: No abstract text available Text: TH58BYG3S0HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 8 GBIT 1G x 8 BIT CMOS NAND E PROM DESCRIPTION The TH58BYG3S0HBAI4 is a single 1.8V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 4096blocks.	Original	PDF	TH58BYG3S0HBAI4 TH58BYG3S0HBAI4 4096blocks. 4224-byte 4224-bytes 2013-09-20C
EEPROM Abstract: AK6440BH AK6440BL Text: ASAHI KASEI [AK6440B] AK6440B 4096bit Serial CMOS EEPROM Features         ADVANCED CMOS EEPROM TECHNOLOGY Wide VCC 1.8V ~ 5.5V operation 4096 bits: 256x16 organization ONE CHIP MICROCOMPUTER INTERFACE - Interface with one chip microcomputer's serial communication port directly	Original	PDF	AK6440B] AK6440B 4096bit EEPROM AK6440BH AK6440BL
TC58NVG2S3ETA00 Abstract: TC58NVG2S3E NAND read disturb TC58NVG2S3 tc58nvg2s Text: TC58NVG2S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG2S3E is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 4096blocks.	Original	PDF	TC58NVG2S3ETA00 TC58NVG2S3E 4096blocks. 2112-byte 2010-07-13C TC58NVG2S3ETA00 NAND read disturb TC58NVG2S3 tc58nvg2s
TC58NVG2S3ETAI0 Abstract: TC58NVG2S3E TC58NVG2S3 Text: TC58NVG2S3ETAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG2S3E is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 4096blocks.	Original	PDF	TC58NVG2S3ETAI0 TC58NVG2S3E 4096blocks. 2112-byte 2010-07-13C TC58NVG2S3ETAI0 TC58NVG2S3
TC58NYG2S3ETAI0 Abstract: toshiba NAND ID code Text: TC58NYG2S3ETAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG2S3E is a single 1.8V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 4096blocks.	Original	PDF	TC58NYG2S3ETAI0 TC58NYG2S3E 4096blocks. 2112-byte 2010-07-13C TC58NYG2S3ETAI0 toshiba NAND ID code
TC58NVG2S3ETA00 Abstract: TC58NVG2S3 TC58NVG2S3E TC58NVG2S3ET tc58nvg2 0x0000011 tc58nvg2s MPa16 tc58nvg toshiba NAND Technology Code Text: TC58NVG2S3ETA00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG2S3E is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 4096blocks.	Original	PDF	TC58NVG2S3ETA00 TC58NVG2S3E 4096blocks. 2112-byte 2010-01-25C TC58NVG2S3ETA00 TC58NVG2S3 TC58NVG2S3ET tc58nvg2 0x0000011 tc58nvg2s MPa16 tc58nvg toshiba NAND Technology Code
EEPROM Abstract: AK6440BH AK6440BL Text: ASAHI KASEI [AK6440B] AK6440B 4Kbit シリアル EEPROM 特        長先進の CMOS EEPROM テクノロジ電気的書換え可能な不揮発性メモリ単一電源動作（動作電源電圧：1.8V～5.5V） 4096bit 256 ワードx16 ビット構成	Original	PDF	AK6440B] AK6440B 4096bit EEPROM AK6440BH AK6440BL
EEPROM Abstract: AK93C45CL AK93C45CT AK93C55CT AK93C55CU AK93C65CT 93c45 Text: ASAHI KASEI [AK93C45C/55C/65C] AK93C45C/55C/65C 1024/2048/4096bit シリアル CMOS EEPROM 特 □ □ □ □ □ □ □ □ □ □ □ □ □ 長先進の CMOS EEPROM テクノロジ電気的書換え可能な不揮発性メモリ 1.5V～5.5V（READ 動作）1.6V～5.5V（WRITE 動作／WRAL 動作／PAGE WRITE 動作）	Original	PDF	AK93C45C/55C/65C] AK93C45C/55C/65C 1024/2048/4096bit AK93C45Cã 1024bit AK93C55Cã 2048bit AK93C65Cã 4096bit EEPROM AK93C45CL AK93C45CT AK93C55CT AK93C55CU AK93C65CT 93c45
TC58NVG2S3EBAI5 Abstract: Toshiba confidential NAND tc58nvg2s TC58NVG2S3E TC58NVG2S3EB TC58NVG2S3 Text: TC58NVG2S3EBAI5 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M  8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG2S3E is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  64) bytes  64 pages  4096blocks.	Original	PDF	TC58NVG2S3EBAI5 TC58NVG2S3E 4096blocks. 2112-byte TC58NVG2S3EBAI5 Toshiba confidential NAND tc58nvg2s TC58NVG2S3EB TC58NVG2S3
TC58NVG3S0FTA Abstract: No abstract text available Text: TC58NVG3S0FTAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 8 GBIT 1G x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG3S0F is a single 3.3V 8 Gbit (9,076,473,856 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 232) bytes × 64 pages × 4096blocks.	Original	PDF	TC58NVG3S0FTAI0 TC58NVG3S0F 4096blocks. 4328-byte 2011-07-01C TC58NVG3S0FTA
Untitled Abstract: No abstract text available Text: TH58BVG3S0HTA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 8 GBIT 1G x 8 BIT CMOS NAND E PROM DESCRIPTION The TH58BVG3S0HTA00 is a single 3.3V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 4096blocks.	Original	PDF	TH58BVG3S0HTA00 TH58BVG3S0HTA00 4096blocks. 4224-byte 4224-bytes 2013-09-20C
th58nv Abstract: TH58N Text: TH58NVG3S0HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 8 GBIT 1G  8 BIT CMOS NAND E PROM DESCRIPTION The TH58NVG3S0HBAI4 is a single 3.3V 8 Gbit (9,126,805,504 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096  256) bytes  64 pages  4096blocks.	Original	PDF	TH58NVG3S0HBAI4 TH58NVG3S0HBAI4 4096blocks. 4352-byte 2013-09-20C th58nv TH58N
TC58NVG2S3 Abstract: TC58NYG2S3ETA00 TC58NVG2S3ET tc58nvg2s TC58NYG2S3E tc58nvg tc58nvg2 tc58nvg2s3e Text: TC58NYG2S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG2S3E is a single 1.8V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 4096blocks.	Original	PDF	TC58NYG2S3ETA00 TC58NYG2S3E 4096blocks. 2112-byte 2010-07-13C TC58NVG2S3 TC58NYG2S3ETA00 TC58NVG2S3ET tc58nvg2s tc58nvg tc58nvg2 tc58nvg2s3e

TC58NYG2S3EBAI5 Abstract: No abstract text available Text: TC58NYG2S3EBAI5 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M  8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG2S3E is a single 1.8V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  64) bytes  64 pages  4096blocks.	Original	PDF	TC58NYG2S3EBAI5 TC58NYG2S3E 4096blocks. 2112-byte TC58NYG2S3EBAI5
Untitled Abstract: No abstract text available Text: TH58BVG3S0HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 8 GBIT 1G x 8 BIT CMOS NAND E PROM DESCRIPTION The TH58BVG3S0HBAI4 is a single 3.3V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 4096blocks.	Original	PDF	TH58BVG3S0HBAI4 TH58BVG3S0HBAI4 4096blocks. 4224-byte 4224-bytes 2013-09-20C
TC58NVG2S3EBAI5 Abstract: TC58NVG2S3E tc58NVG2S3 Text: TC58NVG2S3EBAI5 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG2S3E is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 4096blocks.	Original	PDF	TC58NVG2S3EBAI5 TC58NVG2S3E 4096blocks. 2112-byte 2010-07-13C TC58NVG2S3EBAI5 tc58NVG2S3
toshiba TC58NVG Abstract: NAND read disturb tc58NVG2S3 Text: TC58NYG2S3EBAI5 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG2S3E is a single 1.8V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 4096blocks.	Original	PDF	TC58NYG2S3EBAI5 TC58NYG2S3E 4096blocks. 2112-byte 2010-07-13C toshiba TC58NVG NAND read disturb tc58NVG2S3
TC58NVG2S3ETA00 Abstract: TC58NVG2S3E hex latch DIN2111 PA16 DSASW00389410 NAND read disturb Text: TC58NVG2S3ETA00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG2S3E is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 4096blocks.	Original	PDF	TC58NVG2S3ETA00 TC58NVG2S3E 4096blocks. 2112-byte 2010-05-21C TC58NVG2S3ETA00 hex latch DIN2111 PA16 DSASW00389410 NAND read disturb
Untitled Abstract: No abstract text available Text: TC58NVG3S0FBAID TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 8 GBIT 1G  8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG3S0FBAID is a single 3.3V 8 Gbit (9,076,473,856 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096  232) bytes  64 pages  4096blocks.	Original	PDF	TC58NVG3S0FBAID TC58NVG3S0FBAID 4096blocks. 4328-byte 2012-01-16C
Untitled Abstract: No abstract text available Text: D M 7 5 /D M 8 5 9 5 ,b M 7 7 /D M 8 7 9 5 Proprietary 4 0 9 6 -B it Read Only Memories General Description Features The D M 7 5 9 5 /D M 8 5 9 5 and D M 7 7 9 5 /D M 8 7 9 5 are 4096b it, b ip o lar, mask-programmable ROMs organized as 512 e ig h t-b it w ords. Nine address inp u ts select the desired	OCR Scan	PDF	4096b one-of-512
4096B Abstract: CD4096B HCC4096B T flip flop cd4 Text: 107 - 4096B — In ve rtin g G ated J K M a s te r Slave Flip Flop • tSffi 7 V ‘y T 7 a - y T JK 9A? ?' T T 'J - f e y h 3 Xf— h ■ x a -v+vr A N D y -t-A ÎJÎrS o G A T E D tr J K V X ? ■Z U - 7 ■7 ' J - / T 7 a - / 7 7n-y?m ±-h±tf> )C TU ft	OCR Scan	PDF	4096B CD4096B HCC4096B CD40956 C04096B CD4096B HCC4096B T flip flop cd4
Untitled Abstract: No abstract text available Text: DS2404 PRELIM IN AR Y DALLAS SEMICONDUCTOR FEATURES DS2404 EconoRAM Time Chip PIN ASSIGNMENT • Unique 1-wire interface requires only one port pin for communication • Contains real-time dock/calendar in binary format • 4096bits of SRAM organized in 16 pages, 256 bits per	OCR Scan	PDF	DS2404 4096bits BATO10. S2404 S2404
Untitled Abstract: No abstract text available Text: [AK93C65/L] ASAHI KASEI AK9 3 C 6 5 / L AKM 4096bit Serial EEPROM Features □ ADVANCED CMOS E2PROM TECHNOLOGY □ READ/WRITE NON-VOLATILE MEMORY □ WIDE VCC OPERATION AK93C65 ••• Vcc = 2.5V ~ 5.5V AK93C65L* Vcc = 1.8V ~ 5.5V Q 4096 bits, 256 X 16 organization	OCR Scan	PDF	AK93C65/L] 4096bit AK93C65 AK93C65L* 0005-E 0T63b35 DG01317

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4096B Search Results

4096B Price and Stock

Swissbit SFEM4096B1EA1TO-I-GE-121-STD

Brady Worldwide Inc 4096-B

Rochester Electronics LLC CD4096BF3

Alliance Memory Inc AS7C34096B-10BIN

Alliance Memory Inc AS7C34096B-10TIN

4096B Datasheets (2)

4096B Datasheets Context Search

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EEPROM

TC58NVG2S3ETA00

TC58NVG2S3ETAI0

TC58NYG2S3ETAI0

TC58NVG2S3ETA00

EEPROM

EEPROM

TC58NVG2S3EBAI5

TC58NVG3S0FTA

Untitled

th58nv

TC58NVG2S3

TC58NYG2S3EBAI5

Untitled

TC58NVG2S3EBAI5

toshiba TC58NVG

TC58NVG2S3ETA00

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Untitled

4096B

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