Untitled
Abstract: No abstract text available
Text: LTC4077 Dual Input Standalone Li-Ion Battery Charger DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ Charges Single-Cell Li-Ion Batteries from Wall Adapter and USB Inputs Automatic Input Power Detection and Selection Charge Current Programmable up to 950mA from
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LTC4077
950mA
10-Lead
4077fa
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Features ◆ ◆ ◆ ◆ ◆ 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture Four independent 16K x 16 banks 1 Megabit of memory on chip Fast asynchronous address-to-data access time: 15ns
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IDT70V7288S/L
16-bit
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g2501
Abstract: LTC4077EDD 50-mV 4077f
Text: LTC4077 Dual Input Standalone Li-Ion Battery Charger U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Charges Single-Cell Li-Ion Batteries from Wall Adapter and USB Inputs Automatic Input Power Detection and Selection Charge Current Programmable up to 950mA from
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LTC4077
950mA
10-Lead
LTC4053
LTC4054/LTC4054X
LTC4065/LTC4065A
LTC4066
LTC4068/LTC4068X
4077f
g2501
LTC4077EDD
50-mV
4077f
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4077 8 pin
Abstract: automatic room power control circuit block diagram Battery charger 24 volt over discharge protection circuit for li-ion battery QFN PACKAGE thermal resistance supplly LTC4077EDD 1100mAH
Text: LTC4077 Dual Input Standalone Li-Ion Battery Charger DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ Charges Single-Cell Li-Ion Batteries from Wall Adapter and USB Inputs Automatic Input Power Detection and Selection Charge Current Programmable up to 950mA from
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LTC4077
950mA
10-Lead
4077fa
4077 8 pin
automatic room power control circuit block diagram
Battery charger 24 volt
over discharge protection circuit for li-ion battery
QFN PACKAGE thermal resistance
supplly
LTC4077EDD
1100mAH
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4077 cmos
Abstract: A13L IDT70V7288 ci 4077
Text: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS IDT70V7288S/L Features ◆ ◆ ◆ ◆ ◆ ◆ 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture – Four independent 16K x 16 banks – 1 Megabit of memory on chip Fast asynchronous address-to-data access time: 15ns
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IDT70V7288S/L
16-bit
200mV
4077 cmos
A13L
IDT70V7288
ci 4077
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ci 4077
Abstract: 4077 cmos truth table for 7 inputs OR gate A13L IDT70V7288
Text: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Features ◆ ◆ ◆ ◆ ◆ 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture Four independent 16K x 16 banks 1 Megabit of memory on chip Fast asynchronous address-to-data access time: 15ns
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16-bit
IDT70V7288S/L
ci 4077
4077 cmos
truth table for 7 inputs OR gate
A13L
IDT70V7288
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A13L
Abstract: IDT70V7288 4077 cmos
Text: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS IDT70V7288S/L Features ◆ ◆ ◆ ◆ ◆ ◆ 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture – Four independent 16K x 16 banks – 1 Megabit of memory on chip Fast asynchronous address-to-data access time: 15ns
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IDT70V7288S/L
16-bit
200mV
A13L
IDT70V7288
4077 cmos
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CDBM455C7
Abstract: 4077 8 pin LA8608V SSOP24 IC 4077
Text: Ordering number: EN 4077A Monolithic Linear IC LA8608V 1.8 V Low-Voltage Narrowband FM-IF System Overview Package Dimensions The LA8608V is a narrowband FM-IF system intended for communications equipment, operates at just 1.8 V, and is contained in an ultrasmall package with a 0.65 mm pitch. In
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LA8608V
LA8608V
175A-SSOP24
LA8608V]
CDBM455C7
4077 8 pin
SSOP24
IC 4077
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A12L
Abstract: A13L IDT70V7288
Text: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS IDT70V7288S/L Features ◆ ◆ ◆ ◆ ◆ ◆ 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture – Four independent 16K x 16 banks – 1 Megabit of memory on chip Fast asynchronous address-to-data access time: 15ns
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IDT70V7288S/L
16-bit
200mV
A12L
A13L
IDT70V7288
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A12L
Abstract: A13L IDT70V7288 4077 cmos
Text: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Integrated Device Technology, Inc. PRELIMINARY IDT70V7288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture — Four independent 16K x 16 banks
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IDT70V7288S/L
16-bit
x1670V7288S/L
100-pin
PN100-1)
70V7288
A12L
A13L
IDT70V7288
4077 cmos
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A13L
Abstract: IDT70V7288 ci 4077
Text: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT70V7288S/L Features ◆ ◆ ◆ ◆ ◆ 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture – Four independent 16K x 16 banks – 1 Megabit of memory on chip
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IDT70V7288S/L
16-bit
A13L
IDT70V7288
ci 4077
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS IDT70V7288S/L Features ◆ ◆ ◆ ◆ ◆ ◆ 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture – Four independent 16K x 16 banks – 1 Megabit of memory on chip Fast asynchronous address-to-data access time: 15ns
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IDT70V7288S/L
16-bit
200mV
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ci 4077
Abstract: A12L A13L IDT70V7288
Text: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Integrated Device Technology, Inc. PRELIMINARY IDT70V7288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture — Four independent 16K x 16 banks
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IDT70V7288S/L
16-bit
100-pin
PN100-1)
70V7288
ci 4077
A12L
A13L
IDT70V7288
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A13L
Abstract: IDT70V7288
Text: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Integrated Device Technology, Inc. ADVANCED IDT70V7288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Four independent 16K x 16 banks
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IDT70V7288S/L
16-bit
IDT70V7288
100-pin
PN100-1)
70V7288
A13L
IDT70V7288
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40136
Abstract: ROS-4077-119
Text: Surface Mount Voltage Controlled Oscillator 5V Tuning for PLL IC’s ROS-4077-119+ 3876 to 4077 MHz Features • Linear Tuning characteristics • Low Phase Noise • Low Pulling • Low Pushing • Aqueous washable CASE STYLE: CK605 PRICE: $19.95 ea. QTY 5-49
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ROS-4077-119+
CK605
2002/95/EC)
10KHz
100KHz
40136
ROS-4077-119
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IDT7M4077
Abstract: No abstract text available
Text: 256K x 32 BiCMOS/CMOS STATIC RAM MODULE PRELIMINARY IDT7M4077 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 8 megabit static RAM module The ID T7M 4077 is a 256K x 32 static RAM module con structed on a multilayer ceramic substrate using eight 256Kx4
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IDT7M4077
256Kx4
200mV
IDT7M4077
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IDT7M4077
Abstract: kw05 2814t
Text: PRELIMINARY IDT7M4077 256K x 32 BiCMOS/CMOS STATIC RAM MODULE Integrated D evice Technology» Inc. FEATURES: DESCRIPTION: • High density 8 megabit static RAM module The ID T7M 4077 is a 256K x 32 static RAM module con structed on a mu Itilay er ceramic substrate using eight 256Kx4
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IDT7M4077
I/O10
I/O11
I/012
IDT7M4077
kw05
2814t
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3144E
Abstract: telefunken u DIODE bfp 86 4077 8 pin
Text: MME D E a Ä ^H O C nb 00111121 Ö S A L GG U 4077 B U 4077 B-FP 'W T Ü L llF y iM K tilM l e l e c t r o n i c Creative Technologies Three tone ringer for telephone sets, signal generator in cars and toys Techn olo gy: Bipolar TE LEFU N K E N E L E C T R O N IC
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l0L15l8x
3144E
telefunken u
DIODE bfp 86
4077 8 pin
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STK772B
Abstract: 3032B LA5601 LA5009M
Text: Continuée from previous page Package Device Type Number of Drawing pins and number configuration Description Feature* : • LA5005M MFP 8 3032B 5 V low-saturation voltage regulator Miniflat package version o1 the LA5005 LA5006M MFP 8 3032B 6 V low-saturation voltage regulator
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LA5005M
LA5006M
3032B
3032B
LA5005
STK733C
STK740B'
STK740C
STK743B
STK772B
STK772B
LA5601
LA5009M
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IN 4077
Abstract: IC 4077 910UB
Text: \dt Integrated Device Technology, Inc. HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT70V7288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture — Four independent 16K x 16 banks
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IDT70V7288S/L
16-bit
IDT70V7288
IDT70V7288S/L
100-pin
PN100-1)
70V7288
IN 4077
IC 4077
910UB
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Untitled
Abstract: No abstract text available
Text: Technical Documents Specifications subject to change. For latest design specifications. 1- 800- 522-6752 The following is a list of technical documents covering the application, performance and maintenance of AMP RF connectors. Product Specifications describe technical performance
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT70V7288S/L Features 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture processor communications; interrupt option Interrupt flags with programmable masking
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IDT70V7288S/L
100-pin
16-bit
O-136,
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Untitled
Abstract: No abstract text available
Text: Integrated D e v ile Technology, li e . HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT70V7288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture — Four independent 16K x 16 banks
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IDT70V7288S/L
16-bit
100-pin
PN100-1)
70V7288
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Untitled
Abstract: No abstract text available
Text: In te g ra te d D e v ile T e c h n o lo g y , l i e . HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT70V7288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture — Four independent 16K x 16 banks
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IDT70V7288S/L
16-bit
MO-136,
492-M
PSC-4036
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