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    400V 70A POWER MOSFET Search Results

    400V 70A POWER MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    400V 70A POWER MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: APT60M60JFLL 600V 70A 0.060Ω R POWER MOS 7 FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT60M60JFLL OT-227

    Untitled

    Abstract: No abstract text available
    Text: APT60M60JLL 800V 70A 0.060Ω R POWER MOS 7 S S MOSFET 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT60M60JLL OT-227

    400V 70A power mosfet

    Abstract: No abstract text available
    Text: APT60M60JLL 800V 70A 0.060Ω POWER MOS 7 R S S MOSFET 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT60M60JLL OT-227 400V 70A power mosfet

    Untitled

    Abstract: No abstract text available
    Text: APT60M60JFLL 600V 70A 0.060Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT60M60JFLL OT-227

    65C7019

    Abstract: IPW65R019C7
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPW65R019C7 DataSheet Rev.2.1 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPW65R019C7 1Description TO-247


    Original     		PDF 650VCoolMOSTMC7PowerTransistor IPW65R019C7 IPW65R019C7 O-247 65C7019

    Untitled

    Abstract: No abstract text available
    Text: STE70NM50 N-CHANNEL 500V - 0.045Ω - 70A ISOTOP Zener-Protected MDmesh Power MOSFET TARGET DATA TYPE STE70NM50 • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 500V < 0.05Ω 60 A TYPICAL RDS(on) = 0.045Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED


    Original     		PDF STE70NM50

    65C7019

    Abstract: IPZ65R019 PG-TO247-4 ipz65r019c7 smd mosfet 400v
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPZ65R019C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPZ65R019C7 1Description PG-TO247-4


    Original     		PDF 650VCoolMOSTMC7PowerTransistor IPZ65R019C7 IPZ65R019C7 PG-TO247-4 65C7019 IPZ65R019 PG-TO247-4 smd mosfet 400v

    Untitled

    Abstract: No abstract text available
    Text: STE70NM50 N-CHANNEL 500V - 0.045Ω - 70A ISOTOP Zener-Protected MDmesh Power MOSFET PRELIMINARY DATA TYPE STE70NM50 n n n n n n n VDSS RDS on ID 500V < 0.05Ω 70 A TYPICAL RDS(on) = 0.045Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY


    Original     		PDF STE70NM50

    PDM1405HA

    Abstract: No abstract text available
    Text: MOSFET MODULE PDM1405HA Dual 140A /500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Cascaded Circuit * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible


    Original     		PDF PDM1405HA /500V 300KHz 142i/W PDM1405HA

    transistor A2

    Abstract: RURH3060CC RURH3040CC RURH3050CC
    Text: RURH3040CC, RURH3050CC, RURH3060CC S E M I C O N D U C T O R 30A, 400V - 600V Ultrafast Dual Diodes April 1995 Features Package • Ultrafast with Soft Recovery Characteristic tRR < 55ns JEDEC TO-218AC ANODE1 CATHODE ANODE2 • +175oC Rated Junction Temperature


    Original     		PDF RURH3040CC, RURH3050CC, RURH3060CC O-218AC 175oC RURH3060CC transistor A2 RURH3040CC RURH3050CC

    PDM1405HA

    Abstract: No abstract text available
    Text: MOSFET 140A 500V PDM1405HA PDM1405HA 質量 Approximate Weight :460g •最大定格 Maximum Ratings 項 目 Rating ドレイン・ソース間電圧 VDSS Drain-Source Voltage ゲート・ソース間電圧 Gate-Source Voltage ドレイン電流（連続）


    Original     		PDF PDM1405HA 142/W PDM1405HA

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MODULE PD10M441L / PD10M440L Dual 70A 450V/500V OUTLINE DRAWING FEATURES * Dual MOS FETs Cascaded Circuit Dimension mm 108.0 * Low On-Resistance and Switching Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating


    Original     		PDF 50V/500V PD10M441L PD10M440L PD10M441L 150MAX -441L -440L

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MODULE P2H10M441L / P2H10M440L Dual 70A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Low On-Resistance and Switching Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating


    Original     		PDF 50V/500V P2H10M441L P2H10M440L P2H10M441L 150iMAX 25i/W -441L -440L

    P2H10M440L

    Abstract: 440L PD10M440L PD10M441L
    Text: MOSFET MODULE PD10M441L / PD10M440L Dual 70A 450V/500V OUTLINE DRAWING FEATURES * Dual MOS FETs Cascaded Circuit Dimension mm 108.0 * Low On-Resistance and Switching Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating


    Original     		PDF PD10M441L PD10M440L 50V/500V PD10M441L 150MAX P2H10M440L 440L PD10M440L

    PDM1405H

    Abstract: No abstract text available
    Text: MOSFET 140A 500 V PDM1405HA •回路図 CIRCUIT ■外形寸法図 OUTLINE DRAWING PD PDM1405HA （単位 Dimension：mm） Rg MOS SBD 1 D2S1 G2 S2 FRD 2 (S2) 3 SBD (D1) MOS FRD S1 G1 Rg 質量 Approximate Weight：460g ■最大定格 Maximum Rating


    Original     		PDF PDM1405HA Weight460g Duty50 PDM1405HA 140TC25 100TC25 280TC25 880TC25 06kgf PDM1405H

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MODULE P2H10M441L / P2H10M440L Dual 70A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Low On-Resistance and Switching 108.0 Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating


    Original     		PDF 50V/500V P2H10M441L P2H10M440L P2H10M441L 150MAX -441L -440L

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MODULE P2H10M441L / P2H10M440L Dual 70A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Low On-Resistance and Switching 108.0 Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating


    Original     		PDF 50V/500V P2H10M441L P2H10M440L P2H10M441L

    Untitled

    Abstract: No abstract text available
    Text: PD - 91686 IRG4PSH71UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4PSH71UD 40kHz 200kHz Super-247 O-247

    IRG4PSH71UD

    Abstract: IRG4P IRF 547 MOSFET IRFPS37N50A MOSFET 1000V 140A TO274
    Text: PD - 91686 IRG4PSH71UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4PSH71UD 40kHz 200kHz Super-247 O-247 IRG4PSH71UD IRG4P IRF 547 MOSFET IRFPS37N50A MOSFET 1000V 140A TO274

    P2H10M440L

    Abstract: P2H10M441L PD10M440L PD10M441L
    Text: MOSFET 70A 450～ 450～500V PD10M441L/440L PD10M441L PD10M440L P2H10M441L P2H10M440L P2H10M441L/440L 108.0 108.0 質量 Approximate Weight :220g 質量 Approximate Weight :220g •最大定格 Maximum Ratings 項 目 Rating ドレイン・ソース間電圧


    Original     		PDF 50500V PD10M441L/440L PD10M441L PD10M440L P2H10M441L P2H10M440L P2H10M441L/440L PD10M441L/P2H10M441L PD10M440L/P2H10M440L 25i/W P2H10M440L PD10M440L PD10M441L

    Untitled

    Abstract: No abstract text available
    Text: MOSFET 70A 450~500 V PD10M441L PD10M440L P2H10M441L P2H10M440L •回路図 CIRCUIT PD P2H Rg Rg G2 S2 MOS 1 D2S1 2 3 D1 S2 G2 S2 MOS S2 D1 D2 S1 MOS MOS S1 G1 S1 G1 Rg Rg ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm） PD10M441L440L


    Original     		PDF PD10M441L PD10M440L P2H10M441L P2H10M440L PD10M441L440L P2H10M441L440L Weight220g Duty50 PD10M441L/P2H10M441L

    "clip bonding"

    Abstract: 4 CCFL Lamps Inverter 8 CCFL Lamps Inverter circuit ATPAK mosfet h bridge inverter 40w inverter circuit CCFL 2 CCFL Lamps Inverter CCFL inverter 32 ATP206
    Text: T OP I C S Promotional Product Topics Thin-type large-current Power MOSFET Halogen-free 「ATPAK Series 」 New Package By applying Sanyo’s unique Clip Bonding Tech, the new ATPAK series realized 100A rated current, which is the largest among the same class.


    Original     		PDF O-252) MOSFETATPAK20X "clip bonding" 4 CCFL Lamps Inverter 8 CCFL Lamps Inverter circuit ATPAK mosfet h bridge inverter 40w inverter circuit CCFL 2 CCFL Lamps Inverter CCFL inverter 32 ATP206

    diode s40a

    Abstract: No abstract text available
    Text: MOSFET 70A 450～ 450～500V PD10M441L/440L PD10M441L PD10M440L P2H10M441L P2H10M440L P2H10M441L/440L 質量 Approximate Weight :220g 質量 Approximate Weight :220g •最大定格 Maximum Ratings 項 目 Rating ドレイン・ソース間電圧 VDSS Drain-Source Voltage


    Original     		PDF 50500V PD10M441L/440L PD10M441L PD10M440L P2H10M441L P2H10M440L P2H10M441L/440L PD10M441L/P2H10M441L PD10M440L/P2H10M440L diode s40a

    Untitled

    Abstract: No abstract text available
    Text: MOSFET 70A 450～ 450～500V PD10M441L/440L PD10M441L PD10M440L P2H10M441L P2H10M440L P2H10M441L/440L 108.0 108.0 質量 Approximate Weight :220g 質量 Approximate Weight :220g •最大定格 Maximum Ratings 項 目 Rating ドレイン・ソース間電圧


    Original     		PDF 50500V PD10M441L/440L PD10M441L PD10M440L P2H10M441L P2H10M440L P2H10M441L/440L PD10M441L/P2H10M441L PD10M440L/P2H10M440L