vrrm 400v if 20A ultra fast recovery diode
Abstract: 400v 20A ultra fast recovery diode
Text: FFA20U40DN FFA20U40DN Features • Ultrafast with soft recovery • Low forward voltage Applications • • • • Power switching circuits Output rectifiers Freewheeling diodes Switching mode power supply TO-3P 1 2 3 1. Anode 2.Cathode 3. Anode ULTRA FAST RECOVERY POWER RECTIFIER
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FFA20U40DN
vrrm 400v if 20A ultra fast recovery diode
400v 20A ultra fast recovery diode
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FFPF20U40S
Abstract: No abstract text available
Text: FFPF20U40S FFPF20U40S Features • Ultrafast with soft recovery • Low forward voltage Applications • • • • Power switching circuits Output rectifiers Freewheeling diodes Switching mode power supply TO-220F 1 2 1. Cathode 2. Anode ULTRA FAST RECOVERY RECTIFIER
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FFPF20U40S
O-220F
FFPF20U40S
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SMPS CIRCUIT DIAGRAM 5V 20A
Abstract: 400v 20A ultra fast recovery diode 20MT120UF diode 10a 400v
Text: I27124 rev. D 02/03 5/ 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery
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I27124
20MT120UF
E78996)
20KHz
SMPS CIRCUIT DIAGRAM 5V 20A
400v 20A ultra fast recovery diode
20MT120UF
diode 10a 400v
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Untitled
Abstract: No abstract text available
Text: 5/13/02 5/ Bulletin I27124 rev. A 05/02 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with
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I27124
20MT120UF
E78996)
20KHz
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ultrafast diode 10a 400v
Abstract: X 0238 CE
Text: 5/13/02 Bulletin I27124 rev. B 10/02 5/ 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with
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I27124
20MT120UF
E78996)
20KHz
ultrafast diode 10a 400v
X 0238 CE
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Untitled
Abstract: No abstract text available
Text: 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery
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20MT120UF
E78996)
20KHz
08-Mar-07
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ir igbt 1200V 40A
Abstract: 20MT120UF E78996 bridge
Text: 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery
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20MT120UF
E78996)
20KHz
12-Mar-07
ir igbt 1200V 40A
20MT120UF
E78996 bridge
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10a 400V ultra fast diode d2pak
Abstract: IRGS4064DPBF IRGS4064 ultrafast diode 10a 400v igbt 600V
Text: PD - 96424 IRGS4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • IC = 10A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C
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IRGS4064DPbF
EIA-418.
10a 400V ultra fast diode d2pak
IRGS4064DPBF
IRGS4064
ultrafast diode 10a 400v
igbt 600V
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Untitled
Abstract: No abstract text available
Text: PD - 96424 IRGS4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • IC = 10A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C
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IRGS4064DPbF
EIA-418.
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diode 10a 400v
Abstract: ultrafast diode 10a 400v 600v 10A ultra fast recovery diode IRF1010 IRGB4064DPBF
Text: PD - 97113 IRGB4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA
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IRGB4064DPbF
O-220AB
diode 10a 400v
ultrafast diode 10a 400v
600v 10A ultra fast recovery diode
IRF1010
IRGB4064DPBF
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IRF1010
Abstract: ultrafast diode 10a 400v
Text: PD - 97113 IRGB4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA
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IRGB4064DPbF
IRF1010
O-220AB
IRF1010
ultrafast diode 10a 400v
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Untitled
Abstract: No abstract text available
Text: PD - 97113 IRGB4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA
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IRGB4064DPbF
O-220AB
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Untitled
Abstract: No abstract text available
Text: AUIRGP65G40D0 AUIRGF65G40D0 AUTOMOTIVE GRADE ULTRAFAST IGBT WITH ULTRAFAST SOFT RECOVERY DIODE CooliRIGBT Features • • • • • • • Designed And Qualified for Automotive Applications Ultra Fast Switching IGBT:70-200kHz Extremely Low Switching Losses
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AUIRGP65G40D0
AUIRGF65G40D0
70-200kHz
O-247AD
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400v 20A ultra fast recovery diode
Abstract: APT38F80B2 APT38F80L MIC4452
Text: APT38F80B2 APT38F80L 800V, 38A, 0.28Ω Max, trr ≤300ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT38F80B2
APT38F80L
300ns
O-247
400v 20A ultra fast recovery diode
APT38F80B2
APT38F80L
MIC4452
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APT38F80B2
Abstract: APT38F80L MIC4452
Text: APT38F80B2 APT38F80L 800V, 41A, 0.24Ω Max, trr ≤300ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT38F80B2
APT38F80L
300ns
O-264
APT38F80
O-247
APT38F80B2
APT38F80L
MIC4452
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APT38F80B2
Abstract: APT38F80L MIC4452
Text: APT38F80B2 APT38F80L 800V, 38A, 0.28Ω Max, trr ≤300ns N-Channel FREDFET T-Max Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT38F80B2
APT38F80L
300ns
O-247
APT38F80B2
APT38F80L
MIC4452
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IC 7403
Abstract: igbt 400V 40A 40gp60b2
Text: APT40GP60B 600V Mos 7 Ultra Fast IGBT The Mos 7 Ultra Fast IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT40GP60B
O-247
IC 7403
igbt 400V 40A
40gp60b2
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IC 7410
Abstract: 10A IGBT driver IC igbt 400V 40A
Text: APT40GP60J 600V Mos 7 Ultra Fast IGBT E E The Mos 7 Ultra Fast IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT40GP60J
IC 7410
10A IGBT driver IC
igbt 400V 40A
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Untitled
Abstract: No abstract text available
Text: APT40GP60J 600V Mos 7 Ultra Fast IGBT E E The Mos 7 Ultra Fast IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT40GP60J
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CTG-22S
Abstract: CTG-34S CTG-32S CTG-33S CTG23S smew CTG-11S CTG-12R CTG-12S CTG-14R
Text: SANKEN ELECTRIC C« LTH iS 3SE B Ultra Fast Recovery Diodes _ 7 ^ _ S A K J T~Zt~07 7 ^ 0 7 4 1 GODGfll? b V r m:70~ 400V e i o : 5.0~ 20A BESSES CTG V rm V CTG-12S CTG-12R CTG-14S CTG-14R CTG-21S CTG-21R CTG-22S CTG-22R CTG-23S CTG-23R CTG-24S CTG-24R CTG-31S
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tj-140
CTG-11S
CTG-11
CTG-12S
CTG-12R
CTG-14S
CTG-14R
CTG-21S
MI-10/15
SFPB-64
CTG-22S
CTG-34S
CTG-32S
CTG-33S
CTG23S
smew
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400v 20A ultra fast recovery diode
Abstract: 400v 50A DIODE BYV54V50 BYV72E100/150/200 power Diode 200V 10A BYV72E-100 DIODE SMD 10A sod 81 50V 200A ultra fast diode 600v 2A ultra fast recovery diode
Text: Power Devices Ultra Fast Recovery Epitaxial Rectifiers in o rd e r o f cu rre n t rating (cont.) Package Outline Average Forward Current Repetitive Peak Reverse Voltage NonRepetitive Reverse Avalanche Energy Surge (NonRepetitive) Forward Current ’ f |A V | m ax.(1)
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BYV72E-100
BYV44-300*
BYV74-300*
BYT230PIV-200<
BYV54V-50*
OT-93
O-220AB
BYD31D
BYD43-20
BYV98
400v 20A ultra fast recovery diode
400v 50A DIODE
BYV54V50
BYV72E100/150/200
power Diode 200V 10A
DIODE SMD 10A
sod 81
50V 200A ultra fast diode
600v 2A ultra fast recovery diode
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10C2
Abstract: ULTRA FAST diode 400v 5a vrrm 400v if 20A ultra fast recovery diode 5GUZ47 markT2
Text: TOSHIBA 5GUZ47 TOSHIBA SUPER FAST RECOVERY DIODE SILICON EPITAXIAL TYPE 5GUZ47 Unit in mm SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION 43.2 ± 0.2 10.3MAX. • Repetitive Peak Reverse Voltage V = 400V • Average Output Rectified Current I0 = 5A
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5GUZ47
100ns
961001EAA2'
10C2
ULTRA FAST diode 400v 5a
vrrm 400v if 20A ultra fast recovery diode
5GUZ47
markT2
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L38C
Abstract: MES1104 MES1106 MES1105 Fast Recovery Rectifier, 300V
Text: MES1104 MES1105 MES1106 Microsemi Corp. The diode experts S A N T A A N A , CA Ultra Fast Switching Rectifier For more information call: 714 979-8220 FEATURES • M ICROM INIATU RE PACKAGE • VOIDLESS HERMETICALLY SEALED G LA SS PACKAGE • TRIPLE LAYER PASSIVATION
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MES1104
MES1105
MES1106
MES1101
MES1103
L38C
Fast Recovery Rectifier, 300V
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 5GUZ47 TOSHIBA SUPER FAST RECOVERY DIODE SILICON EPITAXIAL TYPE s r ; I J 7 A 7m wmr SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • § • • Repetitive Peak Reverse Voltage : Vr r m = 400V Average Output Rsctiiisd Currsnt ’ I q —5A
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5GUZ47
100ns
961001EAA2'
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