400MHZ 10 W TRANSISTOR Search Results

400MHZ 10 W TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

400MHZ 10 W TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MRF321 Contextual Info: MRF321 The RF Line NPN Silicon Power Transistor 10W, 400MHz, 28V Designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range. • • • • Guaranteed performance at 400 MHz, 28 Vdc Output power = 10 W	Original	MRF321 400MHz, MRF321	PDF
OF TRANSISTOR 2N5485 Abstract: 2N5486 Transistor 2N5485 DATASHEET OF TRANSISTOR 2N5485 2N5484 2N5486 Contextual Info: Datasheet 2N5484 THRU 2N5486 Central Sem iconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 N CHANNEL JUNCTION F IE L D EFFECT TRANSISTOR JEDEC TO-92 CASE Manufacturers of World Class Discrete Semiconductors	OCR Scan	2N5484 2N5486 100MHz 400MHz 400MHz OF TRANSISTOR 2N5485 2N5486 Transistor 2N5485 DATASHEET OF TRANSISTOR 2N5485 2N5486	PDF
mce544 Abstract: bfr96 equivalent MC3042 Bipolar Transistor y 200Mhz MRF237 / SD1127 MC1343 MCE545 transistor 5ghz pnp MC1309 MRF630 Contextual Info: MC3042 WAFFLE PACK DIE RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MC3042 is a high gain, discrete silicon bipolar transistor, shipped in waffle pack. ! 1Watt Output Power @ 400MHz ! Gold Back Metal IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com	Original	MC3042 400MHz SD1127/MRF237 MS1649/MRF630 MRF837/MRF8372 MRF559 400mA 200mA mce544 bfr96 equivalent Bipolar Transistor y 200Mhz MRF237 / SD1127 MC1343 MCE545 transistor 5ghz pnp MC1309 MRF630	PDF
2N3632 Abstract: 2N3375 2N3373 Contextual Info: , LJnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N3375 2N3632/2N3733 RF & MICROWAVE TRANSISTORS VHF-UHF CLASS C WIDE BAND 130 TO 400MHz FREQUENCY 28V VOLTAGE 2.5TO13.5W POWER OUT HIGH POWER GAIN	Original	2N3375 2N3632/2N3733 400MHz 5TO13 2N3373 2N3632 2N3733 -200mA Vca-30V 250mA 2N3632 2N3375 2N3373	PDF
Contextual Info: , L nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973) 376-2922 (212)227-6005 FAX: (973) 376-8960 SD1462 RF & MICROWAVE TRANSISTORS WIDEBAND VHF-UHF CLASS C CLASS C TRANSISTOR FREQUENCY 400MHz VOLTAGE 28V POWER OUT 70W POLWER GAIN 9.00B	Original	SD1462 400MHz S006LF VUU-30V	PDF
2N3866A Abstract: Transistor 2N3866 2N3866 RF 2N3866 15-September Contextual Info: 2N3866 2N3866A NPN SILICON HIGH FREQUENCY TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3866 and 2N3866A are Silicon NPN RF Transistors, mounted in a hermetically sealed package, designed for high frequency amplifier and oscillator applications.	Original	2N3866 2N3866A 2N3866 2N3866A Ju20mA 2N3866) 2N3866A) 360mA 200MHz Transistor 2N3866 RF 2N3866 15-September	PDF
Contextual Info: MS1642P RF & MICROWAVE TRANSISTORS VHF, UHF GENERAL PURPOSE Features • • • • • • 400 MHz GOLD METALLIZATION POUT = 10 W MINIMUM GP = 12 dB MINIMUM INFINITE VSWR CAPABILITY COMMON EMITTER CONFIGURATION The MS1642 is a gold metallized silicon NPN transistor	Original	MS1642P MS1642 400MHz	PDF
uhf vhf amplifier Abstract: MS1642P Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1642P RF & MICROWAVE TRANSISTORS VHF, UHF GENERAL PURPOSE Features • • • • • • 400 MHz GOLD METALLIZATION POUT = 10 W MINIMUM GP = 12 dB MINIMUM INFINITE VSWR CAPABILITY	Original	MS1642P MS1642 400MHz uhf vhf amplifier MS1642P	PDF
M113 Abstract: SD2904 Contextual Info: SD2904 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS . . . PRELIMINARY DATA 2 - 500 MHz 30 WATTS 28 VOLTS 10 dB MIN. AT 400 MHz CLASS A OR AB .380 4LFL M113 ORDER CODE SD2904 DESCRIPTION The SD2904 is a gold metallized N-channel MOS field effect RF power transistor. The SD2904 is	Original	SD2904 SD2904 M113	PDF
J5486 Abstract: fmmj5484 Contextual Info: FMMJ5484 to FMMJ5486 SOT23 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS PARTMARKING DETAILS: FM M J5484 - H84 FM M J5485 - H85 FM M J5486 - H86 APPLICATION AREAS: * VHF/UHF AMPLIFIERS ABSOLUTE MAXIMUM RATINGS at Tamb= 2 5°C -2 5 V Gate Drain or G ate-S ource V oltag e Notes	OCR Scan	J5484 J5485 J5486 FMMJ5484 FMMJ5486 400MHz 15Vdc,	PDF
2N3632 Abstract: 2N3375 2N3733 transistor 2N3 SD1050 SD1075 SD1070 n3733 Contextual Info: *Lp L°2!£s ; MaEcmsem • f r if U lP rol gA 7 ^ f lll re s s P o w e re d b y T ec h no log y 140 Commerce Drive O Kl Q Q 7 C Montgomeryvme, PA 1893 ä H O O /O Tel: 215 631 9840 2 N 3 6 3 2 /2 N 3 7 3 3 RF & MICROWAVE TRANSISTORS VHF-UHF CLASS C WIDE BAND	OCR Scan	2N3375 N3632/2 N3733 130T0 400MHZ SD1050 2N3632 SD1075 2N3733 2N3632 2N3375 2N3733 transistor 2N3 SD1070 n3733	PDF
MS1642 Abstract: MS1642P rf power amplifier 400MHz Contextual Info: MS1642P RF & MICROWAVE TRANSISTORS VHF, UHF GENERAL PURPOSE Features • • • • • • 400 MHz GOLD METALLIZATION POUT = 10 W MINIMUM GP = 12 dB MINIMUM INFINITE VSWR CAPABILITY COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1642 is a gold metallized silicon NPN transistor	Original	MS1642P MS1642 400MHz MS1642P rf power amplifier 400MHz	PDF
microstrip line Abstract: 400 watt hf mosfet transistor z4 n vk200 VK200-19/4B MS4000 Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS4000 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Features • • • • • 2 - 400 MHz 4 WATTS 28 VOLTS 14 dB MIN. AT 400 MHz CLASS A OR AB DESCRIPTION:	Original	MS4000 MS4000 VK200-19/4B MSC0877 microstrip line 400 watt hf mosfet transistor z4 n vk200 VK200-19/4B	PDF
Contextual Info: TSD2900 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to	Original	TSD2900 TSD2900	PDF

SD2900 Abstract: M113 Contextual Info: SD2900 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS . . . PRELIMINARY DATA 2 - 500 MHz 5 WATTS 28 VOLTS 13.5 dB MIN AT 400 MHz CLASS B OR AB .380 4LFL M113 ORDER CODE SD2900 DESCRIPTION The SD2900 is a gold metallized N-channel MOS field effect RF power transistor. The SD2900 is	Original	SD2900 SD2900 M113	PDF
b711 Abstract: SD1468 M111 400mhz 10 w transistor RTN 980 Contextual Info: H M /Irl/Cf r» f ! / / P ro g re s s P o w e re d b y T ec h no log y 140 Commerce Drive •wivsi i i u w i i i ceryville, i y v i n e , rPA n i u j ü u - iu io M ontgom 18936-1013 Tel: 215 631-9840 A a A SD1468 RF AND MICROWAVE TRANSISTORS WIDE BAND UHF-VHF CLASS C	OCR Scan	oD1400 400MHz SD1468 200-500MHz s88sr> 225MHz SD1468 b711 M111 400mhz 10 w transistor RTN 980	PDF
MRF323 Contextual Info: MRF323 The RF Line NPN Silicon Power Transistor 20W, 400MHz, 28V M/A-COM Products Released - Rev. 07.07 Designed primarily for wideband large–signal driver and predriver amplifier stages in the 200–500 MHz frequency range. • • • • Product Image	Original	MRF323 400MHz, MRF323	PDF
Contextual Info: • m m RF Products m Micmsemi Progress Powered by Technology 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS F e a tu ie s 2 - 400 MHz 4 WATTS 28 VOLTS 14 dB MIN. AT 400 MHz	OCR Scan	MS4000 VK200-19/4B MSC0877	PDF
Contextual Info: Part Number: Integra IDM500CW200 TECHNOLOGIES, INC. UHF-Band RF Power MOSFET Silicon MOSFET − High Power Gain − Superior thermal stability The high power transistor part number IDM500CW200 is designed for VHF/UHF-Band systems operating at 1-500 MHz. Operating at CW	Original	IDM500CW200 IDM500CW200 2x100mA IDM500CW200-REV-NC-DS-REV-C	PDF
Contextual Info: Part Number: Integra IDM500CW300 TECHNOLOGIES, INC. UHF-Band RF Power MOSFET Silicon MOSFET − High Power Gain − Superior thermal stability The high power transistor part number IDM500CW300 is designed for VHF/UHF-Band systems operating at 1-500 MHz. Operating at CW	Original	IDM500CW300 IDM500CW300 2x100mA IDM500CW300-REV-NC-DS-REV-NC	PDF
Contextual Info: Part Number: Integra IDM30512CW100 TECHNOLOGIES, INC. Broadband RF Power MOSFET Silicon MOSFET  High Power Gain  Superior thermal stability The high power transistor part number IDM30512CW100 is designed for VHF/UHF-Band systems operating over the frequency band 30-512	Original	IDM30512CW100 IDM30512CW100 30-512MHz 400MHz. 2x100mA IDM30512CW100-REV-NC-DS-REV-B	PDF
Contextual Info: Part Number: Integra IDM30512CW50 TECHNOLOGIES, INC. Broadband RF Power MOSFET Silicon MOSFET − High Power Gain − Superior thermal stability The high power transistor part number IDM30512CW50 is designed for VHF/UHF-Band systems operating over the frequency band 30-512 MHz under CW conditions. Over the	Original	IDM30512CW50 IDM30512CW50 30-512MHz 400MHz. 2x100mA IDM30512CW50-REV-NC-DS-REV-NC	PDF
2SC5531 Abstract: 2SC553 Contextual Info: 2SC 553 ^ _ SILICON NPN EPITAXIAL PLANAR TRANSISTOR ü mX m m INDUSTRIAL APPLICATIONS U nit O VHF « • * * * V H F Power Ampli t i e r A p p l i c a t i o n « 400MHz r a t>îo w * / jv ) mcytifì-o ( P i n = 4W . Vc c = 260MHS! T ffi fs 88 V )	OCR Scan	400MHz 260MHS! 2sc553 200mA 500mA 150mA 250mA 200MHz 2SC5531 2SC553	PDF
Contextual Info: < Silicon RF Power MOS FET Discrete > RD02LUS2 RoHS Compliance, Silicon MOSFET Power Transistor 470MHz,2W OUTLINE DRAWING DESCRIPTION RD02LUS2 is a MOS FET type transistor specifically 4.4 +/-0.1 designed for VHF/UHF RF amplifiers applications. T YPE N AM E	Original	RD02LUS2 470MHz RD02LUS2 15dBTyp 470MHz 18dBTyp	PDF

400MHZ 10 W TRANSISTOR Search Results

400MHZ 10 W TRANSISTOR Result Highlights (5)

400MHZ 10 W TRANSISTOR Datasheets Context Search

MRF321

OF TRANSISTOR 2N5485

mce544

2N3632

2N3866A

uhf vhf amplifier

M113

J5486

2N3632

MS1642

microstrip line

SD2900

b711

MRF323

2SC5531