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    4000W POWER AMPLIFIER Search Results

    4000W POWER AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    4000W POWER AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1200w power amplifier circuit diagram

    Abstract: 2000w power amplifier circuit diagram 2000w power amplifier diagram 1200w amplifier 4000w power amplifier dps1200 project power amplifier 1000W with two channel 48v 30a 1600w 1200w power amplifier 12v 30a 4000w
    Text: End-to-End Embedded Power Solutions 2010 Product Selection Guide End-to-End Power Solutions Front Ends & Rectifiers Hybrid Architecture: ≈81% overall efficiency STRENGTHS: WEAKNESSES: 48 OR 24V RECTIFICATION • Large installed base • di/dt of isolated bricks less than POLs


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    4000w power amplifier

    Abstract: antenna mtbf IEC-801-5 Surge protect surge protection mtbf 300w power amplifier circuit diagram mtbf antenna FILTRONIC COMTEK 4000w Filtronic BTS and antenna installation
    Text: CY156 DC Inserter / Bias Tee FEATURES • Extremely low loss BLOCK DIAGRAM MOLEX - 5566 • Extremely high return loss +12V DC GND • High DC current handling • Integrated surge protection To BTS DIN 7-16 M To Antenna DIN 7-16 (F) RF RF + DC • High MTBF


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    PDF CY156 CY156 CA484 4000w power amplifier antenna mtbf IEC-801-5 Surge protect surge protection mtbf 300w power amplifier circuit diagram mtbf antenna FILTRONIC COMTEK 4000w Filtronic BTS and antenna installation

    Untitled

    Abstract: No abstract text available
    Text: X-Band Rack-mount SSPA 500W to 600W ARMA-4000X series                               


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    PDF ARMA-4000Xï PB-ARMA-X-500-600-12106

    FHX04

    Abstract: FHX04X FHX05X FHX06X hemt low noise die
    Text: FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) High Associated Gain: 10.5dB (Typ.)@f=12GHz Lg ² 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX04X, FHX05X, FHX06X are High Electron Mobility


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    PDF FHX04X, FHX05X, FHX06X 12GHz FHX04) FHX06X 2-18GHz FHX04 FHX04X FHX05X hemt low noise die

    Untitled

    Abstract: No abstract text available
    Text: Ku-Band Hub-mount SSPA 300W to 500W AWMA-5000KTM series Features •          Remote Monitor & Control High gain and linearity Output power of 500W see table A Gain adjustment Output sample monitor port Temperature gain compensation


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    PDF AWMA-5000KTM AWMA-5000K S3102E20-19P PB-AWMA-Ku-300-500-13150

    4000w power amplifier

    Abstract: filtronic band-pass GSM BTS antenna BTS antenna installation FILTRONIC gsm tma tma umts TMA dual band bts gsm rx unit mtbf dual transceiver CA968F1V3
    Text: CA968F1V3 PCS1900/TDMA/CDMA Dual Duplexed, Full Band, Single TMA FEATURES • Small, low weight • Dual duplexed • High linearity • Lightning protected • High reliability • Available as RoHS compliant Inspired Wireless Solutions BENEFITS • Reduction in roll out costs


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    PDF CA968F1V3 PCS1900/TDMA/CDMA CA968 1900MHz 4000w power amplifier filtronic band-pass GSM BTS antenna BTS antenna installation FILTRONIC gsm tma tma umts TMA dual band bts gsm rx unit mtbf dual transceiver CA968F1V3

    1000w power amplifier

    Abstract: No abstract text available
    Text: C-Band Hub-mount SSPA 500W to 1000W AWMA-6000CTM series Features •          Remote Monitor & Control High gain and linearity Output power up to 1000W see table A Gain adjustment Output sample monitor port Temperature gain compensation


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    PDF AWMA-6000CTM AWMA-6000Cï PB-AWMA-C-500-1000-13150 1000w power amplifier

    POWER AMPLIFIER CIRCUIT DIAGRAM 4000W

    Abstract: 4000w power amplifier piezo charge amplifier MO-127 SA14 flyback 150w
    Text: PULSE WIDTH MODULATION AMPLIFIER SA14 M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • • • • • • • HALF BRIDGE OUTPUT WIDE SUPPLY RANGE—16-200V 20A CONTINUOUS TO 85° C CASE 3 PROTECTION CIRCUITS


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    PDF 546-APEX RANGE--16-200V TE9493 SA14U POWER AMPLIFIER CIRCUIT DIAGRAM 4000W 4000w power amplifier piezo charge amplifier MO-127 SA14 flyback 150w

    POWER AMPLIFIER CIRCUIT DIAGRAM 4000W

    Abstract: 4000w power amplifier
    Text: PULSE WIDTH MODULATION AMPLIFIER SA14 M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • • • • • • • HALF BRIDGE OUTPUT WIDE SUPPLY RANGE—16-200V 20A CONTINUOUS TO 85° C CASE 3 PROTECTION CIRCUITS


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    PDF 546-APEX RANGE--16-200V TE9493 12-pin 45kHz SA14U POWER AMPLIFIER CIRCUIT DIAGRAM 4000W 4000w power amplifier

    transistor 1345

    Abstract: FHR02X FHX02X GaAs FET HEMT Chips
    Text: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ² 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX02X is a High Electron Mobility Transistor(HEMT)


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    PDF FHR02X 18GHz FHX02X 4-22GHz FCSI0598M200 transistor 1345 FHR02X GaAs FET HEMT Chips

    POWER AMPLIFIER CIRCUIT DIAGRAM 4000W

    Abstract: No abstract text available
    Text: PULSE WIDTH MODULATION AMPLIFIER SA14 M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • • • • • • • HALF BRIDGE OUTPUT WIDE SUPPLY RANGE—16-200V 20A CONTINUOUS TO 85° C CASE 3 PROTECTION CIRCUITS


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    PDF 546-APEX RANGE--16-200V TE9493 45kHz SA14U POWER AMPLIFIER CIRCUIT DIAGRAM 4000W

    hemt low noise die

    Abstract: No abstract text available
    Text: FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) High Associated Gain: 10.5dB (Typ.)@f=12GHz Lg ² 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX04X, FHX05X, FHX06X are High Electron Mobility


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    PDF FHX04X, FHX05X, FHX06X 12GHz FHX04) 12GHz FHX06X 2-18GHz hemt low noise die

    POWER AMPLIFIER CIRCUIT DIAGRAM 4000W

    Abstract: SA041
    Text: PULSE WIDTH MODULATION AMPLIFIER SA04 HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 FEATURES • • • • • • WIDE SUPPLY RANGE—16-200V 20A CONTINUOUS TO 85° C CASE 3 PROTECTION CIRCUITS ANALOG OR DIGITAL INPUTS


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    PDF 546-APEX RANGE--16-200V TE9493 45kHz SA04U POWER AMPLIFIER CIRCUIT DIAGRAM 4000W SA041

    Untitled

    Abstract: No abstract text available
    Text: Ku-Band Transceiver 300W to 500W AWMT-5000K series Features •               Operating Ku-Band Tx: 14.00 - 14.50 GHz 13.75 - 14.50 GHz optional Rx: 10.95 - 12.75 GHz 70 or 140 MHz Tx and Rx interface Easy to install and operate


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    PDF AWMT-5000Kï RS-232/RS-485) 10MHz C/300m) MS3102R20-19P PB-AWMT5000-K-300-500-13150

    FHR02FH

    Abstract: transistor hemt Low Noise HEMT
    Text: FHR02FH Super Low Noise HEMT FEATURES • • • • • Low Noise Figure: 1.2B Typ. @f=18GHz High Associated Gain: 8.5dB (Typ.)@f=18GHz Lg ² 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability Hermetically Sealed Package DESCRIPTION The FHR02FH is a High Electron Mobility Transistor(HEMT) intended for


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    PDF FHR02FH 18GHz FHR02FH 4-22GHz FCSI0598M200 transistor hemt Low Noise HEMT

    high frequency transistor ga as fet

    Abstract: GaAs FET HEMT Chips fujitsu hemt
    Text: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB Typ. @f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg ² 0.25µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain Gate Gate DESCRIPTION The FHX35X is a High Electron Mobility Transistor(HEMT) intended


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    PDF FHX35X 12GHz FHX35X 2-18GHz FCSI0598M200 high frequency transistor ga as fet GaAs FET HEMT Chips fujitsu hemt

    Untitled

    Abstract: No abstract text available
    Text: PULSE WIDTH MODULATION AMPLIFIER SA04 HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 FEATURES • • • • • • WIDE SUPPLY RANGE—16-200V 20A CONTINUOUS TO 85° C CASE 3 PROTECTION CIRCUITS ANALOG OR DIGITAL INPUTS


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    PDF 546-APEX 6-200V TE9493 12-pin 45kHz SA04U

    POWER AMPLIFIER CIRCUIT DIAGRAM 4000W

    Abstract: 4000w power amplifier circuit diagram
    Text: PULSE WIDTH MODULATION AMPLIFIER SA04 M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • • • • • • WIDE SUPPLY RANGE—16-200V 20A CONTINUOUS TO 85° C CASE 3 PROTECTION CIRCUITS ANALOG OR DIGITAL INPUTS


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    PDF 546-APEX RANGE--16-200V TE9493 45kHz SA04U POWER AMPLIFIER CIRCUIT DIAGRAM 4000W 4000w power amplifier circuit diagram

    fujitsu hemt

    Abstract: No abstract text available
    Text: FHX04LG/LP, 05LG/LP, 06LG/LP Super Low Noise HEMT FEATURES • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) • High Associated Gain: 10.5dB (Typ.)@f=12GHz • Lg ² 0.25µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


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    PDF FHX04LG/LP, 05LG/LP, 06LG/LP 12GHz FHX04) FHX05LG/LP, FHX06LG/LP 2-18GHz fujitsu hemt

    Untitled

    Abstract: No abstract text available
    Text: FHX45X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.55dB Typ. @f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg ² 0.15µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain DESCRIPTION Gate The FHX45X is a Super High Electron Mobility Transistor


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    PDF FHX45X 12GHz FHX45X 2-18GHz FCSI0598M200

    Low Noise HEMT

    Abstract: Super low noise figure and high associated gain
    Text: FHC40LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg ² 0.15µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


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    PDF FHC40LG FH40LG 2-12GHz FCSI0598M200 Low Noise HEMT Super low noise figure and high associated gain

    300w power amplifier circuit diagram

    Abstract: POWER AMPLIFIER CIRCUIT DIAGRAM 4000W 4000w amplifier
    Text: PULSE WIDTH MODULATION AMPLIFIER SA04 HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 FEATURES • • • • • • WIDE SUPPLY RANGE—16-200V 20A CONTINUOUS TO 85° C CASE 3 PROTECTION CIRCUITS ANALOG OR DIGITAL INPUTS


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    PDF 546-APEX RANGE--16-200V TE9493 45kHz SA04U 300w power amplifier circuit diagram POWER AMPLIFIER CIRCUIT DIAGRAM 4000W 4000w amplifier

    POWER AMPLIFIER CIRCUIT DIAGRAM 4000W

    Abstract: No abstract text available
    Text: PULSE WIDTH MODULATION AMPLIFIER SA04 M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • • • • • • WIDE SUPPLY RANGE—16-200V 20A CONTINUOUS TO 85° C CASE 3 PROTECTION CIRCUITS ANALOG OR DIGITAL INPUTS


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    PDF 546-APEX RANGE--16-200V TE9493 45kHz SA04U POWER AMPLIFIER CIRCUIT DIAGRAM 4000W

    Untitled

    Abstract: No abstract text available
    Text: PU LSE WIDTH MODULATION AMPLIFIER APÉ* M l C R O Î E C M N O L O f i Y SA14 H T T P ^ / WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • • • • • • • HALF BRIDGE OUTPUT WIDE SUPPLY RANGE— 16-200V 20A CONTINUOUS TO 85° C CASE


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    PDF 546-APEX 6-200V 45kHz SA14U