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    4000 NPN Search Results

    4000 NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SC5198 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation

    4000 NPN Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    LXR-0000-084

    Abstract: LRS-5050-103 LRK-5050-103 5050 led lichtschranke
    Text: Reflex sensor Wichtigste Eigenschaften: Caractéristiques principales: Main features: − Schaltabstand von 4000 mm − Portée de 4000 mm − Operating distance of 4000 mm – Hohe Schaltfrequenz: 1000 Hz − Fréquence de commutation élevée: 1000 Hz − High switching frequency of 1000 Hz


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    5050LR LXR-0000-084 LRS-5050-103 LRK-5050-103 5050 led lichtschranke PDF

    ic 4001

    Abstract: No abstract text available
    Text: PHASE LOCKED OSCILLATOR MODEL MDR6100-4000 4000 MHz Features ! ! ! ! Low Phase Noise: -122 dBc/Hz @ 100 kHz Low Spurious: -80 dBc Typical External Reference Environmental Screening Available Specifications1 CHARACTERISTIC Frequency (MHz)2 Mechanical Tuning


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    MDR6100-4000 20log ic 4001 PDF

    ic 4001

    Abstract: microwave alarm circuit
    Text: PHASE LOCKED OSCILLATOR MODEL MDR5100-4000 4000 MHz Features ! ! ! ! Low Phase Noise: -123 dBc/Hz @ 100 kHz Low Spurious: -80 dBc Typical Internal Reference Design Environmental Screening Available Specifications1 CHARACTERISTIC Frequency (MHz)2 Mechanical Tuning


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    MDR5100-4000 20log ic 4001 microwave alarm circuit PDF

    turck 8 pin m12 connector

    Abstract: OMRON RM201 marking code A1W SMC ex250 AN203 MATSUSHITA MATSUA compressor wiring diagram frc100a solenoid valve 24v JIS-X-5101 eb142
    Text: CAT.ES11-81 A 5 Port Solenoid Valve Series SV New Concept Connector Type Manifold Series Series SV1000/2000/3000/4000 SV1000/2000/3000/4000 The use of multi-pin connectors to replace wiring inside manifold blocks provides flexibility when adding stations or changing manifold configuration.


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    ES11-81 SV1000/2000/3000/4000 turck 8 pin m12 connector OMRON RM201 marking code A1W SMC ex250 AN203 MATSUSHITA MATSUA compressor wiring diagram frc100a solenoid valve 24v JIS-X-5101 eb142 PDF

    EEX500-IB1-E8

    Abstract: EX250 JIS-X-5101 connector 11 pin female lumberg EX500-IB1 GVVZS3000-21A-4 diode catalogue OMRON BF 302 VINCENT sv 236 EX120-SIB1
    Text: CAT.ES11-81 A -UK 5 Port Solenoid Valve Series SV New Concept Connector Type Manifold Series Series SV1000/2000/3000/4000 SV1000/2000/3000/4000 The use of multi-pin connectors to replace wiring inside manifold blocks provides flexibility when adding stations or changing manifold configuration.


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    ES11-81 SV1000/2000/3000/4000 EEX500-IB1-E8 EX250 JIS-X-5101 connector 11 pin female lumberg EX500-IB1 GVVZS3000-21A-4 diode catalogue OMRON BF 302 VINCENT sv 236 EX120-SIB1 PDF

    GVVZS3000-21A-2

    Abstract: VVQ2000-51A-C10 SS5V1-W16SA1WD-06B-C6 EX500-AC000-S diode catalogue AS3000 SS5V1-16 GVVZS3000-21A-4 IEC529 turck 8 pin m12 connector
    Text: 5 Port Solenoid Valve Series SV SV SY SYJ SX VK VZ VF VFR VP7 VQC SQ VQ VQ4 VQ5 VQZ VQD VFS VS VS7 VQ7 1.1-1 New Concept Connector Type Manifold Series Series SV1000/2000/3000/4000 SV1000/2000/3000/4000 The use of multi-pin connectors to replace wiring inside manifold blocks provides


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    SV1000/2000/3000/4000 30Vrms UL1310, UL1585 GVVZS3000-21A-2 VVQ2000-51A-C10 SS5V1-W16SA1WD-06B-C6 EX500-AC000-S diode catalogue AS3000 SS5V1-16 GVVZS3000-21A-4 IEC529 turck 8 pin m12 connector PDF

    2SB1126

    Abstract: No abstract text available
    Text: 2SB1126 / 2SD1626 2SB1126 / 2SD1626 Ordering number : EN1721B PNP / NPN Epitaxial Planar Silicon Transistors For Various Drivers Applications • Relay drivers, hammer drivers, lamp drivers, motor drivers. Features • • • High DC current gain 4000 or greater .


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    2SB1126 2SD1626 EN1721B 2SB1126 2SD1626/D PDF

    D1224

    Abstract: 2SD1224
    Text: 2SD1224 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (darlington) 2SD1224 Pulse Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)


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    2SD1224 D1224 2SD1224 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD1224 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (darlington) 2SD1224 Pulse Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)


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    2SD1224 PDF

    2SD1224

    Abstract: D1224
    Text: 2SD1224 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1224 Pulse Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)


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    2SD1224 2SD1224 D1224 PDF

    Untitled

    Abstract: No abstract text available
    Text: BC846BM3T5G, NSVBC846BM3T5G General Purpose Transistor NPN Silicon • Moisture Sensitivity Level: 1 • ESD Rating: Human Body Model: >4000 V http://onsemi.com Machine Model: >400 V • NSV Prefix for Automotive and Other Applications Requiring • COLLECTOR


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    BC846BM3T5G, NSVBC846BM3T5G BC846BM3/D PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD1224 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1224 Pulse Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)


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    2SD1224 PDF

    2SB1126

    Abstract: 2SD1626
    Text: Ordering number:1721A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1126/2SD1626 For Various Drivers Applications Package Dimensions • Relay drivers, hammer drivers, lamp drivers, motor drivers, unit:mm 2038 [2SB1126/2SD1626] Features · High DC current gain 4000 or greater .


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    2SB1126/2SD1626 2SB1126/2SD1626] 2SB1126 2SB1126 2SD1626 PDF

    MARKING 358 sot-23

    Abstract: marking code 359 sot-23 marking 1G SOT23 359 sot23 On semiconductor date Code sot-23 355 sot-23 marking 1F SOT-23 sot-23 body marking 02 Code sot-23 on semiconductor 359 marking sot23
    Text: BC846ALT1 Series BC846, BC847 and BC848 are Preferred Devices General Purpose Transistors NPN Silicon Features http://onsemi.com • Pb−Free Packages are Available • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V COLLECTOR 3


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    BC846ALT1 BC846, BC847 BC848 BC846 BC847, BC850 BC848, BC849 MARKING 358 sot-23 marking code 359 sot-23 marking 1G SOT23 359 sot23 On semiconductor date Code sot-23 355 sot-23 marking 1F SOT-23 sot-23 body marking 02 Code sot-23 on semiconductor 359 marking sot23 PDF

    D1224

    Abstract: 2SD1224
    Text: 2SD1224 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1224 Pulse Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)


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    2SD1224 D1224 2SD1224 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD1224 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1224 Pulse Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)


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    2SD1224 PDF

    2SD1224

    Abstract: D1224
    Text: 2SD1224 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1224 Pulse Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)


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    2SD1224 2SD1224 D1224 PDF

    2SB865

    Abstract: No abstract text available
    Text: Ordering number:828D PNP/NPN Epitaxial Planar Silicon Darlington Tranasistors 2SB865/2SD1153 Drivers Applications Applications Package Dimensions • Relay drivers, hammer drivers, lamp drivers, motor drivers. unit:mm 2006A [2SB865/2SD1153] Features · High DC current gain 4000 or more .


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    2SB865/2SD1153 2SB865/2SD1153] SC-51 2SB865 2SB865 PDF

    2SD1784

    Abstract: No abstract text available
    Text: 2SD1784 TOSHIBA Field Effect Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1784 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)


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    2SD1784 2SD1784 PDF

    BC846BLT1

    Abstract: BC846 BC846ALT1 BC846ALT3 BC846BLT3 BC847 BC847ALT1 BC848 BC849 BC850
    Text: BC846ALT1 Series BC846, BC847 and BC848 are Preferred Devices General Purpose Transistors NPN Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V http://onsemi.com ESD Rating – Machine Model: >400 V COLLECTOR 3 MAXIMUM RATINGS


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    BC846ALT1 BC846, BC847 BC848 BC846 BC847, BC850 BC848, BC849 BC846BLT1 BC846 BC846ALT3 BC846BLT3 BC847ALT1 BC849 BC850 PDF

    BC846

    Abstract: BC846ALT1 BC846ALT3 BC846BLT1 BC846BLT3 BC847 BC847ALT1 BC848 BC849 BC850
    Text: BC846ALT1 Series BC846, BC847 and BC848 are Preferred Devices General Purpose Transistors NPN Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V http://onsemi.com ESD Rating – Machine Model: >400 V COLLECTOR 3 MAXIMUM RATINGS


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    BC846ALT1 BC846, BC847 BC848 BC846 BC847, BC850 BC848, BC849 BC846 BC846ALT3 BC846BLT1 BC846BLT3 BC847ALT1 BC849 BC850 PDF

    CD 4060 PIN DIAGRAM

    Abstract: constant current power supply circuit diagram schematic diagram inverter 12v to 5v 30a ic 4060 pin configuration diagram Regulated Power Supply Schematic Diagram ADJUSTABLE VOLTAGE AND CURRENT REGULATOR 12v 30a F103 potentiometer ic601 ic 4060 pin diagram lambda LMS
    Text: INSTRUCTION MANUAL FOR LLS-4000 POWER SUPPLY SERIES u u m tw m m m A Rev B IM-LLS-4000 INSTRUCTION MANUAL FOR REGULATED POWER SUPPLIES LLS-4000 SERIES This manual provides instructions intended for the operation of Lambda power supplies, and is not to be reproduced without the written consent of Lambda Electronics. All information contained herein applies


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    LLS-4000 LLS-4000 IM-LLS-4000 IC50I CD 4060 PIN DIAGRAM constant current power supply circuit diagram schematic diagram inverter 12v to 5v 30a ic 4060 pin configuration diagram Regulated Power Supply Schematic Diagram ADJUSTABLE VOLTAGE AND CURRENT REGULATOR 12v 30a F103 potentiometer ic601 ic 4060 pin diagram lambda LMS PDF

    28B11

    Abstract: 2SB1126 2SD1626
    Text: Ordering number: EN 1721A 2SB1126/2SD1626 PNP/NPN Epitaxial Planar Silicon Transistors For Various Drivers Applications . Relay drivers, hammer drivers, lamp drivers, motor drivers. Features . High DC current gain 4000 or greater . . Large current capacity.


    OCR Scan
    2SB1126/2SD1626 2SB1126 250mm' 28B11 2SD1626 PDF

    tu235

    Abstract: No abstract text available
    Text: SURFACE-MOUNT D72Y1.5D1.2 NPN POWER DARLINGTON TRANSISTORS 30 VOLTS 1.5 AMP, 10 WATTS Designed for pulse motor drive, hammer drive applications, switching applications, power amplifier applications. Features: • High DC Current Gain : hFE = 4000 Min. (VcE = 2V, lc = 150mA)


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    D72Y1 150mA) tu235 PDF