4c6 toroids
Abstract: Design of H.F. Wideband Power Transformers Philips Application Note ECO6907 4C6 toroid AN98030 2222 632 BLW96 ECO6907 BLW50F blw96 equivalent
Text: APPLICATION NOTE Two-stage wideband HF linear amplifier for 400 W PEP using BLW96 and BLW50F AN98030 Philips Semiconductors Two-stage wideband HF linear amplifier for 400 W PEP using BLW96 and BLW50F Application note AN98030 CONTENTS 1 PART 1 SINGLE-STAGE WIDEBAND 1.6 − 30 MHz LINEAR AMPLIFIER FOR 400 W PEP USING TWO BLW96
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BLW96
BLW50F
AN98030
BLW96
4c6 toroids
Design of H.F. Wideband Power Transformers
Philips Application Note ECO6907
4C6 toroid
AN98030
2222 632
ECO6907
BLW50F
blw96 equivalent
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Untitled
Abstract: No abstract text available
Text: STI17771 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)400ã V(BR)CBO (V)400 I(C) Max. (A) Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC) I(CBO) Max. (A)250n» @V(CBO) (V) (Test Condition)400 h(FE) Min. Current gain.100
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STI17771
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Untitled
Abstract: No abstract text available
Text: STI17773 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)400ã V(BR)CBO (V)400 I(C) Max. (A) Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC) I(CBO) Max. (A)250n» @V(CBO) (V) (Test Condition)400 h(FE) Min. Current gain.100
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STI17773
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Untitled
Abstract: No abstract text available
Text: STI17770 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)400ã V(BR)CBO (V)400 I(C) Max. (A) Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC) I(CBO) Max. (A)250n» @V(CBO) (V) (Test Condition)400 h(FE) Min. Current gain.100
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STI17770
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PT6709
Abstract: 2L TRANSISTOR NPN planar RF transistor 61dB 2023W
Text: PT6709 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PT6709 is a planar transistor designed primarily for UHF Class-C, 28 V transmitters. up to 400 MHz. PACKAGE STYLE .380 2L FLG FEATURES: • PG = 4.6 dB min. at 20 W/400 MHz • ηC = 60 % min. at 20W/400 MHz
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PT6709
PT6709
0W/400
2L TRANSISTOR
NPN planar RF transistor
61dB
2023W
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AM81416-020
Abstract: No abstract text available
Text: AM81416-020 RF & MICROWAVE TRANSISTORS COMMUNICATIONS APPLICATIONS . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 17.6 W MIN. WITH 6.4 dB GAIN .400 x .400 2LFL S036
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AM81416-020
AM81416-020
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AM0608-200
Abstract: S042 30w amplifier
Text: AM0608-200 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION INTERNAL INPUT MATCHING METAL/CERAMIC HERMETIC PACKAGE POUT = 220 W MIN. WITH 8.7 dB GAIN .400 x .400 2NLFL S042 hermetically sealed ORDER CODE
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AM0608-200
AM0608-200
S042
30w amplifier
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AM80610-030
Abstract: S042
Text: AM80610-030 RF & MICROWAVE TRANSISTORS UHF COMMUNICATIONS APPLICATIONS . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED INPUT/OUTPUT MATCHING METAL/CERAMIC HERMETIC PACKAGE POUT = 30 W MIN. WITH 8.5 dB GAIN .400 x .400 2NLFL S042 hermetically sealed
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AM80610-030
AM80610-030
S042
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81350M
Abstract: MSC81350M S042 MSC8
Text: MSC81350M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . REFRACTORY/GOLD METALLIZATION RUGGEDIZED VSWR 20:1 INTERNAL INPUT/OUTPUT MATCHING LOW THERMAL RESISTANCE METAL/CERAMIC HERMETIC PACKAGE POUT = 350 W MIN. WITH 7.0 dB GAIN .400 x .400 2NLFL S042
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MSC81350M
81350M
MSC81350M
81350M
S042
MSC8
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MSC81250M
Abstract: S042
Text: MSC81250M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . REFRACTORY\GOLD METALLIZATION RUGGEDIZED VSWR 20:1 INTERNAL INPUT/OUTPUT MATCHING LOW THERMAL RESISTANCE METAL/CERAMIC HERMETIC PACKAGE POUT = 250 W MIN. WITH 6.2 dB GAIN .400 x .400 2NLFL S042
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MSC81250M
81250M
MSC81250M
S042
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Untitled
Abstract: No abstract text available
Text: « /\°7 — T / W ^ / Power Devices B /\7 — î -i i ' K' H? iS à ìÌ^ - f High speed switching transistors m * Vceo Volts 80 Ic Com. Aflips. 7 200 200 200 200 300 400 5 6 10 15 15 3 400 400 400 400 400 400 400 400 400 400 400 500 5 5 5 7 7 10 V ceo
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O-220AB
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IRFP 740
Abstract: SGSP364 sgsp369 TSD4M250V IRF 810 IRFP150 SGS100MA010D1 TSD4M350V TSD4M351V 220 to 110 power
Text: L^mg SGS-THOMSON A/f consumer MMiLKgWMtSS TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION 'c v CBO v CEO ptot A (V) (V) <W) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400 330 330 6 6 6 6 7 7
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IRF742FI
IRF740
IRF740FI
SGSP475
SGSP575
IRF350
IRFP350FI
TSD4M350V
IRF823
IRF823FI
IRFP 740
SGSP364
sgsp369
TSD4M250V
IRF 810
IRFP150
SGS100MA010D1
TSD4M351V
220 to 110 power
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irfp 950
Abstract: tsd4m450v SGSP479 transistor BUZ45 SGSP369 BUZ74 STHV82 IRFP 740 IRF 950 SGSP239
Text: L^mg SGS-THOMSON A/f consumer M M iL K gW M tSS TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION 'c v CBO v CEO ptot A (V) (V) <W) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400 330 330 6 6 6
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SGS35MA050D1
TSD4M450V
MTP3N60
MTP3N60FI
MTH6N60FI
MTP6N60
STHV82
STHV102
TSD5MG40V
STHI07N50FI
irfp 950
SGSP479
transistor BUZ45
SGSP369
BUZ74
IRFP 740
IRF 950
SGSP239
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IRFP 740
Abstract: IRF 810 IRF 426 irf transistors irfp 730 BUZ 82 Diodes BUZ C 840 irf 840 Diodes BUZ 840 BU 102
Text: L^mg SGS-THOMSON consumer A / f M M iL K gW M tSS TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION 'c v CBO v CEO ptot A (V) (V) <W) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400 330 330 6 6
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MTP3N60
MTH6N60
MTP6N60
IRFP 740
IRF 810
IRF 426
irf transistors
irfp 730
BUZ 82
Diodes BUZ C 840
irf 840
Diodes BUZ 840
BU 102
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6DI15S-050
Abstract: 1DI300ZP-120 m114 1di200 6DI20MS-050 M615
Text: /\°7 —t / W X / Power Devices • v ,:i~ J t' PowerTransistor Modules Power transistor modules with zener diode for snubber circuit Vcso V ceo tc Votts sus Votts Com Amps 300 400 400 300 300 400 400 1DI300MN-050 1DI400MN-050 1DI400MP-050 1DI300MN-120
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1DI300MN-050
1DI400MN-050
1DI400MP-050
1DI300MN-120
1DI300MP-120
1DI400MN-120
1DI400MP-120
1DI200ZN-120
1DI200ZP-120
1DI300ZN-120
6DI15S-050
1DI300ZP-120
m114
1di200
6DI20MS-050
M615
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Untitled
Abstract: No abstract text available
Text: FZ 400 R 12 KL Transistor Thermische Eigenschaften Transistor RthJC Elektrische Eigenschaften Thermal properties DC, pro Baustein / per module 0,052 °C/W pro Baustein / per module 0,03 Electrical properties °C/W Maximum rated values V cES 1200 V 400 A Ic
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F400
Abstract: No abstract text available
Text: FZ 400 R 12 KF 2 Therm ische Eigenschaften Thermal properties Rthjc DC, pro Baustein /p e r module 0,052 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties pro Baustein / per module 0,03 °C/W Maximum rated values VcES 1200 V 400 A
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0002G13
F400
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Untitled
Abstract: No abstract text available
Text: SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ISSUE 2 - DECEMBER 1995 FEATURES * 400 Volt VCE0 * 200m A continuous current * Pt0,= 2 W a tt PARTMARKING DETAIL - c FZT558 B ABSOLUTE MAXIMUM RATINGS. VALUE UNIT VcBO -400 V VcEO -400 V PARAMETER
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OT223
FZT558
-20mA,
-50mA,
-10mA,
20MHz
-100V
-10mA
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T1P122
Abstract: T1P41C MJE30SST t1p41 T1P31 T1P41A BD211 2SD880Y 2SD88D 2N529B
Text: POWER PACKAGE TRANSISTORS NPN M a x im u m R a t in g s Type No. 2SC3039 MJE13005 T1PS0 vEB0 PD •CBO • vC8 (V) (V) (V) (W) (V) Min Min Min e Tc=25°C 500 400 700 400 500 400 7 50 9 Max 10 hFE 400 40 e 'c (A) Min 75 5 450 350 5 300 300 3 21 T1P48 400
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2SC3039
MJE13005
T1P49
MJE30SST
TIP31A
T1P41A
TIP120
CIL4006
BD211
BD243
T1P122
T1P41C
t1p41
T1P31
2SD880Y
2SD88D
2N529B
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Untitled
Abstract: No abstract text available
Text: FZ 400 R 12 KF 2 Therm ische Eigenschaften Thermal properties Rthjc DC, pro Baustein /p e r module 0,052 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties VcES Maximum rated values 1200 V 400 A pro Baustein / per module Ic 0,03 °C/W
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34032T7
0002G13
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Untitled
Abstract: No abstract text available
Text: FZ 400 R 06 KF 3 Transistor Transistor Therm ische Eigenschaften Thermal properties 0,074 °C/W DC, pro Baustein / per module R th J C Elektrische Eigenschaften Electrical properties VcES Maximum rated values 600 V 400 A pro Baustein / per module °C/W 150 °C
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MJDI22
Abstract: No abstract text available
Text: DPAK DEVICES continued Bipolar Power Transistors Device NPN PNP MJD340 MJD47 MJD350 MJD31 MJD31C MJD148 MJD6O39 W MJD243 MJD200 MJD41C MJD44H11 MJDI22 W MJD30S5 MJD44E3 (1) VCEO(sus) Volts Min Min/Max Am ps 0.5 300 250 350 400 400 100 40 100 45 80 100 25
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MJD340
MJD47
MJD50
MJD13003
MJD350
MJD5731
1k/12k
MJD31
MJD31C
MJDI22
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SELF vk200
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF P o w er F ield -E ffect Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. 5.0 W, to 400 MHz N-CHANNEL MOS BROADBAND RF POWER
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MRF134
68-ohm
AN215A
SELF vk200
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T1P122
Abstract: T1P41C BD211 T1P41A BU40S t1p41 T1P121 T1P49 2SC3039 BU806
Text: POWER PACKAGE TRANSISTORS NPN M a x im u m R a t in g s No. 2SC3039 MJE13005 TIPSO v CB0 (V) Min 500 700 500 VCEO (V) Min 400 400 400 v EB0 (V) Min 7 9 5 Electrical C h ara cte ristics PD (W) 8 Tc=25°C 50 _ | f l Typs 10 e vC8 e "FE (V) Min 400 75 40 ic
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2SC3039
MJE13005
T1P49
MJE340T
T1P48
bd243a
MJE3055T
tip31a
t1p41a
tip120
T1P122
T1P41C
BD211
BU40S
t1p41
T1P121
BU806
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