IEC 947-7-1 terminal block 400v
Abstract: din 46235 1064760000 M12-M16 1011120000 95 WDU Neozed 1027700000 gw 4007 1020500000
Text: W-series 2 W-series sets standards! When it comes to functional perfection even in details, Weidmüller’s W-series defines the market standards for many years now! The W-series comprises producte for conductor cross-sections between 1.5 and 300 mm2 which can be used for all important electrical applications connecting,
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TAG 600
Abstract: LINDNER fuses LR 103020 LEVEL 3 SIBA FUSE FF IEC 947-7-1 terminal block 400v gw 4007 95324 160990 G-FUSE 24v DC Weidmuller BLZ 5.08
Text: W-series 2 W-series W-series Weidmüller is the world wide market leader in terminal blocks. W-series constantly sets new standards. The systematics of W-series are on continuous bases improved: l same dimensions in a range from 2.5 – 35 mm2, features a.o. disconnect
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LC1-D50A
Abstract: LC1D40A schneider LC1-D09 LC1-DWK12 LC1D65A LC1-D09 LAD4TBDL LC1-D18 LC1-D09 installation manual LC1-D12
Text: Motor control 1 TeSys range provide you more simplicity, compactness, openness and flexibility . so many evolutions and new items to aid your productivity. 2 Accurate and reliable control of motors 3 4 5 6 7 Increase your productivity, adopt our solutions which help to simplify
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LC1-F630,
F6304
LC1-F500
F5004
LC1-F400
F4004
LC1-D50A
LC1D40A
schneider LC1-D09
LC1-DWK12
LC1D65A
LC1-D09
LAD4TBDL
LC1-D18
LC1-D09 installation manual
LC1-D12
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16 Relay Control Board 16 Channel 24V Relay Module
Abstract: amp PA66-gf 13 connector
Text: TABLE OF CONTENTS CONNECTOR TO TERMINAL BLOCK MODULES GENERAL PURPOSE/ INTERFACE RELAYS Compact and reliable connections between high density connectors and high quality screw-cage clamp terminal blocks; DIN Rail mountable Page . . . . . . . . . . . . . . . . . . . . . . .6-7
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MONIT8822-6000
16 Relay Control Board 16 Channel 24V Relay Module
amp PA66-gf 13 connector
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4N60
Abstract: 4N60S ssp4n50 40 gd 4n mosfet 4n60
Text: SSP4N 55/4N 60 SSH4N55/4N 60 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO-220 Lower R d s <o n Improved inductive ruggedness Fast switching tim es Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area
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55/4N
SSH4N55/4N
O-220
SSP4N55
SSH4N55
SSP4N60
SSH4N60
4N60
4N60S
ssp4n50
40 gd 4n
mosfet 4n60
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4N60
Abstract: SSH4N60 4N60P ssp4n50 SSH4N55 SSP4N55 SSP4N60 mosfet 4n60
Text: SAMSUN6 ELECTRONICS INC SSP4N55/4N6Ó SSH4N55/4N 60 b7E T> • 7*lbmH2 OOl^BHI OTO ■ SMGK N-CHANNEL POWER MOSFETS FEATURES • « • • • • • TO-220 Low er R ds ON Im proved in d u c tive ru g g ed n es s F a st sw itch ing tim e s R u g g ed polysilicon g a te cell stru ctu re
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71b4142
SSP4N55/4N6Ã
SSH4N55/4N60
SSP4N55/SSH4N55
SSP4N60/SSH4N60
SSP4N55
SSH4N55
SSP4N60
SSH4N60
SSP4N55/4N60
4N60
SSH4N60
4N60P
ssp4n50
SSH4N55
mosfet 4n60
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4n70
Abstract: SSP4N70
Text: N-CHANNEL POWER MOSFETS SSP4N70 SSH4N70 FEATURES • • • • • • • TO -220 Low er R d s io n Im proved in d u c tiv e rug g e d n e ss Fast s w itc h in g tim e s R ugged p o ly s ilic o n gate c e ll s tru c tu re Lower in p u t ca p a cita n ce
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SSP4N70
SSH4N70
SSP4N70
4n70
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1RFS730
Abstract: irfs730a
Text: IRFS730A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ b v dss Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gale Charge Extended Safe Operating Area Lower Leakage Current : 10 pA{M ax. @ V^. =400V - 400V
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IRFS730A
1RFS730A
1RFS730
irfs730a
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4N90
Abstract: No abstract text available
Text: S S W Æ 4N 90 AS Advanced Power MOSFET FEATURES B V dss = 9 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 MA Max. @ VDS= 900V
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SSW/I4N90AS
4N90
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ufnf230
Abstract: UFNF93H UFNF9 40 gd 4n diode UFN232
Text: POWER MOSFET TRANSISTORS HfflSI? 200 Volt, 0.4 Ohm N-Channel UFNF232 UFNF233 FEATURES • Fast S w itching • Low Drive Current DESCRIPTION The U nitrode power M O SFET d esign utilizes the m ost advanced technology available. T h is efficie n t design a ch ieves a very low R dsioih and a high tran scon d u ctan ce.
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UFNF232
UFNF233
UFN230
UFN231
UFN232
UFN233
ufnf230
UFNF93H
UFNF9
40 gd 4n diode
UFN232
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TPCS8201 TOSHIBA FIELD EFFECT TRANSISTOR T P SILICON N CHANNEL MOS TYPE U-MOSH r s j o m INDUSTRIAL APPLICATIONS Unit in mm LITHIUM ION BATTERY NOTE BOOK PC PORTABLE MACHINES AND TOOLS □ □II□II□ I IH Low Drain-Source ON Resistance : Rd S(ON) —23mO (Typ.)
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TPCS8201
--23mO
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Untitled
Abstract: No abstract text available
Text: m 7*12*1237 rz 7 Ä 7f G04b243 ôbQ • SGTH _ SGS-TUOMSON RÆ Q M[iLËOT(s«S S T P 4 N 1 0 0 XI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss S TP 4N 1 0 0 X I ■ . ■ . . ■ . 1000 V R d S( oii < 4 0 Id 2 A TYPICAL RDS(on) = 3.1 Cl
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G04b243
7TETS37
STP4N100XI
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • • • • • PHP4N60E, PHB4N60E SYMBOL QUICK REFERENCE DATA d R epetitive A valanche Rated Fast sw itching S table off-state characteristics High therm al cycling perform ance
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PHP4N60E,
PHB4N60E
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Untitled
Abstract: No abstract text available
Text: 7 =3E T E 37 G D M b BI S TTb • S G T H SCS-THOMSON RÆ 0Mq [I[UOT 2)«S STP4N40 STP4N40FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP4N40 STP4N40FI ■ . ■ ■ ■ V dss Ros(on) Id 400 V 400 V < 2.1 Ü < 2.1 Î2 4 A 3 A TYPICAL R d s (oi-i) = 1.65 Q
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STP4N40
STP4N40FI
400VDS
400VOS
STP4N40/FI
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Untitled
Abstract: No abstract text available
Text: STN4NE03 N - CHANNEL 30V - 0.045ft - 4A - SOT-223 STripFET POWER MOSFET TYPE V dss R D S o n Id STN 4N E03 30 V < 0 .0 6 Q 4 A . TYPICAL R d s (oh) = 0.045 £1 m EXCEPTIO NALdv/dt CAPABILITY . AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . APPLICATION ORIENTED
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STN4NE03
045ft
OT-223
OT-223
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IC-7220
Abstract: UPA1523H NEC 7220 NEC TRANSISTOR 8882 WF S.E.60
Text: ~ t — S 7 • S '— h <r7 C o m p o u n d F ie ld E f f e c t P o w e r T r a n s i s t o r ¿¿PAI 5 2 3 '! P ^ - V — ^ U ^ - - M O S F E T 7 W I i f f l A/PA1523ÌÌ, P -f i t i * ÎC i F E T T \ 5 V ftifê& IC eo 4 -y f - * > 4 ^ K, T O : mm r - c - t o
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uPA1523
IC-7220
UPA1523H
NEC 7220
NEC TRANSISTOR 8882
WF S.E.60
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TP4N50
Abstract: TP4N45 POWER MOSFET 4n45 k 3436 ic k 3436 transistor
Text: t MOTOROLA SC 14E 0 I X ST RS/R F b 3 b ?E S4 OOfllTlfl 3 | T -Z T -f! MOTOROLA H SEM IC O N D U C T O R TECHNICAL DATA M TM 4N45 M TM 4N50 MTP4N45 MTP4N50 Designer's Data Sheet Pow er Field Effect Transistor N-Channel Enhancem ent-Mode Silicon Gate T M O S
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MTP4N45
MTP4N50
MTM/MTP4N45
TP4N50
TP4N45
POWER MOSFET 4n45
k 3436 ic
k 3436 transistor
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K14N05
Abstract: 4N06 4N05
Text: *57 s t k 1 4N o5 S T K 1 4 N 06 S G S -T H O M S O N ilLHCTIIMDe N - CHANNEL ENHANCEMENT MODE _ POWER MQS TRANSISTOR PRELI MI NARY DATA T YPE V dss R DS on Id STK14N 05 50 V < 0.12 a 14 A STK14N 06 60 V < 0.12 £2 14 A • . ■ ■ . ■ ■ .
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STK14N
K14N05
4N06
4N05
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2SK2412
Abstract: 3R-90 TC-8031 2sk2412k
Text: J_ I C • E * 1K N MOSïï^l^ejÏJ^MOS FET MOS Field Effect Transistor ^ 2 S K 2 4 1 2 -V ¿¡WU/\0|7 -MOSFET 'f y 3- X C? Æ I > I l f f l 2 S K 2 4 1 2 liN 5 :- ^ t O H É a / \ “ 7 - M 0 S F E T T ', X < y •^■•fe : m m 10.0 m + 0.3 4.5 ± 0.2
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2SK2412
2SK2412
MP-45F
O-220)
3R-90
TC-8031
2sk2412k
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1496C
Abstract: IRF 470 94Q3
Text: 9403A First-In First-Out FIFO Buffer Memory General Description Features The 9403A is an expandable fall-through type high-speed First-In First-Out (FIFO) Buffer Memory optimized for high speed disk or tape controllers and communication buffer applications. It is organized as 16-words by 4-bits and may
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16-words
e3-299-7001
2-26A
014S2
AA32096
O13308
1496C
IRF 470
94Q3
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Untitled
Abstract: No abstract text available
Text: April 1989 Semiconductor & 9403A First-In First-Out FIFO Buffer Memory General Description Features The 9403A is an expandable fall-through type high-speed First-In First-Out (FIFO) Buffer Memory optimized for high speed disk or tape controllers and communication buffer
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16-words
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Rthv
Abstract: R1124NS16X R1124NS18X 24NS1
Text: • n w i t s i u u n Date:- 20 Jun, 2001 u e Data Sheet Is s u e :-1 Distributed Gate Thyristor Types R1124NS16X to R1124NS18x Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS V drm R e p e titive p e a k o ff-sta te vo lta g e , note 1 160 0-1 8 0 0
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R1124NS16X
R1124NS18x
R1124NS18x
Rthv
24NS1
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Untitled
Abstract: No abstract text available
Text: LED HS36S1FR-J t t H » LED L ig h tin g Pow er Supply H S 3 6 S 1 F R -J S pecification 1. J l W W g Application LED R g^ ffl^ i£® ® H S 36S lF R -J {C jiffli-5o This specification is applied to constant current power supply (HS36S1FR-J) for LED lighting.
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HS36S1FR-J
HS36S1FR-J)
HS36S
WS-1150B0
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1RF150
Abstract: AN-947 equivalent AN-947 10CGD capax Pelly 1c7 diode v1035a I435
Text: A P P L IC A T I O N N O T E 947 Understanding HEXFET Switching Performance B y S. Clemente, B.R. Pelly, A. Iild o rl Abstract A simple analytical technique for predicting the switching perform ance of the H E X F E T is presented. O osed-form solutions for the gate voltage, drain current, and
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AN-947
1RF150
AN-947 equivalent
10CGD
capax
Pelly
1c7 diode
v1035a
I435
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