4.8 MH Search Results

transistor master replacement guide

Abstract: color tv block diagram siemens master drive circuit diagram Motorola MC1374 MPG3002 mc44000 mc44131 mc1377 tv block diagram MC44002P
Contextual Info: Consumer Electronic Circuits In Brief . . . Page Entertainment Radio Receiver Circuits . . . . . . . . . . . . 4.8–2 Entertainment Receiver RF/IF . . . . . . . . . . . . . . . . . 4.8–2 C–Quam AM Stereo Decoders . . . . . . . . . . . . . . . 4.8–2

P3NK90ZFP

Abstract: D3NK90Z P3NK90Z
Contextual Info: STP3NK90Z - STP3NK90ZFP STD3NK90Z - STD3NK90Z-1 N-CHANNEL 900V - 4.1Ω - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH Power MOSFET TYPE STP3NK90Z STP3NK90ZFP STD3NK90Z STD3NK90Z-1 VDSS RDS on 900 900 900 900 < 4.8 < 4.8 < 4.8 < 4.8 V V V V Ω

P3NK90ZFP

Abstract: P3NK90 p3nk90z STP3NK90ZFP d3nk9 STD3NK90ZT STD3NK90Z STD3NK90Z-1 STD3NK90ZT4 STP3NK90Z
Contextual Info: STP3NK90Z - STP3NK90ZFP STD3NK90Z - STD3NK90Z-1 N-CHANNEL 900V - 4.1Ω - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH Power MOSFET TYPE STP3NK90Z STP3NK90ZFP STD3NK90Z STD3NK90Z-1 VDSS RDS on 900 900 900 900 < 4.8 < 4.8 < 4.8 < 4.8 V V V V Ω

P3NK90ZFP

Abstract: p3nk90z STP3NK90ZFP P3NK90 d3nk9 d3nk90z STD3NK90ZT D3NK STP3NK90Z d3nk90
Contextual Info: STP3NK90Z - STP3NK90ZFP STD3NK90Z - STD3NK90Z-1 N-CHANNEL 900V - 4.1Ω - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH Power MOSFET TYPE STP3NK90Z STP3NK90ZFP STD3NK90Z STD3NK90Z-1 V DSS R DS on 900 900 900 900 < 4.8 Ω < 4.8 Ω < 4.8 Ω < 4.8 Ω

B82470A0472M000

Abstract: B82470A1103M000 IND0479-R IND0598-R-E IND0906-W-E 020C IND0397-K B82470A1223M000 B82470-A1682-M B82470A0
Contextual Info: SMT power inductors Low profile Size 4.8 x 4.8 × 1.04 / 4.8 × 4.8 × 1.2 mm Series/Type: B82470A0/A1 Date: March 2008 Data Sheet  EPCOS AG 2008. Reproduction, publication and dissemination of this publication and the information contained therein without EPCOS’ prior express consent is prohibited.

Contextual Info: SMT power inductors Low profile Size 4.8 x 4.8 × 1.04 / 4.8 × 4.8 × 1.2 mm Series/Type: B82470A0/A1 7f…fÁRspp… March 2008 Date: EPCOS AG 2008. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS’ prior express consent is prohibited.

B82470A

Contextual Info: SMT power inductors Low profile Size 4.8 x 4.8 × 1.04 / 4.8 × 4.8 × 1.2 mm Series/Type: B82470A0/A1 7f…fÁRspp… March 2008 Date: EPCOS AG 2008. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS’ prior express consent is prohibited.

UPD789012

Contextual Info: IC dependence of oscillating characteristics uPD789012 FCR4.0MC5 - STD N. ItM I C » \ •. [V] V1H/V1L sn 4.7 9K 4.8, 386 4.8, 8« 4.8^ 907 4.8, b. Room Temp. Vdd CV] m V2H/V2L 5.8 -.1 .4 5.8 .1 .4 5.8, .4 S.8, .4 5.8, .1 .5 e. Utb] d. CuS] 5 va *. item a*e

F2HNK60Z

Abstract: f2hnk F2HN q2hnk60 q2hnk6
Contextual Info: STQ2HNK60ZR-AP STF2HNK60Z - STD2HNK60Z-1 N-CHANNEL 600V - 4.4Ω - 2.0A TO-220FP/TO-92/IPAK Zener-Protected SuperMESH Power MOSFET TARGET DATA TYPE VDSS RDS on ID PW STQ2HNK60ZR-AP STD2HNK60Z-1 STF2HNK60Z 600 V 600 V 600 V < 4.8 Ω < 4.8 Ω < 4.8 Ω

F2HNK60Z

Abstract: f2hnk60 f2hnk F2HN q2hnk6 Q2HNK60ZR STD1HNK60Z-1 STF2HNK60Z STQ2HNK60ZR-AP q2hnk60
Contextual Info: STQ2HNK60ZR-AP STF2HNK60Z - STD2HNK60Z-1 N-CHANNEL 600V - 4.4Ω - 1.9A TO-220FP/TO-92/IPAK Zener-Protected SuperMESH Power MOSFET TARGET DATA TYPE VDSS RDS on ID PW STQ2HNK60ZR-AP STD2HNK60Z-1 STF2HNK60Z 600 V 600 V 600 V < 4.8 Ω < 4.8 Ω < 4.8 Ω

Wideband Chokes

Abstract: wbs2.5-5 SMD Codes 10-3S4-Z SMD 284
Contextual Info: SMD Wide Band Chokes General, Product and Type Description 6.2.3 ELECTRICAL CHARACTERISTICS TYPE 10 25 50 100 300 - 400 430 - ~ 0.9 WBS1.5-5/4.8/10-4B1 - 275 - 500 350 ~ 0.9 WBS2.5-5/4.8/10-3S4 300 - 625 600 - ~ 0.9 WBS2.5-5/4.8/10-4B1 - 485 - 850 350 ~ 0.9

F2HNK60Z

Abstract: D2HNK60Z STF2HNK60Z q2hnk6 f2hnk60 q2hnk60zr of D2HNK60Z i-pak Package zener diode d2hnk60 DELTA 2000 smps
Contextual Info: STQ2HNK60ZR-AP STF2HNK60Z - STD2HNK60Z-1 N-CHANNEL 600V - 4.4Ω - 2.0A TO-92/TO-220FP/IPAK Zener-Protected SuperMESH MOSFET TYPE VDSS RDS on ID PW STQ2HNK60ZR-AP STD2HNK60Z-1 STF2HNK60Z 600 V 600 V 600 V < 4.8 Ω < 4.8 Ω < 4.8 Ω 0.5 A 2.0 A 2.0 A

Contextual Info: 240 MHz SAW Filter 4.8 MHz Bandwidth Part Number: SF0240BA03143S DESCRIPTION • • • 240 MHz SAW bandpass filter with 4.8 MHz bandwidth. 13.3 x 6.5 mm SMP. RoHS compliant. TYPICAL PERFORMANCE Horizontal: Vertical from Top: Frequency : Relative Magnitude :

SF0240BA03143S

Abstract: MAR 738
Contextual Info: 240 MHz SAW Filter 4.8 MHz Bandwidth Part Number: SF0240BA03143S DESCRIPTION • • • 240 MHz SAW bandpass filter with 4.8 MHz bandwidth. 13.3 x 6.5 mm SMP. RoHS compliant. TYPICAL PERFORMANCE Horizontal: Vertical from Top: S11 220-260 MHz Frequency :

2222A

Abstract: AT-33225 AT-33225-BLK AT-33225-TR1 IC pt 2399 CIRCUIT DIAGRAM t1c8 3316 TRANSISTOR
Contextual Info: 4.8 V NPN Common Emitter Output Power Transistor for AMPS, ETACS Phones Technical Data AT-33225 Features • 4.8 Volt Operation • +31.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package Outline 25 • 70% Collector Efficiency @ 900 MHz, Typ.

Hewlett Packard Co

Contextual Info: ThatH LETT mUHM P AEW CKARD 4.8 VNPN Common Emitter Output Power Transistor for GSM Class IV Phones Tfechnical Data AT-36408 Features • 4.8 Volt Pulsed Operation pulse width = 577 jisec, duty cycle = 12.5% • +35.0 dRm Pout@ 900 MHz, SOIC-8 Surface Mount

AT-36408

Abstract: AT-36408-TR1 transistor 2222a
Contextual Info: 4.8 V NPN Common Emitter Output Power Transistor for␣ GSM Class IV Phones Technical Data AT-36408 Features • 4.8 Volt Pulsed Operation pulse width = 577 µsec, duty cycle = 12.5% SOIC-8 Surface Mount Plastic Package Outline P8 • +35.0 dBm Pout @ 900 MHz,

AT-36408-TR1

Abstract: AT-36408 AT-36408-BLK
Contextual Info: 4.8 V NPN Common Emitter Output Power Transistor for GSM Class IV Phones Technical Data AT-36408 Features • 4.8 Volt Pulsed Operation pulse width = 577 µsec, duty cycle = 12.5% SOIC-8 Surface Mount Plastic Package Outline P8 • +35.0 dBm Pout @ 900 MHz,

transistor 2222a

Abstract: AT-38086 AT-38086-BLK AT-38086-TR1
Contextual Info: 4.8 V NPN Silicon Bipolar Common␣ Emitter Transistor Technical Data AT-38086 Features • 4.8 Volt Pulsed pulse width = 577 µsec, duty cycle = 12.5% /CW Operation 85 mil Plastic Surface Mount Package Outline 86 • +28 dBm Pulsed Pout @␣ 900␣ MHz, Typ.

SF0096BA02394S

Contextual Info: 96 MHz SAW Filter 4.8 MHz Bandwidth Part Number: SF0096BA02394S DESCRIPTION • • • 96 MHz SAW bandpass filter with 4.8 MHz bandwidth for TD-SCDMA applications. 19 x 6.5 mm SMP. RoHS compliant. TYPICAL PERFORMANCE Horizontal: Vertical from top: S11 83.5 to 108.5 MHz

2222A

Abstract: AT-38086 AT-38086-BLK AT-38086-TR1
Contextual Info: 4.8 V NPN Silicon Bipolar Common Emitter Transistor Technical Data AT-38086 Features • 4.8 Volt Pulsed pulse width = 577 µsec, duty cycle = 12.5% /CW Operation 85 mil Plastic Surface Mount Package Outline 86 • +28 dBm Pulsed Pout @ 900 MHz, Typ. • +23.5 dBm CW Pout

AT-33225

Abstract: AT-33225-TR1 transistor 2222a MSOP-3
Contextual Info: 4.8 V NPN Common Emitter Output Power Transistor for␣ AMPS, ET ACS Phones Technical Data AT-33225 Features • 4.8 Volt Operation • +31.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package Outline 25 • 70% Collector Efficiency @␣ 900 MHz, Typ.

CBC 184 transistor

Abstract: CBC 184 c transistor transistor 2222a data sheet AT-31625 AT-31625-BLK AT-31625-TR1
Contextual Info: 4.8 V NPN Common Emitter Medium Power Output Transistor Technical Data AT-31625 Features • 4.8 Volt Operation • +28.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package Outline 25 • 70% Collector Efficiency @ 900 MHz, Typ. • 9 dB Power Gain @ 900 MHz,

Contextual Info: 4.8 V NPN Silicon Bipolar Common Emitter Transistor Technical Data AT-38086 Features • 4.8 Volt Pulsed pulse width = 577 µsec, duty cycle = 12.5% /CW Operation 85 mil Plastic Surface Mount Package Outline 86 • +28 dBm Pulsed Pout @ 900 MHz, Typ. • +23.5 dBm CW Pout