4 GHZ TRANSISTOR Search Results

4 GHZ TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

4 GHZ TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor BF 697 Abstract: transistor kf 469 transistor BI 342 905 682 SOT23 MARKING K 2645 transistor 038N BJT BF 331 KF 569 transistor "micro-x" "marking" 102 AF 1507 Text: SILICON TRANSISTOR NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE	Original	NE680 NE68800 NE68018-T1-A1 NE68019-T1-A1 NE68030-T1-A1 transistor BF 697 transistor kf 469 transistor BI 342 905 682 SOT23 MARKING K 2645 transistor 038N BJT BF 331 KF 569 transistor "micro-x" "marking" 102 AF 1507	PDF
mje 1303 Abstract: BJT BF 331 ET 439 nec d 882 p transistor transistor BI 342 905 682 SOT23 MARKING transistor NEC D 587 transistor KF 517 NE AND micro-X NE680 Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE	Original	NE680 NE680 NE68030-T1-A NE68033-T1B-A1 NE68035 NE68039-T1-A1 NE68039R-T1 NE68800 mje 1303 BJT BF 331 ET 439 nec d 882 p transistor transistor BI 342 905 682 SOT23 MARKING transistor NEC D 587 transistor KF 517 NE AND micro-X	PDF
Untitled Abstract: No abstract text available Text: HEWLETT-PACKARD/ CMPNTS m blE » 4 4 4 7 5 A 4 OOO^flOa 53b H H P A AT-41472 Up to 1 GHz Low Noise Silicon Bipolar Transistor HEW LETT PACKARD Features • • • • TO-72 Package Low Noise Figure: 1.3 dB typical at 0.5 GHz 2.0 dB typical at 1.0 GHz High Associated Gain: 14.0 dB typical at 0.5 GHz	OCR Scan	AT-41472	PDF
HXTR-5103 Abstract: HXTR-5101 it 5001 HXTR-5001 S21E Text: LINEAR POWER TRANSISTOR CHIP COMPONENTS HXTR-5001 CIRCUITS H E W L E T T PACKARD Features INTEGRATED HIGH P1dB LINEAR POWER 23 dBm Typical at 2 GHz 22 dBm Typical at 4 GHz HIGH P1dB GAIN 13.5 dB Typical at 2 GHz 8.0 dB Typical at 4 GHz LOW DISTORTION FOR HYBRID	OCR Scan	HXTR-5001 HXTR-5001 HXTR-5103 HXTR-5101 it 5001 S21E	PDF
HXTR-2001 Abstract: HXTR-5001 HXTR-5002 HXTR-6001 transistor PT 4500 chip die npn transistor equivalent transistor PT 3500 HXTR5 Text: KOP Features HXTR-6001 I 0.013 TYP. • EMITTER PAD CIRCUITS M r COM PONENTS LOW NOISE TRANSISTOR CHIP ■- LOW NOISE FIGURE 1.7 dB Typical at 2 GHz 2.7 dB Typical at 4 GHz HIGH GAIN AT NOISE FIGURE BIAS 13.0 dB Typical at 2 GHz 9.0 dB Typical at 4 GHz 330 (0.013)	OCR Scan	HXTR-6001 HXTR-6001 HXTR-5001 HXTR-5002 HXTR-2001 transistor PT 4500 chip die npn transistor equivalent transistor PT 3500 HXTR5	PDF
transistor GT 1083 Abstract: Hewlett-Packard application note 967 HXTR-5102 4 ghz transistor hewlett-packard application note 972 Y2w TRANSISTOR HP 9605 HP-67 Silicon Bipolar Transistor Hewlett-Packard transistor amplifier 3 ghz Text: PACKARD MM COM PON EN TS LINEAR POWER TRANSISTOR HXTR-5102 Features 20.3 TYP. 0.80 HIGH P1dB LINEAR POWER 29 dBm Typical at 2 GHz 27.5 dBm Typical at 4 GHz 14.2 (0.b6) TYP. 3-05 TYR ( 0 . 12 ) 2.0 (0.0801 HIGH P1dB GAIN 11.5 dB Typical at 2 GHz 7 dB Typical at 4 GHz	OCR Scan	HXTR-5102 HPAC-200 HXTR-5102 HXTR-6101 transistor GT 1083 Hewlett-Packard application note 967 4 ghz transistor hewlett-packard application note 972 Y2w TRANSISTOR HP 9605 HP-67 Silicon Bipolar Transistor Hewlett-Packard transistor amplifier 3 ghz	PDF
ATF-21170 Abstract: 5965-8718E Text: 0.5–6 GHz Low Noise Gallium Arsenide FET Technical Data ATF-21170 Features • Low Noise Figure: 0.9 dB Typical at 4 GHz • High Associated Gain: 13.0 dB Typical at 4 GHz • High Output Power: 23.0 dBm Typical P1 dB at 4 GHz • Hermetic Gold-Ceramic Microstrip Package	Original	ATF-21170 ATF-21170 5965-8718E 5966-4979E 5965-8718E	PDF
702 TRANSISTOR Abstract: HA 12058 706 TRANSISTOR sot-23 540 w 03 oj 3E-015 0 261 S04 663 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDW IDTH PRO DU CT: fT = 10 GHz • LOW NOISE FIG URE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIG H ASSO C IA TED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VO LTAG E LOW C U R R EN T PERFO RM AN CE	OCR Scan	NE680 PACKAGEOUTUNE39 PACKAGEOUTUNE39R m27S2S 702 TRANSISTOR HA 12058 706 TRANSISTOR sot-23 540 w 03 oj 3E-015 0 261 S04 663	PDF
ATF-25570 Abstract: No abstract text available Text: 0.5 – 10 GHz General Purpose Gallium Arsenide FET Technical Data ATF-25570 Features • High Output Power: 20.5 dBm Typical P1 dB at 4␣ GHz • Low Noise Figure: 1.0 dB Typical at 4 GHz • High Associated Gain: 14.0␣ dB Typical at 4␣ GHz • Hermetic Gold-Ceramic	Original	ATF-25570 ATF-25570	PDF
TRANSISTOR 12 GHZ Abstract: ATF-36077 amplifier TRANSISTOR 12 GHZ pseudomorphic HEMT ATF-36077-STR transistor atf ku-band lnb satellite Text: 2–18 GHz Ultra Low Noise Pseudomorphic HEMT Technical Data ATF-36077 Features Description • PHEMT Technology • Ultra-Low Noise Figure: 0.5 dB Typical at 12 GHz 0.3 dB Typical at 4 GHz • High Associated Gain: 12 dB Typical at 12 GHz 17 dB Typical at 4 GHz	Original	ATF-36077 ATF-36077 ATF-36077-STR ATF-36077-TRl 5962-0193E 5965-8726E TRANSISTOR 12 GHZ amplifier TRANSISTOR 12 GHZ pseudomorphic HEMT ATF-36077-STR transistor atf ku-band lnb satellite	PDF
Untitled Abstract: No abstract text available Text: 2–18 GHz Ultra Low Noise Pseudomorphic HEMT Technical Data ATF-36077 Features Description • PHEMT Technology • Ultra-Low Noise Figure: 0.5 dB Typical at 12 GHz 0.3 dB Typical at 4 GHz • High Associated Gain: 12 dB Typical at 12 GHz 17 dB Typical at 4 GHz	Original	ATF-36077 ATF-36077 5962-0193E 5965-8726E	PDF
ATF-36077 Abstract: 36077 ATF-36077-STR pseudomorphic HEMT transistor atf ATF36077-STR 5965-8726E Text: 2–18 GHz Ultra Low Noise Pseudomorphic HEMT Technical Data ATF-36077 Features Description • PHEMT Technology • Ultra-Low Noise Figure: 0.5 dB Typical at 12 GHz 0.3 dB Typical at 4 GHz • High Associated Gain: 12 dB Typical at 12 GHz 17 dB Typical at 4 GHz	Original	ATF-36077 ATF-36077 ATF-36077-STR ATF-36077-TRl 36077 ATF-36077-STR pseudomorphic HEMT transistor atf ATF36077-STR 5965-8726E	PDF
SN 74 868 Abstract: HEMT marking P Z0502 Text: What mLliM HEWLETT* PACKARD 1.5-18 GHz Surface Mount Pseudomorphic HEMT Technical Data ATF-36163 Features • Low M inim um N oise Figure: I dB Typical at 12 GHz 0.6 dB Typical at 4 GHz • A ssociated Gain: 9.4 dB Typical at 12 GHz 15.8 dB Typical at 4 GHz	OCR Scan	ATF-36163 SN 74 868 HEMT marking P Z0502	PDF
Untitled Abstract: No abstract text available Text: 2 – 8 GHz Medium Power Gallium Arsenide FET Technical Data ATF-45101 Features • High Output Power: 29.0 dBm Typical P1 dB at 4 GHz • High Gain at 1dB Compression: 10.0 dB Typical G1 dB at 4 GHz • High Power Efficiency: 38% Typical at 4 GHz • Hermetic Metal-Ceramic	Original	ATF-45101 5965-8736E	PDF

Untitled Abstract: No abstract text available Text: Thal PACKARD HEWLETT WLKM 0 .5 -1 0 GHz Low Noise Gallium Arsenide FET Technical Data ATF-25170 F eatures • Low N oise Figure: 0.8 dB Typical at 4 GHz • High A ssociated Gain: 14.0 dB Typical at 4 GHz • High Output Power: 21.0 dBm Typical Pi dB at 4 GHz	OCR Scan	ATF-25170 ATF-25170 44475A4 0D1770b	PDF
5965-8734E Abstract: max 8734E ATF-45171 Text: 2 – 8 GHz Medium Power Gallium Arsenide FET Technical Data ATF-45171 Features • High Output Power: 29.0␣ dBm Typical P 1 dB at 4␣ GHz • High Gain at 1dB Compression: 10.5 dB Typical G1 dB at 4␣ GHz • High Power Efficiency: 38% Typical at 4␣ GHz	Original	ATF-45171 ATF-45171 5965-8734E max 8734E	PDF
ATF-25735 Abstract: No abstract text available Text: 0.5–10 GHz General Purpose Gallium Arsenide FET Technical Data ATF-25735 Features • High Output Power: 19.0␣ Bm Typical P 1 dB at 4␣ GHz • High Gain: 12.5␣ dB Typical G 1 dB at 4 GHz • Low Noise Figure: 1.2 dB Typical at 4 GHz • Cost Effective Ceramic	Original	ATF-25735 ATF-25735 microns-24	PDF
hemt lnb Abstract: ATF36077-STR ATF-36077 Text: What mLliM HEWLETT* PACKARD 2-18 GHz Ultra Low Noise Pseudomorphic HEMT Technical Data ATF-36077 Features • PHEMT Technology • Ultra-Low Noise Figure: 0.5 dB Typical at 12 GHz 0.3 dB Typical at 4 GHz • High Associated Gain: 12 dB Typical at 12 GHz 17 dB Typical at 4 GHz	OCR Scan	ATF-36077 sATF-36077 ATF-36077-TRPl ATF-36077-STR hemt lnb ATF36077-STR	PDF
Transistor TT 2246 Abstract: 4747E Gm 3842 atf 36163 Low Noise Amplifier ATF-36163 ATF-36163-BLK ATF-36163-TR1 HEMT marking P Text: 1.5 – 18 GHz Surface Mount Pseudomorphic HEMT Technical Data ATF-36163 Features Surface Mount Package • Low Minimum Noise Figure: 1 dB Typical at 12 GHz 0.6 dB Typical at 4 GHz • Associated Gain: 9.4 dB Typical at 12 GHz 15.8 dB Typical at 4 GHz • Maximum Available Gain:	Original	ATF-36163 OT-363 SC-70) Transistor TT 2246 4747E Gm 3842 atf 36163 Low Noise Amplifier ATF-36163 ATF-36163-BLK ATF-36163-TR1 HEMT marking P	PDF
Transistor TT 2246 Abstract: 4747E TT 2246 transistor atf 36163 Low Noise Amplifier ATF-36163 ATF-36163-BLK ATF-36163-TR1 Text: 1.5 – 18 GHz Surface Mount Pseudomorphic HEMT Technical Data ATF-36163 Features Surface Mount Package • Low Minimum Noise Figure: 1 dB Typical at 12 GHz 0.6 dB Typical at 4 GHz • Associated Gain: 9.4 dB Typical at 12 GHz 15.8 dB Typical at 4 GHz • Maximum Available Gain:	Original	ATF-36163 OT-363 SC-70) 5965-4747E Transistor TT 2246 4747E TT 2246 transistor atf 36163 Low Noise Amplifier ATF-36163 ATF-36163-BLK ATF-36163-TR1	PDF
ATF-21170 Abstract: No abstract text available Text: 0.5– 6 GHz Low Noise Gallium Arsenide FET Technical Data ATF-21170 Features • Low Noise Figure: 0.9 dB Typical at 4␣ GHz • High Associated Gain: 13.0␣ dB Typical at 4␣ GHz • High Output Power: 23.0␣ dBm Typical P 1 dB at 4␣ GHz • Hermetic Gold-Ceramic	Original	ATF-21170 ATF-21170	PDF
ATF-45101 Abstract: No abstract text available Text: 2 – 8 GHz Medium Power Gallium Arsenide FET Technical Data ATF-45101 Features • High Output Power: 29.0␣ dBm Typical P 1 dB at 4␣ GHz • High Gain at 1dB Compression: 10.0␣ dB Typical G 1 dB at 4␣ GHz • High Power Efficiency: 38% Typical at 4␣ GHz	Original	ATF-45101 ATF-45101	PDF
Untitled Abstract: No abstract text available Text: mHHMPACKARD W tia i H E W L E T T 0 .5 - 6 GHz Low Noise Gallium Arsenide FET Technical Data ATF-21170 Features • Low Noise Figure: 0.9 dB Typical at 4 GHz • High A ssociated Gain: 13.0 dB Typical at 4 GHz • High Output Power: 23.0 dBm Typical P LdB at 4 GHz	OCR Scan	ATF-21170 ATF-21170 5965-8718E	PDF
ATF-46171 Abstract: No abstract text available Text: 2 – 10 GHz Medium Power Gallium Arsenide FET Technical Data ATF-46171 Features • High Output Power: 27.0␣ dBm Typical P 1 dB at 4␣ GHz • High Gain at 1 dB Compression: 11.0␣ dB Typical G 1 dB at 4␣ GHz • High Power Efficiency: 38% Typical at 4␣ GHz	Original	ATF-46171 ATF-46171	PDF

4 GHZ TRANSISTOR Search Results

4 GHZ TRANSISTOR Result Highlights (5)

4 GHZ TRANSISTOR Datasheets Context Search

transistor BF 697

mje 1303

Untitled

HXTR-5103

HXTR-2001

transistor GT 1083

ATF-21170

702 TRANSISTOR

ATF-25570

TRANSISTOR 12 GHZ

Untitled

ATF-36077

SN 74 868

Untitled

Untitled

5965-8734E

ATF-25735

hemt lnb

Transistor TT 2246

Transistor TT 2246

ATF-21170

ATF-45101

Untitled

ATF-46171