Untitled
Abstract: No abstract text available
Text: MCA002 MECHANICAL DATA Dimensions in mm inches MULTI CHIP ARRAY 4 COMMON SOURCE P-CHANNEL MOSFETS AND 4 COMMON SOURCE N-CHANNEL FETS DESCRIPTION The MCA002 is a ceramic surface mount MOSFET array designed for high reliability applications. It contains 4 common source P Channel and 4 N Channel
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MCA002
MCA002
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4AM12
Abstract: SP-10 Hitachi DSA0046
Text: 4AM12 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.075 , VGS = 10 V, I D = 4 A P-channel: RDS(on) ≤ 0.12 , VGS = –10 V, I D = –4 A • Capable of 4 V gate drive
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4AM12
SP-10
4AM12
SP-10
Hitachi DSA0046
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Hitachi DSA002723
Abstract: No abstract text available
Text: 6AM12 Silicon N-Channel/P-Channel Complementary Power MOS FET Array Application High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.17 , VGS = 10 V, I D = 4 A P-channel: RDS(on) ≤ 0.2 , VGS = –10 V, I D = –4 A • Capable of 4 V gate drive
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Original
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6AM12
SP-12TA
Hitachi DSA002723
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Hitachi DSA002727
Abstract: No abstract text available
Text: 4AM14 Silicon N-Channel/P-Channel Complementary Power MOS FET Array Application High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.17 , VGS = 10 V, I D = 4 A P-channel: RDS(on) ≤ 0.2 , VGS = –10 V, I D = –4 A • Capable of 4 V gate drive
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4AM14
SP-12TA
Hitachi DSA002727
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Hitachi 2SJ
Abstract: Hitachi DSA002751
Text: 4AM12 Silicon N-Channel/P-Channel Power MOS FET Array November 1996 Application High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.075 Ω, VGS = 10 V, ID = 4 A P-channel: RDS(on) ≤ 0.12 Ω, VGS = –10 V, ID = –4 A • Capable of 4 V gate drive
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4AM12
2SK971,
2SK1094
2SJ173,
2SJ176
SP-10
D-85622
Hitachi 2SJ
Hitachi DSA002751
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PDF
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Hitachi 2SJ
Abstract: Hitachi DSA002751
Text: 6AM12 Silicon N-Channel/P-Channel Complementary Power MOS FET Array November 1996 Application High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.17 Ω, VGS = 10 V, ID = 4 A P-channel: RDS(on) ≤ 0.2 Ω, VGS = –10 V, ID = –4 A
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Original
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6AM12
2SK970
O-220AB)
2SK1093
O-220FM)
2SJ172
2SJ175
Hitachi 2SJ
Hitachi DSA002751
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2SK109
Abstract: 6am12 2SJ172 2SJ175 2SK1093 2SK970
Text: 6AM12 Silicon N Channel/P Channel Complementary Power MOS FET Array Application SP-12TA High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.17 Ω, VGS = 10 V ID = 4 A P-channel: RDS (on) ≤ 0.2 Ω, VGS = –10 V ID = –4 A
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Original
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6AM12
SP-12TA
2SK970
O-220AB)
2SK1093
O-220FM)
2SJ172
2SJ175
2SK109
6am12
2SJ172
2SJ175
2SK1093
2SK970
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PDF
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6am12
Abstract: 2SJ172 2SJ175 2SK1093 2SK970 d3125
Text: 6AM12 Silicon N Channel/P Channel Complementary Power MOS FET Array Application SP-12TA High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.17 Ω, VGS = 10 V ID = 4 A P-channel: RDS (on) ≤ 0.2 Ω, VGS = –10 V ID = –4 A
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Original
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6AM12
SP-12TA
2SK970
O-220AB)
2SK1093
O-220FM)
2SJ172
2SJ175
6am12
2SJ172
2SJ175
2SK1093
2SK970
d3125
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PDF
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Hitachi 2SJ
Abstract: Hitachi DSA002751
Text: 4AM14 Silicon N-Channel/P-Channel Complementary Power MOS FET Array November 1996 Application High speed power switching Features • Low on-resistance N-channel: RDS on ² 0.17 ½, VGS = 10 V, ID = 4 A P-channel: RDS(on) ² 0.2 ½, VGS = –10 V, ID = –4 A
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Original
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4AM14
2SK970
O-220AB)
2SK1093
O-220FM)
2SJ172
2SJ175
Hitachi 2SJ
Hitachi DSA002751
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PDF
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Hitachi DSA002787
Abstract: No abstract text available
Text: 4AM12 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.075 Ω, VGS = 10 V, ID = 4 A P-channel: RDS(on) ≤ 0.12 Ω, VGS = –10 V, ID = –4 A • • • • •
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4AM12
Hitachi DSA002787
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PDF
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4AM16
Abstract: SP-12 Hitachi DSA0046
Text: 4AM16 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance N Channel: RDS on ≤ 0.17 , VGS = 10 V, I D = 4 A P Channel: RDS(on) ≤ 0.2 , VGS = –10 V, I D = –4 A • High speed switching
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4AM16
SP-12
4AM16
SP-12
Hitachi DSA0046
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Hitachi DSA002724
Abstract: No abstract text available
Text: 4AM11 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.17 , VGS = 10 V, I D = 2.5 A P-channel: RDS(on) ≤ 0.2 , VGS = –10 V, I D = –2.5 A • Capable of 4 V gate drive
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4AM11
SP-10
Hitachi DSA002724
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PDF
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Hitachi DSA002786
Abstract: No abstract text available
Text: 6AM12 Silicon N-Channel/P-Channel Complementary Power MOS FET Array Application High speed power switching Features • • • • • • Low on-resistance N-channel: RDS on ≤ 0.17 Ω, VGS = 10 V, ID = 4 A P-channel: RDS(on) ≤ 0.2 Ω, VGS = –10 V, ID = –4 A
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Original
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6AM12
Hitachi DSA002786
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PDF
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Hitachi 2SJ
Abstract: Hitachi DSA002751
Text: 4AM16 Silicon N-Channel/P-Channel Power MOS FET Array November 1996 Application High speed power switching Features • Low on-resistance N Channel: RDS on ≤ 0.17 Ω, VGS = 10 V, ID = 4 A P Channel: RDS(on) ≤ 0.2 Ω, VGS = –10 V, ID = –4 A • High speed switching
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Original
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4AM16
SP-12
D-85622
Hitachi 2SJ
Hitachi DSA002751
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PDF
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Hitachi DSA002724
Abstract: No abstract text available
Text: 6AM11 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.17 , VGS = 10 V, I D = 2.5 A P-channel: RDS(on) ≤ 0.2 , VGS = –10 V, I D = –2.5 A • Capable of 4 V gate drive
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Original
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6AM11
SP-12
Hitachi DSA002724
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PDF
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Untitled
Abstract: No abstract text available
Text: 4AM12 Silicon N-Channel/P-Channel Power MOS FET Array HITACHI November 1996 Application High speed power switching Features • • • • • • • Low on-resistance N-channel: RDS o1i < 0.075 ¿1, VGS= 10 V, ID= 4 A P-channel: RDS(o1i) < 0.12 ¿1, VGS= -10 V, ID= -4 A
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OCR Scan
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4AM12
2SK971,
2SK1094
2SJ173,
2SJ176
SP-10
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PDF
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NP24N06HLB
Abstract: NP24N06ILB MOS 6502
Text: PRELIMINARY PRODUCT INFORMATION M O S Field Effect PowerTransistor N P 2 4 N 0 6 H L B ,N P 2 4 N 0 6 1 L B SW ITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS in millimeter DESCRIPTION This product is N-Channel MOS Field Effect Transistor de
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OCR Scan
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NP24N06HLB
NP24N061LB
70mfi
90mi2
860pF
O-251
NP24N06ILB
O-252
MOS 6502
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PDF
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Untitled
Abstract: No abstract text available
Text: 6AM12 Silicon N-Channel/P-Channel Complementary Power MOS FET Array HITACHI November 1996 Application High speed power switching Features • Low on-resistance N-channel: RDS o1i < 0.17 ¿1, VGS = 10 V, ID= 4 A P-channel: RDS(o1i) < 0.2 Q, VGS= -10 V, ID= -A A
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OCR Scan
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6AM12
2SK970
T0-220AB)
2SK1093
T0-220FM)
2SJ172
TQ-220AB)
2SJ175
TQ-220FM)
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PDF
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IC-3328
Abstract: *PA1520H JUPA1520 MEI-1202 TEB-1035 MOS FET Array
Text: N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION PACKAGE DIMENSIONS The juPA1520 is N-channel Power MOS FET Array that built in 4 in millimeters circuits designed for solenoid, m otor and lamp driver. 26.8 MAX. 4.0 FEATURES • 4 V driving is possible
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OCR Scan
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uPA1520
10-Pin
JiPA1520H
IC-3328
*PA1520H
JUPA1520
MEI-1202
TEB-1035
MOS FET Array
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PDF
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TEA-1035
Abstract: IC-3345 UPA1552 UPA1552H MEI-1202 nec li ion
Text: N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION The juPA1552 is N-channel Power MOS FET Array that built in 4 circuits designed for solenoid, motor and lamp driver. FEATURES • 4 V driving is possible • Large Current and Low On-state Resistance
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OCR Scan
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uPA1552
PA1552H
IEI-1209)
TEA-1035
IC-3345
UPA1552H
MEI-1202
nec li ion
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PDF
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PA1556A
Abstract: No abstract text available
Text: 1 DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR fiPA1556A N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION The /iPA1556A is N-channel Power MOS FET Array that built in 4 circuits designed for solenoid, motor and lamp driver. FEATURES • 4 V driving is possible
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OCR Scan
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fiPA1556A
/iPA1556A
PA1556AH
IEI-1209)
PA1556A
PA1556A
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PDF
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1D47
Abstract: SD5501 SD5501N XSD5501 13G46
Text: N-Channel Depletion-Mode 4-Channel DMOS FET Array C U lO Q I C RPORATION SD5501 FEATURES DESCRIPTION • • • • The SD5501 is manufactured utilizing Calogic’s proprietary high speed, low capacitance DMOS process featuring an N-Channel depletion-mode design.
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OCR Scan
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SD5501
SD5501
16-pin
443S2
1D47
SD5501N
XSD5501
13G46
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PDF
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2SJ175 equivalent
Abstract: 2SJ172 2SJ175 2SK1093 2SK970 AM11 2SK109
Text: HITACHI 4AM11 SILICON N-CHANNEL/P-CHANNEL PO W E R MOS FET ARRAY HIGH SPEED POWER SWITCHING • FEA TU RES • Low Qn-Resistance N-channel; RDS Ion ^ 0.17 £?, V GS — 10 V. I0 - 2.5 A P-channel Ros o n )£ 0 .2 Q . VGS - -10 V, lD - -2.5 A Capable of 4 V Gate Drive
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OCR Scan
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2SK970,
2SK1093
2SJ172,
2SJ175
sp-10)
7a-25
2SK970
2SJ172
2SJ175 equivalent
2SJ172
2SJ175
2SK970
AM11
2SK109
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PDF
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Untitled
Abstract: No abstract text available
Text: 4AM16 Silicon N-Channel/P-Channel Power MOS FET Array HITACHI November 1996 Application High speed power switching Features • Low on-resistance N Channel: RDS o1i < 0.17 ¿1, VGS = 10 V, ID= 4 A P Channel: RDS(o1i) < 0.2 Q, V GS= -10 V, ID= -A A • High speed switching
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OCR Scan
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4AM16
SP-12
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PDF
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