4 AMP NPN DARLINGTON POWER TRANSISTORS Search Results

2N6724

Abstract: 6-725
Contextual Info: Silicon Planar Medium Power Transistors NPN 2N 6724 2N 6725 FEATURES • High gain - 25 00 0 @ 200mA - 4 0 0 0 @ 1A • 1 Amp current capability • Low saturation voltages DESCRIPTION A monolithic double diffused planar power Darlington encapsulated in the popular E-line

TL235

Abstract: D73FY4D1 D72FY4D1
Contextual Info: SURFACE-MOUNT D72FY4D1,2 NPN POWER DARLINGTON TRANSISTORS 80 VOLTS 4 AMP, 15 WATTS Designed for switching applications, ham m er drive, pulse motor drive applications, power amplifier applications. Features: CASE STYLE D-PAK • High DC Current Gain : hFE 1 = 2000(M in.) (V c E * 2V, lc = 1A)

2SD1536

Contextual Info: 7 0 2 0 = ^ OOOSfl^S 4 B R H n MDE D ROHM CO LTD h 7 > s ' X $ /Transistors 2SD1536M/2SD1861 - 2 S D i 5 3 S ^ f l NPN ^ 7 ^ 2 7 -2 9 y lJ = i> ? -lJ > l'> b 7 > v Z $ Power Amp. 2SD1861 Epitaxial Planar NPN Silicon Darlington Transistors • tt*

Contextual Info: h 7 > v X ^ / T ransistors 2S D 1661M 2 S D 1866 2SD1661M /2S D 1866 NPN '>U=I>7 ' - U > Y-> h 7 > v '7 7 4 ,^^J±iltlffl/Meclium Power Amp. Epitaxial Planar NPN Silicon Darlington Transistors M M \t;£@ /D im e n s io n s U n it: mm so->4V;VvlP-r • 1) □

Contextual Info: h "7 > V 7, $ / Transistors 2SD1379 7 V —^ 2SD1379 NPN '> ,J = l> $ '- ,J > b > h y > y Z 5 i Freq. Power Amp. Epitaxial Planar NPN Silicon Darlington Transistor • ^ J K r iiiU /D im e n s io n s U n it: mm VJ‘ > 4 V C V ’kJlT 1) ? - ' ) > h > S ^ T ' h FE T * 5

D40C4

Abstract: D40C7 NPN POWER DARLINGTON TRANSISTORS
Contextual Info: 3 8 7 5 0 Í ^ G E SOLID STATE ~~Ql 3075001 001^037 4 ^ J ~ VERY HIGH GAIN NPN POWER DARLINGTON TRANSISTORS T-33-29 D40C Series 30-50 VOLTS .5 AMP, 6.25 WATTS Designed fordriver, regulator, touch switch, I.C. driver, audio output,'relay substitute, oscillator, servo~ampllfier, and

Contextual Info: 2SD1809 N"7> V 7* $ /Transistors 2 SD 1809 X t f 2 '> T K Z f U - ^ * N PN *> y □ > ? - U > h > F 7 > v 7 $ 4 ,H 7 j i f lHiffl/Meclium Power Amp. Epitaxial Planar NPN Silicon Darlington Transistor • • ^•ffJ\t>i|S l/D im ensions U n it: mm 1) $ - ' ) >

2SC4895

Abstract: A13F
Contextual Info: h ÿ > v 7* $ / I ransistors 9 C C 4 8 Q 5 2SC4895 it ;^ ^ '> 7 ^ U - t lN P N v U 3 > h 7 > y X ^ ^ - U > h > ii Epitaxial Planar NPN Silicon Transistor (Darlington) 1£J§)j£iI2j*ilillffl/Low Freq. Power Amp. • £W2\f'>ilSI/Dimensions (Unit : mm) 1)

Contextual Info: 2SD1536M/2SD1861 h 7 > V ^ ^ / T ransistors I 2S D 1536M 2SD1861 N P y 'j3 > # -'J> b > t'7 > V Z $ N 4 l^ ^ J i i l iffl/M edium Power Amp. Epitaxial Planar NPN Silicon Darlington Transistors • #£ vr>jV;Vdi-r • ^ J fJ \t;ill/D im e n s io n s (U n it: mm

A 933 S transistors

Abstract: S T A 933 2SD1987
Contextual Info: 2SD1987 h 7 > y ^ ^ /T ra n s is to rs 2SD1987 h 7 > y X $ Epitaxial Planar NPN Silicon Transistor Darlington Freq. Power Amp. • • i+Jfi^ iilS l/D im en sion s (Unit : mm) 1) u ; • h > í í i & i ? ' h FE 10.0 *•? 2) I 'V - X 4. 5 r 5 -y z-« • Features

2SD2195

Contextual Info: h "7 > y / I ransistors 2SD2195 2SD 2195 X M$ * y 7 J\>-f Is - +MNPN V lJ □ > h 7 > V * 2 Epitaxial Planar NPN Silicon Transistor Darlington /M e d iu m Power Amp. • il-ffi rfi&H/Dimensions (U nit: mm) 1) IJ > h hFE 2) K fcrtK 3) A . - X • x = 4) Pc = 2 W T 'a fe 5

2SD1536

Contextual Info: b 7 > v 7s $ /Transistors 2SD1536M /2SD1861 7 IS —F B H P N v ' j 3 > h 7 > y ^ O C H 4 C O C M 2oD153oM ^-y>h>»« 2SD1861 Epitaxial Planar NPN Silicon Darlington Transistors * « * i | M i f f l / M e d l u m Power Amp. • W f ^ ä H / D i m e n s i o n s (Unit : mm)

2SD1783

Abstract: 2A 5v ZENER DIODE 60V transistor npn 2a FE2000
Contextual Info: Y - j s v T s * ? / Transistors 2SD1783 2S D 1783 I t N P N h> h ÿ > y 'z $ M M M M t J i ^ ^ F S / L o w Freq. Power Amp. Epitaxial Planar NPN Silicon Darlington Transistor • W fé\f">£ /D im en siô n s Unit : mm S ir > J V ;V ^ T 1) =1 K 7 ^ • /K‘-7 .^ tC 6 0 V C 0 'y x ± 4. 5±0.2

SK3180

Abstract: SK3181A SK3220 SK3183A SK3219 SK3197 SK3182 SK3188A SK3191 SK3201
Contextual Info: THOMSON/ DISTRIBUTOR BIPOUR TRANSISTORS SäE D • T05t.â?3 0 0 0 4 0 1 7 Obi ■ TCSK cw t . Maximum Ratings TCE Type Breakdown Voltages Device Polarity & Material Application Ccomplementary device type SK3179B Device Power Dissipata Collector Current

SK3893

Abstract: sk3896 SK3936 SK3935 SK3862 SK3865A SK93 sk3948 SK3897 sk3895
Contextual Info: •^THOflSON/ K B DISTRIBUTOR BIPOLAR TRANSISTORS SflE D cont ■ . =105^073 0 0 0 4 5 5 5 13fl ■ TCSK Maximum Ratings TCE Type Device Polarity & Material Breakdown Voltages Application Ccomplementary device type Device Power Dissipata Collector Current

MJ10004

Abstract: MJ-10004 OB 2268 darlington power transistor 10a
Contextual Info: MJ10004 Darlington Power Transistor Switchmode series NPN Silicon Power Darlington Transistors with Base-Emitter speedup diode are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line

2N3773 NPN Audio Power AMP Transistor

Abstract: 2N5192 BD441 mje15034 mj150* darlington transistor MJ15025 transistor Mj21194 TIP2955 application note MJ31193 mjl4281 MJE18006
Contextual Info: BIPOLAR POWER TRANSISTORS SELECTOR GUIDE SELECTION BY PACKAGE IC Range Amps VCE Range (Volts) PD (Watts) SO−8 3.0 30 2.0 (Note 2) SOT−223 0.5−3.0 30 2.0 (Note 1) DPAK 0.5-10 40-450 12.5-25 D2PAK 5.0−15 80−450 50−75 DPAK 0.5-10 40-450 12.5-25

power transistors cross reference

Abstract: motorola AN485 transistor master replacement guide buv18a motorola bipolar transistor GUIDE electronic ballast with MJE13003 mj150* darlington BUV488 mje15033 replacement bd135 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: Bipolar Power Transistors In Brief . . . Motorola’s broad line of Bipolar Power Transistors includes discrete and Darlington transistors in a variety of packages from the popular surface mount DPAK at 1.75 watts to the 250 watt TO-3 and TO–264. New products

mj10021

Abstract: ob 2268 60 amp npn darlington power transistors MJ1002
Contextual Info: MJ10021 Darlington Power Transistor NPN silicon power darlington transistors with Base-Emitter speedup diode are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications.

automotive ignition tip162

Abstract: TIP162 npn darlington transistor 150 watts F 9016 transistor TO-247 NPN SILICON POWER TRANSISTORS DARLINGTON TIP162A tip16
Contextual Info: TIP162 Darlington Power Transistor NPN Silicon Power Darlington Transistors are designed for use in automotive ignition, switching and motor control applications. Features: • Collector-Emitter Sustaining Voltage VCEO sus = 380V (Minimum). • Collector-Emitter Saturation Voltage

100 amp npn darlington power transistors

Abstract: NTE290A NTE123AP IC 741 amp 10 amp npn darlington power transistors NTE159 NTE2395 nte199 100 amp darlington power transistors power transistor CURRENT SWITCH 0.5 1 AMP
Contextual Info: 1995-2012.qxp:QuarkCatalogTempNew 9/11/12 8:56 AM Page 1995 25 Transistors and MOSFETs Silicon Bipolar Transistors Collector to Base V Collector to Emitter (V) Emitter to Base (V) Typical Fwd. Current Gain NPN NPN NPN NPN NPN NPN NPN NPN NPN 0.5 15.0 4.0

SK3858

Abstract: SK3854 SK3466 SK3747 SK3836 SK3718 SK3839 SK3861 SK3859 SK3722
Contextual Info: THOriSON/ D I S T R I B U T O R SflE D ÏI] com. BIPOLAR TRANSISTORS • T05bfl?3 0 0 0 4 5 5 3 3fc.S ■ TCSK Maximum Ratings TCE Type Device Polarity & Material Breakdown Voltages Application ‘complementary device type SK3715 PNP/Si *SK3275 AF Driver & Output Stage, FM Brdcst Band

Contextual Info: BI-POLAR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain Maximum Collector Power Dissipation (Watts) Typical Freq. (MHz) Case Style Diag. No. Maximum Collector Current (Amps) BVCeo BVEbo

power switching 10 amp 60V

Abstract: MJ10012 MJ1001 8805 VOLTAGE REGULATOR 100 amp npn darlington power transistors NPN DARLINGTON 10A 400V npn darlington transistor 150 watts MJ-10012 npn darlington transistor 200 watts
Contextual Info: MJ10012 Darlington Power Transistor NPN Silicon Power Darlington Transistors is a high-voltage, high-current transistor, designed for automotive ignition, switching regulator and motor applications. Features: • Continuous Collector Current - IC = 10A. • Collector-Emitter Sustaining Voltage VCEO sus = 400V (Minimum).