qfn 3x3 tray dimension
Abstract: XL1007-QT-0G0T mimix amplifier L1007 XL1007-QT XL1007-QT-0G00 XL1007-QT-EV1
Text: 3.5-8.0 GHz GaAs MMIC Packaged Low Noise Amplifier August 2007 - Rev 08-Aug-07 L1007-QT Features 12 dB Gain 2 dB Noise Figure 3x3 QFN Package Single Power Supply 3-5 V, 40 mA Self Bias On-Chip ESD Protection Circuit Description Mimix Broadband’s 3.5 to 8.0 GHz low noise
|
Original
|
08-Aug-07
L1007-QT
XL1007-BD-000X
qfn 3x3 tray dimension
XL1007-QT-0G0T
mimix amplifier
L1007
XL1007-QT
XL1007-QT-0G00
XL1007-QT-EV1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 3.5-8.0 GHz GaAs MMIC Packaged Low Noise Amplifier August 2007 - Rev 08-Aug-07 L1007-QT Features 12 dB Gain 2 dB Noise Figure 3x3 QFN Package Single Power Supply 3-5 V, 40 mA Self Bias On-Chip ESD Protection Circuit Description Mimix Broadband’s 3.5 to 8.0 GHz low noise
|
Original
|
08-Aug-07
L1007-QT
XL1007-BD-000X
|
PDF
|
XL1007-QT-0G0T
Abstract: L1007 XL1007-QT XL1007-QT-0G00 XL1007-QT-EV1
Text: 3.5-8.0 GHz GaAs MMIC Packaged Low Noise Amplifier February 2007 - Rev 08-Feb-07 L1007-QT Features 12 dB Gain 2 dB Noise Figure 3x3 QFN Package Single Power Supply 3-5 V, 40 mA Self Bias On-Chip ESD Protection Circuit Description Mimix Broadband’s 3.5 to 8.0 GHz low noise
|
Original
|
08-Feb-07
L1007-QT
XL1007-BD-000X
XL1007-QT-0G0T
L1007
XL1007-QT
XL1007-QT-0G00
XL1007-QT-EV1
|
PDF
|
XL1007-QT-0G0T
Abstract: XL1007-QT-EV1 XL1007-QT XL1007-QT-0G00
Text: 3.5-8.0 GHz GaAs MMIC Packaged Low Noise Amplifier February 2009 - Rev 20-Feb-09 L1007-QT Features 12 dB Gain 2 dB Noise Figure 3x3 QFN Package Single Power Supply 3-5 V, 40 mA Self Bias On-Chip ESD Protection Circuit Description Mimix Broadband’s 3.5 to 8.0 GHz low noise
|
Original
|
20-Feb-09
L1007-QT
XL1007-BD-000X
XL1007-QT-0G0T
XL1007-QT-EV1
XL1007-QT
XL1007-QT-0G00
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 3.5-8.0 GHz GaAs MMIC Packaged Low Noise Amplifier August 2007 - Rev 08-Aug-07 L1007-QT Features 12 dB Gain 2 dB Noise Figure 3x3 QFN Package Single Power Supply 3-5 V, 40 mA Self Bias On-Chip ESD Protection Circuit Description Mimix Broadband’s 3.5 to 8.0 GHz low noise
|
Original
|
08-Aug-07
L1007-QT
XL1007-BD-000X
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 3.5-8.0 GHz GaAs MMIC Packaged Low Noise Amplifier August 2006 - Rev 29-Aug-06 L1007-QT Features 12 dB Gain 2 dB Noise Figure 3x3 QFN Package Single Power Supply 3-5 V, 40 mA Self Bias On-Chip ESD Protection Circuit Description Mimix Broadband’s 3.5 to 8.0 GHz low noise amplifier is
|
Original
|
29-Aug-06
L1007-QT
XL1007-BD-000X
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 3.5-8.0 GHz GaAs MMIC Packaged Low Noise Amplifier November 2006 - Rev 28-Nov-06 L1007-QT Features 12 dB Gain 2 dB Noise Figure 3x3 QFN Package Single Power Supply 3-5 V, 40 mA Self Bias On-Chip ESD Protection Circuit Description Mimix Broadband’s 3.5 to 8.0 GHz low noise amplifier is
|
Original
|
28-Nov-06
L1007-QT
XL1007-BD-000X
|
PDF
|
DIELECTRIC COAXIAL RESONATOR
Abstract: Epcos coaxial resonators
Text: Gurtung und Verpackung Taping and Packing Koaxialresonatoren und dielektrische Resonatoren werden standardmäßig in Paletten geliefert. Lieferung im Gurt auf Anfrage. Gurtung und Rollenverpackung entsprechen den Vorschriften von DIN IEC 286, Teil 3. Coaxial and dielectric resonators are supplied in trays, if not
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RMPA2265 Dual Band WCDMA Power Edge Power Amplifier Module 1850 to 1910 MHz and 1920 to 1980 MHz Features General Description • Single positive-supply operation and low power and shutdown modes The RMPA2265 power amplifier module PAM is designed for
|
Original
|
RMPA2265
|
PDF
|
SSG 23 TRANSISTOR
Abstract: CDMA2000-1X ECJ-1VB1H102K RMPA1965 grm39
Text: RMPA1965 US-PCS CDMA, CDMA2000-1X and WCDMA PowerEdge Power Amplifier Module Features General Description • Single positive-supply operation with low power and shutdown modes The RMPA1965 power amplifier module PAM is designed for CDMA, CDMA2000-1X, WCDMA and HSDPA personal communications system (PCS) applications. The 2 stage PAM is internally matched to 50Ω to minimize the use of external
|
Original
|
RMPA1965
CDMA2000-1X
RMPA1965
CDMA2000-1X,
SSG 23 TRANSISTOR
ECJ-1VB1H102K
grm39
|
PDF
|
tray qfn 6x6
Abstract: tqfp 7x7 tray QFN tray 5x5 QFN tray QFn Package tray QFN tray qfn 4x4 QFN tray 4x4 LQFP Package tray 6x6 TRAY tray QFN 5x5
Text: Supertex Packaging Specifications Suffix Package Type B1 B2 FB FG FG FG FG GA GA K1 K1 K2 K4 K4 K5 K6 K6 K6 K6 K6 K6 K6 K6 K6 K6 K7 K7 K7 K7 K7 K7 LG L / LL MG MG N2 N3 N3 N5 N8 NG NG P P P P PG PG PG PG PJ PJ PJ SG T TG WG WG WG WG 26L BCC 84L BCC+ 64B FCBGA
|
Original
|
O-236AB
OT-23)
OT-23
O-220
O-252
OT-223
QFN00/Reel
490/Tray
tray qfn 6x6
tqfp 7x7 tray
QFN tray 5x5
QFN tray
QFn Package tray
QFN tray qfn 4x4
QFN tray 4x4
LQFP Package tray
6x6 TRAY
tray QFN 5x5
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RMPA1967 US-PCS CDMA, CDMA2000-1X and WDCMA Power Edge Power Amplifier Module Features General Description • Single positive-supply operation and low power and shutdown modes The RMPA1967 power amplifier module PAM is designed for CDMA, CDMA2000-1X, WCDMA and HSDPA personal communications system (PCS) applications. The 2-stage PAM is internally matched to 50 Ohms to minimize the use of external
|
Original
|
RMPA1967
CDMA2000-1X
CDMA2000-1XRTT/WCDMA
RMPA1965
CDMA2000-1X,
|
PDF
|
xg1015-SE
Abstract: XB1013-qt CMM6001-BD CFP0103-SP CMM6004-BD XZ1003-QT XU1016 QH XP1073-BD XD1008-QH XP1035-BD
Text: Sales Contact Information NORTH AMERICA COLORADO, UTAH USA ALABAMA, FLORIDA, GEORGIA, MISSISSIPPI, NORTH CAROLINA, SOUTH CAROLINA,TENNESSEE, Electronic Marketing Associates EMA 919-847-8800 rdenny@emarep.com Alabama Office 256-880-8050 djones@emarep.com
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: austriamicrosystems AG is now ams AG The technical content of this austriamicrosystems datasheet is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 0 3136 500 0 e-Mail: ams_sales@ams.com
|
Original
|
AS1747,
AS1748,
AS1749,
AS1750
AS1749
AS1750
|
PDF
|
|
|
capacitor 226 20V
Abstract: ECJ-1VB1H102K RMPA2265 SN63 SN96
Text: RMPA2265 Dual Band WCDMA Power Amplifier Module 1850 to 1910 MHz and 1920 to 1980 MHz General Description Features The RMPA2265 power amplifier module PAM is designed for WCDMA applications in both the 1850–1910 and 1920– 1980 MHz bands. The 2 stage PAM is internally matched to
|
Original
|
RMPA2265
RMPA2265
capacitor 226 20V
ECJ-1VB1H102K
SN63
SN96
|
PDF
|
ECJ-1VB1H102K
Abstract: RMPA2265 SN63
Text: RMPA2265 Dual Band WCDMA Power Edge Power Amplifier Module 1850 to 1910 MHz and 1920 to 1980 MHz Features General Description • Single positive-supply operation and low power and shutdown modes ■ 42% WCDMA efficiency at +28 dBm average output power
|
Original
|
RMPA2265
RMPA2265
ECJ-1VB1H102K
SN63
|
PDF
|
AS1748
Abstract: TDFN 3x3 10 pins marking ASPV AS1747 marking ASPV 10pin BTM marking AS1750 AS1749 Dual SPDT Switches
Text: Data sheet AS1747, AS1748, AS1749, AS1750 L o w - Vo l ta g e , D u a l S P D T, Au d i o C l i c k l e s s S w i t c h e s w i t h N e g a t i v e R a i l C a pa b i l i t y 1 General Description 2 Key Features The SPDT single-pole/double-throw switches AS1747,
|
Original
|
AS1747,
AS1748,
AS1749,
AS1750
AS1748/AS1750)
AS1749/AS1750)
-90dB
100kHz)
-65dB
AS1748
TDFN 3x3 10 pins
marking ASPV
AS1747
marking ASPV 10pin
BTM marking
AS1750
AS1749
Dual SPDT Switches
|
PDF
|
qfn 3x3 tray dimension
Abstract: PEAK TRAY QFN 4x4 QFN tray qfn 4x4 qfn 3x3 tray dimension peak PEAK TRAY qfn 4 x 4 JEDEC qfn tray QFN tray 4x4 QFN tray 3x3 qfn 4x4 tray dimension F QFN 3X3
Text: AS1357 D a ta S he e t P r o g r a m m a b l e Tr i p l e L D O 1 General Description 2 Key Features ! 3 Independent Voltage Regulators with Shutdown ! Output Current: 200mA each LDO ! One Time Programmable Output Voltage User- or Factory-Trimmed ! Programmable Output Voltage Range: 1.8 to 3.3V in
|
Original
|
AS1357
200mA
100kHz
200mA
qfn 3x3 tray dimension
PEAK TRAY QFN 4x4
QFN tray qfn 4x4
qfn 3x3 tray dimension peak
PEAK TRAY qfn 4 x 4
JEDEC qfn tray
QFN tray 4x4
QFN tray 3x3
qfn 4x4 tray dimension
F QFN 3X3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RMPA2265 Dual Band WCDMA Power Edge Power Amplifier Module 1850 to 1910 MHz and 1920 to 1980 MHz Features General Description • Single positive-supply operation and low power and shutdown modes ■ 42% WCDMA efficiency at +28 dBm average output power
|
Original
|
RMPA2265
192nge
|
PDF
|
Untitled
Abstract: No abstract text available
Text: austriamicrosystems AG is now ams AG The technical content of this austriamicrosystems datasheet is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 0 3136 500 0 e-Mail: ams_sales@ams.com
|
Original
|
AS1357
AS1357
|
PDF
|
JEDEC TRAY DIMENSIONS
Abstract: JEDEC tray standard JEDEC tray standard 490
Text: TRAY CONTAINER 3.35 8.80 7.90 3.35 135° C MAX. A' 9.20 8.15 FBGA3 x 3ESP A NEC 119.6 135.9 PPE 14 × 35=490 UNIT : mm 299.2 315.0 322.6 SECTION A-A' 3.35 5.62 (6.07) 7.62 3.00 Applied Package Quantity (pcs) 25-pin Plastic FLGA (3×3) 490 MAX. Tray FBGA3×3 ESP
|
Original
|
25-pin
SSD-A-H7649
JEDEC TRAY DIMENSIONS
JEDEC tray standard
JEDEC tray standard 490
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RMPA2265 Dual Band WCDMA Power Edge Power Amplifier Module 1850 to 1910 MHz and 1920 to 1980 MHz Features General Description • Single positive-supply operation and low power and shutdown modes ■ 42% WCDMA efficiency at +28 dBm average output power
|
Original
|
RMPA2265
RMPA2265
|
PDF
|
SMD LTYN
Abstract: ic 4440 40w amplifier 12v ltls e3 Weston 2281 thermometer LT3060ITS8 Transistor SR 6863 TO-126 LTC3855EUH-1 LTPG e3 5Dx diode SMD LTABA
Text: November 2009 Product Selection Guide Amplifiers Data Converters Linear Regulators Switching Regulators µModule DC/DC Converters Battery Chargers LED Drivers Hot Swap Interface Filters RF/Wireless Silicon Oscillators Comparators Supervisory Circuits References
|
Original
|
D-59387
D-73230
1-800-4-LINEAR
SMD LTYN
ic 4440 40w amplifier 12v
ltls e3
Weston 2281 thermometer
LT3060ITS8
Transistor SR 6863 TO-126
LTC3855EUH-1
LTPG e3
5Dx diode SMD
LTABA
|
PDF
|
lm 7803 3V Positive Voltage Regulator
Abstract: ic 4440 40w amplifier 12v ltsx e3 mt 1389 de LM 4440 AUDIO AMPLIFIER CIRCUIT w10 mic package bridge rectifier PF08109B smd code marking 162 sot23-5 ul 1741 grid te inverter datasheet ltqt e3
Text: May 2009 Product Selection Guide Amplifiers Data Converters Linear Regulators Switching Regulators µModule DC/DC Converters Battery Chargers LED Drivers Hot Swap Interface Filters High Frequency Silicon Oscillators Comparators P Supervisor References Reference
|
Original
|
D-59387
D-73230
1-800-4-LINEAR
lm 7803 3V Positive Voltage Regulator
ic 4440 40w amplifier 12v
ltsx e3
mt 1389 de
LM 4440 AUDIO AMPLIFIER CIRCUIT
w10 mic package bridge rectifier
PF08109B
smd code marking 162 sot23-5
ul 1741 grid te inverter datasheet
ltqt e3
|
PDF
|
