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    KEMET Corporation C0603X101K5GACAUTO

    CAP CER 100PF 50V C0G/NP0 0603
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    DigiKey C0603X101K5GACAUTO Cut Tape 41,770 1
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    C0603X101K5GACAUTO Digi-Reel 41,770 1
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    C0603X101K5GACAUTO Reel 40,000 4,000
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    Avnet Abacus C0603X101K5GACAUTO Reel 11 Weeks 4,000
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    KEMET Corporation C0603X101K5HACAUTO

    CAP CER 0603 100PF 50V ULTRA STA
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    DigiKey C0603X101K5HACAUTO Cut Tape 35,443 1
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    C0603X101K5HACAUTO Digi-Reel 35,443 1
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    C0603X101K5HACAUTO Reel 28,000 4,000
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    KEMET Corporation C0603X101J1HACAUTO

    CAP CER 0603 100PF 100V ULTRA ST
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    DigiKey C0603X101J1HACAUTO Cut Tape 7,975 1
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    C0603X101J1HACAUTO Digi-Reel 7,975 1
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    C0603X101J1HACAUTO Reel 4,000 4,000
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    Avnet Abacus C0603X101J1HACAUTO Reel 11 Weeks 12,000
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    KEMET Corporation C0603X101J3GACAUTO

    CAP CER 100PF 25V C0G/NP0 0603
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    DigiKey C0603X101J3GACAUTO Reel 4,000 4,000
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    Newark C0603X101J3GACAUTO Cut Tape 310 10
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    KEMET Corporation C0603X101F5GACAUTO

    CAP CER 100PF 50V C0G/NP0 0603
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    DigiKey C0603X101F5GACAUTO Digi-Reel 3,965 1
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    C0603X101F5GACAUTO Cut Tape 3,965 1
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    Mouser Electronics C0603X101F5GACAUTO 11,534
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    3X101 Datasheets Context Search

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    induction furnace circuit diagram

    Abstract: INCOMING RAW MATERIAL INSPECTION REPORT FOR COLD FORGING
    Text: THE ELECTROMAGNET Visible Micro Gamma Rays Wavelength Frequency, Hz: 0.1Å X-Rays U.V. Infrared EHF 10Å 100Å 0.1µ 1Å 1µ 10µ 100µ 0.1cm 1cm 3x1019 3x1018 3x1017 3x1016 3x1015 3x1014 3x1013 3x1012 3x1011 3x1 cycles per second VISIBLE SHORT WAVELENGTH


    Original     		3x1019 3x1018 3x1017 3x1016 3x1015 3x1014 3x1013 3x1012 3x1011 induction furnace circuit diagram INCOMING RAW MATERIAL INSPECTION REPORT FOR COLD FORGING PDF

    pin configuration of ic TL084

    Abstract: Instrumentation Amplifier IC with tl084 AD713 band pass TL074 top octave generator TL084 DATA SHEET AD711 AD712 LF347 TL084
    Text: a Quad Precision, Low Cost, High Speed, BiFET Op Amp AD713 FEATURES Enhanced Replacement for LF347 and TL084 CONNECTION DIAGRAMS AC PERFORMANCE 1 ms Settling to 0.01% for 10 V Step 20 V/ms Slew Rate 0.0003% Total Harmonic Distortion THD 4 MHz Unity Gain Bandwidth


    Original     		AD713 LF347 TL084 AD713K) 14-Bit AD711, AD712 16-Pin pin configuration of ic TL084 Instrumentation Amplifier IC with tl084 AD713 band pass TL074 top octave generator TL084 DATA SHEET AD711 AD712 TL084 PDF

    C1383 NPN transistor collector base and emitter

    Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
    Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,


    Original     		10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383 PDF

    IN4626

    Abstract: 300PA20 photodiode has capacitance of 5pf. bandwidth 650NM photodetector 5.6v zener OPT210P 650NM photodiode 650NM photodiode 40 kilohertz IN462 silicon photodiode
    Text: OPT210 FPO MONOLITHIC PHOTODIODE AND AMPLIFIER 300kHz Bandwidth at RF = 1MΩ FEATURES DESCRIPTION ● BOOTSTRAP ANODE DRIVE: Extends Bandwidth: 900kHz RF = 100KΩ Reduces Noise ● LARGE PHOTODIODE: 0.09" x 0.09" The OPT210 is a photodetector consisting of a high


    Original     		OPT210 300kHz 900kHz OPT210 650nm) IN4626 300PA20 photodiode has capacitance of 5pf. bandwidth 650NM photodetector 5.6v zener OPT210P 650NM photodiode 650NM photodiode 40 kilohertz IN462 silicon photodiode PDF

    450 nm

    Abstract: 8436 8439 BPV10
    Text: BPV10 Vishay Semiconductors Silicon PIN Photodiode Description 94 8390 BPV10 is a very high speed and high sensitive PIN photodiode in a standard T–1¾ plastic package. Due to its waterclear epoxy the device is sensitive to visible and infrared radiation.


    Original     		BPV10 BPV10 78mm2 D-74025 20-May-99 450 nm 8436 8439 PDF

    XG404

    Abstract: DB10 DS3595-5 ds35954 DS3595
    Text: 54HSC/T630 54HSC/T630 Radiation hard 16-Bit ParallelError Detection & Correction Replaces June 1999 version, DS3595-4.0 DS3595-5.0 January 2000 The 54HSC/T630 is a 16-bit parallel Error Detection and Correction circuit. It uses a modified Hamming code to generate a 6-bit check word from each 16-bit data word. The


    Original     		54HSC/T630 16-Bit DS3595-4 DS3595-5 54HSC/T630 22-bit XG404 DB10 ds35954 DS3595 PDF

    PDB-C112

    Abstract: AMP CONNECTOR blue photodiode wavelength BNC/CONNECTOR BNC
    Text: PHOTONIC Silicon Photodiode, Blue Enhanced Photoconductive Type PDB-C112 DETECTORS INC. PACKAGE DIMENSIONS inch mm 0.175 [4.45] 0.073 [1.85] PHOTODIODE ACTIVE SURFACE TO TOP OF WINDOW PWB WINDOW Ø0.975 [Ø24.77] Ø0.4447 [Ø11.295] ACTIVE AREA (100 mm )


    Original     		PDB-C112 3x10-13 100-PDB-C112 PDB-C112 AMP CONNECTOR blue photodiode wavelength BNC/CONNECTOR BNC PDF

    6030-S

    Abstract: BPV10 diode detector x band
    Text: BPV 10 TELEFUNKEN Semiconductors Silicon PIN Photodiode Description BPV10 is a very high speed and high sensitive PIN photodiode in a standard T–1¾ plastic package. Due to its waterclear epoxy the device is sensitive to visible and infrared radiation. 94 8390


    Original     		BPV10 78mm2 D-74025 6030-S diode detector x band PDF

    Untitled

    Abstract: No abstract text available
    Text: CFPO-2 H: Ultra Low Phase Noise & High Stability OCXO Outline in mm - scale 1:3 - Package 50B ISSUE 4; 1 SEPTEMBER 2001 Description • 50.8SQ max Ultra low phase noise and high stability OCXO 1 Package Outlines ■ 50.8 x 50.8 × 38.0mm (50B) ■ 67.0 × 60.0 × 40.0mm (67A)


    Original     		700mA 250mA 50B-12 1920MHz 50ppm/ PDF

    BPV10NF

    Abstract: No abstract text available
    Text: TELEFUNKEN Semiconductors BPV 10 NF High Speed Silicon PIN Photodiode Description BPV10NF is a high sensitive and wide bandwidth PIN photodiode in a standard T–1¾ plastic package. The black epoxy is an universal IR filter, spectrally matched to GaAs l=950nm and


    Original     		BPV10NF 950nm) 870nm) 78mm2 D-74025 PDF

    BPV10NF

    Abstract: 8436 TSSF4500
    Text: BPV10NF High Speed Silicon PIN Photodiode Description BPV10NF is a high sensitive and wide bandwidth PIN photodiode in a standard T–1¾ plastic package. The black epoxy is an universal IR filter, spectrally matched to GaAs l=950nm and GaAlAs (l=870nm) IR emitters.


    Original     		BPV10NF BPV10NF 950nm) 870nm) 78mm2 D-74025 15-Jul-96 8436 TSSF4500 PDF

    Untitled

    Abstract: No abstract text available
    Text: CFPO-3: High Stability OCXO ISSUE 1; 1 SEPTEMBER 2001 Marking Includes Description • Model number including options ■ Frequency ■ Serial Number ■ Date Code (Year/Week) ■ Single Oven high stability OCXO Package Outlines ■ 50.8 x 50.8 × 38.0mm (50C)


    Original     		3840MHz 50ppm/ PDF

    Untitled

    Abstract: No abstract text available
    Text: VFOV302 OCXO – STRATUM 2 Compliant HCMOS / SINE WAVE Features    RoHS Status Standard frequencies: 10MHz, 12.8MHz ± 0.1 ppb frequency stability over temperature Ultra low jitter and phase noise Applications     Telecommunication Systems


    Original     		VFOV302 10MHz, 10kOhms 50ppb 30ppb 1x10-9 5x10-10 3x10-10 2x10-10 1x10-10 PDF

    9107

    Abstract: C30810
    Text: Select Products Here TOX 9107 Silicon PIN Photodetector Go DESCRIPTION FEATURES The TOX 9107 is a large area, broad band detector application for both military and commercial users including HeNe and GaAs laser systems for range finding, data transmission plus both switching and


    Original     		300nm 100mm² C30810 3x10-13 5x10-13 com/catalog/tox9107/tox9107 9107 C30810 PDF

    Untitled

    Abstract: No abstract text available
    Text: BPV10 VISHAY Vishay Semiconductors Silicon PIN Photodiode Description BPV10 is a very high speed and high sensitive PIN photodiode in a standard T-1¾ plastic package. Due to its waterclear epoxy the device is sensitive to visible and infrared radiation. Features


    Original     		BPV10 BPV10 78mm2 D-74025 24-Mar-04 PDF

    ocxo mv89

    Abstract: MV89 8.192 Mc 2X101 9243 a STABILITY
    Text: 13a, KIMa Ave., St.Petersburg,199155, RUSSIA. Tel:+7-812-350-9243; 350-4461. Fax:+7-812-350-7290. http://www.morion.com.ru E-mail: sale@morion.com.ru DOUBLE OVEN ULTRA HIGH STABILITY PRECISION OCXO MV89 Features: • High stability vs. temperature - up to ±5x10-11


    Original     		5x10-11 1x10-10 2x10-10 3x10-10 5x1080 5x10-8/year 5x10-10/day; 3x10-8/year 3x10-10/day; ocxo mv89 MV89 8.192 Mc 2X101 9243 a STABILITY PDF

    mm 13a

    Abstract: No abstract text available
    Text: PRELIMINARY Features: INFORMATION • Very short warm-up time – less than 45 seconds Research and Development • Frequency stability vs. temperature - up to ±3x10-8 Stage • Low profile package with height of 16 mm • Low power consumption Nominal frequency: 10 MHz


    Original     		3x10-8 5x10-8 1x10-7 3x10-7/year 2x10-7/year mm 13a PDF

    induction cooker fault finding diagrams

    Abstract: enamelled copper wire swg table AC digital voltmeter using 7107 wiring diagram IEC320 C14 Inlet Male Power Socket Fuse Switch db 3202 diac siemens mkl capacitor YY63T varta CR123A HXD BUZZER lt700 transformer
    Text: 03front order p1_3 1/29/02 3:01 PM C3 Page 1 components cables & connectors actives 18 57 semiconductors optoelectronics passives contents 72 81 87 91 capacitors resistors transformers, ferrites & inductors emc, filters & suppression electromechanical 92 120


    Original     		03front induction cooker fault finding diagrams enamelled copper wire swg table AC digital voltmeter using 7107 wiring diagram IEC320 C14 Inlet Male Power Socket Fuse Switch db 3202 diac siemens mkl capacitor YY63T varta CR123A HXD BUZZER lt700 transformer PDF

    tr c110

    Abstract: PDB-C110
    Text: Blue Enhanced Photoconductive Silicon Photodiode PDB-C110 .084 [2.13] .076 [1.93] ±.005 [0.13] .053 [1.35] PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] ANODE INDEX 2X Ø.017 [0.43] ANODE 120° VIEWING ANGLE .657 [16.69] .643 [16.33] .484 [12.29]


    Original     		PDB-C110 PDB-C110 tr c110 PDF

    TO-37

    Abstract: lead selenide "temperature controller" D-10
    Text: 03E 00025 fiqft4348 NE W E NG LAN D NEW ENGLAND 03 N.E.P. D D ^ | b S b M B 4 û DODODES Q | ~ NEW ENGLAND PHOTOCONDUCTOR SERIES - D, D2, G, G2 THERMOELECTRICALLY COOLED LEAD SELENIDE LEAD SULFIDE Electrical D* Peak, 750,1 Resistance Megohms Wavelength Cut-off (Microns


    OCR Scan     		2x1011 5x1011 3x1011 7x109 1x1010 5x1010 O-51STAGE TO-37 lead selenide "temperature controller" D-10 PDF

    TDC1010

    Abstract: "multiplier accumulator" TSX-11 16x16 multiplier tsl-3 IDT7210 ma7010 Marconi radiation hard
    Text: MA7010 Marconi Electronic Devices D. + . u. .on ^ a r . ^ A ccum u|ator Signal S lic e T M APPLICATIO NS FEATU RES • Radiation Hard To 1 MRad (Si) • Fast Fourier transform processing • H igh SEU im m unity, Latch-up free • Array processing • Silicon-on-Sapphire technology


    OCR Scan     		IDT7210 TDC1010 MA7010 16x16 MIL-M-38510 "multiplier accumulator" TSX-11 16x16 multiplier tsl-3 ma7010 Marconi radiation hard PDF

    G5832

    Abstract: No abstract text available
    Text: Spectral Response 0.7 to 1.7 |iim • Spectral Response • Dark Current vs. Reverse Voltage • Terminal Capacitance vs. Reverse Voltage Typ.Ta=25’C.1=1MHz 0.6 0.8 1.0 1.2 1.4 1.6 1.8 WAVELENGTH (/im ) 2.0 1 0 -' The cut-off wavelengths of the TE-cooled de­


    OCR Scan     		KIRD80039EA P3226-02 P394A, P3207-04 P791-11 P4115 P3981-01, K3413-01, K1713-01, KIRDA0041EA G5832 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS KOM 2045 8-CHIP SILICON PHOTODIODE ARRAY VERY LOW DARK CURRENT FEATURES • Silicon Photodiode in Planar Technology • N-Si Material Anode, Front Contact Cathode, Back Contact • High Reliability • Low Noise • Detector for Low Luminance • No Testable Degradation


    OCR Scan     		3X10-15 x1013 KOM2045 fl23t PDF

    Untitled

    Abstract: No abstract text available
    Text: KENNEDY H S M.S. KENNEDY CORP. CORP b3E D • S1343D0 D0002D2 HIGH SPEED/VOLTAGE OP AMP SS2 ■ MSK 1461 (315) 699-9201 8170 Thompson Road • Cicero, N.Y. 13039 FEATURES: • • • • • • Extremely Fast Wide Supply Range ±15V to ±45V VMOS Output, No S.O.A. Restrictions


    OCR Scan     		S1343D0 D0002D2 1461B Mil-H-38534 PDF