3VD212600YL Search Results

Contextual Info: 3VD212600YL 3VD212600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD212600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon 3 epitaxial planar technology. ¾ Advanced termination scheme to provide enhanced voltageblocking capability.

Planar gAte Power MOSFET Wafer

Abstract: 1N60A TO-251 Package
Contextual Info: 3VD212600YL 3VD212600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD212600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Advanced termination scheme to provide enhanced voltage-blocking capability.

1N60A

Abstract: 3VD212600YL
Contextual Info: 3VD212600YL 3VD212600YL 高压MOSFET芯片 描述 Ø 3VD212600YL为采用硅外延工艺制造的N沟道增 强型600V高压MOS功率场效应晶体管； Ø 先进的高压分压终止环结构； Ø 较高的雪崩能量； Ø 漏源二极管恢复时间快；