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    BR 1n70

    Abstract: 1N70 TO-251-3L
    Text: 3VD199700YL 3VD199700YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD199700YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Advanced termination scheme to provide enhanced voltage-blocking capability.


    Original     		3VD199700YL 3VD199700YL O-251-3L 2070m 1900m BR 1n70 1N70 TO-251-3L PDF

    BR 1n70

    Abstract: 0.8um 700V mos 1N70
    Text: 3VD199700YL 3VD199700YL 高压MOSFET芯片 描述 Ø 3VD199700YL为采用硅外延工艺制造的N沟道增 强型700V高压MOS功率场效应晶体管； Ø 先进的高压分压终止环结构； Ø 较高的雪崩能量； Ø 漏源二极管恢复时间快；


    Original     		3VD199700YL 3VD199700YL 3VD199700YLN 700VMOS O-251-3L 2070m 1900m 556um 440um BR 1n70 0.8um 700V mos 1N70 PDF