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Catalog Datasheet	MFG & Type	PDF	Document Tags
1N60 MOS Abstract: 1N60 1N60 mosfet to2513l TO-251-3L 2513L mosfet 1N60 Text: 3VD186600YL 3VD186600YL 高压MOSFET芯片描述 ¾ 3VD186600YL为采用硅外延工艺制造的N沟道增强型600V高压MOS功率场效应晶体管； ¾ 先进的高压分压终止环结构； ¾ 较高的雪崩能量； ¾ 漏源二极管恢复时间快；	Original	PDF	3VD186600YL 3VD186600YL 3VD186600YLN 600VMOS O-251-3L 250AVDS 30VVDS 600VVGS 1N60 MOS 1N60 1N60 mosfet to2513l TO-251-3L 2513L mosfet 1N60
3VD186600YL Abstract: 1N60 Text: 3VD186600YL 3VD186600YL 高压MOSFET芯片描述 Ø 3VD186600YL为采用硅外延工艺制造的N沟道增强型600V高压MOS功率场效应晶体管； Ø 先进的高压分压终止环结构； Ø 较高的雪崩能量； Ø 漏源二极管恢复时间快；	Original	PDF	3VD186600YL 3VD186600YL 3VD186600YLN 600VMOS O-251-3L 1N60
Diode Equivalent 1N60 Abstract: 1N60 MOS 1N60 SILAN diode 1n60 1N60 silan Text: 3VD186600YL 3VD186600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD186600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Advanced termination scheme to provide enhanced Ø Avalanche Energy Specified	Original	PDF	3VD186600YL 3VD186600YL O-251-3Ltype Diode Equivalent 1N60 1N60 MOS 1N60 SILAN diode 1n60 1N60 silan
Diode Equivalent 1N60 Abstract: No abstract text available Text: 3VD186600YL 3VD186600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD186600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. 1 3 1-Gate PAD 3-Source PAD ¾ Advanced termination scheme to provide enhanced voltageblocking capability.	Original	PDF	3VD186600YL 3VD186600YL O-251-3Ltype 250uA Diode Equivalent 1N60