3Q30B Search Results

Contextual Info: E G & 6/ CANADA/O PTOE LEK n n lOE D • 3Q30bl0 D0DQQ31 R ■ CANA i l Solid state 7"" V/"i>7 Solid State Emitters Elec,ro ° P “CS Developmental Type C86046E 820 nm CW-Operated GaAIAs Injection Laser With Integral Optical Feedback Photodiode ■ Typical Threshold Current - 100 mA

diode.18

Abstract: VTE-C18AL Vactec
Contextual Info: ShE D • 3Q30bQ^ D0Ü1E15 3 bS GaAIAs Infrared Emitting Diodes VTE-C18AL 18 mil Chip — 880 nm r E G 8« G HVCT -m -iS VACTEC DESCRIPTION PAC K AG E DIMENSIONS inch mm EG&G Vactec fabricates its LED chips using a state-of-the-art liquid phase epitaxial process which produces high

HFD-1100

Abstract: HFD PIN photodiode 850 nm HFD-1060 fast photodiode amplifier low noise ir photodiode amplifier ultrafast photodiode HFD1100
Contextual Info: E G & G/CANADA/OPTOELEK 47E D • 3Q30bl0 □□□033b T ■ C ANA HFD Series 1060; 1100 _ t -^-¿7 Features • • . 600 V/10"6 S Slew Rate Amplifier Groundable Case • • Temperature and Voltage Stable Low Voltage Operation • Shielded Amplifier

tic 1060

Contextual Info: E G & G/C ANADA/OPTOELEK ID 303Qb]>a DOOGIGI 7^3 « C A N A Photodiode i t e i C30807, C30808, C30809 Optics E ,e c t n o l C30810, C30822, C30831 DATA SHEET V l ’ S " 3 N-Type Silicon p-i-n Photodetectors L-571 C30810 1-568 C30807 C30831 C30808 C30809,

FFD-100

Abstract: FFD-040B FFD-040A FFD-040 FFD-200 photo-diode bias ultrafast photodiode FFD040A
Contextual Info: E G & G/ CANADA/ OPTOELEK i*7E ]> I 3D3DblD 000033M 5 ICANA F Series FFD-040;FFD-100;FFD-200 T -m -53 Features • • • • Large Active Area W ide Spectral Range Low NEP Low Operating Voltage High Responsivity Ultra-Fast Rise and Fall Tim e Isolated Photodiode Chip

Contextual Info: E G 8t G / C A N A D A / O P T O E L E K It C il 1ÜE D • 3G3GblO □□□□□S3 T *CANA Infrared Emitters Electro Optics Eiectrooptics and Devices S86017E, S86018E S86020E, S86021E S86017E S86018E o High-Speed Gallium Aluminum Arsenide IR-Emitters for Continuous

Contextual Info: E G & G/CANADA/ OP TOELEK 3G 3G blO IO RC/IB ectro Optics OOOOO'ì? 4 3 2 HCANA Planar InGaAs ÁPD C30644, C30645 DATA SHEET • Spectral response range 1100 to 1700 nm ■ High responsivity ■ Low capacitance ■ Fast response time ■ Low dark current and noise

SIECOR Fiber Optic cable

Contextual Info: E G & G/CANADA/OPTOELEK ^ M7E D • 3ü3DblG OGDOE^ EGzG OPTOELECTRONICS h ■ CANA C86075E& C86082E Series - n v / ' O i C86082E Series C86075E Series The EG&G series of 1300 nm LEDs are edge emitting InGaAsP

Contextual Info: G & G/CANADA/OPTOELEK itesi ID D BDBGblD ODGGOMb Electro Optics and Devices T70 « C A N A /-Y/’b Solid State Detectors Developmental Types C30952 Series Photodiodes Very Wide Bandpass Silicon Photodiode - Preamplifier Modules Available With Integral Light Pipes For Fiber Optic Applications

VT30N1

Abstract: VT33N2 VT30N2 VT30N3 VT300 VT30N4 VT33N1 VT33N3
Contextual Info: VT300 Se rie s PHOTOCONDUCTIVE CELL PA CK A G E DIM ENSIONS inch mm A B SO LU TE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNITS CONTINUOUS POWER DISSIPATION DERATE ABOVE 25° C Pd A P d /A T 125 2.5 mW mW/°C Ta - 40 to +75 °C TEMPERATURE RANGE OPERATING AND STORAGE

Contextual Info: E G & G/CANADA/OPTOELÊK BOBOblD ODDOESb Q • CANA 850 nm Quantum Well 7^ : Pulsed Laser Series DATA SHEET C86083E - High power pulsed laser in a coaxial package T O peration at 50ns pulse duration and 3 kH z repetition rate H igh P eak O utput Pow er: 10W @ 17 A

Contextual Info: E G & G/CANADA/OPTOELEK ID î • 3ü30blü G O O O i n ItC ilElectro 123 M C A N A T-W S i Photodiode C30895 DATA SHEET Optics Silicon Avalanche Photodiode Optimized for High Responsivity and Very Low Noise at 1060 Nanometers ■ Noise Equivalent Power NEP at 1060 nm — 7.5 x 1 0 14 W/Hz1/2 max.

45016m

Abstract: J12-18C-R250U J12D-M204-R01M J12-18C-R01M J12D-M204-R02M metal detectors circuit HgCdTe PbSe Judson judson PA-100 J12-18C
Contextual Info: E G S G JUI1S0N 31E D m 3030b05 D0D0225 □ • JlID T -V /-V / Indium Arsenide Detector Operating Notes General Responsivity Temperature Effects J12 Series detectors are high-quality Indium Arsenide photodiodes for use in the 1 to 3.6 urn wavelength range.

Vactec

Abstract: Photodiode-Array VTB9610
Contextual Info: SbE n 3 0 3 0 L i Q c3 0 0 D 1 1 1 3 D bOl ' <4 I ' O O _VTB9610DS Rev. B PHOTODIODE ARRAY 24 ELEMENT E G zG v a c t e c VTB9610 OPTOELECTRONICS E G & G VCT VACTEC PRODUCT DESCRIPTION FEATURES This is a 24 element photodiode array specifically designed for use in the

Contextual Info: E G & G/CANADA/OPTOELEK I t C i l • IO Optics 303DtilD DDOOlQ'ì TÔH « C A N A “p - Y / - * ' 3 Photodiode C30843 C30844, C30845, C30846 DATA S H EET Quadrant N-Type Silicon p-i-n Photodetectors ■ Broad Range of Photosensitive Suface Areas — 5 mm2 to 100 mm2

Corning 7052

Abstract: DT-110
Contextual Info: E G & G JUDSON 27E D • 3D30b0S GQQOns b ■ DT Series Features • • • • Planar Diffused Oxide Passivated Guard Ring Construction Wide Spectral Range • • • • Low Noise Large Area Fast Rise Time Wide Dynamic Range Operating Data and Specifications at 23°C: Typical Performance at 100 V Bias