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    IPG20N06S3L-35

    Abstract: 3N06L35
    Text: Preliminary Data Sheet OptiMOS -T Power-Transistor IPG20N06S3L-35 Product Summary V DS 55 V R DS on ,max5) 35 mΩ ID 20 A Features • Dual N-channel Logic Level - Enhancement mode P-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPG20N06S3L-35 3N06L35 IPG20N06S3L-35 3N06L35

    3N06L35

    Abstract: PG-TDSON-8-4 IPG20N06S3L-35 3N06L
    Text: IPG20N06S3L-35 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max5) 35 mΩ ID 20 A Features • Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPG20N06S3L-35 3N06L35 3N06L35 PG-TDSON-8-4 IPG20N06S3L-35 3N06L