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    3n06l

    Abstract: v5856
    Text: IPD30N06S3L-20 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 20 mΩ ID 30 A Features • N-channel - Logic Level - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPD30N06S3L-20 PG-TO252-3-11 3N06L20 3n06l v5856

    3n06l20

    Abstract: ANPS071E IPD30N06S3L-20 PG-TO252-3-11
    Text: IPD30N06S3L-20 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 20 mΩ ID 30 A Features • N-channel - Logic Level - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPD30N06S3L-20 PG-TO252-3-11 3N06L20 3n06l20 ANPS071E IPD30N06S3L-20 PG-TO252-3-11