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    3N06L Price and Stock

    onsemi FQU13N06LTU-WS

    MOSFET N-CH 60V 11A IPAK
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    Goford Semiconductor 03N06L

    N60V,RD(MAX)<100M@10V,RD(MAX)<12
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    DigiKey 03N06L Cut Tape 6,340 1
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    onsemi FQD13N06LTM

    MOSFET N-CH 60V 11A DPAK
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    TME FQD13N06LTM 2,327 1
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    onsemi FQP13N06L

    MOSFET N-CH 60V 13.6A TO220-3
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    Rochester Electronics LLC FQP13N06L

    POWER FIELD-EFFECT TRANSISTOR, 1
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    DigiKey FQP13N06L Bulk 650
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    Find more 3N06L price and stock on Findchips.com

    3N06L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3N06L06

    Abstract: marking CODE R SMD DIODE SMD MARKING CODE transistor TRANSISTOR SMD MARKING CODE ag IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 PG-TO263-3-2 SP0000-88004 IPI80N06S3L06
    Text: IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 5.6 mΩ ID 80 A • MSL1 up to 260°C peak reflow


    Original     		PDF IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 EIA/JESD22-A114-B SP0000-88004 3N06L06 marking CODE R SMD DIODE SMD MARKING CODE transistor TRANSISTOR SMD MARKING CODE ag IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 PG-TO263-3-2 SP0000-88004 IPI80N06S3L06

    g51 smd

    Abstract: 3N06L08 PG-TO252-3-11 ANPS071E IPD50N06S3L-08 GD15-0 3N06L
    Text: IPD50N06S3L-08 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 7.8 mΩ ID 50 A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPD50N06S3L-08 PG-TO252-3-11 3N06L08 g51 smd 3N06L08 PG-TO252-3-11 ANPS071E IPD50N06S3L-08 GD15-0 3N06L

    3N06L05

    Abstract: smd marking g23 ANPS071E IPB80N06S3L-05 IPI80N06S3L-05 IPP80N06S3L-05 PG-TO263-3-2 D1053 SMD MARKING CODE g23
    Text: IPB80N06S3L-05 IPI80N06S3L-05, IPP80N06S3L-05 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 4.5 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB80N06S3L-05 IPI80N06S3L-05, IPP80N06S3L-05 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N06L05 IPI80N06S3L-05 3N06L05 smd marking g23 ANPS071E IPB80N06S3L-05 IPI80N06S3L-05 IPP80N06S3L-05 PG-TO263-3-2 D1053 SMD MARKING CODE g23

    PG-TDSON-8-4

    Abstract: 3N06L23 3n06l IPG20N06S3L-23
    Text: IPG20N06S3L-23 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max5) 23 mΩ ID 20 A Features • Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPG20N06S3L-23 3N06L23 PG-TDSON-8-4 3N06L23 3n06l IPG20N06S3L-23

    3N06L06

    Abstract: ANPS071E IPD50N06S3L-06 PG-TO252-3-11
    Text: IPD50N06S3L-06 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 6.0 mΩ ID 50 A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPD50N06S3L-06 PG-TO252-3-11 3N06L06 3N06L06 ANPS071E IPD50N06S3L-06 PG-TO252-3-11

    3N06L06

    Abstract: IPI80N06S3L06 ANPS071E IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 PG-TO263-3-2
    Text: IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 5.6 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N06L06 IPI80N06S3L-06 3N06L06 IPI80N06S3L06 ANPS071E IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 PG-TO263-3-2

    DIODE D29 -08

    Abstract: 3N06L08 D29 -08 d29 08 marking CODE R SMD DIODE TRANSISTOR SMD MARKING CODE ag IPB80N06S3L-08 IPI80N06S3L-08 IPP80N06S3L-08 PG-TO263-3-2
    Text: IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 7.6 mΩ ID 80 A • MSL1 up to 260°C peak reflow


    Original     		PDF IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 EIA/JESD22-A114-B SP0000-88128 DIODE D29 -08 3N06L08 D29 -08 d29 08 marking CODE R SMD DIODE TRANSISTOR SMD MARKING CODE ag IPB80N06S3L-08 IPI80N06S3L-08 IPP80N06S3L-08 PG-TO263-3-2

    PG-TDSON-8-4

    Abstract: No abstract text available
    Text: Preliminary Data Sheet OptiMOS -T Power-Transistor IPG20N06S3L-23 Product Summary V DS 55 V R DS on ,max5) 23 mΩ ID 20 A Features • Dual N-channel Logic Level - Enhancement mode P-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPG20N06S3L-23 3N06L23 PG-TDSON-8-4

    3N06L05

    Abstract: SMD MARKING CODE g23
    Text: IPB80N06S3L-05 IPI80N06S3L-05, IPP80N06S3L-05 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 4.5 mΩ ID 80 A • MSL1 up to 260°C peak reflow


    Original     		PDF IPB80N06S3L-05 IPI80N06S3L-05, IPP80N06S3L-05 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI80N06S3L-05 PG-TO263-3-2 3N06L05 SMD MARKING CODE g23

    3N06L06

    Abstract: C4 diode ANPS071E IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 INFINEON smd PART MARKING IPI80N06S3L06
    Text: Target data sheet IPI80N06S3L-06 IPP80N06S3L-06,IPB80N06S3L-06 OptiMOS -T Power-Transistor Feature • n-Channel • Enhancement mode • Logic Level • AEC Q101 qualified Product Summary VDS 55 V RDS on max. SMD version 5.6 mΩ ID 80 A P- TO262 -3-1


    Original     		PDF IPI80N06S3L-06 IPP80N06S3L-06 IPB80N06S3L-06 IPP80N06S3L-06 3N06L06 BIPP80N06S3L-06, 3N06L06 C4 diode ANPS071E IPB80N06S3L-06 IPI80N06S3L-06 INFINEON smd PART MARKING IPI80N06S3L06

    3N06L13

    Abstract: ANPS071E IPB45N06S3L-13 IPI45N06S3L-13 IPP45N06S3L-13 PG-TO263-3-2
    Text: IPB45N06S3L-13 IPI45N06S3L-13, IPP45N06S3L-13 OptiMOS -T2 Power-Transistor Product Summary V DS 55 R DS on ,max (SMD version) 13.1 ID 45 V mΩ A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB45N06S3L-13 IPI45N06S3L-13, IPP45N06S3L-13 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N06L13 IPI45N06S3L-13 3N06L13 ANPS071E IPB45N06S3L-13 IPI45N06S3L-13 IPP45N06S3L-13 PG-TO263-3-2

    IPG20N06S3L-35

    Abstract: 3N06L35
    Text: Preliminary Data Sheet OptiMOS -T Power-Transistor IPG20N06S3L-35 Product Summary V DS 55 V R DS on ,max5) 35 mΩ ID 20 A Features • Dual N-channel Logic Level - Enhancement mode P-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPG20N06S3L-35 3N06L35 IPG20N06S3L-35 3N06L35

    SMD BR 17

    Abstract: No abstract text available
    Text: IPB45N06S3L-13 IPI45N06S3L-13, IPP45N06S3L-13 OptiMOS -T Power-Transistor Product Summary Features V DS • N-channel - Logic Level - Enhancement mode 55 R DS on ,max (SMD version) • Automotive AEC Q101 qualified 13.1 ID 45 V mΩ A • MSL1 up to 260°C peak reflow


    Original     		PDF IPB45N06S3L-13 IPI45N06S3L-13, IPP45N06S3L-13 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI45N06S3L-13 SMD BR 17

    3N06L13

    Abstract: No abstract text available
    Text: IPB45N06S3L-13 IPI45N06S3L-13, IPP45N06S3L-13 OptiMOS -T Power-Transistor Product Summary Features V DS • N-channel - Logic Level - Enhancement mode 55 R DS on ,max (SMD version) • Automotive AEC Q101 qualified ID 13.1 45 V mΩ A • MSL1 up to 260°C peak reflow


    Original     		PDF IPB45N06S3L-13 IPI45N06S3L-13, IPP45N06S3L-13 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI45N06S3L-13 PG-TO263-3-2 3N06L13

    Untitled

    Abstract: No abstract text available
    Text: IPD50N06S3L-06 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 6.0 mΩ ID 50 A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPD50N06S3L-06 PG-TO252-3-11 PG-TO252-3-2 3N06L06

    ANPS071E

    Abstract: IPB25N06S3L-22 IPI25N06S3L-22 IPP25N06S3L-22 PG-TO263-3-2 3N06L22 3n06l
    Text: IPB25N06S3L-22 IPI25N06S3L-22, IPP25N06S3L-22 OptiMOS -T2 Power-Transistor Product Summary V DS 55 R DS on ,max (SMD version) 21.3 ID 25 V mΩ A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB25N06S3L-22 IPI25N06S3L-22, IPP25N06S3L-22 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N06L22 IPI25N06S3L-22 ANPS071E IPB25N06S3L-22 IPI25N06S3L-22 IPP25N06S3L-22 PG-TO263-3-2 3N06L22 3n06l

    3N06L35

    Abstract: PG-TDSON-8-4 IPG20N06S3L-35 3N06L
    Text: IPG20N06S3L-35 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max5) 35 mΩ ID 20 A Features • Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPG20N06S3L-35 3N06L35 3N06L35 PG-TDSON-8-4 IPG20N06S3L-35 3N06L

    3N06L13

    Abstract: ANPS071E IPD50N06S3L-13 PG-TO252-3-11
    Text: IPD50N06S3L-13 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 13 mΩ ID 50 A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPD50N06S3L-13 PG-TO252-3-11 3N06L13 3N06L13 ANPS071E IPD50N06S3L-13 PG-TO252-3-11

    IPP25N06S3L-21

    Abstract: Diode smd marking 44 ANPS071E IPB25N06S3L-21 INFINEON smd PART MARKING
    Text: Target data sheet IPI25N06S3L-21 IPP25N06S3L-21,IPB25N06S3L-21 OptiMOS -T Power-Transistor Product Summary Feature VDS • n-Channel RDS on • Enhancement mode ID • Logic Level • AEC Q101 qualified max. SMD version P- TO262 -3-1 P- TO263 -3-2 55 V


    Original     		PDF IPI25N06S3L-21 IPP25N06S3L-21 IPB25N06S3L-21 IPP25N06S3L-21 3N06L21 BIPP25N06S3L-21, Diode smd marking 44 ANPS071E IPB25N06S3L-21 INFINEON smd PART MARKING

    marking CODE R SMD DIODE

    Abstract: SP0000-87994 IPB25N06S3L-22 IPI25N06S3L-22 IPP25N06S3L-22 PG-TO263-3-2 3N06L22
    Text: IPB25N06S3L-22 IPI25N06S3L-22, IPP25N06S3L-22 OptiMOS -T Power-Transistor Product Summary Features V DS • N-channel - Logic Level - Enhancement mode 55 R DS on ,max (SMD version) • Automotive AEC Q101 qualified ID 21.3 25 V mΩ A • MSL1 up to 260°C peak reflow


    Original     		PDF IPB25N06S3L-22 IPI25N06S3L-22, IPP25N06S3L-22 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 EIA/JESD22-A114-B SP0000-87994 marking CODE R SMD DIODE SP0000-87994 IPB25N06S3L-22 IPI25N06S3L-22 IPP25N06S3L-22 PG-TO263-3-2 3N06L22

    DIODE D29 -08

    Abstract: 3N06L08 Diode d29 08 ANPS071E IPB80N06S3L-08 IPI80N06S3L-08 IPP80N06S3L-08 PG-TO263-3-2 GD15-0
    Text: IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 7.6 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N06L08 IPI80N06S3L-08 DIODE D29 -08 3N06L08 Diode d29 08 ANPS071E IPB80N06S3L-08 IPI80N06S3L-08 IPP80N06S3L-08 PG-TO263-3-2 GD15-0

    3N06L13

    Abstract: Application Note ANPS071E ANPS071E IPB45N06S3L-13 IPI45N06S3L-13 IPP45N06S3L-13 PG-TO263-3-2
    Text: IPB45N06S3L-13 IPI45N06S3L-13, IPP45N06S3L-13 OptiMOS -T Power-Transistor Product Summary Features V DS • N-channel - Logic Level - Enhancement mode 55 R DS on ,max (SMD version) • Automotive AEC Q101 qualified 13.1 ID 45 V mΩ A • MSL1 up to 260°C peak reflow


    Original     		PDF IPB45N06S3L-13 IPI45N06S3L-13, IPP45N06S3L-13 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N06L13 IPI45N06S3L-13 3N06L13 Application Note ANPS071E ANPS071E IPB45N06S3L-13 IPI45N06S3L-13 IPP45N06S3L-13 PG-TO263-3-2

    3n06l20

    Abstract: ANPS071E IPD30N06S3L-20 PG-TO252-3-11
    Text: IPD30N06S3L-20 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 20 mΩ ID 30 A Features • N-channel - Logic Level - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPD30N06S3L-20 PG-TO252-3-11 3N06L20 3n06l20 ANPS071E IPD30N06S3L-20 PG-TO252-3-11

    3N06L08

    Abstract: No abstract text available
    Text: IPD50N06S3L-08 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 7.8 mΩ ID 50 A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPD50N06S3L-08 PG-TO252-3-11 PG-TO252-3-2 3N06L08 3N06L08