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    3LP TRANSISTOR Search Results

    3LP TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    3LP TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    t06 marking sot23

    Abstract: BC857 3ft marking 6Ct SOT23 SOT89 marking cec marking da sot89 MARKING BL SOT89 SOT23 "Marking Code" t04 SOT89 MARKING CODE marking t04 sot23 marking 1G SOT23
    Text: Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER PACKAGE MARKING CODE PACKAGE 2PA1576Q FtQ SC-70 BC808W 5Ht SOT323 2PA1576R FtR SC-70 BC808-16 5Ep SOT23 2PA1576S FtS SC-70 BC808-16W


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    PDF 2PA1576Q SC-70 BC808W OT323 2PA1576R BC808-16 2PA1576S BC808-16W t06 marking sot23 BC857 3ft marking 6Ct SOT23 SOT89 marking cec marking da sot89 MARKING BL SOT89 SOT23 "Marking Code" t04 SOT89 MARKING CODE marking t04 sot23 marking 1G SOT23

    Untitled

    Abstract: No abstract text available
    Text: Transistors Diodes SMD Type Product specification BCV62 • Features Unit: mm ● High current gain ● Low collector-emitter saturation voltage 1 2 1 TR2 TR1 3 4 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage VCBO


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    PDF BCV62 BCV62B BCV61 BCV61A BCV61B BCV61C

    Untitled

    Abstract: No abstract text available
    Text: MOSFET SMD Type PNP general purpose double transistor BCV62 • Features Unit: mm ● High current gain ● Low collector-emitter saturation voltage 1 2 1 TR2 TR1 3 4 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage


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    PDF BCV62 BCV62A BCV62C BCV62B BCV61 BCV61A BCV61B BCV61C

    3Kp Transistor

    Abstract: BCV61 BCV62 BCV62A BCV62B BCV62C 3LP Transistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D071 BCV62 PNP general purpose double transistor Product data sheet Supersedes data of 1997 Jun 18 1999 Apr 08 NXP Semiconductors Product data sheet PNP general purpose double transistor FEATURES BCV62 PINNING • Low current max. 100 mA


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    PDF M3D071 BCV62 OT143B BCV61. 115002/00/03/pp8 3Kp Transistor BCV61 BCV62 BCV62A BCV62B BCV62C 3LP Transistor

    BCV61

    Abstract: BCV62 BCV62A BCV62B BCV62C
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D071 BCV62 PNP general purpose double transistor Product specification Supersedes data of 1997 Jun 18 1999 Apr 08 Philips Semiconductors Product specification PNP general purpose double transistor FEATURES BCV62 PINNING


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    PDF M3D071 BCV62 OT143B BCV61. SCA63 115002/00/03/pp8 BCV61 BCV62 BCV62A BCV62B BCV62C

    3Kp Transistor

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D071 BCV62 PNP general purpose double transistor Product specification File under Discrete Semiconductors, SC04 1997 Jun 18 Philips Semiconductors Product specification PNP general purpose double transistor


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    PDF M3D071 BCV62 BCV62 OT143B BCV61. BCV62As, SCA54 117047/00/02/pp8 3Kp Transistor

    BC856B 3BP

    Abstract: pnp 3Fp 3Fp transistor 3Bp transistor transistor 3fp BC857 st marking 3gp 3Fp 39 transistor BC858C BC857
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC856; BC857; BC858 PNP general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 17 Philips Semiconductors Product specification


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    PDF M3D088 BC856; BC857; BC858 BC846, BC847 BC848. BC856B 3BP pnp 3Fp 3Fp transistor 3Bp transistor transistor 3fp BC857 st marking 3gp 3Fp 39 transistor BC858C BC857

    philips diode PH 33D

    Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817


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    PDF 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A philips diode PH 33D PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m

    philips diode PH 33D

    Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


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    PDF 1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE

    SOT89 MARKING CODE 3D

    Abstract: sot89 mark code AE sot23 mark code AE 3D sot23 SOT89 marking cec SOT89 MARKING CODE 43 marking 1p sot23 sot23 p04 marking marking P1R SOT89 MARKING 5G
    Text: Philips Sem iconductors Small-signal Transistors Marking MARKING LIST Types in SC59, SC70, SOT23, SOT89, SOT143, SOT223 and SOT323 packages are marked with a code as listed in the following tables. The actual type number and data code are on the packing. MARK


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    PDF OT143, OT223 OT323 PXTA27 BCX51 BCW60A BCW60B BCX51-10 BCW60C BCX51-16 SOT89 MARKING CODE 3D sot89 mark code AE sot23 mark code AE 3D sot23 SOT89 marking cec SOT89 MARKING CODE 43 marking 1p sot23 sot23 p04 marking marking P1R SOT89 MARKING 5G

    marking code p07 sot89

    Abstract: marking code 3Fp P1M marking code sot 223 PDTC* MARKING CODE p04 sot223 FtZ MARKING CODE T07 marking P2F SOT23 marking t04 sot23 marking code P1F
    Text: MARKING CODES Page T y p e n u m b e r to m arking c o d e c ro s s re fe re n ce 68 M ark in g co d e to type n u m b er c ro s s re fe re n ce 74 Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER I MARKING


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    PDF 2PA1576Q 2PA1576R 2PA1576S 2PA17 2PA1774R 2PA1774S 2PB709AQ 2PB709AR 2PB709AS 2PB710AQ marking code p07 sot89 marking code 3Fp P1M marking code sot 223 PDTC* MARKING CODE p04 sot223 FtZ MARKING CODE T07 marking P2F SOT23 marking t04 sot23 marking code P1F

    pnp 3Fp

    Abstract: marking 3gp marking code 3Fp 3bp sot 23 marking sot23 marking u8 marking 3Bp BC856B 3BP marking code u8 marking 3fp SOT23 SOT MARKING 3lp
    Text: SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a SOT-23 plastic package. QUICK REFERENCE DATA BC856 BC857 BC858 ~ V CEX max. 80 50 30 V Collector-emitter voltage open base - v CEO max. 65 45 30 V Collector current (peak value) - ' cm max. 200


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    PDF OT-23 BC856 OT-23. BC857 BC858 BC856A BC856B BC857A pnp 3Fp marking 3gp marking code 3Fp 3bp sot 23 marking sot23 marking u8 marking 3Bp BC856B 3BP marking code u8 marking 3fp SOT23 SOT MARKING 3lp

    3Kp Transistor

    Abstract: 3lp Transistor marking 3KP 3KP MARKING MARKING code 3lp
    Text: Philips Semiconductors Product specification PNP general purpose double transistor FEATURES BCV62 PINNING • Low current max 100 mA PIN DESCRIPTION • Low voltage (max. 30 V) 1 collector TR2; base TR1 and TR2 • Matched pair. 2 collector TR1 3 emitter TR1


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    PDF BCV62 OT143B BCV61. BCV62B BCV62C BCV62 BCV62A OT143B) 3Kp Transistor 3lp Transistor marking 3KP 3KP MARKING MARKING code 3lp

    3Fp transistor

    Abstract: BC857 3Bp transistor bc858 bc856b 3lp Transistor General Purpose Transistors BC856 pnp 3Fp transistor 3Hp
    Text: Philips Semiconductors Product specification PNP general purpose transistors BC856; BC857; BC858 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 65 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector General purpose switching and amplification.


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    PDF BC846, BC847 BC848. BC856 BC856A BC856B BC857 BC857A BC857B BC857C 3Fp transistor 3Bp transistor bc858 3lp Transistor General Purpose Transistors pnp 3Fp transistor 3Hp

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PNP general purpose double transistor FEATURES BCV62 PINNING • Low current max. 100 mA PIN DESCRIPTION • Low voltage (max. 30 V) 1 collector TR2; base TR1 and TR2 • Matched pair. 2 collector TR1 3 emitter TR1


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    PDF BCV62 OT143B BCV61. BCV62B BCV62A BCV62C OT143B

    BC856B 3BP

    Abstract: BC856B pnp 3Fp 3FP transistor marking code 3Fp transistor 3fp 3Kp Transistor marking 3gp BC857 BC847
    Text: Philips Semiconductors Product specification PNP general purpose transistors BC856; BC857; BC858 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 65 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and amplification.


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    PDF BC846, BC847 BC848. BC856 BC857C BC856A BC858 BC856B BC858A BC857 BC856B 3BP pnp 3Fp 3FP transistor marking code 3Fp transistor 3fp 3Kp Transistor marking 3gp

    q 143 transistor

    Abstract: BCV62B M.H. Transistor 3LP Transistor
    Text: BCV62; 62A BCV62B; 62C SILICON PLANAR EPITAXIAL TRANSISTOR Double p-n-p transistor, in SO T-143 plastic package, designed for use in applications where the working point must be independent of temperature. Owing to application of two similar crystals of one slice this device has a good thermal coupling and


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    PDF BCV62; BCV62B; T-143 BCV62B BCV62C BCV62 q 143 transistor BCV62B M.H. Transistor 3LP Transistor

    bcb57b

    Abstract: BCB57 BC856B 3BP BC858 BC856 BC856A BC856B silicon planar epitaxial transistors BC857A BC857B
    Text: 7 1 1 G Ô E b Q O b ö H B ? 2b2 BC856 BC857 BC858 IPHIN SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistros, in a S O T-23 plastic package. Q U IC K R E F E R E N C E D A T A BC856 BC857 BC858 Col lector-emitter voltage + V g E = 1 V “ V C EX max. 80


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    PDF 0DbflH37 BC856 BC857 BC858 OT-23 BC856 200/xA OT-23. bcb57b BCB57 BC856B 3BP BC856A BC856B silicon planar epitaxial transistors BC857A BC857B

    BC856B 3BP

    Abstract: 3Fp transistor 3Bp transistor transistor 3Hp pnp 3Fp transistor 3fp BC857 3Kp Transistor BC858 BC847
    Text: Philips Semiconductors Product specification PNP general purpose transistors BC856; BC857; BC858 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 65 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and amplification.


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    PDF BC846, BC847 BC848. BC856 BC857C BC856A BC858 BC856B BC858A BC857 BC856B 3BP 3Fp transistor 3Bp transistor transistor 3Hp pnp 3Fp transistor 3fp 3Kp Transistor

    3Kp Transistor

    Abstract: BCV62A two transistor forward BCV61 BCV62 BCV62B BCV62C 3LP Transistor
    Text: fc.bS3T31 002M547 GEb H A P X N AUER PHILIPS/DISCRETE BCV62; 62A BCV62B; 62C b7E D SILICON PLANAR EPITAXIAL TRANSISTOR Double p-n-p transistor, in SO T-143 plastic envelope, designed for use in applications where the working point must be independent o f temperature.


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    PDF bb53T31 002M547 BCV62; BCV62B; OT-143 BCV61. bb53R31 Q024550 3Kp Transistor BCV62A two transistor forward BCV61 BCV62 BCV62B BCV62C 3LP Transistor

    BC858R

    Abstract: No abstract text available
    Text: BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P tra n s is to rs , in a S O T -2 3 p la s tic package. Q U IC K R E F E R E N C E D A T A C o lle c to r-e m itte r vo lta g e + V g g = 1 V ~ V CEX C o lle c to r-e m itte r vo lta g e (o pen base)


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    PDF BC856 BC857 BC858 BC858R

    BC856B

    Abstract: BC666 BC856 BC856A BC857 BC857A BC857B BC857C BC858 BC858A
    Text: • bbS3^31 0024471 4b4 BIAPX N AMER PHILIPS/DISCRETE BC856 BC857 BC858 b?E D J V . SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistros, in a SOT-23 plastic package. Q U IC K R E F E R E N C E D A T A BC856 C o lle c to r-e m itte r voltage + V g g = 1 V


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    PDF BC856 BC857 BC858 OT-23 BC857 BC856B BC666 BC856 BC856A BC857A BC857B BC857C BC858 BC858A

    5cp smd

    Abstract: smd 3fp 5Bp smd smd code marking 2A sot23 p2g SMD SMD Code BJP 60 BC857B sot23 3Bp smd marking codes transistors sot-23 26 JB MARKING SOT-23
    Text: General Purpose SMD PNP Transistors 11 General Purpose SMD® PNP Transistors Description Mechanical Data Philips Components general purpose transistors combine the highest quality standards with state-of-the-art pro­ duction equipment to fulfill the need for generic, low-cost


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    PDF OT-23 OT-89 OT-143 OT-223 OT-223 5cp smd smd 3fp 5Bp smd smd code marking 2A sot23 p2g SMD SMD Code BJP 60 BC857B sot23 3Bp smd marking codes transistors sot-23 26 JB MARKING SOT-23

    3Kp Transistor

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET BCV62 PNP general purpose double transistor Product specification Supersedes data of 1997 Jun 18 Philips Sem iconductors 1999 Apr 08 PHILIPS Philips Semiconductors Product specification PNP general purpose double transistor


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    PDF BCV62 T143B BCV61. 115002/00/03/pp8 3Kp Transistor