3FC TRANSISTOR Search Results

MRF221

Abstract: mrf433 2N6081 2C6081
Contextual Info: M O T O R O L A SC -CDIODES/OPTO} i 6367255 MOTOROLA SC 34 DE~|fc.3fc.7a5S 34c DIO DES/OPTO 003Ö071 38071 SILICON RF TRANSISTOR DICE (continued) 2C6081 DIE NO. — NPN LINE SOURCE — RF605.419 This die provides performance equal to or better than that of

2N6429

Abstract: J 2N2484 mpsa18 2N642B MPS-A09 2N2484 motorola 2N2483 SILICON SMALL-SIGNAL DICE MPS-6571 MPSA09
Contextual Info: MOTOROLA SC -CDIODES/OPTOJ 6367255 MOTOROLA SC ^ * . * 3' . 34 DE J t>3fc.725S 0037T7t. □ 34C DIODES/OPTO 37976 1 SILICON SMALL-SIGNAL TRANSISTOR DICE (continued) 2C2484 DIE NO. — NPN LINE SOURCE — DMB102 This die provides performance similar to that of the following device types:

BFR99

Abstract: 2C4957 2n4957 die SILICON DICE motorola transistor dice
Contextual Info: MOTORO LA SC -CDIODES/OPTOJ 6367255 MOTOROLA SC 34 DlTJfc.3fc.72S5 003Ô0S4 CD I O D E S / O P T O 34C 38054 D T -3 Ì-J3 SILICON RF TRANSISTOR DICE continued) 2C4957 DIE NO. — PNP LINE SOURCE — RF502.57 c« This die provides performance equal to or better than that of

2N3797

Abstract: 2N3797 MOTOROLA 2N3796 2N3796 MOTOROLA 2N3798
Contextual Info: MOTOROLA SC XSTRS/R F 12E D | b 3fc,7a5M ODfibtilO 5 | f 2N3796 2N3797 CASE 22-03, STYLE 2 TO-18 TO-206AA MAXIMUM RATINGS Value Symbol Rating Drain-Source Voltage 2N3796 2N3797 Gate-Source Voltage Unit Vdc V os 25 20 VGS ±10 Vdc 1 Source Drain Current >D

2n2846

Abstract: 2N3015 2n2224 MOTOROLA 2n2218 TRANSISTOR 2n2848 2N2222A motorola 2C2222A MPS8092 2N4401 die 2n3116
Contextual Info: 34 M O T O R O L A SC -CDIODES/OPTO} 1 D • t,3fc,7S55 0 0 3 7 ^ 7 4 34C 37974 7"-3r- /S SILICON SMALL-SIGNAL TRANSISTOR DICE continued 2C2222A — DIE NO. NPN LINE SOURCE — DMB101 This die provides performance similar to that of the following device types:

Contextual Info: 12E I fc,3fc.7BS4 M OTOROL A MOTOROLA 0007307 SC b | XSTRS/R F SEM IC O N D U C T O R TECHNICAL DATA MRA0204-60 The RF Line U H F P o w e r T ra n sisto r 8 dB 225-400 MHz 60 WATTS BROADBAND UHF POWER TRANSISTOR . designed primarily for wideband, large-signal output and driver amplifier stages in

3fc relay

Abstract: diode 1.5 ke 36 ca
Contextual Info: MOTOROLA SC XSTRS/R I F 1 4 E D H fc,3fc,72S4 0 0 0 ^ = 1 7 MOTOROLA □ I •l SEMICONDUCTOR TECHNICAL DATA IRF710 N-CHANNEL ENHANCEM ENT-M O DE SILICON GATE T M O S POWER FIELD EFFECT TRANSISTOR Part Number Vd s s IRF71Q 400 V rosion 3.6 n Th is T M O S Power F E T is designed for high voltage, high speed

MMBT3904

Abstract: 2N3903 MOTOROLA SOT-23 MMBT3903 MMBT-3904
Contextual Info: MOTOROLA 6367254 SC -CXSTRS/R MOTOROLA SC Tb F> CXSTRS/R Dlf|t.3fc.72Si4 0 0 0 2 0 3 ^ 4 96D 8 2 0 3 9 F D -/S ' M AXIM UM RATINGS Symbol Value Unit Collector-Emitter Voltage Rating VCEO 40 Vdc Collector*Base Voltage VCBO 60 Vdc Emitter-Base Voltage Vebo

2H SOT23

Contextual Info: MO TORO LA SC 1EË D | L>3fc.?ES4 QGßS^Tö S | X S TR S/ R F M A X IM U M RATINGS - f p - t f ' •' MMBTA55L Symbol Rating MMBTA56L U nit Collector-Emitter Voltage VCEO 60 80 Vdc Collector-Base Voltage VCBO 60 80 Vdc Emitter-Base Voltage

2N3425 MOTOROLA

Abstract: 2N3425 MD2369
Contextual Info: MOTOROLA SC XSTRS/R F R ating E D | fe,3fc,7aSM 0Qflt,3B3 T | 1 2 Sym bol V a lu e Collector-Em itter Volta g e VcE O 15 Vdc Collector-Em itter Volta g e V C ER 20 Vdc Collector-B ase Volta g e VCBO 40 Vdc Em itter-Base V olta g e VEBO 5.0 Total Device D issip a tion @ T/\ - 25°C

microt

Abstract: MMT2907 755s
Contextual Info: 6 3 6 7 2 5 5 MOTOROLA SC DE I t,3fc,7255 D D 3 Ô 5 1 ? 34 M O T O R O L A SC { D I O D E S / O P T O l D IO DE S/ OP TO 34C 38217 MICRO-T (continued) 7 ? MMT2907 - D 3 H i pnp GENERAL PURPOSE TRANSISTOR • designed for general-purpose switching and amplifier

BC160 MOTOROLA

Contextual Info: MO TG R C L A SC XSTRS/R F 15E D I fc>3fc.72S4 Gaat.Mt.2 2 I BC160, -6, -10, -16 BC161, -6, -10, -16 M A X IM U M RATINGS Sym bol BC 160 BC 161 U nit Collector-Emitter Voltage VC EO 40 60 Vdc C ollector-Base Voltage VCBO 40 60 Vdc Em itter-Base Voltage VEBO

BFX38 MOTOROLA

Abstract: bfx38 BFX40
Contextual Info: M O T O RO LA SC XSTRS/R F 12E D | t,3fc.?254 QOÛbMôO M | M A X I M U M R A T IN G S S ym bol BFX38 BFX40 U n it C o lle ctor-E m itter Voltage VCEO 55 75 Vdc Collector-Base Voltage VcBO 55 75 Vdc Em itter-Base Voltage Vebo 5.0 Vdc C o lle ctor C urrent — Continuous

P10T7

Contextual Info: b4E D MOTOROLA • fc.3fc.7E55 OOflbHgS 350 » H O T ? SEMICONDUCTOR TECHNICAL DATA MO TO RO LA SC D I O D E S / O P T O _ SCANSWITCH MR10120E P o w e r Rectifier For H igh and V ery H igh R e so lu tio n M o n ito rs M otorola Proforrad D«vica This state-of-the-art Power Rectifier is specifically designed for use as a Damper Diode

MRF545

Abstract: MRFC545 RF545
Contextual Info: MOTOROLA SC XSTRS/R F 4bE D • fc.3fc.72SH □ □ ' Ì H 7 4 7 MOTOROLA 3 ■ 110Tb T 3 B - n SEMICONDUCTOR TECHNICAL DATA MRF545 MRFC545 The RF Line PIMP Silicon High Frequency Transistors >C = -4 0 0 mA d e s ig n e d fo r h ig h - fr e q u e n c y a n d m e d iu m a n d h ig h re s o lu tio n c o lo r v id e o d is p la y

mjM6052

Contextual Info: M O T OR O L A SC XSTRS/R F 4bE » fe.3fc.72S4 O C H ^ T O MOTOROLA 4 • f 1 0 T b / z3 ? - 3 3 SEM ICONDUCTOR TECHNICAL DATA M JM 6052 Discrete Military Products (PNP) DM0 M JM 6059 (NPN) m an P N P /N P N S ilic o n C o m p le m e n ta ry P o w e r D a rlin g to n T ra n sisto rs

2SK993

Abstract: KJE 17 transistor sje 360 jb 5531 KJE transistor transistor sje 360 KJE transistor KJE F108 diode JE 33 F108
Contextual Info: MOS M O S Field Effect Pow er Transistor N ^ * ; i ^ \ 0r7 - MOS FET x i f f l 2 S K 9 9 3 là , N :* J ' f f i J f r ô M S y i / Z ' f # 7 K , M O S F E T T", 5 V H * I C < , y y ’c o f t m i z M M T t o i t V gs = 10 V, R DS o„ ^ 0 . 2 5 Q f ^D S (o n )

2SK1198

Abstract: TCA 700 v T04CO
Contextual Info: MOS Field Effect P ow er Transistor 2SK1198 N ^ ^ ^ N 0r7 — M O S FET m j i m 2SK1198 li, N MOS F E T ffits :* * <, ? * > m x ^ y f v r t m & i s t i x h ' > , ^ E l ¥ fi : mm) 1 0 .5 M A X . s s jg & x 4 4 .7 M A X . AC 7 r-7 °? Î : t* Iz M m X to

NEC .PA1400H

Abstract: PA1400H PA1428H TYA 0298 13X26X4 NEC PA1400H uPA1428H 0CJA pa-1400 PA1400
Contextual Info: NEC j tM'g- y<r7— C o m p o u n d P o w e r T ra n s is to r ¿¿PA 1428H mm i NPN Silicon Epitaxial Transistor Low Speed Switching Darlington Industrial Use 7"') > •9 • 9 J 7*y J 9 ■7 r 9 V TR • i ') ■ ECR^ ^ ^ 0 ¿ 'c 7 ) g x a ^ if ^ J-fff;:, y V J y[ K • i — 9 • 'J w — • 7

2sk991

Abstract: 2SK9 ASGA 2sk99
Contextual Info: MOS M O S Field Effect P ow er Transistor N - ^ * ; i " N or7— M O S FET I i f f l mm 2SK991 ii, Nf-^*;w^i?'"o,7- M 0 S FET T*. 5 V * « * I C <nf t * tw J : & i £ K ï f t * * » T f é ì ' M x ^ y f > ^ x T O : mm t t . 4.8 MAX. -1.3±0.2 y t '/ ' f

MPT100

Contextual Info: NEC j m * T / v rx Junction Field Effect Transistor A 2SK692 e c -r v k ° — m N-Channel Silicon Junction Field Effect Transistor ECM Impedance Converter n $ m m o g mi * o r - h i w s * mm V '. 4.0 ± 0.2 • v - x m z f j x - Y z «H&T-è E C M -f > &

2SK1108

Abstract: eska TDA7577
Contextual Info: NEC l Ÿ T 5 s— 5> • 2 /— h C B 5Ê Junction Field Effect Transistor / \ t Z 2 E C M S K 1 1 8 4 > \£ — i t f t 2 .0 ± 0 . 2 o r - F 46, • y - x x . v ï Y M l : N i ' - v Y , t - K, Î f K œ i Æ £ l * S * L t : < , ' £ f c -I 9 'i t t c f t ü f i ' o

RM4T

Abstract: r460 FET 2SK800 lg lx 221 TC6142 b0992 tt 22
Contextual Info: M O S Field Effect P ow er Transistor N ^ ^ ^ < 7 -M O S x 2S K 800ÌÌ, <, N - f - -y T x 4 ' > ' N> X/ > h m m s-ty — M OS > , Ü 5 J i & - v i - > X FET F E T T '^ ~ > 'f v ^ - fì : mm) f -> 7 ' * , D C -D C n > /< — # Î t ° V dss~ 450 V, o f i ^ > f f i Î Æ

2SK871

Abstract: 2SK87
Contextual Info: M O S B W f f - $ ] ^ s < r7 M O S Field Effect Pow er Transistor • /\°7 - M O S fe t if f f l 2SK871 i±, V t • ^ > ' ^ X / > hM^or7- MOS FET > f S Ì/ ljH S < , x -1“ V - f > 9 , 4 f t m m ¥ f ì : mm >'/ 0 3.2 + 0.2 f- > ^ S ïl, DC-DC a >s<- ? fcflüi tM".