JQC-3FC
Abstract: jqc-3fc relay JQC-3F jqc-3fc RELAY DC12V 3fc relay RELAY JQC-3FC DC12V relay nt73 JQC-3FC RELAY DC spdt JQC-3FC DC12v relay jqc 3fc
Text: NT73 JQC-3FC Operation condition NT73 (JQC-3FC) 03001003509 R C 16.5 16.5 US E158859 Features Superminiature, High power. Low coil power consumption. PC board mounting. Suitable for household appliances, automation system, electronic equipment, instrument and meter, communication
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Original
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E158859
500VDC)
IEC255-5
100m/s2
IEC68-2-27
IEC68-2-6
IEC68-2-21
IEC68-2-20
JQC-3FC
jqc-3fc relay
JQC-3F
jqc-3fc RELAY DC12V
3fc relay
RELAY JQC-3FC DC12V
relay nt73
JQC-3FC RELAY DC
spdt JQC-3FC DC12v relay
jqc 3fc
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jqc-3fc relay
Abstract: jqc-3fc jqc-3fc RELAY DC12V JQC-3F relay jqc-3fc 3fc relay jqc-3f-c jqc 3fc spdt JQC-3FC DC12v relay RELAY JQC-3FC DC12V
Text: Présente / Presents: DB LECTRO Inc. 3755 Place Java, Suite 140, Brossard, Québec, J4Y 0E4, Canada - T: 1-450-444-1424 / F: 1-450-444-4714 / www.dblectro.com NT73 JQC-3FC NHG RELAYS Operation condition NT73 (JQC-3FC) 03001003509 R C 16.5 16.5 US E158859
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Original
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E158859
500VDC)
IEC255-5
100m/s2
jqc-3fc relay
jqc-3fc
jqc-3fc RELAY DC12V
JQC-3F
relay jqc-3fc
3fc relay
jqc-3f-c
jqc 3fc
spdt JQC-3FC DC12v relay
RELAY JQC-3FC DC12V
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jqc-3fc
Abstract: jqc-3fc relay jqc-3fc RELAY DC12V relay nt73 JQC-3F JQC-3FC RELAY DC IEC 60255-5 jqc-3f-c RELAY JQC-3FC DC12V 3fc relay
Text: NT73 JQC-3FC Operation condition NT73 (JQC-3FC) 03001003509 R C 16.5 16.5 US E158859 Features Superminiature, High power. Low coil power consumption. PC board mounting. Suitable for household appliances, automation system, electronic equipment, instrument and meter, communication
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Original
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E158859
100m/s2
jqc-3fc
jqc-3fc relay
jqc-3fc RELAY DC12V
relay nt73
JQC-3F
JQC-3FC RELAY DC
IEC 60255-5
jqc-3f-c
RELAY JQC-3FC DC12V
3fc relay
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PDF
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jqc-3fc
Abstract: jqc-3fc relay JQC-3F jqc 3fc jqc-3fc RELAY DC12V relay JQC-3FC 3fc relay iec255 5a RELAY JQC-3FC DC12V relay nt73
Text: NT73 JQC-3FC CH0050407—2000 E158859 19.5x16.5×16.5 Features Superminiature, High power. Low coil power consumption. PC board mounting. Suitable for household appliance, automation system, electronic equipment, instrument and meter, communication facilities and remote control facilities.
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Original
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CH0050407--2000
E158859
DC12V
numberNT73JQC-3FC
10A12
IEC68-2-20
IEC68-2-3Test
IEC255-19-1
0A/250VAC
28VDC
jqc-3fc
jqc-3fc relay
JQC-3F
jqc 3fc
jqc-3fc RELAY DC12V
relay JQC-3FC
3fc relay
iec255 5a
RELAY JQC-3FC DC12V
relay nt73
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PDF
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3fc relay
Abstract: diode 1.5 ke 36 ca
Text: MOTOROLA SC XSTRS/R I F 1 4 E D H fc,3fc,72S4 0 0 0 ^ = 1 7 MOTOROLA □ I •l SEMICONDUCTOR TECHNICAL DATA IRF710 N-CHANNEL ENHANCEM ENT-M O DE SILICON GATE T M O S POWER FIELD EFFECT TRANSISTOR Part Number Vd s s IRF71Q 400 V rosion 3.6 n Th is T M O S Power F E T is designed for high voltage, high speed
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OCR Scan
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IRF710
IRF71Q
3fc relay
diode 1.5 ke 36 ca
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PDF
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9023A
Abstract: 3fc relay TPM relay 4 PIN TPM relay
Text: ^ - C O M M U N I C A T I O N S INC ' 3fc,E D • ‘iTbbM&t. D D D D I O D 2 ■ ZCI-v,.so-\ S Z-Ccanraunications Inc. “ iw a S S w r^ o S 309 vco m odel c-60i Hl PERFORMANCE- LOW COST VOLTAGE CONTROLLED OSCILLATOR PRODUCT DATA SHEET FEATURES * Small Size Pin Version
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OCR Scan
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c-60i
10KHz
C-601
9023A
3fc relay
TPM relay 4 PIN
TPM relay
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PDF
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3fc relay
Abstract: No abstract text available
Text: OKI electronic components OCM 1X4 , 1X5 SERIES Unidirectional Optical M O S Relay GENERAL DESCRIPTION The OCM1X4 and OCM1X5 Series are unidirectional DC optical MOS relays that provide high speed response and are capable of handling high-frequency signals. The input portion is a GaAs
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OCR Scan
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10-mA
0CM104/105
3fc relay
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PDF
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2SK1542
Abstract: s61001
Text: TOSHIBA 2SK1542 TOSHIBA FiEtD EFFECT TRANSISTOR SiuCON N CHANNEL MOS TVPE {L‘' -r-M O SlV 2 S K 1 542 h ig h s p e e d s w it c h in g a p p l ic a t io n s . RELAY DRIVE MOTOR DRIVE AND DC-DC CONVERTER APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm
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OCR Scan
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2SK1542
10rtl
2SK1542
s61001
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PDF
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MBS4991 equivalent
Abstract: SBS thyristor motorola thyristor MBS4991 mbs4993 thyristor device data BS4992
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBS4991 MBS4992 MBS4993 Silicon Bidirectional Switches Diode Thyristors . . . designed for full-wave triggering in Triac phase control circuits, half-wave SCR triggering application and as voltage level detectors. Supplied in an inexpensive
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OCR Scan
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O-226AA
MBS4991
MBS4992
MBS4993
CTO-226AA)
b3L72S5
MBS4991 equivalent
SBS thyristor
motorola thyristor
mbs4993
thyristor device data
BS4992
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PDF
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bsp106
Abstract: 3fc relay transistor marking B5 UCB756 USB002 transistor marking CS 712 transistor 459 transistor transistor C 459
Text: Philips Components Data sheet status Product specification date of Issue October 1990 BSP106 N-channel enhancement mode vertical D-MOS transistor QUICK REFERENCE DATA FEATURES SYMBOL • Very low RDS on • Direct interface to C-MOS, TTL, etc. • High-speed switching
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OCR Scan
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BSP106
OT223
OT223
D03bQ42
BSP106.
OT223.
bsp106
3fc relay
transistor marking B5
UCB756
USB002
transistor marking CS
712 transistor
459 transistor
transistor C 459
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PDF
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Untitled
Abstract: No abstract text available
Text: M O T O R O L A SC f X S T F S / R F . bflF J> • b3b72S4 00^0440 00Ö ■ M O T b MOTOROLA ■ SEM IC O N D U C T O R TECHNICAL DATA IRF830 P o w e r Field E ffe ct T ra n sisto r N-Channel Enhancement-Mode Silicon Gate This T M O S Power FET is designed for high
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OCR Scan
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b3b72S4
IRF830
Sy20AB)
Y145M
221D-02
O-220
Y145M,
314B03
O-220)
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PDF
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SKA10420
Abstract: SKA20420 SKA20440 SKA20421 VDE WE-S general cross references
Text: 12/93 1 N O U V E L L E G E N E R A T IO N DE R ELA IS STATIQ UE V E R T IC A L PO U R C IR C U IT IM PR IM E N E W G E N E R A T IO N SO LID STATE R ELA Y FOR PR IN T E D C IR C U IT BO ARD Les relais SKA sont la nouvelle génération de relais celduc pour circuit imprimé avec une
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OCR Scan
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460VAC)
SKA11421
SKA21421
SKA11440
SKA21440
SKA11441
SKA21441
SKA10420
SKA20420
SKA20440
SKA20421
VDE WE-S
general cross references
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F m E D I OQöTbMS b3b?aSM 3 I MOTOROLA •i SEMICONDUCTOR TECHNICAL DATA BUZ80A P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancem ent-Mode Silicon Gate This T M O S Power FET is designed for high voltage, high speed, low loss power switching applications, such
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OCR Scan
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BUZ80A
AN569,
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PDF
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2N6756
Abstract: No abstract text available
Text: MOTOROLA SC 14E D I b3b?aSM Q D Öl bic c. 1 " _r - 3 7W y XSTRS/R F MOTOROLA • I SEM ICONDUCTOR TECHNICAL DATA 2N6756 14 AMPERE N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR N-CHANNEL TMOS POWER FET These TM O S Power FETs are designed for low voltage, high
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OCR Scan
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2N6756
2N6756
19500/542A
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PDF
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MTM45N15
Abstract: 05gw tj3b
Text: MOTORGLA SC X S T R S /R IM E D I F b 3 t>7 2 SM O C H O U l M1 1 T -3 7 -/S MOTOROLA • SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTM45N15 P o w e r Field E ffe c t T ra n s isto r N-Channel Enhancement-Mode Silicon Gate TM OS TMOS POWER FET 45 AMPERES
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OCR Scan
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MTM45N15
0X163
197A02
MTM45N15
05gw
tj3b
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PDF
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TP10N25
Abstract: No abstract text available
Text: MOTOROLA SC CXSTRS/R F bftE D • b3fc.7ES4 GO' i f l TBl 557 « M O T b MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet P o w er Field E ffe c t Tran sistor N-Channel Enhancement M ode Silicon Gate TMOS POWER FET 10 AMPERES RDS on) = 0 « OHM
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OCR Scan
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21A-06
O-220AB)
Y145M
221D-02
O-220
Y145M,
314B03
O-220)
TP10N25
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PDF
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MTP2N85
Abstract: MTP2N90 td 3404 ap n1TM transistor 3405 motorola MTM2N85
Text: IM E M O TO RO LA SC X S T R S / R D I b 3 b 7 2 S 4 Q Q f i'n b ö 5 | F M O TO R O LA • SEMICONDUCTOR T E C H N IC A L D A T A MTM2N85 MTM2N90 MTP2N85 MTP2N90 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TM OS
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OCR Scan
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MTM2N85
MTM2N90
MTP2N85
MTP2N90
021SBSC
21A-04
O-220AB
0005KS)
T0-204M
MTP2N90
td 3404 ap
n1TM
transistor 3405 motorola
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PDF
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MTP12N10L
Abstract: No abstract text available
Text: MOTOROLA SC X S T R S /R F IM E D I t,3 b ? a S 4 □ 0 ^ 0 2 7 5 7 MOTOROLA - - 3 1 ? | - m SEMICONDUCTOR TECHNICAL DATA MTP12N08L MTP12N10L Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TM OS TMOS POWER FETs
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OCR Scan
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Y145M,
21A-04
O-220AB
MTP12N10L
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PDF
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mtp2p45
Abstract: TP2P45 45MTP 314B03 HF 1932
Text: MOT OROL A SC XSTRS/R b3b7254 F GDTñbHH 224 • MOTOROLA ■ SEM ICO NDUCTOR TECHNICAL DATA M TP 2P 45 M TP 2P 50 Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r P-Channel Enhancement-Mode Silicon Gate TT These TMOS Power FETs are designed fo r medium voltage,
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OCR Scan
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b3b7254
MTP2P50
21A-06
O-220AB)
Y145M
221D-02
O-220
Y145M,
AND-02
314B03
mtp2p45
TP2P45
45MTP
HF 1932
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PDF
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BUT36
Abstract: No abstract text available
Text: MOTOROLA r SC 6367254 ÎXSTRS/R MOTOROLA l b F> SC » F |t .3 t ,? a S M 96D C X S T R S /R F 80809 □ ü f lD f lD 'i D T - ' S S - X i MOTOROLA SEMICONDUCTOR BUT36 TECHNICAL DATA 24 AMPERES SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE
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OCR Scan
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BUT36
BUT36
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PDF
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8P08
Abstract: mtp8p08 MTP8P10 a043 221A-04 AN569 MTM8P08 MTM8P10 8P10 motorola
Text: MOTOROLA SC XSTRS/R im e F 'd I k3L?asM MOTOROLA □ a cì o a a 3 ? | - r - 3 m SEM IC O N D U C T O R TECHNICAL DATA M TM 8P08 M TM 8P10 MTP8P08 MTP8P10 Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r P-Channel Enhancem ent-M ode S ilic o n G ate T M O S
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OCR Scan
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21A-04
O-220AB
8P08
mtp8p08
MTP8P10
a043
221A-04
AN569
MTM8P08
MTM8P10
8P10 motorola
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PDF
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MTP8p10
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F böE ]> • b3b7ES4 OD'îflTO'î DOG ■ MOTb M O TO R O LA ■ SEMICONDUCTOR TECHNICAL DATA MTP8P10 Designer's Data Sheet P o w er Field E ffe c t Tran sisto r P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 8 AMPERES RDS(on) = 0.4 OHM
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OCR Scan
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MTP8P10
21A-06
O-220AB)
Y145M
221D-02
O-220
Y145M,
AND-02
314B03
O-220)
MTP8p10
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F böE D • b3b?254 QQTfiTS? 6b3 ■ MOTb MOTOROLA ■ S E M IC O N D U C T O R TECHNICAL DATA MTP15N05EL Designer's Data Sheet M otorola Preferred Device Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate Vi This Logic Level TM OS Power FET is designed for high
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OCR Scan
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MTP15N05EL
RuggedO-220AB)
Y145M
221D-02
O-220
Y145M,
314B03
O-220)
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PDF
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MTP4N50
Abstract: No abstract text available
Text: flOTOROLA SC i X S T R S / R F> bflE • b3b?c!S4 □ □TAbb'l bT4 ■ HOTb MOTOROLA ■ SEM IC O N D U C T O R ■ ■ ■ ■ ■ h h m h h h h h h b h h m m TECHNICAL DATA Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r N-Channel Enhancement-Mode
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OCR Scan
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21A-06
O-220AB)
Y145M
221D-02
O-220
Y145M,
314B03
O-220)
MTP4N50
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PDF
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