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    3DD13002B TRANSISTOR NPN Search Results

    3DD13002B TRANSISTOR NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    3DD13002B TRANSISTOR NPN Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: TO-92 Plastic-Encapsulate Transistors 3DD13002/ 3DD13002B TRANSISTOR NPN TO-92 FEATURE Power dissipation 1. EMITTER PCM: 900 mW (Tamb=25℃) 2. COLLECTOR Collector current ICM: 3. BASE 3DD13002: 1 A 3DD13002B: 0.8 A Collector-base voltage 600 V V(BR)CBO:


    Original     		3DD13002/ 3DD13002B 3DD13002: 3DD13002B: 200mA, 100mA PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002/3DD13002B TRANSISTOR（ NPN ） FEATURE Power dissipation PCM : 3DD13002 ： 1.2 W （Tamb=25℃） 3DD13002B： 1 W （Tamb=25℃） Collector current ICM :


    Original     		3DD13002/3DD13002B 3DD13002 3DD13002Bï 270TYP 050TYP PDF

    npn 600v to92

    Abstract: 3DD13002B TRANSISTOR NPN 3DD13002 3DD13002B transistor 600v. 1a. to 92
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002/ 3DD13002B TRANSISTOR NPN TO-92 FEATURE Power dissipation 1. EMITTER PCM: 900 mW (Tamb=25℃) 2. COLLECTOR Collector current ICM: 3. BASE 3DD13002: 1 A 3DD13002B: 0.8 A


    Original     		3DD13002/ 3DD13002B 3DD13002: 3DD13002B: 200mA, 100mA npn 600v to92 3DD13002B TRANSISTOR NPN 3DD13002 3DD13002B transistor 600v. 1a. to 92 PDF

    3DD13002

    Abstract: 3DD13002B
    Text: 3DD13002/B 3DD13002/ 3DD13002B TRANSISTOR NPN TO-92 FEATURE Power dissipation 1. EMITTER PCM: 900 mW (Tamb=25℃) 2. COLLECTOR Collector current ICM: 3. BASE 3DD13002: 1 A 3DD13002B: 0.8 A Collector-base voltage 600 V V(BR)CBO: Operating and storage junction temperature range


    Original     		3DD13002/B 3DD13002/ 3DD13002B 3DD13002: 3DD13002B: 200mA, 100mA 3DD13002 3DD13002B PDF

    3DD13002B

    Abstract: BR 610v
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002B TRANSISTOR（ NPN ） TO-92 FEATURES • power switching applications 1.EMITTER 2. COLLECTOR MAXIMUM RATINGS TA=25℃ unless otherwise noted Symbol Parameter


    Original     		3DD13002B 200mA 200mA, 100mA 3DD13002B BR 610v PDF

    3DD13002B

    Abstract: 3DD13002
    Text: CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors www.harom.cn 3DD13002B TRANSISTOR（ NPN ） TO-92 FEATURES • power switching applications 1.EMITTER 2. COLLECTOR MAXIMUM RATINGS TA=25℃ unless otherwise noted Symbol


    Original     		3DD13002B 200mA 200mA, 100mA 3DD13002B 3DD13002 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002B TRANSISTOR（ NPN ） TO-92 FEATURES • power switching applications 1.EMITTER 2. COLLECTOR MAXIMUM RATINGS Ta=25℃ unless otherwise noted Symbol Parameter


    Original     		3DD13002B PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002B TRANSISTOR（ NPN ） TO-92 FEATURES • power switching applications 1.EMITTER 2. COLLECTOR MAXIMUM RATINGS Ta=25℃ unless otherwise noted Symbol Parameter


    Original     		3DD13002B 200mA 200mA, 100mA PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002B TO-92 TRANSISTOR（NPN） FEATURE 1.EMITTER Power Switching Applications 2. COLLECTOR MAXIMUM RATINGS Ta=25℃ unless otherwise noted Symbol Parameter 3. BASE


    Original     		3DD13002B PDF