Untitled
Abstract: No abstract text available
Text: User’s Manual 78K0R/KE3 16-bit Single-Chip Microcontrollers PD78F1142 μPD78F1143 μPD78F1144 μPD78F1145 μPD78F1146 The 78K0R/KE3 has an on-chip debug function. Do not use this product for mass production because its reliability cannot be guaranteed after the on-chip debug function
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78K0R/KE3
16-bit
PD78F1142
PD78F1143
PD78F1144
PD78F1145
PD78F1146
78K0R/KE3
U17854EJ6V0UD00
U17854EJ6V0UD
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am29f400bb
Abstract: am29f400bb v am29f400 known good AM29F400B7 am29f400b 20185 AM29F400BT
Text: Am29F400B 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 volt-only operation for read, erase, and program operations — Minimizes system level requirements
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Am29F400B
8-Bit/256
16-Bit)
Am29F400
am29f400bb
am29f400bb v
am29f400 known good
AM29F400B7
20185
AM29F400BT
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amic a290021t-70
Abstract: A290021T-70 A290021TL-70 A29002 A290021 A290021L IN3064
Text: A29002/A290021 Series 256K X 8 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory Features n 5.0V ± 10% for read and write operations n Access times: - 55/70/90/120/150 max. n Current: - 20 mA typical active read current - 30 mA typical program/erase current
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A29002/A290021
amic a290021t-70
A290021T-70
A290021TL-70
A29002
A290021
A290021L
IN3064
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY Am29LV200 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
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Am29LV200
8-Bit/128
16-Bit)
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28f800b5
Abstract: 28F002BC 28F008 28F200B5 28F800 AB-60 ab-65 28f400
Text: E AB-60 APPLICATION BRIEF 2/4/8-Mbit SmartVoltage Boot Block Flash Memory Family Overview December 1996 Order Number: 292154-004 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of
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AB-60
AP-611
AB-65
28f800b5
28F002BC
28F008
28F200B5
28F800
AB-60
28f400
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M29W400B
Abstract: FBGA48 M29W400 M29W400BB M29W400BT M29W400T
Text: M29W400T M29W400B 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory NOT FOR NEW DESIGN M29W400T and M29W400B are replaced respectively by the M29W400BT and M29W400BB 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS
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M29W400T
M29W400B
512Kb
256Kb
M29W400T
M29W400B
M29W400BT
M29W400BB
FBGA48
M29W400
M29W400BB
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MT28F002B3
Abstract: MT28F200B3
Text: 2Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F002B3 MT28F200B3 3V Only, Dual Supply Smart 3 FEATURES 40-Pin TSOP Type I 48-Pin TSOP Type I • Five erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Two main memory blocks
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MT28F002B3
MT28F200B3
40-Pin
48-Pin
16KB/8K-word
100ns
MT28F200B3,
16/256K
MT28F002B3
MT28F200B3
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JESD97
Abstract: M29F400 M29F400B M29F400BB M29F400BT
Text: M29F400BT M29F400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block single supply Flash memory Feature summary • Single 5 V ± 10% supply voltage for program, erase and read operations ■ Access time: 45 ns ■ Programming time – 8 µs per Byte/Word typical
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M29F400BT
M29F400BB
512Kb
256Kb
JESD97
M29F400
M29F400B
M29F400BB
M29F400BT
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SST49LF020A
Abstract: No abstract text available
Text: 2 Mbit LPC Flash SST49LF020A SST49LF020A2Mb LPC Flash Data Sheet FEATURES: • LPC Interface Flash – SST49LF020A: 256K x8 2 Mbit • Conforms to Intel LPC Interface Specification 1.0 • Flexible Erase Capability – Uniform 4 KByte Sectors – Uniform 16 KByte overlay blocks
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SST49LF020A
SST49LF020A2Mb
SST49LF020A:
S71206-08-000
SST49LF020A
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A25L05PT
Abstract: A25L05PU 25L05P A25L05P A25L10P A25L20P 25L10P
Text: A25L20P/A25L10P/A25L05P Series 2Mbit / 1Mbit / 512Kbit, Low Voltage, Serial Flash Memory With 85MHz SPI Bus Interface Document Title 2Mbit / 1Mbit / 512Kbit, Low Voltage, Serial Flash Memory With 85MHz SPI Bus Interface Revision History History Issue Date
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A25L20P/A25L10P/A25L05P
512Kbit,
85MHz
512Kbit
203mm
A25L05PT
A25L05PU
25L05P
A25L05P
A25L10P
A25L20P
25L10P
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ba qu
Abstract: TC58F401
Text: INTEGRATED TOSHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58F400F / FT - 90, - 1 0 TC58F401F / FT - 90, - 1 0 SILICON GATE CMOS TENTATIVE DATA 4M 524,288 W O RD S x 8 BITS/262,144 W ORDS x16 BITS CMOS FLASH M EM O RY DESCRIPTION
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TC58F400F
TC58F401F
BITS/262
TC58F400/401
TC58F4
TC58F400)
00000h
01FFFh
02000h
ba qu
TC58F401
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Untitled
Abstract: No abstract text available
Text: ' Pt: LiP,MI i AR AMD* Am29F200A 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ High performance
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Am29F200A
8-Bit/128
16-Bit)
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am29f400bb
Abstract: No abstract text available
Text: 'RH .v'IKMF AM Dii Am29F400B 4 Megabit (512 K x 8-Bit/256 K x 16-Bit dMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 vott-only operation for read, erase, and program operations — Minimizes system level requirements
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Am29F400B
8-Bit/256
16-Bit)
Am29F400
am29f400bb
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am29f400b
Abstract: am29f400bb 22AB AM29F400BT
Text: AMDZ1 P R E L IM IN A R Y Am29F400B 4 Megabit 512 K X 8-Bit/256 K x 16-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 volt-only operation for read, erase, and program operations ■ Top or bottom boot block configurations
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Am29F400B
8-Bit/256
16-Bit)
Am29F400
am29f400bb
22AB
AM29F400BT
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Untitled
Abstract: No abstract text available
Text: intJ. 2-MBIT 128K x 16, 256K x 8 LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 28F200BL-T/B, 28F002BL-T/B m Low Voltage Operation for Very Low Power Portable Applications — Vcc = 3.0V-3.6 V • Automatic Power Savings Feature — 0.8 mA Typical Ice Active Current in
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28F200BL-T/B,
28F002BL-T/B
x8/x16
28F200BL-T,
28F200BL-B
16-bit
32-bit
28F002BL-T,
28F002BL-B
16-KB
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Untitled
Abstract: No abstract text available
Text: ISSP IS28F002BV/BLV 262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation A u to m a te d B y te W rite an d B lo c k E rase — In d u s try -S ta n d a rd C o m m a n d U ser
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IS28F002BV/BLV
16-KB
IS28F002BVB-80TI
40-pin
IS28F002BVT-80TI
IS28F002BLVB-120TI
IS28F002BLVT-120TI
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Untitled
Abstract: No abstract text available
Text: in tj 2-MBIT 128K x 16, 256K x 8 BOOT BLOCK FLASH MEMORY FAMILY 28F200BX-T/B, 28F002BX-T/B • x8/x16 Input/Output Architecture — 28F200BX-T, 28F200BX-B — For High Performance and High Integration 16-bit and 32-bit CPUs ■ x8-only Input/Output Architecture
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28F200BX-T/B,
28F002BX-T/B
x8/x16
28F200BX-T,
28F200BX-B
16-bit
32-bit
28F002BX-T
28F002BX-B
16-KB
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Untitled
Abstract: No abstract text available
Text: 28F400BX-T/B, 28F004BX-T/B 4 MBIT 256K x16, 512K x8 BOOT BLOCK FLASH MEMORY FAMILY • x8/x16 Input/Output Architecture — 28F400BX-T, 28F400BX-B — For High Performance and High Integration 16-bit and 32-bit CPUs ■ Very High-Performance Read — 60/80 ns Maximum Access Time
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28F400BX-T/B,
28F004BX-T/B
x8/x16
28F400BX-T,
28F400BX-B
16-bit
32-bit
28F004BX-T,
28F004BX-B
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Untitled
Abstract: No abstract text available
Text: in te l A28F400BX-T/B 4-MBIT 256K x16, 512K x8 BOOT BLOCK FLASH MEMORY FAMILY Automotive x8/x16 Input/Output Architecture — A28F400BX-T, A28F400BX-B — For High Performance and High Integration 16-bit and 32-bit CPUs Optimized High Density Blocked Architecture
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A28F400BX-T/B
x8/x16
A28F400BX-T,
A28F400BX-B
16-bit
32-bit
APA28F400BX-T90
APA28F400BX-B90
A28F200BX
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Untitled
Abstract: No abstract text available
Text: in tj. 28F400BX-T/B, 28F004BX-T/B 4 MBIT 256K x16, 512K x8 BOOT BLOCK FLASH MEMORY FAMILY • x8/x16 Input/Output Architecture — 28F400BX-T, 28F400BX-B — For High Performance and High Integration 16-bit and 32-bit CPUs ■ Very High-Performance Read
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28F400BX-T/B,
28F004BX-T/B
x8/x16
28F400BX-T,
28F400BX-B
16-bit
32-bit
28F004BX-T,
28F004BX-B
16-KB
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intel e28f
Abstract: 28f400 BYTE PROGRAM
Text: [p[M3 [G>U T [P^lWOIl in te l 4-MBIT 256K x 16, 512K x 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F400BV-T/B, 28F004BV-T/B, 28F400CV-T/B Intel Sm artVoltage Technology — 5V or 12V Pro g ram /E rase — 3.3V or 5V Read O peration — 60% Faster Typical Program m ing at
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28F400BV-T/B,
28F004BV-T/B,
28F400CV-T/B
AP-604
28F002/200BX-T/B
28F002/200BL-T/B
28F004/400BL-T/B
28F004/400BX-T/B
AP-363
intel e28f
28f400 BYTE PROGRAM
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Untitled
Abstract: No abstract text available
Text: in te i. 28F200BL-T/B, 28F002BL-T/B 2-MBIT 128K x 16, 256K x 8 LOW POWER BOOT BLOCK FLASH MEMORY FAMILY • Low Voltage Operation for Very Low Power Portable Applications — Vcc = 3.0V-3.6V ■ Expanded Temperature Range 20°C to +70°C ■ x8/x16 Input/Output Architecture
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28F200BL-T/B,
28F002BL-T/B
x8/x16
28F200BL-T,
28F200BL-B
16-bit
32-bit
28F002BL-T,
28F002BL-B
28F200B
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY in te l 28F002BC 2-MBIT 256K X 8 BOOT BLOCK FLASH MEMORY High Performance Read — 80/120 ns Max Access Time 40 ns Max. Output Enable Time Low Power Consumption — 20 mA Typical Read Current x8-Only Input/Output Architecture — Space-Constrained 8-bit
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28F002BC
16-KB
96-KB
128-KB
AP-610
28F002/200BX-T/B
28F004/400BX-T/B
28F002/200BV-T/B
28F004/400BV-T/B
4fl2bl75
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY A M Dii Am29LV400B 4 Megabit 512 K X 8-Bit/256 K X 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 2.7 to 3.6 volt read and w rite operations for battery-powered applications
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Am29LV400B
8-Bit/256
16-Bit)
Am29LV400
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