Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC857S Multi-Chip TRANSISTOR PNP SOT-363 APPLICATION This device is designed for general purpose amplifier applications MARKING : 3C MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-363
BC857S
OT-363
-10mA
-100mA
-10mA
100MHz
200Hz
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC857S Multi-Chip TRANSISTOR PNP SOT-363 FEATURES Power dissipation C1 B2 PCM : 300 mW(Tamb=25℃) E2 Collector current ICM : -200 mA Collector-base voltage V V(BR)CBO : -50
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OT-363
BC857S
OT-363
-10mA
-100mA
-10mA
100MHz
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC857S Multi-Chip TRANSISTOR PNP SOT-363 FEATURES Power dissipation C1 PCM : 300mW(Ta=25℃) B2 E2 Collector current ICM : -200mA Collector-base voltage V(BR)CBO : -50V
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OT-363
BC857S
OT-363
300mW
-200mA
-10mA
-100mA
-10mA
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BC857S
Abstract: No abstract text available
Text: BC857S PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 .055 1.40 .047(1.20) o 8 o .026TYP (0.65TYP) .021REF (0.525)REF * Features .053(1.35) .045(1.15) .096(2.45) .085(2.15) Power dissipation PCM : 0.3 W (Tamp.= 25 C)
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BC857S
OT-363
026TYP
65TYP)
021REF
01-Jan-2006
BC857S
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Untitled
Abstract: No abstract text available
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components PNP Plastic-Encapsulate Features x x Multi-chip Transistor Ultra-Small Surface Mount Package x Case Material: Molded Plastic.
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BC857S
300mW
OT-363
OT-363,
65Nominal
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Untitled
Abstract: No abstract text available
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components PNP Plastic-Encapsulate Features x x Multi-chip Transistor Ultra-Small Surface Mount Package x Case Material: Molded Plastic.
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BC857S
300mW
OT-363
OT-363,
65Nominal
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3c sot363
Abstract: No abstract text available
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components BC857S PNP Plastic-Encapsulate Features x x Multi-chip Transistor Ultra-Small Surface Mount Package x Case Material: Molded Plastic. UL Flammability
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BC857S
300mW
OT-363
3c sot363
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Untitled
Abstract: No abstract text available
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components BC857S PNP Plastic-Encapsulate Features x x Multi-chip Transistor Ultra-Small Surface Mount Package x Case Material: Molded Plastic. UL Flammability
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BC857S
300mW
OT-363
OT-363
65Nominal
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sot-363 MARKING
Abstract: sot-363 marking 3C
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components PNP Plastic-Encapsulate Features x x • • • BC857S Multi-chip Transistor Ultra-Small Surface Mount Package
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BC857S
300mW
OT-363
OT-363
sot-363 MARKING
sot-363 marking 3C
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Untitled
Abstract: No abstract text available
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components Features • x x • • • BC857S PNP Plastic-Encapsulate Halogen free available upon request by adding suffix "-HF"
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BC857S
300mW
OT-363
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zener 751
Abstract: SMF12A-GS08 GSOT08C-GS08 SOD-923 zener GSOT36C-GS08 SMF33A-GS08 DO215AA 751-1397-1-ND 751-1415-1-ND SMF6V5A-GS08
Text: Transient Voltage Suppressors Cont. ESD TVS Fig. 1 SC-74 Dimensions in mm 1.55 6 5 4 1.70 1 2 3 6C A2 5A C3 4C 3 1 2 2.40 2.70 1 3 2 1 B. A. 2 1.35 2.20 Fig. 5 SOT-23 1.70 1 3 2 1.70 Breakdown Voltage VBR Min. Nom. Max. 5.32 6.0 6.4 6.2 13.3 13.3 5.32
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SC-74
OT-23
SC-89
OD-323
OT-323
SMAJ100A-E3/1GI-ND
A-E3/61GICT-ND
A-E3/61GITR-ND
SMAJ10A-E3/61GICT-ND
SMAJ10A-E3/61GITR-ND
zener 751
SMF12A-GS08
GSOT08C-GS08
SOD-923 zener
GSOT36C-GS08
SMF33A-GS08
DO215AA
751-1397-1-ND
751-1415-1-ND
SMF6V5A-GS08
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c639
Abstract: c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423
Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05
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3-03W
4-03W
5-03W
OD-123
OD-323
OT-23
c639
c33840
transistor C639
c33725
c877
C63716
marking code 67a sot23 6
c878
c33740
F423
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transistor C639
Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W
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3-02W
3-03W
3-04W
3-05W
3-06W
4-02W
4-03W
4-04W
4-05W
4-06W
transistor C639
c639
transistor f423
F423
transistor f422
transistor f422 equivalent
cx59
C640-10
f422
c640 transistor
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MARKING 68W SOT-23
Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Text: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06
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25-04W
25-05W
25-06W
25-07W
3904S
846AT
846BW
846BT
847AT
847BW
MARKING 68W SOT-23
marking code 67a sot23 6
sot143 Marking code 5B
baw 92
SOT-363 marking CF
54 fk SOT-23
BAT 545
SOT-363 marking BF
sot-89 MARKING CODE BN
MARKING CODE DH SOT 23
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sot-363 marking 3C
Abstract: lf 10193
Text: Sii 900_ Vishay Siliconix New Product Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS(V) Id (A ) r DS(on) (f i ) 0.480 e V q s = 10 V 0.63 0.700 V q s = 4.5 V 0.52 30 SOT-363 SC-70 (6-LEADS) Marking Code Lot Traceability and Oate Code I—- Part # Code
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OCR Scan
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OT-363
SC-70
S-02367--
23-Oct-OO
sot-363 marking 3C
lf 10193
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sot-363 marking 3C
Abstract: maxim MARKING CODE 21 71179
Text: S ii 400_ Weiv Product Vishay Siliconix N-Channel 20-V D-S M OSFET PRODUCT SUMMARY r DS(on) (£2) b(A) 0.150 e V GS = 4.5 V 1.7 0.235 e V GS = 2.5 V 1.3 VDS(V) 20 SOT-363 SC-70 (6-LEADS) Marking Code XX £ Lot Traceability and Date Code — Part# Code
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OT-363
SC-70
150cC
S-00826--
24-Apr-00
sot-363 marking 3C
maxim MARKING CODE 21
71179
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Si1912EDH
Abstract: No abstract text available
Text: SM912EDH New Product Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY V d s (V ) 20 •d ( A ) r D S {on) ( & ) 0.280 @ V Gs = 4.5 V 1.28 0.360 9 VGS = 2.5 V 1.13 0.450 @ VGS = 1.8 V 1.0 SOT-363 SC-70 (6-LEADS) r • TrenchFET Power MOSFETS: 1.8-V Rated
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SM912EDH
SC-70
OT-363
SC-70
Conduction25°
S-03176--
05-Mar-01
1912EDH
05-Mar-01
Si1912EDH
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SII907
Abstract: 223S
Text: _ S ii 907 Vishay Siliconix New Product Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY V d s r D S (o n) ( ß ) Id (A) 0.650 @ VGS = -4 .5 V ± 0 .5 6 (V ) -1 2 0.925 @ VGS = -2 .5 V ± 0 .4 7 1.310 @ V qq = -1 .8
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OT-363
SC-70
150cC
S-99184--Rev.
01-Nov-99
S-99184--
SII907
223S
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sot363 marking qs
Abstract: No abstract text available
Text: TN0205A/AD Vishay Siliconix New Product N-Channel 20-V MOSFET PRODUCT SUMMARY V d s V 20 r DS(on) ( f i ) lD(mA) 2.0 0 VGS = 4.5 V 250 2.5 0 V GS = 2.5 V 150 FEATURES BENEFITS APPLICATIONS • • • • • Ease in Driving Switches • Low Offset (Error) Voltage
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TN0205A/AD
OT-363
SC-70
TN0205A:
TN0205AD:
TN0205A
S-04279--
16-Jul-01
sot363 marking qs
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sot363 marking qs
Abstract: No abstract text available
Text: SÌ1913EDH New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY V d s (V ) 0.490 @ VGS = -4 .5 V -2 0 0.750 @ Vqs = "2 .5 1.10 @ VGs = -1 .B • TrenchFET Power MOSFETS: 1.8-V Rated • ESD Protected: 3000 V • Thermally Enhanced SC-70 Package
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1913EDH
SC-70
OT-363
SC-70
S-03175--
05-Mar-01
SM913EDH
sot363 marking qs
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LD 25 V
Abstract: SM410
Text: SÌ1410EDH New Product Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY V d s (V) Id (A) * D S (o n ) ( ^ ) 20 • TrenchFET Power MOSFETS: 1.8-V Rated • ESD Protected: 2000 V • Thermally Enhanced SC-70 Package 0.070 @ V GS = 4.5 V
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1410EDH
SC-70
OT-363
SC-70
S-03185--
05-Mar-01
LD 25 V
SM410
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Untitled
Abstract: No abstract text available
Text: TP0205A/AD Vishay Siliconix New Product P-Channel 20-V D-S MOSFETs, Low-Threshold PRODUCT SUMMARY VDS(V) -2 0 r D S (o n ) ( ß ) lD (mA) 3.8 @ V q s = -4 -5 V -1 8 0 5.0 @ V Gs = -2 .5 V -1 0 0 FEATURES BENEFITS APPLICATIONS • • • • • • •
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TP0205A/AD
OT-323
OT-363
S-04279--
16-Jul-01
16-Ju
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c639
Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Text: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04
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3-03W
4-03W
5-03W
OD-123
OD-323
OT-23
c639
C63716
C337 40
sot-23 MARKING 636
MARKING 68W SOT-23
C-639
F959
sot143 Marking code 5B
B304A
sot-89 MARKING CODE BN
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Untitled
Abstract: No abstract text available
Text: 1 W h ß tHEWLETT* miti» P AC KA R D 3.0 GHz Low Noise Silicon MMIC Amplifier Technical Data INA-54063 Features Surface Mount Package SOT-363 SC-70 Applications Pin Connections and Package Marking • • • • • • Ultra-Miniature Package Single 5 V Supply (29 mA)
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INA-54063
OT-363
SC-70)
OT-363
OT-143
5965-5364E
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