3B3 DIODE Search Results

3B3 DIODE Result Highlights (5)

Part	Manufacturer	Description
CUZ24V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 24 V, USC
XCUZ13V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 13.0 V, USC
XCUZ36V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 36.0 V, USC
CUZ12V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 12 V, USC
MUZ5V6	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 5.6 V, USM

3B3 DIODE Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
ML5415N Abstract: No abstract text available Text: b lE D • bEMTfiST M IT S U B IS H I Q O lHbD l DISC R ETE 3b3 ■ M IT S MITSUBISHI LASER DIODES ML5XX5 SERIES SC FOR OPTICAL INFORMATION SYSTEMS DESCRIPTION FEATURES ML5XX5 is a h ig h -p o w e r AIGaAs semiconductor • High power (35m W CW, 45mW pulse)	OCR Scan	825nm ML5415N	PDF
FIT4 diode Abstract: No abstract text available Text: ADC0831/ADC0832/ADC0834/ADC0838 bSDHEM [3073^03 3b3 • NSC2 5flE D NATL SEMICOND LINEAR 7 = 5 H O -O B S3 National mm Semiconductor ADC0831/ ADC0832/ADC0834 and ADC0838 8-Bit Serial I/O A/D Converters with Multiplexer Options General Description The ADC0831 series are 8-bit successive approximation	OCR Scan	ADC0831/ADC0832/ADC0834/ADC0838 ADC0831 ADC0834CCN ADC0834CCWM ADC0838BJ ADC0838BCJ ADC0838BCV ADC0838BCN ADC0838CCJ ADC0838CCV FIT4 diode	PDF
DP07C Abstract: Transistor RKU SEA5 bft 5f g1 NCN20 transistor 1Ht 4n35 equivalent Text: 7 Ô 1 1 0 7 3 0 0 1 7 3 1 2 3b3 • RKü RCV229ATF/2-BA Rockwell Integrated V.22 bis/V.42 bis Data/Fax/Voice Modem Device Set with Telephone Answering Machine TAM) Support INTRODUCTION FEATURES The merging of the persona) computer and telephone is the first step in the evolution of the PC to a full-fledged	OCR Scan	RCV229ATF/2-BA annota08 0GN03 MD116C4 MD116C4 DP07C Transistor RKU SEA5 bft 5f g1 NCN20 transistor 1Ht 4n35 equivalent	PDF
2N3425 MOTOROLA Abstract: 2N3425 MD2369 Text: MOTOROLA SC XSTRS/R F R ating E D \| fe,3fc,7aSM 0Qflt,3B3 T \| 1 2 Sym bol V a lu e Collector-Em itter Volta g e VcE O 15 Vdc Collector-Em itter Volta g e V C ER 20 Vdc Collector-B ase Volta g e VCBO 40 Vdc Em itter-Base V olta g e VEBO 5.0 Total Device D issip a tion @ T/\ - 25°C	OCR Scan	2N3425 MD2369 2N3425 MOTOROLA 2N3425	PDF
zener 3B2 Abstract: 3b3 zener diode 3B3 diode zener B51 DAM3B30 Text: SURGE SUPPRESSOR DIODE DAM3B OUTLINE DRAWING Unit in mm inch φ 3.6 (0.14) • High transient reverse power capability suitable for protecting automobile electronic components etc. • Diffused-junction. Resin encapsulated. 27CA Type mark (Red) 6 (0.24) φ 0.8	Original	58MIN. zener 3B2 3b3 zener diode 3B3 diode zener B51 DAM3B30	PDF
zener B51 Abstract: DAM3B27 DAM3B10 DAM3B11 DAM3B12 DAM3B13 DAM3B15 DAM3B16 DAM3B18 DAM3B20 Text: SURGE SUPPRESSOR DIODE DAM3B OUTLINE DRAWING Unit in mm inch φ 3.6 (0.14) • High transient reverse power capability suitable for protecting automobile electronic components etc. • Diffused-junction. Resin encapsulated. 27CA Type mark (Red) 6 (0.24) φ 0.8	Original	26MIN. 58MIN. zener B51 DAM3B27 DAM3B10 DAM3B11 DAM3B12 DAM3B13 DAM3B15 DAM3B16 DAM3B18 DAM3B20	PDF
DAM3B10 Abstract: DAM3B11 DAM3B12 DAM3B13 DAM3B15 DAM3B16 DAM3B18 DAM3B20 DAM3B22 zener B51 Text: SURGE SUPPRESSOR DIODE DAM3B OUTLINE DRAWING Unit in mm inch φ 3.6 (0.14) • High transient reverse power capability suitable for protecting automobile electronic components etc. • Diffused-junction. Resin encapsulated. 27CA Type mark (Red) 6 (0.24) φ 0.8	Original	26MIN. 58MIN. DAM3B10 DAM3B11 DAM3B12 DAM3B13 DAM3B15 DAM3B16 DAM3B18 DAM3B20 DAM3B22 zener B51	PDF
3b3 zener diode Abstract: zener B51 zener diode b51 DAM3B16 DAM3B18 3B 334 DAM3B10 DAM3B11 DAM3B12 DAM3B13 Text: SURGE SUPPRESSOR DIODE DAM3B OUTLINE DRAWING 長 27CA 26MIN. 1.02 58MIN. (2.28) • 大きな逆方向損失が許容できます。（自動車電装品の保護用等） • 拡散接合形レジンモールド構造 φ 0.8 (0.03) Cathode band (Red) 26MIN.	Original	26MIN. 58MIN. 3b3 zener diode zener B51 zener diode b51 DAM3B16 DAM3B18 3B 334 DAM3B10 DAM3B11 DAM3B12 DAM3B13	PDF
ECG3100 Abstract: lc 3101 led ECG3102 ECG3103 ECG3105 transistor p58 ECG3101 ECG3104 transistor p26 ecg 100 transistor Text: Infrared Detector D io d e s ECG Type Description ECG3033 Infrared PIN Detector Diode Reverse Voltage V r IV Max. Dark Current ID »A) Min Light Current ILI/jA) Power Dissipation PD (mW) Rise Time tr (nS) Typ Detection Angle Typ Detection Wavelength (nm)	OCR Scan	ECG3033 ECG3033 ECG3100 ECG3101 lc 3101 led ECG3102 ECG3103 ECG3105 transistor p58 ECG3104 transistor p26 ecg 100 transistor	PDF
C16T10Q Abstract: 0x118 l57 104 C16T09Q F1G6 3B3 diode Text: SCHOTTKY BARRIER DIODE 17.7 a / 9 0 ~ C16T09Q CL6T10Q ioov SQUARE-PAK FEA TURES Similar to TO-263AB Case, Surface Mount Device ° Dual Diodes - Cathode Common « Low Forward Voltage Drop ° Low Power Loss, High Efficiency » High Surge Capability « 30 Volts through 100 Volts Types Available	OCR Scan	C16T09Q CL6T10Q O-263AB 0X118) C16T10Q 100kHt bbl5123 C16T10Q 0x118 l57 104 F1G6 3B3 diode	PDF
A15F Abstract: a15a Text: H A RR IS S E n i C O N D S E CT OR m bûE ] • 43 02 E7 1 QQ SD Bl l 427 H H A S A1RA A1RF H a r r is SEMICONDUCTOR M » ff y M M ff ff 3A, 50V - 100V Diodes December 1993 Package Features AL-3 • Hlgh-Temperature Metallurglcally Bonded, No Com pression Contacts as Found In Diode-Constructed	OCR Scan	MIL-STD-19500 Symbo100 A15F a15a	PDF
marking v3 Abstract: No abstract text available Text: Ordering number:ENN6264 Diffused Junction Type Silicon Composite Varactor ¡SANYO, SVC383 AM Low Voltage Electronic Tuning Applications Features • Twin type varactor diode for low-voltage AM electronic tuning use. . • Low voltage 6.5V . • High Q. • Possible to offer the SVC383 devices in a tape reel	OCR Scan	ENN6264 SVC383 SVC383 SVC383-applied SVC383] 73099GI B3B37 Q0E3336 marking v3	PDF
3b3 zener diode Abstract: DIODE ZZ160 ZZ36 P200A ZZ160 ZZ16 ZZ-36 ZZ160S ZZ16S P68A Text: ZZ16.ZZ160, ZZ16S.ZZ160S Bidirectional Zener Diodes Features: - High energy absorption in both directions - Extremely fast response - Especially designed to protect telephone circuits and other voltage-sensitive devices including semiconductors <N 5\|*	OCR Scan	ZZ160, ZZ16S. ZZ160S DO-13 15Z160 ZZ110 ZZ160 3b3 zener diode DIODE ZZ160 ZZ36 P200A ZZ16 ZZ-36 ZZ160S ZZ16S P68A	PDF
5B1 zener diode Abstract: 6b2 zener diode zener diode 4B3 B20 zener diode smd diode b13 zener diode b27 b16 zener b36 smd diode zener b27 smd diode code B12 Text: MM3Z2B4~MM3ZB39 ±2% SILICON PLANAR ZENER DIODES FEATURES ● Total power dissipation: max. 200 mW ● Small plastic package suitable for surface mounted design DESCRIPTION Silicon planar zener diode in a small plastic SMD SOD-323 package Absolute Maximum Ratings (Ta = 25oC)	Original	MM3ZB39 OD-323 OD-323 5B1 zener diode 6b2 zener diode zener diode 4B3 B20 zener diode smd diode b13 zener diode b27 b16 zener b36 smd diode zener b27 smd diode code B12	PDF

smd 5b1 Abstract: smd transistor 5B1 5B1 zener diode smd transistor marking ey B20 zener diode planar transistor 5B1 ez 724 zener diode 4B3 B15 diode smd b36 smd diode Text: MM3Z2B4~MM3ZB39 ±2% SILICON PLANAR ZENER DIODES FEATURES ● Total power dissipation: max. 200 mW ● Small plastic package suitable for surface mounted design DESCRIPTION Silicon planar zener diode in a small plastic SMD SOD-323 package Absolute Maximum Ratings (Ta = 25oC)	Original	MM3ZB39 OD-323 OD-323 smd 5b1 smd transistor 5B1 5B1 zener diode smd transistor marking ey B20 zener diode planar transistor 5B1 ez 724 zener diode 4B3 B15 diode smd b36 smd diode	PDF
ZENER B18 Abstract: b16 zener zener b27 zener 5B6 5B1 IR zener 5B1 zener 6b8 zener 3b9 zener B13 zener b30 Text: MM3Z2B4 . MM3B47 200 mW - 2% MM3Z2B4 . MM3B47 (200 mW - 2%) Surface mount Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden für die Oberflächenmontage Version 2012-08-22 Maximum power dissipation Maximale Verlustleistung 1.7±0.1 1±0.1 Nominal Z-voltage – Nominale Z-Spannung	Original	MM3B47 OD-323 UL94V-0 ZENER B18 b16 zener zener b27 zener 5B6 5B1 IR zener 5B1 zener 6b8 zener 3b9 zener B13 zener b30	PDF
Untitled Abstract: No abstract text available Text: MM3Z2B4 . MM3Z47B 200 mW - 2% MM3Z2B4 . MM3Z47B (200 mW - 2%) Surface mount Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden für die Oberflächenmontage Version 2012-08-22 Maximum power dissipation Maximale Verlustleistung 1.7±0.1 1±0.1 Nominal Z-voltage – Nominale Z-Spannung	Original	MM3Z47B OD-323 UL94V-0	PDF
Schottky Diode 40V 2A Abstract: NEC schottky diode product List CRG16GT TEMSVB21c106m8r Schottky Diode B29 capacitor 0.2uf 50v GRM39F103Z50PT TEMSVB21 RK73K1JTD 1a4 capacitor Text: µ PD72872 Reference Design Document Number: SSG-Z-140 • The information in this document is current as of December, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or	Original	PD72872 SSG-Z-140 GRM39F105Z10PT TEMSVB21A226M8R TEMSVB21C106M8R TESVD21A226M12R GHM1525B472K250 SLF10145T-471MR47 DSX630G24R576MHZ NFM4516P13C204F Schottky Diode 40V 2A NEC schottky diode product List CRG16GT TEMSVB21c106m8r Schottky Diode B29 capacitor 0.2uf 50v GRM39F103Z50PT TEMSVB21 RK73K1JTD 1a4 capacitor	PDF
u1620 Abstract: motorola u1620 rectifier u1620 U1620 diode u1620 application note MURF1620CT motorola u1620 diode AN1040 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information M U RF1620CT SW IT C H M O D E Power Rectifiers M otorola Preferred Device D esigned for u se in switching power supplies, inverters and a s free wheeling diodes, these state-of-the-art devices have the following features:	OCR Scan	E693690) AN1040. u1620 motorola u1620 rectifier u1620 U1620 diode u1620 application note MURF1620CT motorola u1620 diode AN1040	PDF
ps817 Abstract: PS8170 PI3B162244 PI3B16244 Text: PI3B16244 Ω PI3B162244 25Ω	Original	PI3B16244 PI3B162244 16-Bit, series16244 PS8170B ps817 PS8170 PI3B162244 PI3B16244	PDF
16244 Abstract: ps817 PI3B162244 PI3B16244 4a3 diode 3B2 diode Text: PI3B16244 Ω PI3B162244 25Ω	Original	PI3B16244 PI3B162244 16-Bit, PS8170B 16244 ps817 PI3B162244 PI3B16244 4a3 diode 3B2 diode	PDF
48-PIN Abstract: PI5C162244 PI5C16244 Text: PI5C16244/162244 16-BIT BUS SWITCH BUFFER PI5C16244 Ω PI5C162244 25Ω	Original	PI5C16244/162244 16-BIT PI5C16244 PI5C162244 PS7024B 48-PIN PI5C162244 PI5C16244	PDF
zener 6c2 Abstract: zener 4c3 zener 5c1 zener 5A6 zener 5A1 zener 2a7 zener 9A1 4C3 zener 4C7 marking code 5a6 zener Text: GLZ2.0 A (B)(D) THRU GLZ56(A)(B)(C) SURFACE MOUNT ZENER DIODES MINI-MELF SOD-80/DO-213AA Planar Die construction 500mV Power Dissipationie construction Ieally Sulted for Automated Assembly Processes 0.146(3.70) 0.130(3.30) 0.063(1.60) 0.055(1.40) 0.020(0.50)	Original	GLZ56 OD-80/DO-213AA 500mV MIL-STD-202E zener 6c2 zener 4c3 zener 5c1 zener 5A6 zener 5A1 zener 2a7 zener 9A1 4C3 zener 4C7 marking code 5a6 zener	PDF
DC1277 Abstract: DC1279F-T DC1276 DC1270 Gunn Diode e band DC1277G-T DC1278F DC1279C DC1279F 018ph diode Text: 37bâ£22 DOlflS'îO TSD « P L S B Si GEC P L E S S E Y S E M I C O N D U C T O R S D S3420-1.2 DC1270/1220 Series MILLIMETRE WAVE GUNN DIODES STANDARD AND GRADED GAP Tha introduction of the DC1270/DC1220 Series extends the range of high power standard and graded-gap GaAs	OCR Scan	S3420-1 DC1270/1220 DC1270/DC1220 37bflS25 100MW DC1276T DC1277 DC1278 DC1279 DC1279F-T DC1276 DC1270 Gunn Diode e band DC1277G-T DC1278F DC1279C DC1279F 018ph diode	PDF

3B3 DIODE Search Results

3B3 DIODE Result Highlights (5)

3B3 DIODE Datasheets Context Search

ML5415N

FIT4 diode

DP07C

2N3425 MOTOROLA

zener 3B2

zener B51

DAM3B10

3b3 zener diode

ECG3100

C16T10Q

A15F

marking v3

3b3 zener diode

5B1 zener diode

smd 5b1

ZENER B18

Untitled

Schottky Diode 40V 2A

u1620

ps817

16244

48-PIN

zener 6c2

DC1277