Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    3AV2A HONEYWELL HALL EFFECT VANE SENSOR MECHANICAL CHARACTERISTICS Search Results

    3AV2A HONEYWELL HALL EFFECT VANE SENSOR MECHANICAL CHARACTERISTICS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    3AV2A HONEYWELL HALL EFFECT VANE SENSOR MECHANICAL CHARACTERISTICS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    hall effect sensor tachometer

    Abstract: MICRO SWITCH 1AV3A hall sensor magnet 4 terminals 1AV3A 1AV2A 3AV2C 1AV Series 3AV1C 4AV12A 4AV11C
    Text: AV Van operated position sensors FEATURES TYPICAL DIMENSIONS . Hall effect sensor • Single digital output. . . current sinking or sourcing » Versatile mounting o 3 pin solder/quick-connect terminals or leadwires • 6 to 24 VDC power supply • Lower operating force


    OCR Scan     		PDF 4AV11C V11C-T1 4AV12C 4AV11A 4AV12A hall effect sensor tachometer MICRO SWITCH 1AV3A hall sensor magnet 4 terminals 1AV3A 1AV2A 3AV2C 1AV Series 3AV1C 4AV12A