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    3SK308 Search Results

    3SK308 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    3SK308 Panasonic Silicon N-Channel MOS for UHF Amplification Scan PDF

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    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 3SK285 High Frequency FETs 3SK304 Tentative , 3SK308(Tentative) Silicon N-Channel MOS 3SK304 For UHF amplification 1.5 –0.3 0.65±0.15 1 3 2 +0.1 0.4 –0.05 1.9±0.2 4 0.95 2.9±0.2 Though low voltage operation, performance is equivalent to the con- 0.95


    Original
    PDF 3SK285 3SK304 3SK308 3SK304 800MHz

    Untitled

    Abstract: No abstract text available
    Text: High Frequency FETs 3SK304 Tentative , 3SK308 (Tentative) Silicon N-Channel MOS FET For UHF amplification 3SK304 • Features ● Achieving the equivalent performance to the conventional products under enhancement mode operation. ● Mini-type/S-mini type package, allowing downsizing of the sets


    Original
    PDF 3SK304 3SK308 800MHz

    3SK304

    Abstract: No abstract text available
    Text: High Frequency FETs 3SK304 Tentative , 3SK308 (Tentative) Silicon N-Channel MOS FET For UHF amplification 3SK304 • Features ● Achieving the equivalent performance to the conventional products under enhancement mode operation. ● Mini-type/S-mini type package, allowing downsizing of the sets


    Original
    PDF 3SK304 3SK308 3SK304

    MN1873287

    Abstract: an6512n 2sk3190 MN171202 mn158413 mn15142 mn187164 mn6740 AN7210 MN15283
    Text: Maintenance and Discontinued Types <Maintenance Types> Maintenance and Discontinued Types This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Discontinued Types>


    Original
    PDF MN101C01C MN15224 MN101C01D MN15226 MN101C027 MN15261 MN101C03A MN101C38A MN15263 MN101C06D MN1873287 an6512n 2sk3190 MN171202 mn158413 mn15142 mn187164 mn6740 AN7210 MN15283

    3sk304

    Abstract: 3SK308 k308
    Text: Panasonic H igh F req u en cy FETs 3SK304 Tentative , 3SK308(Tentative) Silicon N-Channel MOS 3SK304 For UHF amplification Unit : mm • Features • Though low voltage operation, performance is equivalent to the con­ ventional product. Be -EE 3 • Downsizing of sets by mini or S-mini type package, and automatic


    OCR Scan
    PDF 3SK304 3SK308 3SK304 100hA VDS-10V 800MHz k308

    3SK304

    Abstract: 3SK308
    Text: Panasonic H ig h F r e q u e n c y FE T s 3SK304 Tentative , 3SK308(Tentative) Silicon N -Channel MOS 3SK304 For UHF amplification U n it : m m • Features • Though low voltage operation, performance is equivalent to the con­ ventional product. EE -e h


    OCR Scan
    PDF 3SK304 3SK308 3SK304 800MHz

    Untitled

    Abstract: No abstract text available
    Text: Panasonic High Frequency FETs 3SK304 Tentative , 3SK308 (Tentative) Silicon N-Channel MOS FET For UHF a m p lific a tio n 3SK304 • Features 0 Achieving the equivalent performance to the conventional prod­ ucts under enhancement mode operation. • Mini-type/S-mini type package, allowing downsizing of the sets


    OCR Scan
    PDF 3SK304 3SK308 100nA 800MHz