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    3SK296ZQ-TL Price and Stock

    Hitachi Ltd 3SK296ZQ-TL

    N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): .025 A; Transistor Element Material: SILICON; Terminal Form: GULL WING;
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    Vyrian 3SK296ZQ-TL 173
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    3SK296ZQ-TL Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    3SK296ZQ-TL-E Renesas Technology Silicon N-Channel Dual Gate MOS FET Original PDF