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IXYS Corporation IXFL38N100Q2 MOSFET N-CH 1000V 29A ISOPLUS264
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DigiKey	IXFL38N100Q2	Tube			25	1 - 10 - 100 $29.6248 1000 $29.6248 10000 $29.6248	Buy Now
Mouser Electronics	IXFL38N100Q2					1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Corporation IXFB38N100Q2 MOSFET N-CH 1000V 38A PLUS264
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DigiKey	IXFB38N100Q2	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	IXFB38N100Q2					1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Corporation IXFN38N100Q2 MOSFET N-CH 1000V 38A SOT-227
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFN38N100Q2	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	IXFN38N100Q2					1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Integrated Circuits Division IXFN38N100Q2 MOSFET N-CH 1000V 38A SOT-227 / N-Channel 1000 V 38A (Tc) 890W (Tc) Chassis Mount SOT-227B
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Win Source Electronics	IXFN38N100Q2		2,118			1 - 10 $31.2228 100 $31.2228 1000 $31.2228 10000 $31.2228	Buy Now

38N100Q Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
38N100Q Abstract: 98949 Text: Advance Technical Information HiPerFET TM Power MOSFETs IXFB 38N100Q Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 1000 V ID25 = 38 A RDS on = 0.26 Ω trr ≤ 300 ns PLUS 264TM (IXFB) Symbol Test Conditions	Original	PDF	38N100Q 264TM 150ited 728B1 38N100Q 98949
38N100Q2 Abstract: No abstract text available Text: Advance Technical Information HiPerFET TM Power MOSFETs IXFB 38N100Q2 Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr = 1000 V V DSS ID25 = 38 A RDS on = 0.26 Ω trr ≤ 300 ns PLUS 264TM (IXFB) Symbol Test Conditions	Original	PDF	38N100Q2 264TM 728B1 38N100Q2
38N100Q2 Abstract: No abstract text available Text: IXFL 38N100Q2 HiPerFETTM Power MOSFETs IXFL 38N100Q2 VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 1000	Original	PDF	38N100Q2 38N100Q2
Untitled Abstract: No abstract text available Text: Advance Technical Information HiPerFETTM Power MOSFETs IXFB 38N100Q2 VDSS = 1000 V ID25 = 38 A RDS on = 0.26 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr trr ≤ 300 ns PLUS 264TM (IXFB) Symbol Test Conditions	Original	PDF	38N100Q2 264TM 728B1
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	PDF	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2