Untitled
Abstract: No abstract text available
Text: MITSUBISHI MICROCOMPUTERS 3819 Group SINGLE-CHIP 8-BIT MICROCOMPUTER ●D-A converter . 8-bit ✕ 1 channels ●Zero cross detection input . 1 channel ●Fluorescent display function
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PA 0016
Abstract: transistor ka6 automatic transfer switch M38197MA-XXXKP stage dimmer M38198 AN1311 automatic transfer switch circuit diagram PA 0016 diagram
Text: MITSUBISHI MICROCOMPUTERS 3819 Group SINGLE-CHIP 8-BIT MICROCOMPUTER ●D-A converter . 8-bit ✕ 1 channels ●Zero cross detection input . 1 channel ●Fluorescent display function
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fld pcb
Abstract: mitsubishi rom ic M3819 PCA4738F-100A 100P6S-A CLK12 M38198EC-XXXFP
Text: ADVANCED AND EVER ADVANCING MITSUBISHI ELECTRIC MITSUBISHI 8-BIT SINGLE-CHIP MICROCOMPUTER 740 FAMILY / 38000 SERIES 3819 User’s Manual Group MITSUBISHI ELECTRIC keep safety first in your circuit designs ! ● Mitsubishi Electric Corporation puts the maximum effort into making semiconductor
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J24532
H-ED346-A
KI-9503
fld pcb
mitsubishi rom ic M3819
PCA4738F-100A
100P6S-A
CLK12
M38198EC-XXXFP
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automatic change over switch circuit diagram
Abstract: 7 segment dislay pin configuration automatic transfer switch M38197MA-XXXKP M5M27C101 RF remote control circuit diagram r2r ladder modified mitsubishi series 740 software PA 0016 7 segment led 12 Hour Digital Clock Circuit
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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H-ED346-A
KI-9503
automatic change over switch circuit diagram
7 segment dislay pin configuration
automatic transfer switch
M38197MA-XXXKP
M5M27C101
RF remote control circuit diagram
r2r ladder modified
mitsubishi series 740 software
PA 0016
7 segment led 12 Hour Digital Clock Circuit
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100P6S-A
Abstract: CLK12 seg130
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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H-ED346-A
KI-9503
100P6S-A
CLK12
seg130
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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P40/INT0
P42/INT
P43/INT
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transistor ka6
Abstract: B00016 M38197MA-XXXKP
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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Original
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PDF
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PA 0016
Abstract: M38197MA-XXXKP automatic transfer switch
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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transistor ka6
Abstract: transistor de audio fp 1016 PA 0016 automatic transfer switch M38199MF-XXXFP M38198EC-XXXFP
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI MICROCOMPUTERS 3819 Group SINGLE-CHIP 8-B IT CMOS MICROCOMPUTER DESCRIPTION • D -A converter The 3819 group is the 8 -bit microcomputer based on the • Zero cross detection input. 1 channel 740 family core technology.
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16-channel
oo24mD
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ATIC 39 b4
Abstract: D16002 ab digio
Text: M ITSU B ISH I M ICR O CO M P U TER S 3819 Group S IN G L E -C H IP 8 -B IT CM O S M IC R O C O M P U T E R DESCRIPTION The 3819 group is the 8-bit microcomputer based on the 740 family core technology. The 3819 group has a fluorescent display automatic display
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16-channel
100ms
ATIC 39 b4
D16002
ab digio
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CM-501
Abstract: CM501 000E-6 transistor ka6 transistor BL P44 100P6S-A M38197MA-XXXFP FF627 7000 jb1 y bl p57 transistor
Text: M IT S U B IS H I M ICROCOMPUTERS 3819 Group S IN G L E -C H IP 8 -B IT CM O S M IC R O C O M P U T E R DESCRIPTION • • • The 3819 group is the 8-bit microcomputer based on the 740 family core technology. The 3819 group has a fluorescent display automatic display
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16-channel
48jus
P52/SCLK2.
P20-P23,
CM-501
CM501
000E-6
transistor ka6
transistor BL P44
100P6S-A
M38197MA-XXXFP
FF627
7000 jb1 y
bl p57 transistor
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI MICROCOMPUTERS 3819 Group SINGLE-CHIP 8-BIT MICROCOMPUTER DESCRIPTION • D-A c o n v e rte -bit X 1 channels The 3819 group is a 8 -bit m icrocom puter based on the 740 fam ily • Z e r o cross detection in p u t. 1 channel
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16-channel
QQ35540
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2N3819 junction fet
Abstract: transistor 2N3819 2N3O19 2N3819 fet 2n3819 transistor VGD25 200UA 2N3819 VDS1
Text: centrai 2N3 819 *1 Central Semiconductor Corp. central semiconductor Corp. N-CHANNEL SILICON JUNCTION FET JEDEC TO-92 CASE 1 4 5 Adams Avenue Hauppauge, New York 11 7 8 8 DESCRIPTION The CENTRAL SEMICONDUCTOR 2 N 3819 type is a Silicon N-Channel Junction Field
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2N3819
200UA
2N3819 junction fet
transistor 2N3819
2N3O19
2N3819 fet
2n3819 transistor
VGD25
200UA
2N3819
VDS1
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transistor 468
Abstract: 2n3819 2n 3819 3819 transistor transistor a effet de champ 3819
Text: *2 N 3819 F IE L D -E F F E C T T R A N S IS T O R , S IL IC O N . N C H A N N E L TRANSISTOR A EFFET DE CHAMP, SILIC IU M . CANAL N ^P re fe rre d device D isp o sitif recommandé - LF amplification A m plification BF - H F amplification 2 - 20 m A •d s s
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C12ss
O-92-See
CB-97
IY22sI
transistor 468
2n3819
2n 3819
3819 transistor
transistor a effet de champ
3819
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Untitled
Abstract: No abstract text available
Text: 9-97 F2 Small Outline Surface Mount Package Devices N -C H A N N E L SILICON JU N C TIO N FIELD-EFFECT TRANSISTORS Device Type V g S(OFF) >GSS bvgss Min G Max @Vgs (V) Min Max M (V) (V) (MA) (nA) SMP 3369 SMP 3370 SMP 3458 SMP 3459 SMP 3460 -4 0 -4 0 -5 0
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NJ132
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Untitled
Abstract: No abstract text available
Text: M IT S U B IS H I M ICRO CO M PUTERS 3 8 1 9 Group S IN G L E -C H IP 8 -B IT CM O S M IC R O C O M P U T E R . 8 - b it X 1 channel DESCRIPTION • D -A c o n v e rte r The 3 8 1 9 group is th e 8 -b it m icro com puter ba s e d on the
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2N5248
Abstract: BC264C 2N5557 2N5103 2N5485 2n5556 BF244A BF245C 2N5104 BC264A
Text: N -Channel Junction Field Effect Transistors GENERAL PURPOSE M A X IM U M R A T IN G S ' dss Im A l TYPE VG S off (V Y fs (mm hos) Ciss Crss NF (pF) (pF) (dB) max max max CASE NO. Pd (mW) b v gss (V) m in BC264A BC264E! BC264C BC264D TO-92DE TO-92DE TO-92DE
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BC264A
O-92DE
BC264E!
BC264C
BC264D
BF246A
O-92DA
2N5248
2N5557
2N5103
2N5485
2n5556
BF244A
BF245C
2N5104
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for transistor bf 245c
Abstract: BF 145 transistor transistor BF 245A BF 145 2n uhf fet micro to-237 transistor BC 310 transistor BC 321
Text: MICRO EL EC TRO NICS CORP û2 Ì F| bEHlTflfl 00DDb7S 2 N -Channel Junction Field Effect Transistors ~T ~3/-17 G EN ER A L PURPOSE M AXIM UM R A T IN G S 'd s s IraA ) TYPE V G S off) (V ) Y fs (mmhos) Ciss* Crss NF (pF) (pF) (dB) C A SE Pd NO. b v gss (mW)
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00DDb7S
O-92DE
O-92DA
for transistor bf 245c
BF 145 transistor
transistor BF 245A
BF 145
2n uhf fet
micro to-237
transistor BC 310
transistor BC 321
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marking code SE transistors
Abstract: No abstract text available
Text: TELEFUNKEN ELECTRONIC 17E » • fl'ÌEDQRb DQÌHS27 è BUT 56 • BUT 56 A mJMFWKIM electronic Crttttv«Ifcfwioiog* T*- 3 3 -Ì2 Silicon NPN Power Transistors Applications: Switching mode power supply Features: • In multi diffusion technique • Short switching times
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IAL66
DIN41
15A3DIN
marking code SE transistors
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c series transistor equivalent table
Abstract: transistor equivalent table 3819 transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner's Data Sheet M JE16204 SCANSW ITCH™ NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors *Motorota Preferred D «vic* The MJE16204 is a state-of-the-art SWITCHMODE™ bipolar power transistor. It Is
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MJE16204
MJE16204
MJE1S204
c series transistor equivalent table
transistor equivalent table
3819 transistor
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4856a
Abstract: Bc 247b 2SK34 2SK19 30A-GR 2N4393 2SK19-BL 2SK33 BF 246B 2sk to-92
Text: SEMICONDUCTORS INC DTE D | 013bbSD □□□D3G7 S | N-Channel Junction Field Effect Transistors GENERAL PURPOSE MAXIMUM RA TIN G S TYPE NO. C A SE BC BC BC BC 264A 264B 264C 264D BF BF BF BF BF BF 2N 2N 2N 2N 2N Yfs mmhos •d s s (mA Pd (mWI bvg ss (V)
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613bb5D
O-92DE
O-92DA
4856a
Bc 247b
2SK34
2SK19
30A-GR
2N4393
2SK19-BL
2SK33
BF 246B
2sk to-92
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2N5458 equivalent
Abstract: 2N4303 mpf105 equivalent 2N4302 mpf103 2N5457 equivalent MPF102 equivalent transistor 2N4303 equivalent equivalent 2N5459 2N4304 equivalent
Text: Sem iconductors M icro-Electronics F.E.T.'s/P.U.T.'s/Light Detectors General Purpose Junction F.E.T.s REFERENCE T A B L E Code Min. B V qss Volts MEF101 MEF102 MEF103 MEF104 2N4302 2N4303 2N4304. 30 40 40 50 30 30 30 Volts Max. C 1S1 pF Max. 1kHz NF dB 10
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MEF101
19341B
MEF102
31291X
MEF103
19342X
MEF104
19343R
2N4302
31318R
2N5458 equivalent
2N4303
mpf105 equivalent
mpf103
2N5457 equivalent
MPF102 equivalent transistor
2N4303 equivalent
equivalent 2N5459
2N4304 equivalent
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2N2147
Abstract: fet 2n2646 2n2926 2n3055 tos 2N1305 npn 2N2926 2N1304 2n1304 transistor 2N1309 2N1308
Text: 57 T ransistors Continued Notes 1> M inim um value {2 Average value (3> Max. unilateralized power gain (4) Max. frequency o f oscillation {5) W ith heat sink Pto t: Max. total dissipation in free air a t 25°C ambient temp. Vcbo: Max. collector-to-base voltage, em itter
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2N987
100mW
lOOmc121
2N1131
600mW
150mA
2N1132
360mW
120mcf2)
2N2147
fet 2n2646
2n2926
2n3055 tos
2N1305
npn 2N2926
2N1304
2n1304 transistor
2N1309
2N1308
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