3810 TO EQUIVALENT IC Search Results

lt3824

Abstract: 40A 48v charger Schematic Diagram 3810 to equivalent ic LTC3810-5 REG IC 48V IN 12V 2A OUT EA2 SOT23 mathcad 1N4148 pspice M2 MARKING SOT23 LTC3810
Contextual Info: LTC3810 100V Current Mode Synchronous Switching Regulator Controller DESCRIPTION FEATURES n n n n n n n n n n n n n n n n The LTC3810 is a synchronous step-down switching regulator controller that can directly step-down voltages from up to 100V, making it ideal for telecom and automotive applications. The LTC3810 uses a constant on-time

40A 48v charger Schematic Diagram

Abstract: LT3812-5 LTC3810 MBR1100 Si7456DP ZXMN10A07F lt381 REG IC 48V 5V 18V 10A OUT Nippon capacitors
Contextual Info: LTC3810 100V Current Mode Synchronous Switching Regulator Controller DESCRIPTION FEATURES n n n n n n n n n n n n n n n n The LTC3810 is a synchronous step-down switching regulator controller that can directly step-down voltages from up to 100V, making it ideal for telecom and automotive applications. The LTC3810 uses a constant on-time

LT3824

Abstract: Nippon capacitors
Contextual Info: LTC3810 100V Current Mode Synchronous Switching Regulator Controller DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LTC3810 is a synchronous step-down switching regulator controller that can directly step-down voltages

48v dc 40a power supply

Abstract: 16 pin ic 3810 40A 48v charger Schematic Diagram Nippon capacitors
Contextual Info: LTC3810 100V Current Mode Synchronous Switching Regulator Controller DESCRIPTION FEATURES n n n n n n n n n n n n n n n n The LTC3810 is a synchronous step-down switching regulator controller that can directly step-down voltages from up to 100V, making it ideal for telecom and automotive applications. The LTC3810 uses a constant on-time

Contextual Info: LTC3810 100V Current Mode Synchronous Switching Regulator Controller DESCRIPTION FEATURES n n n n n n n n n n n n n n n n The LTC3810 is a synchronous step-down switching regulator controller that can directly step-down voltages from up to 100V, making it ideal for telecom and automotive applications. The LTC3810 uses a constant on-time

Contextual Info: Wljm SMALL SIGNAL RF PIN DIODE CHIPS FOR HYBRID INTEGRATED CIRCUITS HEW LETT PACKARD wLEM HPND-0001 HPND-0002 HPND-0003 T E C H N IC A L DATA M ARCH 1988 Features THERMOCOMPRESSION/THERMOSONICALLY BON DAB LE IDEAL FOR HYBRID INTEGRATED CIRCUITS GOLD METALLIZATION

Contextual Info: W ß%H EW L E T T 1“KM PA CK A R D Small Signal RF PIN Diode Chips for Hybrid Integrated Circuits Technical Data HPND-0001 HPND-0002 Features Description • Thermocompression/ ThermosonicaUy Bondable These PIN/NIP diode chips are specifically designed for hybrid

HPND0003

Abstract: HPND-0003
Contextual Info: W fipi H E W LE T T mL'HM P A C K A R D Small Signal RF PIN Diode Chips for Hybrid Integrated Circuits Technical Data HPND-0001 HPND-0002 HPND-0003 F eatures • Thermocompression/ Thermosonically Bondable • Ideal for Hybrid Integrated Circuits • Gold Metallization

BD676

Abstract: BD682 cross reference BD682 equivalent transistor BD 680 BD676 time failure transistor Bd682
Contextual Info: BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682 Plastic Medium-Power Silicon PNP Darlingtons http://onsemi.com .for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain – • • • hFE = 750 Min @ IC = 1.5 and 2.0 Adc

bd681 9 435

Abstract: BD675 BD675A BD676 BD677 BD677A BD679 BD679A BD68 BD681
Contextual Info: ON Semiconductort BD675 BD675A BD677 BD677A BD679 BD679A BD681* Plastic Medium-Power Silicon NPN Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — • • hFE = 750 Min @ IC

BD675

Abstract: BD676 BD676A BD678 BD678A BD680 BD680A BD682
Contextual Info: BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682 Plastic Medium-Power Silicon PNP Darlingtons http://onsemi.com .for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain – • • • hFE = 750 Min @ IC = 1.5 and 2.0 Adc

BD676

Abstract: BD680 BD675 BD676A BD678 BD678A BD680A BD682
Contextual Info: BD676 BD676A BD678 BD678A BD680 BD680A BD682 Plastic Medium-Power Silicon PNP Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 Min @ IC = 1.5 and 2.0 Adc • Monolithic Construction

TIP35C EQUIVALENT

Abstract: TIP-36A tip36c equivalent TIP35A TIP35C equivalents transistor TIP36C MJE180 TIP35B TIP35C TIP36A
Contextual Info: ON Semiconductort NPN TIP35A Complementary Silicon High-Power Transistors TIP35B * TIP35C * . . . for general–purpose power amplifier and switching applications. PNP • 25 A Collector Current TIP36A • Low Leakage Current — TIP36B * TIP36C * ICEO = 1.0 mA @ 30 and 60 V

TIP35C EQUIVALENT

Abstract: TIP36C EQUIVALENT
Contextual Info: NPN Complementary Silicon High-Power Transistors TIP35A TIP35B * TIP35C * . . . for general–purpose power amplifier and switching applications. PNP • 25 A Collector Current TIP36A • Low Leakage Current — TIP36B * TIP36C * ICEO = 1.0 mA @ 30 and 60 V

MC78FC00

Abstract: MC78FC30HT1 MC78FC33HT1 MC78FC40HT1 MC78FC50HT1 MC78FCXX
Contextual Info: ON Semiconductort MC78FC00 Series Micropower Voltage Regulator The MC78FC00 series voltage regulators are specifically designed for use as a power source for video instruments, handheld communication equipment, and battery powered equipment. The MC78FC00 series voltage regulator ICs feature a high accuracy

Contextual Info: Back ON Semiconductort MC78FC00 Series Micropower Voltage Regulator The MC78FC00 series voltage regulators are specifically designed for use as a power source for video instruments, handheld communication equipment, and battery powered equipment. The MC78FC00 series voltage regulator ICs feature a high accuracy

P2N2222A

Abstract: p2n2222a equivalent 1N914
Contextual Info: ON Semiconductort Amplifier Transistors P2N2222A NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 75 Vdc Emitter–Base Voltage VEBO 6.0 Vdc Collector Current — Continuous IC 600 mAdc

MC78FC00

Abstract: MC78FC30HT1 MC78FC33HT1 MC78FC40HT1 MC78FC50HT1 MC78FCXX
Contextual Info: ON Semiconductort MC78FC00 Series Micropower Voltage Regulator The MC78FC00 series voltage regulators are specifically designed for use as a power source for video instruments, handheld communication equipment, and battery powered equipment. The MC78FC00 series voltage regulator ICs feature a high accuracy

TRANSISTOR 2n5302

Abstract: 2N5302
Contextual Info: ON Semiconductort High-Power NPN Silicon Transistor 2N5302 . . . for use in power amplifier and switching circuits applications. • Low Collector–Emitter Saturation Voltage – 30 AMPERE POWER TRANSISTOR NPN SILICON 60 VOLTS 200 WATTS VCE sat = 0.75 Vdc (Max) @ IC = 10 Adc

Contextual Info: W hp\ H EW LETT PACKARD 1 "fíM IR Secure, Hermetic, Panel Mount Solid State Lamps DESC Approved Technical Data Features 87019G01 Green 87019Y01 Yellow • Choice of Colors 568 nm Green • Designed for IR Secure 585 nm Yellow Lighting Applications Mount Package

2N5883

Abstract: 2n5885
Contextual Info: Complementary Silicon High-Power Transistors PNP 2N5883 2N5884* . . . designed for general–purpose power amplifier and switching applications. NPN 2N5885 2N5886* • Low Collector–Emitter Saturation Voltage — VCE sat = 1.0 Vdc, (max) at IC = 15 Adc

BA241

Abstract: ba241c 30Vc
Contextual Info: NPN BD241C * Complementary Silicon Plastic Power Transistors PNP BD242B BD242C * . . . designed for use in general purpose amplifier and switching applications. • Collector–Emitter Saturation Voltage — *ON Semiconductor Preferred Device VCE = 1.2 Vdc Max @ IC = 3.0 Adc

2N5984

Abstract: 2N5886 2N5883 2N5884 2N5885
Contextual Info: ON Semiconductort PNP Complementary Silicon High-Power Transistors 2N5883 2N5884* . . . designed for general–purpose power amplifier and switching applications. NPN 2N5885 2N5886* • Low Collector–Emitter Saturation Voltage — • • • VCE sat = 1.0 Vdc, (max) at IC = 15 Adc

TIP32C

Abstract: tip318 TIP32C equivalent tip318 transistor TIP32A tip32A application circuit tip31c
Contextual Info: ON Semiconductort NPN TIP31A Complementary Silicon Plastic Power Transistors TIP31B * MJF31C* . . . designed for use in general purpose amplifier and switching applications. PNP TIP31C • Collector–Emitter Saturation Voltage — VCE sat = 1.2 Vdc (Max) @ IC