370 TRANSISTOR Search Results

H-PBGA478

Abstract: PPGA478 processor i7 HPBGA479
Contextual Info: Intel Celeron® M Processor 370 1M Cache, 1.50 GHz, 400 MHz FSB Compare Queue (0) Home Intel® Processors English Send Feedback Intel® Celeron® M Processor Page 1 of 2 Type Here to Search Products Intel® Celeron® M Processor 300 Series 370 Intel® Celeron® M Processor 370

MIPSZ20120D2R2

Contextual Info: User's Guide SLVU312 – June 2009 TPS62230EVM-370 User's Guide This user's guide describes the characteristics, operation, and use of the TPS62230EVM-370 evaluation module EVM . This EVM demonstrates three individual configurations of the Texas Instruments

TRANSISTOR 1300

Abstract: L-Band 1200-1400 MHz RT 6010.5 LM 1214-370M 1200 - 1400 MHz, L-Band Applications
Contextual Info: 1214-370MR4 1214 – 370M . 370 Watts - 50 Volts, 330 µs, 10% Radar 1200 - 1400 MHz GENERAL DESCRIPTION The 1214-370M is an internally matched, COMMON BASE transistor capable of providing 370 Watts of pulsed RF output power at 330 microseconds pulse width, ten percent duty factor across the band 1200 to

Contextual Info: SERIES 215 TRANSISTOR SOCKET INTERCONNECTION SPECIALISTS DIA. .370 [9 .4 0 ] OIA. I .100 [2 .5 4 ] 8 PIN 4 PIN 3 PIN - .230 [5 .8 4 ] OIA. .370 [9 .4 0 ] DIA. _L —r .100 [2 .5 4 ] -75 10 PIN CONTACT TYPE S: STANDARD DIP IN SER TIO N FORCE WITHDRAWAL FORCE

Contextual Info: LM97937 www.ti.com SNVS990A – DECEMBER 2013 – REVISED JANUARY 2014 LM97937 Dual 370 MSPS Receiver and Feedback IC With SNRBoost, Bit-Burst, and JESD204B Outputs Check for Samples: LM97937 FEATURES 1 • • • • • • • • • • Conversion Rate: 370 MSPS

Contextual Info: LM97937 www.ti.com SNVS990A – DECEMBER 2013 – REVISED JANUARY 2014 LM97937 Dual 370 MSPS Receiver and Feedback IC With SNRBoost, Bit-Burst, and JESD204B Outputs Check for Samples: LM97937 FEATURES 1 • • • • • • • • • • Conversion Rate: 370 MSPS

msc diode

Abstract: msc transistor 1214-370V L-Band 1200-1400 MHz 1200 - 1400 MHz, L-Band Applications
Contextual Info: 1214-370V R1 . 1214 – 370V 370 Watts - 50 Volts, 330 µs, 10% Radar 1200 - 1400 MHz GENERAL DESCRIPTION The 1214-370V is an internally matched, COMMON BASE transistor capable of providing 370 Watts of pulsed RF output power at 330 microseconds pulse width, ten percent duty factor across the band 1200 to 1400 MHz. This

0A79 diode

Abstract: IC25N040 LTM12C505 WM3B2100 IC25N080 N020A sandisk SD 512 chip floppy CONNECTOR 16 pin mitsumi camera mitsumi sr244w1
Contextual Info: Acer TravelMate 370 Series Service Guide Service guide files and updates are available on the ACER/CSD web; for more information, please refer to http://csd.acer.com.tw SERVICE CD PART NO.: VD.T39V1.001 PRINTED IN TAIWAN Revision History Please refer to the table below for the updates made on TravelMate 370 service guide.

Contextual Info: J 2 pi r-G (2 p is —• F 1 1 1 h _ L_ _ 1 1 . — _ 1 1 t i —L L DIM MILLIMETER A 9.40 B 6.35 C 9.40 D 20.82 E 14.48 F 6.35 G 0.10 H 2.54 1 1.27 J 3.30 DIA K 3.43 L 2.79 M 1.52 TOL INCHES .61 .370 .18 .250 .61 .370 .25 .820 .13 .570 .13 .250

2N3442

Abstract: high hfe transistor
Contextual Info: TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/370 Devices Qualified Level 2N3442 JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current

TO03

Abstract: 2N3442
Contextual Info: TECHNICAL DATA 2N3442 JAN, JANTX, JANTXV MIL-PRF QPL Processed per MIL-PRF-19500/370 DEVICES NPN HIGH-POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current

Contextual Info: ., Una. TELEPHONE: 973 370-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA 2N404A GERMANIUM TRANSISTOR JEDEC TO - 5 CASE MAXIMUM RATINGS { TA = 25° C ) Collector-Base Voltage V CBO Collector-Emitter Voltage ( Punch - through)

3N187

Contextual Info: <Sunt~ 2oncluctoi ^PiocLcti, 20 STERN AVE. SPRINGFIELD. NEW JERSEY 07081 U.SA TELEPHONE: (973 370-2922 (212)227-6006 FAX: (973) 3704860 3N187 Silicon Dual Insulated-Gate Field-Effect Transistor With Integrated Gate-Protection Circuits For Military and Industrial Applications up to 300 MHz

2SC5548

Abstract: C5548
Contextual Info: 2SC5548 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5548 High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications Unit: mm • High speed switching: tr = 0.5 µs max , tf = 0.3 µs (max) (IC = 0.8 A) · High collector breakdown voltage: VCEO = 370 V

SN75129

Abstract: 1N3064 SN75128
Contextual Info: SN75128, SN75129 EIGHT-CHANNEL LINE RECEIVERS SLLS076A- D2305, JANUARY 1977 - REVISED MARCH 1993 N PACKAGE Meets IBM 360/370 I/O Specification TOP VIEW Input Resistance. . . 7 k£2 to 20 kQ 1S/1 S t [ 1 1A [ 2 Output Compatible With TTL Schottky-Clamped Transistors

BFQ53

Abstract: transistor w7 634 transistor BFQ52 DOMS477
Contextual Info: Product specification Philips Semiconductors 7^3 /-/7 NPN 5 GHz wideband transistor PHILIPS INTERNATIONAL SbE D BFQ53 711002b D O M S 477 370 • PHIN PINNING DESCRIPTION NPN transistor in a TO-72 metal envelope with insulated electrodes and a shield lead connected to the

2SC5548

Abstract: TOSHIBA TV IC regulator
Contextual Info: TOSHIBA 2SC5548 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5548 Unit in mm SWITCHING REGULATOR APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS • • • : tr = 0.5 /us Max. , tf = 0.3 /us (Max.) (IC = 0.8 A) High Collector Breakdown Voltage : V^EO = 370 V

Contextual Info: TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 370 Devices Qualified Level 2N3442 JAN JANTX JANTXV MAXIMUM RATINGS Ratings Symbol Value Units VCEO VCBO VCER VEBO IB IC 140 160 150 7.0 7.0 10 6.0 117 -55 to +200 Vdc Vdc Vdc Vdc

2N3251A

Contextual Info: 580 Pleasant St. Watertown, MA 02172 PH: 617 926-0404 FAX: (617) 924-1235 2N3251A Features • • • • 60 Volts 200 mAmps Meets MIL-S-19500/323 Collector-Base Voltage 60V Collector Current: 200 mA Fast Switching 370 nS PNP BIPOLAR TRANSISTOR Maximum Ratings

2N1925

Contextual Info: m 2N1925 \ \ GERMANIUM PNP TRANSISTOR PACKAGE STYLE T O - 5 DESCRIPTION: The 2N1925 is Designed for General Purpose Amplifier and Switching Applications. .370 I . 305 r . 335 I •260 .009 .125 T 1.50 MIN. J. MAXIMUM RATINGS 500 mA lc -40 V VcER P diss 225 mW @

IBM0364404C

Contextual Info: . IBM0364404C IBM0364164C IBM0364804C IBM03644B4C 64Mb Synchronous DRAM - Die Revision A Features • Programmable Wrap Sequence: Sequential or Interleave • High Performance: • Multiple Burst Read with Single Write Option -360, CL=3 -365, CL=3 -370, CL=3

Contextual Info: •sSemt-CoruLujtot ZPiotbak*, Una. TELEPHONE: 979 370-2992 (2139 227-6008 FAX: (973) 3764060 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA MAXIMUM RATINGS 2N3736 2N3737 2IM3734 Collactor-Emttter Voltage Veep 30 60 Vdc Collactor-Baaa Voltage VCBO VEBO

LQ121S1DG43

Abstract: transistor d799 lcd tv parts 21913A CXA-P1212B-WJL d799 D800 sharp lcd 128 240 DF9-41S-1V DF9A-41S-1V
Contextual Info: Technical Document LCD Specification LCD Group LQ121S1DG43 LCD Module Product Specification September 2009 800 x 600 SVGA LCD Module featuring 370 nits brightness with 450:1 contrast. Full Specifications Listing. RECORDS OF REVISION LQ121S1DG43 SPEC No. LD-21913A

LQ121S1LG42

Contextual Info: Technical Document LCD Specification LCD Group LQ121S1LG42 LCD Module Product Specification July 2008 800 x 600 SVGA LCD Module featuring 370 nits brightness with 450:1 contrast. Full Specifications Listing. RECORDS OF REVISION LQ121S1LG42 SPEC No. LD-20712A