MB811
Abstract: TPC 8608
Text: November 1996 Revision 1.1 DATA SHEET FSA4UN364 2/4 -(60/70)J(G/S)-S 16MByte (4M x 36) CMOS DRAM Module General Description The FSA4UN364(2/4)-(60/70)J(G/S)-S is a high performance, 16-megabyte dynamic RAM module organized as 4M words by 36bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. FSA4UN3644 supports 4K refresh. FSA4UN3642
|
Original
|
FSA4UN364
16MByte
16-megabyte
36bits,
72-pin,
FSA4UN3644
FSA4UN3642
MB811
MB814100C-
TPC 8608
|
PDF
|
MB811
Abstract: No abstract text available
Text: July 1997 Revision 1.0 data sheet FSA4UN364 2/4 B-60J(G/S)-S 16MByte (4M x 36) CMOS DRAM Module General Description The FSA4UN364(2/4)B-60J(G/S)-S is a high performance, 16-megabyte dynamic RAM module organized as 4M words by 36bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. FSA4UN3644B supports 4K refresh. FSA4UN3642B supports 2K refresh.
|
Original
|
FSA4UN364
B-60J
16MByte
16-megabyte
36bits,
72-pin,
FSA4UN3644B
FSA4UN3642B
MB811
|
PDF
|
MB811
Abstract: No abstract text available
Text: June1996 Revision 1.0 DATA SHEET FSA4UN364 2/4 -(60/70)J(G/S)-S 16MByte (4M x 36) CMOS DRAM Module General Description The FSA4UN364(2/4)-(60/70)J(G/S)-S is a high performance, 16-megabyte dynamic RAM module organized as 4M words by 36bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. DM4M4N360 supports 4K refresh. DM4M2N360
|
Original
|
June1996
FSA4UN364
16MByte
16-megabyte
36bits,
72-pin,
DM4M4N360
DM4M2N360
MB811
|
PDF
|
MB8117400B-60PJ
Abstract: No abstract text available
Text: July 1997 Revision 1.0 data sheet FSA8UN3642B-60J G/S -S 32MByte (8M x 36) CMOS DRAM Module General Description The FSA8UN3642B-60J(G/S)-S is a high performance, 32-megabyte dynamic RAM module organized as 8M words by 36bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package.
|
Original
|
FSA8UN3642B-60J
32MByte
32-megabyte
36bits,
72-pin,
MB8117400B-60PJ
MB814100C-60PJ
|
PDF
|
MB811
Abstract: No abstract text available
Text: May1996 Revision 1.0 DATA SHEET DM4M 4/2 N360-(60/70)JG-IS 16MByte (4M x 36) CMOS DRAM Module General Description The DM4M(4/2)N360-(60/70)JG-IS is a high performance, 16-megabyte dynamic RAM module organized as 4M words by 36bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. DM4M4N360 supports 4K refresh. DM4M2N360 supports
|
Original
|
May1996
16MByte
16-megabyte
36bits,
72-pin,
DM4M4N360
DM4M2N360
MB811
MB814100C-
MP-DRAMM-DS-20311-4/96
|
PDF
|
K7Q161852A
Abstract: K7Q161852A-FC10 K7Q161852A-FC13 K7Q161852A-FC16 K7Q163652A K7Q163652A-FC10 K7Q163652A-FC13 K7Q163652A-FC16
Text: K7Q163652A K7Q161852A 512Kx36 & 1Mx18 QDRTM b2 SRAM Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM Revision History History Draft Date Remark 0.0 1. Initial document. April, 30, 2001 Advance 0.1 1. Amendment 1 Page 3,4 PIN NAME DESCRIPTION W 4A) : from Read Control Pin to Write Control
|
Original
|
K7Q163652A
K7Q161852A
512Kx36
1Mx18
512Kx36-bit,
1Mx18-bit
K7Q161852A
K7Q161852A-FC10
K7Q161852A-FC13
K7Q161852A-FC16
K7Q163652A
K7Q163652A-FC10
K7Q163652A-FC13
K7Q163652A-FC16
|
PDF
|
10D-11
Abstract: K7R160982B K7R160982B-FC16 K7R160982B-FC20 K7R161882B K7R161882B-FC16 K7R161882B-FC20 K7R163682B K7R163682B-FC16 K7R163682B-FC20
Text: K7R163682B K7R161882B K7R160982B 512Kx36 & 1Mx18 & 2Mx9 QDR TM II b2 SRAM Document Title 512Kx36-bit, 1Mx18-bit, 2Mx9-bit QDRTM II b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Oct. 17, 2002 Advance 0.1 1. Change the Boundary scan exit order.
|
Original
|
K7R163682B
K7R161882B
K7R160982B
512Kx36
1Mx18
512Kx36-bit,
1Mx18-bit,
10D-11
K7R160982B
K7R160982B-FC16
K7R160982B-FC20
K7R161882B
K7R161882B-FC16
K7R161882B-FC20
K7R163682B
K7R163682B-FC16
K7R163682B-FC20
|
PDF
|
K7Q161864B-FC16
Abstract: D0-35 K7Q161864B K7Q163664B K7Q163664B-FC16
Text: K7Q163664B K7Q161864B 512Kx36 & 1Mx18 QDRTM b4 SRAM Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Jan. 27, 2004 Advance 1.0 1. Final spec release Mar. 18, 2004 Final Rev. No. The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
|
Original
|
K7Q163664B
K7Q161864B
512Kx36
1Mx18
512Kx36-bit,
1Mx18-bit
K7Q161864B-FC16
D0-35
K7Q161864B
K7Q163664B
K7Q163664B-FC16
|
PDF
|
D0-35
Abstract: K7J161882B K7J161882B-FC16 K7J161882B-FC20 K7J161882B-FC25 K7J163682B K7J163682B-FC16 K7J163682B-FC20 K7J163682B-FC25
Text: K7J163682B K7J161882B 512Kx36 & 1Mx18 DDR II SIO b2 SRAM Document Title 512Kx36-bit, 1Mx18-bit DDR II SIO b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Dec. 16, 2002 Advance 0.1 1. Change the JTAG Block diagram Dec. 26, 2002 Preliminary
|
Original
|
K7J163682B
K7J161882B
512Kx36
1Mx18
512Kx36-bit,
1Mx18-bit
165FBGA
D0-35
K7J161882B
K7J161882B-FC16
K7J161882B-FC20
K7J161882B-FC25
K7J163682B
K7J163682B-FC16
K7J163682B-FC20
K7J163682B-FC25
|
PDF
|
TC59LM836DKB
Abstract: TC59LM836DKB-33
Text: TC59LM836DKB-33,-40 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2 − 2,097,152-WORDS x 4 BANKS × 36-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM836DKB is Network
|
Original
|
TC59LM836DKB-33
288Mbits
152-WORDS
36-BITS
TC59LM836DKB
|
PDF
|
CII51001-1
Abstract: CII51002-1 EP2C20 EP2C35 EP2C50 SSTL-18
Text: Section I. Cyclone II Device Family Data Sheet This section provides provides information for board layout designers to successfully layout their boards for Cyclone II devices. It contains the required PCB layout guidelines, device pin tables, and package
|
Original
|
|
PDF
|
70v3319s133
Abstract: 70V3319 A12L IDT70V3319 IDT70V3319S 70V3319S 70V3319PRF
Text: HIGH-SPEED 3.3V 256K x 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE PRELIMINARY IDT70V3319S Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access
|
Original
|
IDT70V3319S
166MHz
133MHz)
166MHz
PK-128)
256-pin
BC-256)
70V3319
70v3319s133
A12L
IDT70V3319
IDT70V3319S
70V3319S
70V3319PRF
|
PDF
|
GE133
Abstract: cdva AT75C AT75C220 AT75C320 GT Plus Oncore "vector instructions" saturation FS Oncore
Text: Features • • • • • • • • • • • Fully Autonomous DSP System 16-bit Fixed-point OakDSPCore 24K x 16 of Uploadable Program RAM 16K x 16 of Data RAM 2K x 16 of X-RAM 2K x 16 of Y-RAM X-RAM and Y-RAM Accessible within the Same Cycle JTAG Interface Available on AT75C220 and AT75C320
|
Original
|
16-bit
AT75C220
AT75C320
AT75C
16-bit,
1368B
GE133
cdva
AT75C320
GT Plus Oncore
"vector instructions" saturation
FS Oncore
|
PDF
|
Untitled
Abstract: No abstract text available
Text: cP ÏITSIJ I A M. July 1997 Revision 1.0 data sheet FSA4UN364 2/4 B-60J(G/S)-S 16MByte (4M x 36) CMOS DRAM Module General Description The FSA4UN364(2/4)B-60J(G/S)-S is a high performance, 16-megabyte dynamic RAM module organized as 4M words by 36bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. FSA4UN3644B supports 4K refresh. FSA4UN3642B sup
|
OCR Scan
|
FSA4UN364
B-60J
16MByte
16-megabyte
36bits,
72-pin,
FSA4UN3644B
FSA4UN3642B
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: November 1996 Revision 1.1 FUJITSU DATA SHEET FSA4UN364 2/4 -(60/70)J(G/S)-S 16MByte (4M x 36) CMOS DRAM Module General Description The FSA4UN364(2/4)-(60/70)J(G/S)-S is a high performance, 16-megabyte dynamic RAM module organized as 4M words by 36bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. FSA4UN3644 supports 4K refresh. FSA4UN3642
|
OCR Scan
|
FSA4UN364
16MByte
16-megabyte
36bits,
72-pin,
FSA4UN3644
FSA4UN3642
MB814100C-
72-pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: cP IITSU July 1997 Revision 1.0 data sheet FSA8UN3642B-60J G/S -S 32MByte (8M x 36) CMOS DRAM Module General Description The FSA8UN3642B-60J(G/S)-S is a high performance, 32-megabyte dynamic RAM module organized as 8M words by 36bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package.
|
OCR Scan
|
FSA8UN3642B-60J
32MByte
32-megabyte
36bits,
72-pin,
MB8117400B-60PJ
MB814100C-60PJ
72-pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: June1996 Revision 1.0 FUJITSU DATA S H E E T FSA4UN364 2/4 -(60/70)J(G/S)-S 16MByte (4M x 36) CMOS DRAM Module General Description The FSA4UN364(2/4)-(60/70)J(G/S)-S is a high performance, 16-megabyte dynamic RAM module organized as 4M words by 36bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. DM4M4N360 supports 4K refresh. DM4M2N360
|
OCR Scan
|
June1996
FSA4UN364
16MByte
16-megabyte
36bits,
72-pin,
DM4M4N360
DM4M2N360
MB811
|
PDF
|
5 PEN PC TECHNOLOGY apllications
Abstract: No abstract text available
Text: DATA SHEET PM PMC-970113 ISSUE 3 PMC-Sierra, Inc. PM3351 e l a n 1x100 SINGLE PORT FAST ETHERNET SWITCH PM3351 ELAN 1X100 SINGLE PORT FAST ETHERNET SWITCH DATA SHEET ISSUE 3: FEBRUARY 1998 PROPRIETARY AND CONFIDENTIAL TO PMC-SIERRA, INC., AND FOR ITS CUSTOMERS’ INTERNAL USE
|
OCR Scan
|
PMC-970113
PM3351
1x100
PM3351
5 PEN PC TECHNOLOGY apllications
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CMOS Clocked FIFO With Bus Matching and Byte Swapping IDT723613 64x36 Integrated Device Technology, Inc. FEATURES: • Free-running CLKA and CLKB may be asynchronous or coincident permits simultaneous reading and writing of data on a single clock edge • 64 x 36 storage capacity FIFO buffering data from Port A
|
OCR Scan
|
IDT723613
64x36
36-bits
18-bits
00S742b
IDT723613
PN120-1)
PQ132-1)
3145drw21
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CMOS SyncBiFlFO WITH BUS MATCHING AND BYTE SWAPPING 64 x 36 x 2 IDT723614 Integrated Device Technology, Inc. FEATURES: • Free-running CLKA and CLKB can be asynchronous or coincident simultaneous reading and writing of data on a single clock edge is permitted
|
OCR Scan
|
IDT723614
36-bits
18-bits
|
PDF
|
Untitled
Abstract: No abstract text available
Text: •$:»£ V HIGH-SPEED 3.3V 32K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT70V3379S F ea tu re s: * * True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed clock to data access - * * * * Com m ercial: 5/6ns max.
|
OCR Scan
|
IDT70V3379S
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Integrated Device Technology, Inc. CMOS Sync BiFlFO With Bus-Matching 256x36x2, 512x36x2, 1,024x36x2 PRELIMINARY IDT723624 IDT723634 IDT723644 NOTE: There is an errata notice on the last page and the corrections have not been incorporated into this document.
|
OCR Scan
|
256x36x2,
512x36x2,
024x36x2
IDT723624
IDT723634
IDT723644
2S771
|
PDF
|
Untitled
Abstract: No abstract text available
Text: I l i l l l 1 IF V 1 F 1 1 U 1 ‘! S y P r • W 0 L HIGH-SPEED 3.3V 32K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT70V3379S F ea tu re s: ♦ True Dual-Ported memory cells which allow simultaneous access o f the same memory location ♦ High-speed clock to data access
|
OCR Scan
|
IDT70V3379S
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Integrated Device TechnoJogy, lie. PRELIMINARY IDT723624 IDT723634 IDT723644 CMOS Sync BiFlFO With Bus-Matching 256 x 36 x 2, 512 x 36 x 2, 1024x36x2 NOTE: There is an errata notice on the last page and the corrections have not been incorporated into this document.
|
OCR Scan
|
IDT723624
IDT723634
IDT723644
1024x36x2
|
PDF
|