36P0K Search Results

Contextual Info: 36P0K Plastic 36pin 400mil SOJ EIAJ Package Code SOJ36-P-400-1.27 JEDEC Code – Weight g Lead Material Alloy 42 b2 I1 I2 e D 36 e1 c 19 e1 HE E Recommended Mount Pad Symbol 1 18 L A A1 b1 e y b SEATING PLANE A A1 b b1 c D E e e1 HE L y b2 I1 I2 Dimension in Millimeters

PRSJ0036DA-A

Abstract: EE-119
Contextual Info: JEITA Package Code P-SOJ36-10.16x23.39-1.27 RENESAS Code PRSJ0036DA-A *1 Previous Code 36P0K MASS[Typ.] 1.4g D c HE *2 E e1 19 36 1 NOTE 1. DIMENSIONS "*1" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. 18 Index mark L

36pin

Contextual Info: e y b 18 1 b1 Weight g 19 D JEDEC Code – 36 EIAJ Package Code SOJ36-P-400-1.27 Lead Material Alloy 42 SEATING PLANE HE 36P0K A E A1 L c b2 A A1 b b1 c D E e e1 HE L y b2 I1 I2 Symbol Mar.’98 Dimension in Millimeters Min Nom Max 3.55 3.35 3.45 0.8 –

Contextual Info: MITSUBISHI LSIs 2001.5.17 Ver.F Notice: This is not a final specification. Some parametric limits are subject to change M5M54R08AJ,TP-10,-12 4194304-BIT 524288-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M5M54R08A is a family of 524288-word by 8-bit

MITSUBISHI GATE ARRAY

Abstract: M5M54R08AJ-12
Contextual Info: MITSUBISHI LSIs 2000.6.22 Ver.E M5M54R08AJ-12 Notice: This is not a final specification. Some parametric limits are subject to change 4194304-BIT 524288-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M5M54R08AJ is a family of 524288-word by 8-bit

M5M5V2132GP7

Abstract: MH2568BBN MH2568BBNA M5M51008BVP
Contextual Info: Memory capacity Memory Configuration Access/ Clock ne Functionmode 5.0/7.S 5.0/8.5 5.5/10.0 7.0/13.3 8,0/15.0 12 15 20 12 15 20 12 15 20 Vcc= 3.13 to 3.47V 2M Sync. Burst Pipeline 64Kx32 V c c — 3 .1 3 to 3.8V Sync. Burst Pipeline 4Mx1 4M Vcc= 3.13 to 3.6V

PRQP0080GB-A

Abstract: IC 404 100p6s 80p6n 44P0K PRSJ0036DA-A PRSJ0044DA-A PLQP0144KA-A CP68
Contextual Info: Standard Orientation of Package The pin 1 is located in the hatching portion. Reel off direction The pin 1 may also be located in the following portion for reverse bent packages and some QFPs. Reel off direction ReelType TYPE A TYPE B 44-mm width emboss taping

432W6

Abstract: 48P4B hssop 44P3W-R 28P0 5P5T tsop 2-54 42P9R 70P3S-M 479F7G
Contextual Info: MITSUBISHI INTEGRATED CIRCUIT PACKAGES LIST OF PACKAGE CODES CLASSIFIED ACCORDING TO PIN NUMBER 1. LIST OF PACKAGE CODES CLASSIFIED ACCORIDING TO PIN NUMBER Pin Count Structure Type Lead Pitch mm 5 P P P P P P C C P P P C P P P P P P P P C P P P P P P P

R1RP0408DGE-2PR

Abstract: R1RP0408D R1RP0408DGE-2LR
Contextual Info: R1RP0408D Series 4M High Speed SRAM 512-kword x 8-bit REJ03C0112-0100Z Rev. 1.00 Mar.12.2004 Description The R1RP0408D Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit

R1RW0408D

Abstract: R1RW0408DGE-2LR R1RW0408DGE-2PR
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

R1RP0408D

Abstract: R1RP0408DGE-2LR R1RP0408DGE-2PR
Contextual Info: R1RP0408D Series 4M High Speed SRAM 512-kword x 8-bit REJ03C0112-0200 Rev. 2.00 Dec.1.2008 Description The R1RP0408D Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit

Contextual Info: MITSUBISHI LSIs M5M5V4R08J-12,-15,-20 P R E L IM IN A R Y 1997 02 0 6 Notice: This is not a final specification. Some parametric limits are subject to change R ev D 4194304-BIT 524288-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M5V4R08J is a family of 524288-word by 8-bit static

Contextual Info: MITSUBISHI LSIs 1998.11.30 Ver.B Q D Â M5M54R04AJ-10,-12,-15 0 V N o tic e : T h is is n o t a fin a l s p e c ific a tio n . 4194304-BIT 1048576-WORD BY 4-BIT) CMOS STATIC RAM S o m e p a r a m e tr ic lim its a r e s u b je c t to c h a n g e DESCRIPTION

MITSUBISHI GATE ARRAY

Contextual Info: MITSUBISHI LSIs 2002.10.15 Ver.G Notice: This is not a final specification. Some parametric limits are subject to change M5M54R08AJ,TP-10,-12 4194304-BIT 524288-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M5M54R08A is a family of 524288-word by 8-bit

524,288 x 8bit

Abstract: M5M54R08J-12 M5M54R08J-15 524288-WORD
Contextual Info: MITSUBISHI LSIs M5M54R08J-12,-15 1997.11.20 Rev.F 4194304-BIT 524288-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M54R08J is a family of 524288-word by 8-bit static PIN CONFIGURATION (TOP VIEW) RAMs, fabricated with the high performance CMOS silicon gate

M5M5V4R08J-12

Abstract: M5M5V4R08J-15
Contextual Info: MITSUBISHI LSIs M5M5V4R08J-12,-15 1997.11.20 Rev.F 4194304-BIT 524288-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M5V4R08J is a family of 524288-word by 8-bit static PIN CONFIGURATION (TOP VIEW) RAMs, fabricated with the high performance CMOS silicon gate

R1RP0408DGE-2PI

Abstract: R1RP0408DI
Contextual Info: R1RP0408DI Series Wide Temperature Range Version 4M High Speed SRAM 512-kword x 8-bit REJ03C0114-0100Z Rev. 1.00 Mar.12.2004 Description The R1RP0408DI Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit

R1RW0408D

Abstract: R1RW0408DGE-2LR R1RW0408DGE-2PR
Contextual Info: R1RW0408D Series 4M High Speed SRAM 512-kword x 8-bit REJ03C0111-0200 Rev. 2.00 Dec.1.2008 Description The R1RW0408D is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit

Contextual Info: MITSUBISHI LSIs M 5M 5V 4R 08J-12,-15 1997.11.20 Rev.F 4194304-BIT 524288-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M5V4R08J is a family of 524288-word by 8-bit static PIN CONFIGURATION (TOP VIEW) RAMs, fabricated with the high performance CMOS silicon gate

R1RW0408DGE-2PI

Abstract: R1RW0408DI
Contextual Info: R1RW0408DI Series Wide Temperature Range Version 4M High Speed SRAM 512-kword x 8-bit REJ03C0113-0100Z Rev. 1.00 Mar.12.2004 Description The R1RW0408DI is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit

Contextual Info: MITSUBISHI LSIs 1996.6.11 MÇM5V4R08 J-10,-12,-15 PRELIM I N A R Y Notice: This is not a final specification. Some parametric limits are subject to change 4194304-BIT 524288-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M5V4R0SJ is a family o f 524288-word by 8-bit static

524,288 x 8 bit

Abstract: M5M54R08AJ-10 M5M54R08AJ-12 M5M54R08AJ-15 524,288
Contextual Info: MITSUBISHI LSIs 1998.11.30 Ver.B M5M54R08AJ-10,-12,-15 PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change 4194304-BIT 524288-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M5M54R08AJ is a family of 524288-word by 8-bit

R1RW0408D

Abstract: R1RW0408DGE-2LR R1RW0408DGE-2PR
Contextual Info: R1RW0408D Series 4M High Speed SRAM 512-kword x 8-bit REJ03C0111-0100Z Rev. 1.00 Mar.12.2004 Description The R1RW0408D is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit

R1RP0408DGE-2PI

Abstract: R1RP0408DI
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid