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    Comchip Technology Corporation Ltd CDBA360-HF

    DIODE SCHOTTKY 60V 3A DO214AC
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    DigiKey CDBA360-HF Cut Tape 174,594 1
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    CDBA360-HF Digi-Reel 174,594 1
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    CDBA360-HF Reel 170,000 5,000
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    Mouser Electronics CDBA360-HF 10,686
    • 1 $0.39
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    Karl Kruse GmbH & Co KG CDBA360-HF 70,000
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    NAC CDBA360-HF 43,550 1
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    Chip 1 Exchange CDBA360-HF 35,000
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    Comchip Technology Corporation Ltd CDBB360-HF

    DIODE SCHOTTKY 60V 3A DO214AA
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    DigiKey CDBB360-HF Cut Tape 62,882 1
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    CDBB360-HF Digi-Reel 62,882 1
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    CDBB360-HF Reel 6,000 3,000
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    Mouser Electronics CDBB360-HF 371
    • 1 $0.51
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    Bristol Electronics CDBB360-HF 318
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    Karl Kruse GmbH & Co KG CDBB360-HF 156,000
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    NAC CDBB360-HF 135,000 1
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    Chip 1 Exchange CDBB360-HF 135,000
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    Comchip Technology Corporation Ltd ATV02W360-HF

    TVS DIODE 36VWM 58.1VC SOD123
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    DigiKey ATV02W360-HF Digi-Reel 11,325 1
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    ATV02W360-HF Cut Tape 11,325 1
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    ATV02W360-HF Reel 9,000 3,000
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    Mouser Electronics ATV02W360-HF 14,673
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    Comchip Technology Corporation Ltd ACDBCT360-HF

    DIODE SCHOTTKY 60V 3A 3220
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    DigiKey ACDBCT360-HF Cut Tape 1,492 1
    • 1 $0.92
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    • 1000 $0.30933
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    ACDBCT360-HF Digi-Reel 1,492 1
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    NAC ACDBCT360-HF 3,000
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    Intel Corporation EP4SGX360HF35C4

    IC FPGA 564 I/O 1152FBGA
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    DigiKey EP4SGX360HF35C4 Tray
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    360HF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor GT 1081

    Abstract: MRFG35010AR5
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010A Rev. 0, 5/2006 Gallium Arsenide PHEMT MRFG35010AR1 MRFG35010AR5 RF Power Field Effect Transistor Designed for WiMAX, WLL/MMDS or UMTS driver and final applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for


    Original     		PDF MRFG35010A MRFG35010AR1 MRFG35010AR5 MRFG35010A transistor GT 1081 MRFG35010AR5

    DIODE 709 1334

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRFG35010/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35010 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or


    Original     		PDF MRFG35010/D MRFG35010 MRFG35010 MRFG35010/D DIODE 709 1334

    3224W-1-502E

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRFG35010/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35010 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or


    Original     		PDF MRFG35010/D MRFG35010 MRFG35010 3224W-1-502E

    IRL 724 N

    Abstract: MRFG35010 MRFG35010AR1 MRFG35010R1 MTP23P06V RO4350 motorola diode marking 0103
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010 Rev. 9, 1/2008 MRFG35010R1 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from 1800 to 3600 MHz. Device is unmatched and is suitable for use in Class AB or


    Original     		PDF MRFG35010 MRFG35010R1 IRL 724 N MRFG35010 MRFG35010AR1 MRFG35010R1 MTP23P06V RO4350 motorola diode marking 0103

    INF 740

    Abstract: Motorola 581 c 1685 transistor 3224W-1-502E 901 704 16 08 55 DIODE Z1 04 833 motorola IRL 724 N Marking Z7 Gate Driver MRFG35010R1 MRFG35010
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010 Rev. 9, 1/2008 MRFG35010R1 replaced by MRFG35010AR1. MRFG35010R1 Gallium Arsenide PHEMT RF Power Field Effect Transistor 3.5 GHz, 10 W, 12 V POWER FET GaAs PHEMT • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts,


    Original     		PDF MRFG35010 MRFG35010R1 MRFG35010AR1. MRFG35010R1 360HF INF 740 Motorola 581 c 1685 transistor 3224W-1-502E 901 704 16 08 55 DIODE Z1 04 833 motorola IRL 724 N Marking Z7 Gate Driver MRFG35010

    Untitled

    Abstract: No abstract text available
    Text: SMD Schottky Barrier Rectifiers CDBC320-HF Thru. CDBC3100-HF Reverse Voltage: 20 to 100 Volts Forward Current: 3.0 Amp RoHS Device Halogen Free DO-214AB SMC Features -Low Profile surface mount applications in order to optimize board space. -Low power loss, high efficiency.


    Original     		PDF CDBC320-HF CDBC3100-HF DO-214AB UL94-V0 DO-214AB 00-HF CDBC340-HF CDBC360-HF

    stripline directional couplers

    Abstract: MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1
    Text: RF and IF Quarter 3, 2005 SG1009Q32005 Rev 0 What’s New! Market Product GSM/GPRS Cellular MMM6025 Cellular, GPS, ISM MC13820 TV Broadcast MRF377HR3, MRF377HR5 900 MHz Cellular Base Station MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, MRF6S9125NBR1, MRF6S9130HR3, MRF6S9130HSR3,


    Original     		PDF SG1009Q32005 MMM6025 MC13820 MRF377HR3, MRF377HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, stripline directional couplers MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1

    TRANSISTOR REPLACEMENT GUIDE

    Abstract: FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor
    Text: Quarter 4, 2004 SG1009Q42004 Rev 0 What’s New! Market Product 900 MHz Cellular Base Station MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, MRF9200LR3, MRF9200LSR3 CDMA 1.9 GHz Cellular Base Station


    Original     		PDF SG1009Q42004 MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, TRANSISTOR REPLACEMENT GUIDE FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor

    2a258 transistor

    Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index
    Text: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii


    Original     		PDF DL110/D 2a258 transistor Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index

    D 4206 TRANSISTOR

    Abstract: 7402 motorola DIODE MOTOROLA 633 motorola 549 diode Motorola 581 MA8051CT-ND 3-063 motorola 731 motorola 901 704 16 08 55 transistor motorola 236
    Text: MOTOROLA Order this document by MRFG35010/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35010 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or


    Original     		PDF MRFG35010/D MRFG35010 D 4206 TRANSISTOR 7402 motorola DIODE MOTOROLA 633 motorola 549 diode Motorola 581 MA8051CT-ND 3-063 motorola 731 motorola 901 704 16 08 55 transistor motorola 236

    L 3055 motorola

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRFG35010/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35010 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or


    Original     		PDF MRFG35010/D MRFG35010 MRFG35010 L 3055 motorola

    100A101JW150XT

    Abstract: transistor GT 1081 transistor 0882 N 341 AB ZO 607 MA MRFG35010AR1 A114 A115 AN1955 C101
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010A Rev. 2, 12/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010AR1 Designed for WiMAX, WLL/MMDS or UMTS driver and final applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for


    Original     		PDF MRFG35010A MRFG35010AR1 100A101JW150XT transistor GT 1081 transistor 0882 N 341 AB ZO 607 MA MRFG35010AR1 A114 A115 AN1955 C101

    Untitled

    Abstract: No abstract text available
    Text: SMD Schottky Barrier Rectifiers CDBA320-HF Thru. CDBA3100-HF Reverse Voltage: 20 to 100 Volts Forward Current: 3.0 Amp RoHS Device Halogen Free Features DO-214AC SMA -Ideal for surface mount applications. -Easy pick and place. 0.180(4.57) 0.160(4.06) -Plastic package has Underwriters Lab.


    Original     		PDF CDBA320-HF CDBA3100-HF DO-214AC DO-214AC, MIL-STD-750, QW-JB006 CDBA320-HF CDBA340-HF CDBA360-HF CDBA380-HF

    Untitled

    Abstract: No abstract text available
    Text: SMD Schottky Barrier Rectifiers CDBB320-HF Thru. CDBB3100-HF Reverse Voltage: 20 to 100 Volts Forward Current: 3.0 Amp RoHS Device Halogen Free DO-214AA SMB Features -Low Profile surface mount applications in order to optimize board space. 0.087 (2.20) 0.075 (1.90)


    Original     		PDF CDBB320-HF CDBB3100-HF DO-214AA UL94-V0 QW-JB024 CDBB320-HF CDBB340-HF CDBB360-HF SK310

    NI-360HF

    Abstract: MRFG35010 MTP23P06V RO4350 DIODE Z5
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRFG35010/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35010 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from


    Original     		PDF MRFG35010/D MRFG35010 NI-360HF MRFG35010 MTP23P06V RO4350 DIODE Z5

    Untitled

    Abstract: No abstract text available
    Text: SMD Schottky Barrier Rectifiers CDBA320-HF Thru. CDBA3100-HF Reverse Voltage: 20 to 100 Volts Forward Current: 3.0 Amp RoHS Device Halogen Free Features DO-214AC SMA -Ideal for surface mount applications. -Easy pick and place. 0.180(4.57) 0.160(4.06) -Plastic package has Underwriters Lab.


    Original     		PDF CDBA320-HF CDBA3100-HF DO-214AC DO-214AC, MIL-STD-750, cat02 QW-JB006 CDBA320-HF CDBA340-HF CDBA360-HF

    Untitled

    Abstract: No abstract text available
    Text: SMD Schottky Barrier Rectifiers CDBB320-HF Thru. CDBB3100-HF Reverse Voltage: 20 to 100 Volts Forward Current: 3.0 Amp RoHS Device Halogen Free DO-214AA SMB Features -Low Profile surface mount applications in order to optimize board space. 0.087 (2.20) 0.075 (1.90)


    Original     		PDF CDBB320-HF CDBB3100-HF DO-214AA UL94-V0 QW-JB024 CDBB320-HF CDBB340-HF CDBB360-HF SK310

    Untitled

    Abstract: No abstract text available
    Text: SMD Schottky Barrier Rectifiers CDBMH320-HF Thru. CDBMH3100-HF Reverse Voltage: 20 to 100 Volts Forward Current: 3.0 Amp RoHS Device Halogen Free SOD-123T 0.154 3.90 0.138(3.50) Features -Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.


    Original     		PDF CDBMH320-HF CDBMH3100-HF OD-123T MIL-STD-19500/228 CDBMH320-HF CDBMH330-HF CDBMH340-HF CDBMH350-HF CDBMH360-HF CDBMH380-HF

    Untitled

    Abstract: No abstract text available
    Text: SMD Schottky Barrier Rectifiers CDBC320-HF Thru. CDBC3100-HF Reverse Voltage: 20 to 100 Volts Forward Current: 3.0 Amp RoHS Device Halogen Free DO-214AB SMC Features -Low Profile surface mount applications in order to optimize board space. -Low power loss, high efficiency.


    Original     		PDF CDBC320-HF CDBC3100-HF DO-214AB UL94-V0 DO-214AB CDBC340-HF CDBC360-HF

    smd diode H3

    Abstract: smd diode marking BM SMD CODE H3 CDBMH3100-HF marking CODE 32 CDBMH360-HF HCD80 330HF
    Text: SMD Schottky Barrier Rectifiers SMD Diodes Specialist CDBMH320-HF Thru. CDBMH3100-HF Reverse Voltage: 20 to 100 Volts Forward Current: 3.0 Amp RoHS Device Halogen Free SOD-123T 0.154 3.9 0.138(3.5) Features -Batch process design, excellent power dissipation offers


    Original     		PDF CDBMH320-HF CDBMH3100-HF MIL-STD-19500/228 OD-123T CDBMH330-HF CDBMH340-HF CDBMH350-HF CDBMH360-HF CDBMH380-HF smd diode H3 smd diode marking BM SMD CODE H3 CDBMH3100-HF marking CODE 32 HCD80 330HF

    MMM6029

    Abstract: NONLINEAR MODEL LDMOS MMM6007 baseband DigRF semiconductor cross index MRF5S9080NB MW6S010 MMM6000 MMH3101NT1 MRF648 applications
    Text: ZigBee Transceivers RF Cellular Subsystems Low Power RF Components RF Transistors RF Amplifier ICs and Modules RF General Purpose Amplifiers CATV Distribution Amplifier Modules Quarter 4, 2005 SG1009Q42005 Rev 0 What’s New! Market Product GSM/GPRS Cellular


    Original     		PDF SG1009Q42005 MMM6025, MMM6035 MC13820 MRF6P3300HR3, MRF6P3300HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MMM6029 NONLINEAR MODEL LDMOS MMM6007 baseband DigRF semiconductor cross index MRF5S9080NB MW6S010 MMM6000 MMH3101NT1 MRF648 applications

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010A Rev. 2, 12/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010AR1 Designed for WiMAX, WLL/MMDS or UMTS driver and final applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for


    Original     		PDF MRFG35010A MRFG35010AR1

    POT 5K

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010 Rev. 7, 5/2006 Gallium Arsenide PHEMT MRFG35010R1 MRFG35010R5 RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from 1800 to 3600 MHz. Device is unmatched and is suitable for use in Class AB or


    Original     		PDF MRFG35010 MRFG35010R1 MRFG35010R5 MRFG35010 POT 5K

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRFG35010 Rev. 6, 12/2004 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010 Designed for WLL/MMDS or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or


    Original     		PDF MRFG35010 MRFG35010 360D-02, NI-360HF