Untitled
Abstract: No abstract text available
Text: Bulletin PD-20013 rev. C 05/05 IRUD360CW40 FRED Ultrafast, Soft Recovery Diode Features • Very Low Qrr and trr • Lead-Free LUG TERMINAL ANODE 1 LUG TERMINAL ANODE 2 VR = 400V IF AV = 360A Qrr (typ.) = 1250nC Benefits • Reduced RFI and EMI • Higher Frequency Operation
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PD-20013
IRUD360CW40
1250nC
12-Mar-07
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D360SC6M
Abstract: No abstract text available
Text: SHINDENGEN Schottky Rectifiers SBD D360SC6M Modules OUTLINE DIMENSIONS Unit : mm 60V 360A FEATURES High capacity modules Low VF Small jc APPLICATION Big switching power supply DC/DC converter Mainframe IC tester RATINGS Absolute Maximum Ratings@(If not specified Tc=25j
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D360SC6M
100ms,
D360SC6M
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PDF
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360N10T
Abstract: PLUS-247 IXFK360N10T IXFX360N10T PLUS247
Text: Advance Technical Information IXFK360N10T IXFX360N10T GigaMOSTM Trench HiperFETTM Power MOSFET VDSS ID25 = = 100V 360A Ω 2.9mΩ 130ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions
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IXFK360N10T
IXFX360N10T
130ns
O-264
360N10T
PLUS-247
IXFK360N10T
IXFX360N10T
PLUS247
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PDF
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D360SC4M
Abstract: No abstract text available
Text: SHINDENGEN Schottky Rectifiers SBD D360SC4M Modules OUTLINE DIMENSIONS Unit : mm 40V 360A FEATURES High capacity modules Low VF Small jc APPLICATION Big switching power supply DC/DC converter Mainframe IC tester RATINGS Absolute Maximum Ratings@(If not specified Tc=25j
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D360SC4M
100ms,
D360SC4M
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PDF
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360N10T
Abstract: ixfn360n10 IXFN360N10T ac motor 360n10 IXFN 360
Text: Preliminary Technical Information IXFN360N10T TrenchGate Power MOSFET HiperFETTM VDSS ID25 = = ≤ RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier 100V 360A Ω 2.6mΩ miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings
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IXFN360N10T
OT-227
E153432
360N10T
ixfn360n10
IXFN360N10T
ac motor
360n10
IXFN 360
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IXGP90N33TBM-A
Abstract: IXGP90N33 90n33 IXGP90N
Text: IXGP90N33TBM-A Trench gate IGBT For PDP Applications VCES = 330V = 360A ICP VCE sat ≤ 1.60V OVERMOLDED TO-220 W/ FORMED LEAD (IXGP.M-A) Symbol Test Conditions VCES TJ = 25°C to 150°C 330 V VGEM Transient ±30 V IC25 TC = 25°C ICP TJ ≤ 150°C, tp ≤ 1 s
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IXGP90N33TBM-A
O-220
90N33TB
5-27-08-B
IXGP90N33TBM-A
IXGP90N33
90n33
IXGP90N
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information TrenchT2TM Power MOSFET VDSS ID25 IXTH360N055T2 IXTT360N055T2 RDS on = 55V = 360A Ω ≤ 2.4mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C
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IXTH360N055T2
IXTT360N055T2
O-247
360N055T2
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Untitled
Abstract: No abstract text available
Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules TDB6HK180N16RR EconoPACK 2Modul EconoPACK™2module VorläufigeDaten/PreliminaryData VCES = 1200V IC nom = 180A / ICRM = 360A TypischeAnwendungen • AktiverGleichrichter • HalbgesteuerteB6-Brücke
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TDB6HK180N16RR
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PDF
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Untitled
Abstract: No abstract text available
Text: 360A.doc version 1.6 12.04.2001 VI TELEFILTER Filter Specification TFS 360A 1/5
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tfs360A
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PDF
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A502
Abstract: A508 HD6417751 SH7751 Hitachi DSA00207
Text: HITACHI MICROCOMPUTER TECHNICAL UPDATE DATE 28 September 2001 THEME BREQ from external device and refresh of DRAM/synchronous DRAM CLASSIFICATION Spec change Supplement of Documents PRODUCTNAME HD6417751 REFERENCE DOCUMENTS SH7751 Hardware Manual 1. No. TN-SH7-360A/E
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HD6417751
SH7751
TN-SH7-360A/E
A502
A508
HD6417751
Hitachi DSA00207
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PDF
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Untitled
Abstract: No abstract text available
Text: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Tiva TM4C1237H6PGE Microcontroller identical to LM4F132H5QD D ATA SHE E T D S -T M 4C 1237 H6 P G E - 1 4 9 9 5 . 2 6 6 7 S P M S 360A C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright
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TM4C1237H6PGE
LM4F132H5QD)
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PDF
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E62806
Abstract: No abstract text available
Text: Product Data Sheet 145X583 Replace “X” with 1, 2 or 3 for number of poles Power Stud Block 360 Amps, 600 Volts AC/DC Wire Range: Line side: (1) 3/8 - 16 X 1 7/16 stud Load Side: (2) 1/4 - 20 X 1 7/16 stud Electrical Ratings: • 360A copper wire • 600 Volts AC/DC (UL 1059 Class C, User Group - General Industrial)
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145X583
Ins1059
E62806
LR19766
CC145X
E62806
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PDF
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copper bus bar torque
Abstract: E62806
Text: Product Data Sheet 145X573 Replace “X” with 1, 2 or 3 for number of poles Power Stud Block 360 Amps, 600 Volts AC/DC Wire Range: Line side: (1) 3/8 - 16 X 1 7/16 stud Load Side: (2) 3/8 - 16 X 1 7/16 stud Electrical Ratings: • 360A copper wire • 600 Volts AC/DC (UL 1059 Class C, User Group - General Industrial)
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Original
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145X573
Ins059
E62806
LR19766
CC145X
copper bus bar torque
E62806
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PDF
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C300/M
Abstract: No abstract text available
Text: Three Phase Power Calibrator and Power Engineering Devices Tester C300 3- phase source up to 120A 1- phase up to 360A and 560V Calibrator / tester C300 is used for adjusting, checking and verification of measuring instruments used in power engineering. These include electricity
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UCF100
CF100
CF101
RS232-Bluetooth
30V/50Hz
Calpro300TS
C300/M
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PDF
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Gate Turn-off Thyristor
Abstract: gate turn-off SGB00R24 jdrm SG800 thyristor toshiba 1351B
Text: SG800 R,U,W 24 TOSHIBA GATE TURN-OFF THYRISTOR SG800 <R ,U, W) 24 (SGB00R24) U nit in mm 2-fl3.6±0.2 CHOPPER, INVERTER APPLICATION Repetitive Peak OfT-State Voltage : V d rm = 1300, 1600, 1800V R.M.S On-State Current : I t (R M S ) = 360A Peak Turn-OfF Current
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SG800
SGB00R24)
SG800R24
SG800U24
SG800W24
SG800
Gate Turn-off Thyristor
gate turn-off
SGB00R24
jdrm
thyristor toshiba
1351B
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PDF
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Untitled
Abstract: No abstract text available
Text: i / 3 y h * - JVJT S H 'Î-K —K ïS'n.—JU Diode Module Schottky Barrier Diode OUTLINE DIMENSIONS D360SC6M 60V 360A l> US V f ► s jc ô '/ jv ^ u > *§ k S R S Ü »DC/DC H C x T .^ Ü f ê É I l f i : « * r s t f i < f i ÿ v>) RATINGS a Item s Absolute Maximum Ratings
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OCR Scan
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D360SC6M
100ns,
J515-5
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PDF
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Untitled
Abstract: No abstract text available
Text: y3y h * A ' U K K iv a - J I/ Schottky Barrier Diode Diode Module OUTLINE DIMENSIONS D360SC7M Case : Modules 70V 360A • ^ s a ty a - jL / • ffiVF • e jc w s u •* S R S S •D C /D C • I C x T . Î '- RATINGS • Îë ftlI^ Ü Ë fë m A bso lu te M axim um Ratings
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D360SC7M
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PDF
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SHINDENGEN DIODE
Abstract: No abstract text available
Text: '> 3 7 K S ch ottk y Barrier Diode_ Diode Module o u t l in e d i m e n s io n s D360SC4M Case : Modules 40V 360A ip D @ • fiV r ffi a* #DC/DC o y i{ —S> • I C x T . i’- • lÊ ÎÎÂ ^ J È f ë m Absolute Maximum Ratings h ie ^ Item K ffiU M
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D360SC4M
SHINDENGEN DIODE
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PDF
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SHINDENGEN DIODE
Abstract: TC-2R
Text: y 3y h VT ^— K K Schottky Barrier Diode ï v j - A Diode Module OUTLINE DIMENSIONS D360SC7M Case : Modules 70V 360A a - J U • fiV i • * ffiS R S ÎS •D C /D cn vA -ÿ • I C x X ? - • Æ tè H RATINGS Absolute Maximum Ratings m f? Item m im Storage Temperature
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OCR Scan
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D360SC7M
v-17k«
P360SC7M
SHINDENGEN DIODE
TC-2R
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PDF
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Diode Module Wtm D360SC6M OUTLINE 60V 360A Feature V 3. —I \j • • f iV • High lo Rating-M odule-PKG • Low V f f • Sm all B jc Main Use • High Po w er S w itching Regulator • D C / D C Z \ y jï- S • S ’ • IC x X i?
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D360SC6M
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PDF
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SHINDENGEN DIODE
Abstract: No abstract text available
Text: y 3 y h ^ n 'U T ^ V ^ - K $ -i ¿ s — K i v Schottky Barrier Diode_ j.- J I' Diode Module D360SC3M l f j ^ t Ä 0 _ OUTLINE DIMENSIONS Case : Modules 30V 360A •fflcVt • e jc / jv j^ in •*3Ü SR « g •D C /D C 3 y K - 9 m x s k ^ y t h - 'jp
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D360SC3M
SHINDENGEN DIODE
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PDF
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Untitled
Abstract: No abstract text available
Text: î / a y h * - A'UT7S H 'Î-K —KïS'n.—Jb Diode Module Schottky Barrier Diode OUTLINE DIMENSIONS D360SC4M 40V 360A l> US V f ► sjcô '/jv^u > *§ kS R S Ü »DC/DC H C x T .^ ÜfêÉIlfi:«* r s tfi< f i ÿ v>) RATINGS Absolute Maximum Ratings a Item
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OCR Scan
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D360SC4M
100ns,
J515-5
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PDF
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D360SC6M
Abstract: L017
Text: Schottky Barrier Diode Diode Module •¿m u OUTLINE Package I Module D360SC6M Unit : mm W eight 66R T yp> Isi Ö 51 3-M4 nui thickness = 3.2 60V 360A p, Feature •« V • High lo Rating-Module-PKG • Low V f • Small 9 je f • 8 jcÖ ^/JV c^L' 0 1 °
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D360SC6M
CJ533-1
D360SC6M
L017
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PDF
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Untitled
Abstract: No abstract text available
Text: MITEL DF252 Fast Recovery Diode SEMICONDUCTOR Supersedes January 1996 version, DS4142 - 3.3 DS4142 - 3.4 KEY PARAMETERS V RRM 1600V 360A Jf AV 3000A FSM 35|iC Q, 3.2|is APPLICATIONS • Induction Heating. ■ A.C. Motor Drives. ■ March 1998 Inverters And Choppers.
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DF252
DS4142
DF252
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PDF
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