35N120A Search Results

35n120au1

Abstract: IXSX35N120AU1 IGBT 500V 35A 35N120AU
Contextual Info: High Voltage IGBT with Diode IXSX 35N120AU1 VCES = 1200 V IC25 = 70 A VCE SAT = 4V Combi Pack Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous

IGBT 500V 35A

Abstract: 35n120a
Contextual Info: High Voltage, High speed IGBT IXSH 35N120A VCES IC25 VCE sat Maximum Ratings TO-247 AD = 1200 V = 70 A = 4V Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20

IXSN35N120

Contextual Info: DIXYS High Voltage GBT with Diode IXSN 35N120AU1 VCES C25 V Symbol Test Conditions V CES T, = 25°C to 150°C 1200 V V CGR Tj = 25°C to 150°C; RGE = 1 M fl 1200 A V GES Continuous +20 V V ¥ gem Transient ±30 V ^C25 Tc = 25°C 70 A 'c a o T c = 90°C Maximum Ratings

IXLK35N120AU1

Contextual Info: IGBT with Diode IXLK 35N120AU1 VCES I C25 VCE sat = 1200 V = 58 A = 3.6 V High Short Circuit SOA Capability Preliminary data Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1200 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V V GES Continuous

IXLN35N120AU1

Contextual Info: IGBT with Diode IXLN 35N120AU1 VCES I C25 VCE sat = 1200 V = 40 A = 3.5 V High Short Circuit SOA Capability Preliminary data E Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1200 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V V GES Continuous

Contextual Info: High Voltage IGBT with Diode IXSX 35N120AU1 VCES = 1200 V IC25 = 70 A VCE SAT = 4V Combi Pack Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous

Contextual Info: High Voltage IGBT with Diode IXSX 35N120AU1 VCES = 1200 V IC25 = 70 A VCE SAT = 4V Combi Pack Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous

Contextual Info: OIXYS IGBT with Diode IXLK 35N120AU1 VCES = 1200 V = 58 A = 3.6 V C25 v CE sat High Short Circuit SOA Capability P re lim in a ry d a ta Symbol Test Conditions v CES v¥ T j = 25°C to 150°C 1200 V T j = 25°C to 150°C; RGE = 1 M il 1200 V cgr Maximum Ratings

Contextual Info: DIXYS IXSK 35N120AU1 High Voltage IGBT with Diode VCES I C25 vCE sat 1200 V 70 A 4V Short Circuit SOA Capability Prelim inary data Symbol Test C onditions V CES ^ V cO R Tj = 25° C to 150° C; Rge = 1 MC2 VGES v GEM Continuous +20 V Transient ±30 V ^C25

IXSN35N120AU1

Contextual Info: High Voltage IGBT with Diode IXSN 35N120AU1 VC E S = 1200 V = 70 A = 4V C 25 V C E sat S C S O A Capability Symbol Test Conditions Maximum Ratings V 'CES T j = 25°C to 150°C vCGR T, = 25°C to 150°C; RGE = 1 MiJ 1200 A VOES vQE„ C ontinuous ±20 V Transient

35n120au1

Abstract: C8750 35N120 35N120AU
Contextual Info: DIXYS High Voltage IGBT with Diode IXSN 35N120AU1 V CES I 1200 V 70 A 4V C25 VCE sat Short Circuit SOA Capability Symbol Test Conditions V CES Tj =25°Cto 150°C 1200 V VCGn Tj = 25°Cto150°C ;R GE= 1 MQ 1200 A vGES v GEM Continuous 420 V Transient £30

35n120

Contextual Info: □IXYS High Voltage, High speed IGBT IXSH 35N120A VCES C25 v CE sat = 1200 V = 70 A = 4V Short Circuit SOA Capability Symbol Test Conditions v CES T j = 25° C to 150° C 1200 V VCQR T j = 25°C to 150°C; RGE= 1 MQ 1200 V vQES vGEM Continuous ±20 V T ransient

35N120AU1

Abstract: IG17
Contextual Info: n ix Y S High Voltage IGBT with Diode VCES 'cas IXSX 35N120AU1 V CE SAT, = 1200 V = 70 A = *V PLUS 247 package Prelim inary data Symbol Test Conditions v' ces v CGR ^ Maximum Ratings = 25° C to 150° C V 1200 V v GES v*GEM Continuous ±20 V Transient ±30

RM18T

Abstract: IXLK35N120AU1
Contextual Info: DIXYS IGBT with Diode IXLK 35N120AU1 VCES = 1200 V = 58 A = 3.6 V IC25 VCE sat High Short Circuit SOA Capability Symbol Test C onditions v CES Tj = 25°C to 150°C 1200 V V CGR T.J = 25°C to 150°C; RrP = 1 M£2 tit 1200 V V GES Continuous +20 V V GEM Transient

IXLN35N120A

Abstract: td 25 n 1200
Contextual Info: IGBT IXLN 35N120A VCES IC25 VCE sat = 1200 V = 40 A = 3.5 V High Short Circuit SOA Capability E Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V

IXLN35N120AU1

Abstract: DIXYS 35N120AU1
Contextual Info: DIXYS IGBT with Diode IXLN 35N120AU1 V CES ^C25 v v CE sat = 1200 V = 40 A = 3.5 V High Short Circuit SOA Capability Prelim inary data Symbol Test C onditions Maximum Ratings v CES Tj = 25°C to 150°C 1200 V VCGR Tj = 25°C to 150°C; RGE = 1 1200 V VGES

IXLN35N120A

Abstract: 1503VC
Contextual Info: DIXYS IXLN 35N120A IGBT V CES IC25 v CE sat = 1200 V = 40 A = 3.5 V High Short Circuit SOA Capability P re lim in a ry d a ta Maximum Ratings Symbol Test Conditions v CES I, V CGR T j = 25°C to 150°C; RGE = 1 M i 1 v" g e s 1200 V 1200 V Continuous +20

IXSN35N120AU1

Abstract: IXSN35N120AU IXSN35N120 35n120au1
Contextual Info: High Voltage IGBT with Diode IXSN 35N120AU1 VCES = 1200 V = 70 A = 4V IC25 VCE sat 3 2 4 1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 A miniBLOC, SOT-227 B 1 2 VGES Continuous ±20 V

MD 5034

Abstract: 35n120 IXLN35N120AU1 35N120AU1 DDD373D IXYS IGBT 0504N
Contextual Info: □IXYS IGBT with Diode IXLN 35N120AU1 v v ¥ ces ^C 25 C E sa t = 1200 V = 40 A = 3.5 V High Short Circuit SOA Capability P re lim in a ry d a ta Symbol Test Conditions v CES ^ = 25°C to 150°C 1200 V VCGR ^ = 25°C to 150°C; RGE = 1 Mi2 1200 V v GES

35N120AU3

Abstract: ixys igbt
Contextual Info: □IXYS Advanced Data IXSN 35N120AU2 IXSN 35N120AU3 IGBT with Diode CES ^C25 vw CE sat = 1200 V = 50 A = 3.6 V Buck & Boost Configuration Short Circuit SOA Capability Symbol Test Conditions v CES T j =25° Cto 150° C 1200 V vCGR Tj = 2 5 °C to 1 5 0 °C ;R GE= 1 MO

Contextual Info: I IXLN 35N120A IGBT V CES IC25 V CE sat = 1200 V = 40 A = 3.5 V High Short Circuit SOA Capability Prelim inary data Maximum Ratings Symbol Test Conditions v CES Tj = 25°C to 150°C 1200 V V CGR T,J = 25°C to 150°C;' F U = 1 MC2 (a t 1200 V v GES Continuous

35N120A

Abstract: IXSH35N120A
Contextual Info: High Voltage, High speed IGBT IXSH 35N120A VCES IC25 VCE sat = 1200 V = 70 A = 4V Short Circuit SOA Capability Preliminary data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1200 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous

IXSH 35N120AU1

Abstract: 35N120AU1
Contextual Info: High Voltage IGBT with Diode IXSN 35N120AU1 VCES IC25 VCE sat = 1200 V = 70 A = 4V 3 2 Preliminary data 4 1 Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1200 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 1200 A VGES Continuous ±20 V VGEM

Contextual Info: High Voltage, High speed IGBT IXSH 35N120A VCES IC25 VCE sat Maximum Ratings TO-247 AD = 1200 V = 70 A = 4V Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20