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    35A, 600V Search Results

    35A, 600V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
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    35A, 600V Price and Stock

    Xcelite by Weller 600V

    Xcelite 4-Way Pocket Tool, Combination Nutdriver And ScrewDriver, Carded
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 600V 12
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    • 100 $12.29
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    Xcelite by Weller 600VN

    Weller, 4-Way Pocket Tool, Combination Nutdriver and Screwdriver | Apex Tool Group Mfr. 600VN
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    Onlinecomponents.com 600VN 12
    • 1 $23.3
    • 10 $22.83
    • 100 $22.14
    • 1000 $22.14
    • 10000 $22.14
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    Microchip Technology Inc APT60D60LCTG

    Diode Switching 600V 60A 3-Pin(3+Tab) TO-264 Tube
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    Onlinecomponents.com APT60D60LCTG
    • 1 -
    • 10 $8.82
    • 100 $7.58
    • 1000 $7.08
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    Microchip Technology Inc APT60D60SG

    Rectifier Diode Switching 600V 60A 130ns 2-Pin(2+Tab) TO-247 Tube
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    Onlinecomponents.com APT60D60SG
    • 1 -
    • 10 $4.31
    • 100 $3.8
    • 1000 $3.51
    • 10000 $3.41
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    Microchip Technology Inc APT6021BFLLG

    Trans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-247 Tube
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com APT6021BFLLG
    • 1 $17.87
    • 10 $16.42
    • 100 $15
    • 1000 $14.55
    • 10000 $14.55
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    Find more 35A, 600V price and stock on Findchips.com

    35A, 600V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MCT thyristor

    Abstract: mct 600v MCT harris MOS Controlled Thyristor MCTV35P60F1D MCTV35P6
    Text: MCTV35P60F1D Semiconductor April 1999 AWN NS 35A, 600V ITHDR DESIG PART W E - NO NEW Thyristor MCT OLET S OBS S PROCE Features P-Type MOS Controlled with Anti-Parallel Diode Package • 35A, -600V JEDEC STYLE TO-247 • VTM = -1.35V (Max) at I = 35A and +150oC


    Original     		PDF MCTV35P60F1D -600V O-247 150oC factor/100) MCT thyristor mct 600v MCT harris MOS Controlled Thyristor MCTV35P60F1D MCTV35P6

    MOS Controlled Thyristor

    Abstract: MCT thyristor "MOS Controlled Thyristors" 100DV MCTG35P60F1 MCTG35P6
    Text: MCTG35P60F1 Semiconductor April 1999 WN IGNS ITHDRA W T R W DES A E P N O N EP-Type SOLET ESS OB PROC Features 35A, 600V MOS Controlled Thyristor MCT Package • 35A, -600V JEDEC STYLE TO-247 o • VTM = -1.3V(Maximum) at I = 35A and +150 C A • 800A Surge Current Capability


    Original     		PDF MCTG35P60F1 -600V O-247 150oC MOS Controlled Thyristor MCT thyristor "MOS Controlled Thyristors" 100DV MCTG35P60F1 MCTG35P6

    MOS Controlled Thyristor

    Abstract: MCT thyristor "MOS Controlled Thyristors" mos Turn-off Thyristor MCTG35P60F1 MCTS "mos controlled thyristor"
    Text: MCTG35P60F1 S E M I C O N D U C T O R 35A, 600V P-Type MOS Controlled Thyristor MCT April 1995 Features Package • 35A, -600V JEDEC STYLE TO-247 o • VTM = -1.3V(Maximum) at I = 35A and +150 C A • 800A Surge Current Capability K • 800A/µs di/dt Capability


    Original     		PDF MCTG35P60F1 -600V O-247 150oC MOS Controlled Thyristor MCT thyristor "MOS Controlled Thyristors" mos Turn-off Thyristor MCTG35P60F1 MCTS "mos controlled thyristor"

    MCT thyristor

    Abstract: MOS Controlled Thyristor MCT harris mct 600v MCTV35P60F1D diode ik 60
    Text: MCTV35P60F1D S E M I C O N D U C T O R 35A, 600V P-Type MOS Controlled Thyristor MCT with Anti-Parallel Diode March 1995 Features Package • 35A, -600V JEDEC STYLE TO-247 • VTM = -1.35V (Max) at I = 35A and +150oC • 800A Surge Current Capability A • 800A/µs di/dt Capability


    Original     		PDF MCTV35P60F1D -600V O-247 150oC factor/100) MCT thyristor MOS Controlled Thyristor MCT harris mct 600v MCTV35P60F1D diode ik 60

    MCT thyristor

    Abstract: MCT harris 3A65P100F2 IK25 THYRISTOR 35A 300V diode ik 60
    Text: MCTV35P60F1D S E M I C O N D U C T O R April 1998 S DESIGN R NEW O F 2 F D E 35A, 600V ND P10 COMME CT3D65 NOT RE 3A65P100F2, M Thyristor MCT T See MC Features P-Type MOS Controlled with Anti-Parallel Diode Package • 35A, -600V JEDEC STYLE TO-247 • VTM = -1.35V (Max) at I = 35A and +150oC


    Original     		PDF MCTV35P60F1D O-247 CT3D65 3A65P100F2, -600V 150oC factor/100) MCT thyristor MCT harris 3A65P100F2 IK25 THYRISTOR 35A 300V diode ik 60

    MOSFET 1000v 30a

    Abstract: W210PIV400 mosfet 600V 100A MOSFET 1200v 30a MOSFET welding INVERTER welding inverter 100A UC3842 mosfet 600V 30A 1200v 30A to247 W210PIV STGW50N60
    Text: WELDING STMicroelectronics SOLUTIONS Mains Pre- Rectification Regulation Primary Secondary Inverter RECOMMENDED DEVICES MAIN FEATURES Mains BF3506TV / BF3510TV BHA/K3012TV MSSxx / MDSxx BTW68-xxx / BTW69-xxx Input Rect. Bridge - 600V/35A; 1000V/35A Input Rect. Bridge - 1200V/30A 3-ph.


    Original     		PDF BF3506TV BF3510TV BHA/K3012TV BTW68-xxx BTW69-xxx 00V/35A; 000V/35A 200V/30A L4981A/B STP/U/W/Y/ExxNB50/60 MOSFET 1000v 30a W210PIV400 mosfet 600V 100A MOSFET 1200v 30a MOSFET welding INVERTER welding inverter 100A UC3842 mosfet 600V 30A 1200v 30A to247 W210PIV STGW50N60

    MOS Controlled Thyristor

    Abstract: mct 575 "MOS Controlled Thyristors" "mos controlled thyristor" MCT thyristor Thyristors application circuits
    Text: MCTG35P60F1 S E M I C O N D U C T O R April 1998 NS DESIG W E N 2 R P100F ED FO MEND 2, MCT3D65 M O C E P-Type NOT R T3A65P100F C M e e S Features 35A, 600V MOS Controlled Thyristor MCT Package • 35A, -600V JEDEC STYLE TO-247 o • VTM = -1.3V(Maximum) at I = 35A and +150 C


    Original     		PDF P100F MCT3D65 T3A65P100F MCTG35P60F1 O-247 -600V 150oC MOS Controlled Thyristor mct 575 "MOS Controlled Thyristors" "mos controlled thyristor" MCT thyristor Thyristors application circuits

    BSM20GP60

    Abstract: BSM35GP120 BSM25GP120 BSM50GP120 BSM15GP120 IGBT 600v 20a 600v 20a IGBT 600v 20a IGBT driver BSM30GP60 FP50R12KS4C
    Text: power the Home Products PIM News Contact Editorials Job Offers Company Search Site Content IGBT Modules . . . . . . . . . . . 10A 15A 20A 25A 30A 35A 35A 50A 50A 75A 100A IGBT Driver 600V Low Loss 1200V Low Loss BSM10GP60 BSM15GP60 BSM20GP60 BSM10GP120 BSM15GP120


    Original     		PDF BSM10GP60 BSM15GP60 BSM20GP60 BSM10GP120 BSM15GP120 BSM30GP60 BSM50GP60 BSM50GP60G BSM75GP60 BSM100GP60 BSM20GP60 BSM35GP120 BSM25GP120 BSM50GP120 BSM15GP120 IGBT 600v 20a 600v 20a IGBT 600v 20a IGBT driver BSM30GP60 FP50R12KS4C

    SCHEMATIC dimmer igbt

    Abstract: SCHEMATIC igbt dimmer igbt dimmer STGW35NB60SD GW35NB60SD JESD97 igbt dimmer applications circuit diagram IGBT light DIMMER
    Text: STGW35NB60SD N-CHANNEL 35A - 600V - TO-247 Low Drop PowerMESH IGBT General features Type VCES VCE sat (Max)@ 25°C IC @100°C STGW35NB60SD 600V < 1.7V 35A • LOW ON-VOLTAGE DROP (VCEsat) ■ LOW INPUT CAPACITANCE ■ HIGH CURRENT CAPABILITY 3 2 1 TO-247


    Original     		PDF STGW35NB60SD O-247 GW35NB60SD SCHEMATIC dimmer igbt SCHEMATIC igbt dimmer igbt dimmer STGW35NB60SD GW35NB60SD JESD97 igbt dimmer applications circuit diagram IGBT light DIMMER

    Untitled

    Abstract: No abstract text available
    Text: R6035ENZ Nch 600V 35A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.102W ID 35A PD 120W TO-3PF (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.


    Original     		PDF R6035ENZ R1102A

    Untitled

    Abstract: No abstract text available
    Text: 48Vdc Input, 2.5Vdc@35A Output Eighth-brick Converter AVO100-48S2V5 Description The AVO100-48S2V5 DC-DC converter is a next-generation industry standard eighth-brick with optimized ultra-high efficiency. This module can provide up to 35A output current at


    Original     		PDF 48Vdc AVO100-48S2V5 AVO100-48S2V5 SJ/T11363-2006

    Untitled

    Abstract: No abstract text available
    Text: 48Vdc Input, 2.5Vdc@35A Output Eighth-brick Converter AVO100-48S2V5B Description The AVO100-48S2V5B DC-DC converter is a next-generation industry standard eighth-brick with optimized ultra-high efficiency. This module can provide up to 35A output current at


    Original     		PDF 48Vdc AVO100-48S2V5B AVO100-48S2V5B SJ/T11363-2006

    Untitled

    Abstract: No abstract text available
    Text: R6035ENZ1 Nch 600V 35A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.102W ID 35A PD 120W TO-247 (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.


    Original     		PDF R6035ENZ1 O-247 R1102A

    IR 30DF

    Abstract: FF1004 RGP10 DO-201AD BA150 BY290 30df FF1506 FF1504 BY398GP
    Text: QUICK GUIDE Fast Recovery Rectifiers FAST RECOVERY RECTIFIERS (AXIAL DEVICES) IF IFSM 50V 100V 200V RGP08 1A 30A RGP08A RGP08B RGP08D FF1001 FF1002 FF1003 SERIES FF1000 1A 35A BA150GP 1A 35A 1N4930GP 1A 30A 1N4933GP RGP10A 1N4934GP 300V 400V 500V RGP08G


    Original     		PDF RGP08 RGP08A RGP08B RGP08D FF1001 FF1002 FF1003 FF1000 BA150GP RGP08J* IR 30DF FF1004 RGP10 DO-201AD BA150 BY290 30df FF1506 FF1504 BY398GP

    STGW35NB60S

    Abstract: JESD97 GW35NB60S
    Text: STGW35NB60S N-channel 35A - 600V - TO-247 Low drop PowerMESH IGBT Features Type VCES STGW35NB60S 600V IC VCE sat (Max)@ 25°C @100°C < 1.7V • Low on-voltage drop (VCEsat) ■ Low input capacitance ■ High current capability 35A TO-247 Description Using the latest high voltage technology based on


    Original     		PDF STGW35NB60S O-247 GW35NB60S STGW35NB60S JESD97 GW35NB60S

    Untitled

    Abstract: No abstract text available
    Text: R6035ENZ Nch 600V 35A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 0.102W ID 35A PD 120W TO-3PF (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 20V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.


    Original     		PDF R6035ENZ R1102A

    Untitled

    Abstract: No abstract text available
    Text: R6035ENZ1 Nch 600V 35A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 0.102W ID 35A PD 120W TO-247 (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 20V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.


    Original     		PDF R6035ENZ1 O-247 R1102A

    FB25L

    Abstract: FB5004 FB3502 Bridge Rectifier, 35A, 600V FB3504 FB5002 FB35L FB1006 FB2506L diode 300v 200A
    Text: QUICK GUIDE Bridge Rectifiers BRIDGE RECTIFIERS (POWER BRIDGES) SERIES FB10 FB10L FB15 FB15L FB25 FB25L FB35 FB35L FB50 IF IFSM 50V 100V 200V 10A 10A 15A 15A 25A 25A 35A 35A 50A 200A 200A 300A 300A 300A 300A 400A 400A 500A FB1000 FB1000L FB1500 FB1500L FB2500


    Original     		PDF FB10L FB15L FB25L FB35L FB1000 FB1000L FB1500 FB1500L FB2500 FB2500L FB25L FB5004 FB3502 Bridge Rectifier, 35A, 600V FB3504 FB5002 FB35L FB1006 FB2506L diode 300v 200A

    Untitled

    Abstract: No abstract text available
    Text: CTG35P60F1 35A, 600V -Type MOS Controlled Thyristor MCT Features • 35A,-600V • VTM = -1.3V(Maximum) at I = 35A and +150°C • 800A Surge Current Capability • 800A/|.is di/dt Capability • MOS Insulated Gate Control • 50A Gate Turn-Off Capability at +150°C


    OCR Scan     		PDF CTG35P60F1 -600V

    THYRISTOR 35A 300V

    Abstract: MCT thyristor 100v
    Text: &m MCTG35P60F1 a r ia s 35A, 600V P-Type MOS Controlled Thyristor MCT A p rii 1995 Package Features J E D E C S T Y LE TO -247 • 35A, -600V • VTM = -1.3V(Maximum) at I = 35A and +150°C • BOOA Surge Current Capability • SOOA/jjs dl/dt Capability


    OCR Scan     		PDF MCTG35P60F1 -600V THYRISTOR 35A 300V MCT thyristor 100v

    Untitled

    Abstract: No abstract text available
    Text: MCTV35P60F1D CE M A R R 35A, 600V P-Type MOS Controlled Thyristor MCT with Anti-Parallel Diode M arch 1995 Package Features • 35A .-600V J E D E C S T Y L E T O -2 4 7 • VTM = -1 .35V (Max) at I = 35A and +150°C • 800A Surge Current Capability


    OCR Scan     		PDF MCTV35P60F1D -600V 800/Vns

    Untitled

    Abstract: No abstract text available
    Text: DESIGN IMTSi METRIC nn “ VHSF [INCHES] ^ 1 i first din r REVISION pen rrim i REV. DESCRPTIDN DATE BY. ECN ND. n _ F C€ |[s5bnB3mnmrl DP35 IEC 60947-7-1 630V 4mm1 600V 35A 22-10AWG £ c C Made in China NOTES: 1. Rating: UL 600V 35A IEC 630V 32A 2. Insulation Withstand Voltage:


    OCR Scan     		PDF 22-10AWG UL94-V0 500Mn DC1000V DP35-GY/DP35-BU/DP35-LK OE/1201 OJ/1208 QN/1204

    Untitled

    Abstract: No abstract text available
    Text: H ^ r tm ^ s • « / < S e m ico n d ucto r mm M m m T 3 5 P 6 F 1 D \ 35A, 600V P-Type MOS Controlled hyristor MCT with Anti-Parallel Diode W tH O B ^ o E S IG N S - ApriM99n V r r : ^ S S OBSOLi ! i - - — 1 Package Featuw§ • 35A ,-6 00V JEDEC STYLE TO-247


    OCR Scan     		PDF ApriM99n O-247 factor/100)

    vqe 13

    Abstract: APT35G60BN APT35G50BN APT35G60
    Text: D • 0 5 5 ? ^ OOOObSl MêT aa d v a n c e d W æ PO W ER 'T C .V M rÆ Ê Ê T e c h n o l o g y APT35G60BN APT35G50BN PO W ER 3^0 « A V P 600V 500V 35A 35A M O S IV IG B T N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR


    OCR Scan     		PDF APT35G60BN APT35G50BN O-247AD vqe 13 APT35G60