3583 TRANSISTOR Search Results

power supply in ic 7915 circuit diagram

Abstract: 0804HS OC205 pin configuration 7915 metal package 7915 7BAS
Contextual Info: BURR-BROtüN CÔRP HE D |l7 3 1 3 b S DD13ÔÔ1 1 3583 B U R R - B R O W N j 3 E 3 | El 3583 | E I FEA T U R ES APPLICATIO N S • HIGH OUTPUT SW INGS. Up to ;I 4 0 V • PROGRAMMABLE POWER S U P P LY OUTPUT AM PLIFIER • LARGE LOAD CURREN TS. -75m A • PROTECTED OUTPUT STAGE. Automatic Therm al Shutofl

Contextual Info: WSÈ 3583 FEATURES APPLICATIONS • HIGH OUTPUT SWINGS. Up to -140V • PROGRAMMABLE POWER SUPPLY OUTPUT AMPLIFIER • LARGE LOAD CURRENTS. -75mA • PROTECTED OUTPUT STAGE. Automatic Thermal Shutoff OPERATIONAL AMPLIFIERS High Voltage - High Current O P E R A T IO N A L A M P LIF IE R

CS 213 Polymer protection

Contextual Info: 19-3583; Rev 0; 2/05 0.6V to 5.5V Output, Parallelable, Average-Current-Mode DC-DC Controllers The MAX5060/MAX5061 pulse-width modulation PWM DC-DC controllers provide high-output-current capability in a compact package with a minimum number of external components. These devices utilize an average-current-mode control that enables optimal use of low

TQFN28

Contextual Info: 19-3583; Rev 1; 6/05 0.6V to 5.5V Output, Parallelable, Average-Current-Mode DC-DC Controllers The MAX5060/MAX5061 pulse-width modulation PWM DC-DC controllers provide high-output-current capability in a compact package with a minimum number of external components. These devices utilize an average-current-mode control that enables optimal use of low

FZ 75 capacitor 1500 6.3V

Abstract: FZ 87 1500 6.3V MAX5060ATI MAX5060ETI MAX5061 MAX5061AUE MAX5061EUE
Contextual Info: 19-3583; Rev 2; 7/05 0.6V to 5.5V Output, Parallelable, Average-Current-Mode DC-DC Controllers The MAX5060/MAX5061 pulse-width modulation PWM DC-DC controllers provide high-output-current capability in a compact package with a minimum number of external components. These devices utilize an average-current-mode control that enables optimal use of low

TQFN28

Contextual Info: 19-3583; Rev 2; 7/05 KIT ATION EVALU E L B A IL AVA 0.6V to 5.5V Output, Parallelable, Average-Current-Mode DC-DC Controllers The MAX5060/MAX5061 pulse-width modulation PWM DC-DC controllers provide high-output-current capability in a compact package with a minimum number of external components. These devices utilize an average-current-mode control that enables optimal use of low

MAX5060ATI

Abstract: MAX5060ETI MAX5061 MAX5061AUE MAX5061EUE
Contextual Info: 19-3583; Rev 2; 7/05 KIT ATION EVALU E L B A IL AVA 0.6V to 5.5V Output, Parallelable, Average-Current-Mode DC-DC Controllers The MAX5060/MAX5061 pulse-width modulation PWM DC-DC controllers provide high-output-current capability in a compact package with a minimum number of external components. These devices utilize an average-current-mode control that enables optimal use of low

2N3584

Abstract: 2n4240 2n 6021 SCHEMA 2N3583 3584 TCA 321 2n3585 3583
Contextual Info: 2N 3584 ,* 2 N 358b 5^2I\I 3585 ^ 2 N 4240 NPN SILICON TRANSISTORS, TRIPLE DIFFUSED MESA * TRANSISTORS NPN SILICIUM, MESA TRIPLE DIFFUSES ^Preferred device Dispositif recommandé - High voltage linear power am plifier Amplification linéaire de puissance forte tension

2n4240

Abstract: 2N3585 MOTOROLA
Contextual Info: M OTOROLA SC XSTRS/R F 15E D I GGäMMbS T | NPN 2N3583 thru 2N3585 2N4240 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N6420 thru 2N6422 1.0 AND 2.0 AMPERE COMPLEMENTARY MEDIUM POWER HIGH VOLTAGE POWER TRANSISTORS POWER TRANSISTORS COMPLEMENTARY SILICON 2 5 0 -5 0 0 V O L T S

2N3534

Abstract: 2N3583 2N3584 2N3533 2N3563 2N3503 2N3585 2n358s N3584 2N3584 NPN
Contextual Info: 2N3583 2N3584 2N3585 NPN SILICON HIGH VOLTAGE POWER TRANSISTORS 35 watts at 25°C 5A peak collector current OUTLINE DIMENSIONS mm TO-66 915 min. - — - — 1 90 max. 1 1 Î 12.65 max. 0.85 0.70 T — — 8 .64 max ABSOLUTE MAXIMUM RATINGS v cso Collector-base voltage {lE — 0)

LTLS

Abstract: 2n2891 2N 3055 BDX 78 2N5415 2N5416 BDY71 2n3738 2n3055 2n3053
Contextual Info: metal power transistors O transistors de puissance métalliques Type v CEO •c h21E P to t ! Ic THOMSON-CSF VCE sat cont NPN min PNP (V) (A) / Ib max m ax (Al (W) 11 (V) (A) (A) td + tr ts tf typ * ty p * max m ax m ax M> (us) ip*) s w itc llin g tran sisto rs

TG 2309

Abstract: 2N4240 TRANSISTOR BDX 538 2N35842N35852N4240 2N3585 TEXAS 2N3583 bdx 32 1N914 2N3583 2N3584
Contextual Info: T Y P E S 2N3583. 2N 3 5 8 4. 2N3585. 2N4240 N -P -N S I L I C O N P O W E R T R A N S IS TO R S HIGH-VOLTAGE POWER TRANSISTORS DESIGNED FOR INDUSTRIAL AND M ILITA R Y APPLICATIONS • Min V b R CEO of 300 V (2N3585, 2N4240) • Typ VcE(sat) of 0.25 V at Iß = 125 mA, lc = 1 A

BDX 241

Abstract: BD 35 transistor 3055 transistor TRANSISTOR BDX transistor 3055 transistor BUx 49 transistor BD 140 TRANSISTOR BDX 14 transistor 2N 3055 transistor bd 905
Contextual Info: TOP-3 general purpose transistor selector guide y guide de sélection transistors TO P-3 usage général THOMSON-CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide

2N3439 COMPLEMENTARY

Abstract: 2N3440 COMPLEMENTARY 40346 D44VH D45VH D45VH1 D45VH10 D45VH4 D45VH7 D45VM1
Contextual Info: THOnSON/ DISTRIBUTOR SÛE D m TD5t,ñ73 □0DS75B ^53 • TCSK Bipolar Power Transistors High-Speed Switching Continued •>FE T y p e No. v C E O (s u s > V C E X (SUS) V V D 45V H F A M IL Y ( p - n - p ) D45VH1 D45VH4 D45VH7 D45VH10 -3 0 -4 5 -6 0 -8 0

J585

Abstract: BUX38 transistor ESM 30 BU104 BU 103 A eb117 transistor BU 109 BUX20 bux65 ESM18
Contextual Info: TO 66 CB 72 TO 3 (CB19) C B 183 T O 220 (CB 117) Power transistors N PN « Triple diffused » Fast switching Transistors de puissance N PN « Tripie diffusés » Commutation rapide T ype Case Boîtier Ptot (W) #VC EX VcEO (V) *C (A) h21 E / 'C min max (A)

BDX32

Abstract: bdx 540 2N3440 BUY71 2N 3585 TRANSISTOR BDX 538 crt 1700
Contextual Info: BDX32 NPN SILICON POWER TRANSISTOR D E S IG N E D FOR H IG H V O L T A G E C .R .T . S C A N N IN G ► V C E X fating 1700 V • Current Rating — 4 Amps Continuous — 5 Amps Peak » Fast Switching — t f at 3.5 Amps 0.7 Microsecond Typical mechanical specification

TRANSISTOR BDX 538

Abstract: BDX31 BUY71 BDX 538 2N3440 transistor tip 31 tip 40 power transistor BDX32 bdx 32 TIP 50 transistor
Contextual Info: BDX31 NPN SILICON POWER TRANSISTOR • Designed for High Voltage C .R .T. Scanning • • V c e x Rating 2 2 0 0 V Current Rating — 4 Amps Continuous — 5 Amps Peak • Fast Switching — tf at 3.5 Amps 0.7 Microsecond Typical absolute maximum ratings a t 25 °C ambient temperature

tt 2194

Abstract: LTLS 2n3054 2N5415 2N2243 aa2n BUX54 2N2192 2N2195 2N5416
Contextual Info: metal power transistors O transistors de puissance métalliques Type v CEO •c h21E P to t ! Ic THOMSON-CSF VCE sat 11 / Ib td + tr NPN min PNP (V) (A) max m ax (Al (W) (V) (A) (A) tf ty p * max m ax m ax min M> (us) ip *) (M H z) s w itc llin g tran sisto rs

2N3583

Abstract: 2N4240 2N36 2N35
Contextual Info: 2N3583 2N3584* 2N3585* 2N4240 *also available as i? t/V E sr JAN, JANTX, JANTXV HIGH-VOLTAGE SILICON N-P-N TRANSISTORS For High-speed Switching and Linear-Amplifier Applications Features • 100-percent tested to assure freedom from second breakdown in both forwardand reverse-bias conditions when operated within specified limits

Motorola transistors MJE3055

Abstract: Motorola transistors MJE2955 IC TC 3588 MJE2955 power amplifier circuit MJE2955 mje3055 transistor MJE3055 1N5825 MJD2955 30 amp npn transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN M JD 2955 Com plem entary Power Transistors PNP M JD 3055 DPAK For Surface Mount Applications ‘ Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. • • • •

FX1115

Contextual Info: N AUER PHILIPS/DISCRETE 86D 0 1 7 7 8 otE » • D 3T T - ? Jl oomoib a 0 "7 BLX68 U.H.F./V.H.F. POWER TRANSISTOR N-P-N silicon transistor tor use in class-B and C operated mobile, industrial and military transmitters with a supply voltage of 13,8 V. t has a capstan envelope with a moulded cap. All leads are isolated from the stud.

TLP534

Abstract: TIP540 TIP531 TIP534 BDX32 BUY71 tip 1050 tip632 2N3440 TIP532
Contextual Info: TYPES TIP531 THRU TIP534 N-P-N SILICON POWER TRANSISTORS FOR POWER AMPLIFIER AND HtGH-SPEED-SWITCHING APPLICATIONS • 300 V and 400 V Min V BR CEO • 15-A Rated Continuous Collector Current 150 Watts at 100°C Case Temperature Min fT of 50 MHz at 10 V, 1 A

rca 2N4240

Abstract: 2n3565 equivalent transistor 2N3585 2N3565 2N4240 2N3583 equivalent RCA-2N3583 2N3584 2n3584 GE 2N3583-2N3585
Contextual Info: DI D E | 3 û ? 5 Qfll 0 0 1 7 1 5 A b 3875081 G E SOLID STATE H ig h -V o ltag e r o w e r transistore 01E 17158 _ D 2N3583-2N3585, 2N4240 T- 3 ? - K. File Number 138 High-Voltage Silicon N-P-N Transistors For H igh-Speed Switching and Linear-Am plifier Applications

BLX68

Abstract: FX1115 TRANSISTOR D 1785 philips choke ferrite Transistor d12 t transistor rf vhf L7550
Contextual Info: N AMER P H I L I P S / D I S C R E T E 86D _0 b ^ 01778 d • ^53131 001401b ~ r ^ y ^ r ô JL BLX68 U.H.F./V.H.F. POWER TRANSISTOR a suppISy voItage of* 1*3 8 ^ ^ ° la$S B ^ ° operated mobile' industrial and military transmitters with It has a capstan envelope with a moulded cap. All leads are Isolated from the stud.